A suggestion for creating an excitable/oscillatory field with solid-state material is proposed. In essence, the idea is to make a spatial array of "mesoscopic particles" with the characteristics of a first-order phase transition. A theoretical computation shows that an auto-wave, or excitable wave, is generated in such an excitable field. A simple example of using this system as a diode in information flow is given.

New circuit techniques were proposed to realize a high-density and high-performance content addressable memory (CAM). A dynamic register which functions as a status flag, and some logic circuits are organically combined and flexibly perform complex search operations, despite the compact layout area. Any kind of logic operations for the search results, that are AND, OR, INVERT, and the combinations of them, can be implemented in every word simultaneously. These circuits are implemented in an experimental 288 kbit dynamic CAM using 0.8 µm CMOS process technology. We consider these techniques to be indispensable for high-density and high-performance dynamic CAM.

This paper describes a bitline control circuit and redundancy technique for high-density dynamic content addressable memories (CAMs). The proposed bitline control circuit can efficiently manage a dynamic CAM cell accompanied by complex operations; that is, a refresh operation, a masked search operation, and partial writing, in addition to normal read/write/search operations. By adding a small supplementary circuit to the bitline control circuit, a circuit scheme with redundancy which prevents disabled column circuits from affecting a match operation can also be obtained. These circuit technologies achieve higher-density dynamic CAMs than conventional static CAMs. These technologies have been successfully applied to a 288-kbit CAM with a typical cycle time of 150 ns.

An improved array architecture to realize fast access, low power dissipation, and wide operating margin, for the 16 Mbit DRAM is proposed. A high speed access is obtained by the fully embedded sense drive scheme for the RAS access time (tRAC), and the special page mode with the hierarchical I/O data bus lines and multi-purpose-register (MPR) for the column address access time (tCAA). A low power dissipation and wide operating margin are obtained by the improved twisted-bit-line (TBL) architecture with double dummy canceling. The 16 Mb DRAM using these architectures has 38 ns tRAC, 14 ns tCAA and 75 mA power dissipation at the typical condition.