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Akira YAMAZAKI Fukashi MORISHITA Naoya WATANABE Teruhiko AMANO Masaru HARAGUCHI Hideyuki NODA Atsushi HACHISUKA Katsumi DOSAKA Kazutami ARIMOTO Setsuo WAKE Hideyuki OZAKI Tsutomu YOSHIHARA
The voltage margin of an embedded DRAM's sense operation has been shrinking with the scaling of process technology. A method to estimate this margin would be a key to optimizing the memory array configuration and the size of the sense transistor. In this paper, the voltage margin of the sense operation is theoretically analyzed. The accuracy of the proposed voltage margin model was confirmed on a 0.13-µm eDRAM test chip, and the results of calculation were generally in agreement with the measured results.
Naoya WATANABE Fukashi MORISHITA Yasuhiko TAITO Akira YAMAZAKI Tetsushi TANIZAKI Katsumi DOSAKA Yoshikazu MOROOKA Futoshi IGAUE Katsuya FURUE Yoshihiro NAGURA Tatsunori KOMOIKE Toshinori MORIHARA Atsushi HACHISUKA Kazutami ARIMOTO Hideyuki OZAKI
This paper describes an Embedded DRAM Hybrid Macro, which supports various memory specifications. The eDRAM module generator with Hybrid Macro provides more than 120,000 eDRAM configurations. This eDRAM includes a new architecture called Auto Signal Management (ASM) architecture, which automatically adjusts the timing of the control signals for various eDRAM configurations, and reduces the design Turn Around Time. An Enhanced-on-chip Tester performs the maximum 512b I/O pass/fail simultaneous judgments and the real time repair analysis. The eDRAM testing time is reduced to about 1/64 of the time required using the conventional technique. A test chip is fabricated using a 0.18 µm 4-metal embedded DRAM technology, which utilizes the triple-well, dual-Tox, and Co salicide process technologies. This chip achieves a wide voltage range operation of 1.2 V at 100 MHz to 1.8 V at 200 MHz.
Takeshi FUJINO Akira YAMAZAKI Yasuhiko TAITO Mitsuya KINOSHITA Fukashi MORISHITA Teruhiko AMANO Masaru HARAGUCHI Makoto HATAKENAKA Atsushi AMO Atsushi HACHISUKA Kazutami ARIMOTO Hideyuki OZAKI
A low power 16 Mb embedded DRAM (eDRAM) macro is fabricated using 0.15 µm logic -based embedded DRAM process technology. A 0.5 µm2 CUB (