We introduce the design and deployment of the latest version of the VNode infrastructure, VNode-i. We present new extended VNode-i functions that offer high performance and provide convenient deep programmability to network developers. We extend resource abstraction to the transport network and achieve highly precise slice measurement for resource elasticity. We achieve precise resource isolation for VNode-i. We achieve coexistence of high performance and programmability. We also enhance AGW functions. In addition, we extend network virtualization from the core network to edge networks and terminals. In evaluation experiments, we deploy the enhanced VNode-i on the JGN-X testbed and evaluate its performance. We successfully create international federation slices across VNode-i, GENI, and Fed4FIRE. We also present experimental results on video streaming on a federated slice across VNode-i and GENI. Testbed experiments confirm the practicality of the enhanced VNode-i.

We developed piezoresistors with an intrinsic compensation of the offset temperature characteristics. High energy ion implantation was applied to fabricate this type of piezoresistor. The dopant profile of the buried piezoresistor resembles to that of the junction gate field effect transistor (JFET). The buried layer corresponds to a channel of JFET, and the substrate bias corresponds to the gate voltage. Owing to the independent temperature varying parameters, i.e., width of the depletion layer and carrier mobility in the channel, the drain current of the JFET has a temperature independent point at an appropriate gate source voltage. The effect was used in the new type of buried piezoresistor which has a driving point of zero temperature coefficient of resistance at an appropriate gate source voltage.

A 0.15 µm T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with an excellent RF performance has been developed using selective wet gate recess etching. The gate recess is formed by a pH-adjusted citric acid/NH4OH/H2O2 mixture with an etching selectivity of more than 30 for InGaAs over AlInAs. The standard deviation of saturation drain current (Idss) is as small as 3.2 mA for an average Idss of 47 mA on a 3 inch diameter InP wafer. The etching time for recess formation is optimized and an ft of 130 GHz and an MSG of 10 dB at 60 GHz are obtained. The extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This noise performance is comparable to the lowest value of Fmin ever reported for an AlInAs/InGaAs HEMT with a passivation film.

Confocal laser scanning microscope (CLSM) is capable of delivering a high axial resolution, and with this instrument even thin layers of cells can be imaged in good quality. Therefore, intracellular uptake and distribution properties of photosensitizer zinc coproporphyrin III tetrasodium salt (Zn CP-III) in human lung small cell carcinoma (Ms-1) were examined by using CLSM. In particular, the uptake of Zn CP-III in cytoplasm, plasma membrane, and nucleus was individually evaluated for the first time from fluorescence images obtained by CLSM. The results show that the Zn CP-III content in three cellular areas correlates with extracellular Zn CP-III concentration and time of incubation with Zn CP-III. Furthermore, it was found that the cytoplasmic fluorescence was approximately two times higher than that in the nucleus under all uptake conditions. In addition, cellular accumulation of Zn CP-III was compared with photodynamic cytotoxicity. The photocytotoxicity was to a great extent dependent on the uptake of the photosensitizer. The damaged site of Ms-1 cells induced by photodynamic therapy was plasma membrane. However, the content of Zn CP-III accumulated in cytoplasm was the highest among the three areas, implying that, besides the direct damage on plasma membrane, an oxidative damage to cellular component arose from the cytoplasmic Zn CP-III may also play an important role in photocytotoxicity. The quantitative information obtained in this study will be useful for further investigation of the photocytotoxicity as well as the uptake mechanism of photosensitizer.

This study attempts to demonstrate that activated leukocytes are involved in vascular shut down effect (VSD) in photodynamic therapy (PDT). Hydrogen peroxide (H2O2), a reactive oxygen specie (ROS) that is found in monocytes, was visualized under a confocal laser scanning microscope, and ROS formation was quantified by fluorescence image analysis. The fluorescence intensity was expressed as a gray level graded from 0 to 255. Only the fluorescence derived from monocytes that had ZnCP-III incorporated and were irradiated with an HeNe laser caused increases in the fluorescence distribution over time, while no change of distribution was observed in three other conditions (only Zn CP-III added, only HeNe laser irradiation, or non-treated). The result indicates that the photochemical reaction induced by excitation of a photosensitizer, and ROS was derived from the reaction-stimulated monocytes. The activated monocytes generated ROS themselves and H2O2 was visualized by the DCFH fluorescence method. In conclusion, the result clearly shows that activated monocytes are involved in the VSD effect.

A Q-band high gain and low noise Variable Gain Amplifier (VGA) module using dual gate AlGaAs/InGaAs pseudomorphic HEMTs has been developed. The dual gate HEMT can be fabricated by the same process of the single gate HEMT which has the gate length of 0.15 µm. The Q-band VGA module consists of a 1-stage low noise amplifier (LNA) MMIC using a single gate HEMT and a 2-stage VGA MMIC using dual gate HEMTs. During the design, an accurate noise modeling is introduced to achieve low noise performance. A fully passivated film is employed to achieve reliability. The VGA module has a gain of more than 20 dB from 41 GHz to 52 GHz and a maximum gain of 24.5 dB at 50 GHz. A gain control range of more than 30 dB is achieved in the same frequency range. A phase deviation is less than 10 degrees in 10 dB gain control range. A minimum noise figure of 1.8 dB with an associated gain of 22 dB is achieved at 43 GHz and the noise figure is less than 2.5 dB with associated gain of more than 20 dB from 41 GHz to 46 GHz when biased for low noise figure. This performance is comparable with the best data ever reported for LNAs at Q-band including both GaAs based HEMTs and InP based HEMTs.

We proposed a new thchnique using saw wave modulation light to measure the thermal diffusivity of a transparent adhesive by photoacoustic microscope. In this technique, the time required for the measurement of it can be reduced by one-fifth compared with that of a conventional method.

An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of-the-art noise figure for low noise amplifiers around 50 GHz. The success of this LNA development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.

A novel sensor system of denture base type was developed for simultaneous monitoring of salivary pH and tissue temperature in the oral cavity. Fundamental components of the monitoring system, sensor devices and sensor configuration are showed in this paper. The sensor units consist of IrO2 electrode and thermistor circuit implanted in the denture base that is tightly fixed in the oral cavity. The signals are transmitted by PFM-FM telemeter system that can be used for health care of the aged people without restraint of their daily behavior while at work, sleeping and even at exercise. Some of results concerning the basic characteristics of the sensor system and continuously monitored physiological data were obtained from the preliminary experiments. Availability of the whole system and monitoring method was discussed.

A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced resistance change method. The outer dummy protects via chain pattern from local flare and optical proximity effects. Using this test structure, we can identify the failure point in the 1.2 k and 15 k via chain fabricated by Cu/low-k single damascene process. This test structure is beneficial in the application to the 65 nm-node technologies and beyond.

For the electric demand prediction problem, a modification mechanism of predicted demand data has been proposed in the previous work. In this paper, we analyze the performance of the modification mechanism in power balancing control. Then, we analytically derive an upper bound of the performance, which is characterized by system parameters and prediction precision.

This paper describes the reliability on recess type T-shaped gate HEMTs and their major failure mechanism investigated by accelerated life tests and following failure analysis. In this study, high temperature storage tests with a DC bias condition have been conducted on three different recess depths of 100, 125, and 150 nm. The results have clarified that the shallow recess devices of under 125 nm depth have no degration in minimum noise figure Fmin or gain Ga characteristics, indicating that standard HEMT devices, whose recess depth is chosen to be far under 125 nm, possess a sufficient reliability level. However, the devices with deep recess of 150 nm have shown degradation in both Fmin and Ga. Precise failure analyses including SEM observation and von Mises stress simulation have firstly revealed that the main failure mode in deeply recessed T-shaped gate HEMTs is increase in gate electrode's parasitic resistance Rg, which is caused by separation of "head" and "stem" parts of the T-shaped gate electrode due to thermo-mechanical stress concentration.

This paper presents a new idea of photometric stereo method which uses 3 point light sources as illumination source. Its intention is to extract the 3-D information of gastric surface. The merit of this method is that it is applicable to the textured and/or specular surfaces, moreover whose environment is too narrow, like gastric surface. The verification of the proposed method was achieved by the theoretical proof and experiment.