This paper proposes a new architecture for multibit complex bandpass ΔΣAD modulators with built-in Switched-Capacitor (SC) circuits for application to Low-IF receivers such as used for Bluetooth and WLAN. In the realization of complex bandpass ΔΣAD modulators, we face the following problems: (i) SNR of AD converter is deteriorated by mismatches between internal analog I and Q paths. (ii) Layout design becomes complicated because of signal lines crossing by complex filter and feedback from DAC for I and Q paths in the complex modulator, and this increases required chip area. We propose a new structure for a complex bandpass ΔΣAD modulator which can be completely divided into two paths without layout crossing, and solves the problems mentioned above. The two parts of signal paths and circuits in the modulator are changed for I and Q while CLK is changed for High/Low by adding multiplexers. Symmetric circuits are used for I and Q paths at a certain timing, and they are switched by multiplexers to those used for Q and I paths at another timing. Therefore the influence from mismatches between I and Q paths is reduced by dynamic matching. As a result, the modulator is divided into two separate parts without crossing signal lines between I and Q paths and its layout design can be greatly simplified compared with conventional modulators. We have conducted MATLAB simulations to confirm the effectiveness of the proposed structure.

We have designed, fabricated and measured a second-order multibit switched-capacitor complex bandpass ΔΣAD modulator to evaluate our new algorithms and architecture. We propose a new structure of a complex bandpass filter in the forward path with I, Q dynamic matching, that is equivalent to the conventional one but can be divided into two separate parts. As a result, the ΔΣ modulator, which employs our proposed complex filter can also be divided into two separate parts, and there are no signal lines crossing between the upper and lower paths formed by complex filters and feedback DACs. Therefore, the layout design of the modulator can be simplified. The two sets of signal paths and circuits in the modulator are changed between I and Q while CLK is changed between high and low by adding multiplexers. Symmetric circuits are used for I and Q paths at a certain period of time, and they are switched by multiplexers to those used for Q and I paths at another period of time. In this manner, the effect of mismatches between I and Q paths is reduced. Two nine-level quantizers and four DACs are used in the modulator for low-power implementations and higher signal-to-noise-and-distortion (SNDR), but the nonlinearities of DACs are not noise-shaped and the SNDR of the ΔΣAD modulator degrades. We have also employed a new complex bandpass data-weighted averaging (DWA) algorithm to suppress nonlinearity effects of multibit DACs in complex form to achieve high accuracy; it can be realized by just adding simple digital circuitry. To evaluate these algorithms and architecture, we have implemented a modulator using 0.18 µm CMOS technology for operation at 2.8 V power supply; it achieves a measured peak SNDR of 64.5 dB at 20 MS/s with a signal bandwidth of 78 kHz while dissipating 28.4 mW and occupying a chip area of 1.82 mm2. These experimental results demonstrate the effectiveness of the above two algorithms, and the algorithms may be extended to other complex bandpass ΔΣAD modulators for application to low-IF receivers in wireless communication systems.

A 1-GHz input bandwidth analog-to-digital (A/D) converter for an ultra-wideband impulse radio (UWB-IR) receiver is developed. Both an under-sampling sample-and-hold (S/H) circuit and a dynamic current-reduction comparator are proposed for the A/D converter. An under-sampling S/H circuit, which digitizes an input signal at a higher frequency than the sampling frequency with low power consumption, is required because the UWB-IR system utilizes intermittent ultrashort impulses. The proposed S/H circuit executes sampling by separating a sampling capacitor from an operational amplifier and accumulating the offset voltage of the amplifier in the other capacitor. The proposed dynamic current reduction comparator reduces bias current dynamically corresponding to its input-voltage level. The A/D converter is implemented in a 0.18-µm CMOS process technology, which achieves an effective number of bits of 5.5, 5.4, and 4.9 for input signals with frequencies of 1, 513, and 1057 MHz, respectively, at 32 M samples/s. The converter consumes 0.89 mA and 0.42 mA in the analog and digital component, respectively, at a 1.8-V supply.

A low-power-consumption 6-bit pipelined analog-to-digital converter for use in a BluetoothTM RF transceiver has been developed. The RF transceiver chip was fabricated using a 0.35-µm BiCMOS process, and the A/D converter is based on CMOS technology for digital logic. To reduce the power consumption of the converter, we used a look-ahead pipeline architecture to reduce the required settling time of an amplifier in the critical path of the converter. We show that through this reduction, amplifier power consumption of 600 µA can be reduced to 250 µA to achieve a 13-MHz conversion rate. We have also developed a low-power two-capacitor switched-capacitor common-mode feedback circuit which enables an offset cancellation of an amplifier during the reset phase. Offset cancellation is used in each stage of the S/H amplifier to reduce the overall offset of the converter. It achieves an effective number of bits of 5.7 at a conversion rate of 13 Msps and 5.0 at 26 Msps. The residual offset of the converter is only 4 mV. It has a low total current consumption of 3.2 mA at 13 Msps and a supply voltage of 2.8 V.

We have proposed a new low-IF transceiver architecture to simultaneously achieve both a small chip area and good minimum input sensitivity. The distinctive point of the receiver architecture is that we replace the complicated high-order analog filter for channel selection with the combination of a simple low-order analog filter and a sharp digital band-pass filter. We also proposed a high-speed convergence AGC (automatic gain controller) and a demodulation block to realize the proposed digital architecture. For the transceiver, we further reduce the chip area by applying a new form of direct modulation for the VCO. Since conventional VCO direct modulation tends to suffer from variation of the modulation index with frequency, we have developed a new compensation technique that minimizes this variation, and designed the low-phase noise VCO with a new biasing method to achieve large PSRR (power-supply rejection ratio) for oscillation frequency. The test chip was fabricated in 0.35-µm BiCMOS. The chip size was 3 3 mm2; this very small area was realized by the advantages of the proposed transceiver architecture. The transceiver also achieved good minimum input sensitivity of -85 dBm and showed interference performance that satisfied the requirements of the Bluetooth standard.