This paper propose a structure of standard cells where the P/N boundary ratio of each cell can be independently customized for near-threshold operation. Lowering the supply voltage is one of the most promising approaches for reducing the power consumption of VLSI circuit, however, this causes an increase of imbalance between rise and fall delays for cells having transistor stacks. Conventional cell library with fixed P/N boundary is not efficient to compensate this delay imbalance. Proposed structure achieves individual P/N boundary ratio optimization for each standard cell, therefore it cancels the imbalance between rise and fall delays at the expense of cell area. Proposed structure is verified using measured result of Ring Oscillator circuits and simulation result of benchmark circuits in 65nm CMOS. The experiments with ISCAS'85 benchmark circuits demonstrate that the standard cell library consisting of the proposed cells reduces the power consumption of the benchmark circuits by 16% on average without increasing the circuit area, compared to that of the same circuit synthesized with a library which is not optimized for the near-threshold operation.

We investigate a design strategy for subthreshold circuits focusing on energy-consumption minimization and yield maximization under process variations. The design strategy is based on the following findings related to the operation of low-power CMOS circuits: (1) The minimum operation voltage (VDDmin) of a circuit is dominated by flip-flops (FFs), and VDDmin of an FF can be improved by upsizing a few key transistors, (2) VDDmin of an FF is stochastically modeled by a log-normal distribution, (3) VDDmin of a large circuit can be efficiently estimated by using the above model, which eliminates extensive Monte Carlo simulations, and (4) improving VDDmin may substantially contribute to decreasing energy consumption. The effectiveness of the proposed design strategy has been verified through circuit simulations on various circuits, which clearly show the design tradeoff between voltage scaling and transistor sizing.

A delay-compensation circuit for low-power subthreshold digital circuits is proposed. Delay in digital circuits operating in the subthreshold region of MOSFETs changes exponentially with process and temperature variations. Threshold-voltage monitoring and supply-voltage scaling techniques are adopted to mitigate such variations. The variation in the delay can be significantly reduced by monitoring the threshold voltage of a MOSFET in each LSI chip and exploiting the voltage as the supply voltage for subthreshold digital circuits. The supply voltage generated by the threshold voltage monitoring circuit can be regarded as the minimum supply voltage to meet the delay constraint. Monte Carlo SPICE simulations demonstrated that a delay-time variation can be improved from having a log-normal to having a normal distribution. A prototype in a 0.35-µm standard CMOS process showed that the exponential delay variation with temperature of the ring-oscillator frequency in the range from 0.321 to 212 kHz can remain by using compensation in the range from 5.26 to 19.2 kHz.

This paper presents a 4-valued content-addressable memory (CAM) for fully parallel template-matching operations in real-time cellular logic image processing with fixed templates. A universal literal is essential to perform a multiple-valued template-matching operation. It is decomposed of a pair of a threshold operation in a CAM cell and a logic-value conversion shared by CAM cells in the same column of a CAM cellular array, which makes a CAM cell function simple. Since a threshold operation together with a 4-valued storage element can be designed by using a single floating-gate MOS transistor, a high-density 4-valued universal-literal CAM with a single-transistor cell can be implemented by using a multi-layer interconnection technology. It is demonstrated that the performance of the proposed CAM is much superior to that of conventional CAMs under the same function.

This paper first clarifies the logic construction of safety control for the operation of a power press and then describes fail-safe dual two-rail system signal processing and fail-safe multiple-valued logic operations as methods for achieving this control as a fail-safe system. It finally shows a circuit for generating fail-safe two-rail run button signals based on ternary logic for concrete operation of the power press and an operation control circuit for confirming brake performance for each cycle of slide operation by using the run button signals. The control circuit uses such multiple-valued logic operations that binary logic signals that do not erroneously go logic 1 are added to a multiple-valued logic signal and the multiple-valued logic signal is converted to a binary logic signal that does not erroneously go logic 1 by a threshold operation.

A fail-safe logic operation refers to such a processing operation that the output assumes the logical value zero when the operation circuit fails. The fail-safe multiple-valued logic operation is proposed as one method of logic operation. Section 2 defines the fail-asfe multiple-valued logic operation and presents an example of method for accomplishing the fail-safe multiple-valued logic operation. Section 3 describes the method of designing a fail-safe threshold operation device (window comparator) as basic device in the fail-safe multiple-valued logic operation in consideration of LSI implementation and shows an example of prototype fail-safe window comparator. This operation device has higher and lower thresholds. It oscillates and produces an operational output signal only when the input signal level falls between the higher and lower thresholds. Unless the fail-safe window comparator is supplied with input signals of higher voltage than the power supply voltage, it dose not form a feedbadk loop as required for it to oscillate. This characteristic prevents the device from erroneously producing an output signal when any failure occurs in the amplifiers comprising the oscillation circuit. The window comparator can be built as a fail-safe threshold operation device. The fail-safe characteristic is utilized in its LSI implementation. Section 4 verifies the fail-safe property of the prortotype fail-safe window comparator. It is shown that even when the LSI develops failures not evident from outsid (latent failures), it does not lose the operational function and maintains the fail-safe characteristic.