In this work we propose a recursive electric circuit which has a fractal structure composed of resistances and capacitors. It is first confirmed in practice that such a device, which is referred as fractance, possesses a novel characteristics between the constituent elements, or the resistance and the capacitance. That is, the absolute value of the impedance shows such a characteristics as |Z|ω-1/2, whereas the phase angle does such a constant phase property as θ=-π/4 independent of the frequency. As an application of the presently proposed fractance device, we constructed a fractional integral circuit as well as a fractional differential circuit, and confirmed that the observed output wave forms agree well with those derived from a computer simulation.

A model for time spread-pulse position modulation (TS-PPM)/code division multiple access (CDMA) systems is presented. A TS signal is produced by a TS-filter, whose characteristic is a pseudonoise sequence in frequency domain. The error probability performance is analyzed and compared with those of on-off keying (OOK) and binary phase shift keying (BPSK). It is shown that at the same transmission speed TS-PPM is superior to TS-OOK and TS-BPSK due to the dramatic decrease of multiple access interference. The throughput of the network is analyzed, and its relation to the length of pseudonoise sequence and the packet length is also discussed.

In mobile communication systems using Dynamic Channel Assignment, channels are possible to be rearranged so that blocking probability can be made low. The smaller the number of cells where channels are rearranged, the smaller the load on the base stations in the cells. Also, we can reduce the deterioration of communication quality caused by reassingning a new channel to a call instead of the channel already assigned. In this paper, we consider not only how to rearrange channels but also which channel should be rearranged and assigned to a new call in rearrangement, and propose very simple but effective methods for rearrangement. The ways to select a candidate channel to be rearranged and assigned to a new call in the new methods make the number of cells where a channel is rearranged smaller. We also examine the relations between characteristics and the number of cells where a channel is rearranged. Using computer simulation results, the properties of the new rearrangement methods are compared with those of the traditional methods.

The rising demand for mobile communication is increasing the importance of efficient use of limited radio frequency resources. The assignment of radio channels to the cells of current cellular mobile radio systems, specifically, to each base station, has been much studied to increase efficiency in radio frequency use. Dynamic Channel Assignment (DCA) is one approach to this problem. This paper compares the basic characteristics of DCA with Fixed Channel Assignment (FCA) and describes the main DCA strategies. The most important current research topics on DCA are discussed, focusing on micro-cellular systems, which are considered indispensable in meeting the huge demand for future mobile communications.

An adaptive fuzzy network (AFN) is described that can be used to implement most of fuzzy logic functions. We introduce a learning algorithm largely borrowed from backpropagation algorithm and train the AFN system for several typical fuzzy problems. Simulations show that an adaptive fuzzy network can be implemented with the proposed network and algorithm, which would be impractical for a conventional fuzzy system.

This is a partly expository paper discussing how point processes with certain "bursty" features can be qualitatively modelled by the Markovian arrival process, a generalization of the Poisson or Bernoulli processes which can be used to obtain algorithmically tractable matrix solutions to a variety of problems in probability models.

Thin- and ultra-thin-film SOI MOSFET's are promising candidates to overcome the constraints for future miniaturized devices. This paper presents simulation results for a 0.1 µm gate length SOI MOSFET structure using a two-dimensional/two-carrier device simulator with a nonlocal model for the avalanche induced carrier generation. For the suppression of punchthrough effect in devices with a channel doping of 1 1016 cm-3 and 5 nm thick gate oxide it is found that the SOI layer thickness has to be reduced to at least 20 nm. The thickness of the buried oxide should not be smaller than 50 nm in order to avoid the degradation of thin SOI performance advantages. Investigating ways to suppress the degradation of the sub-threshold slope factor at these device dimensions it was found in contrast to the common expectation that the S-factor can be improved by increasing the body doping concentration. This phenomenon, which is a unique feature of thin-film depleted SOI MOSFET's, is explained by an analytical mode. At lower doping the area of the current flow is reduced by a decreasing effective channel thickness resulting in a slope factor degradation. Other approaches for S-factor improvement are the reduction of the channel edge capacitances by source/drain engineering or the decrease of SOI thickness or gate oxide thickness. For the latter approach a higher permittivity gate insulating material should be used in order to prevent tunnelling. The low breakdown voltage can be increased by utilizing an LDD structure to be suitable for a 1.5 V power supply. However, this is at the expense of reduced current drive. An alternative could be the supply voltage reduction to 1.0 V for single drain structure use. A dual-gated SOI MOSFET has an improved performance due to the parallel combination of two MOSFET's in this device. A slightly reduced breakdown voltage indicates a larger drain electric field present in this structure.

We analyzed vergence change by moving both the target and the subject toward depth direction simultaneously. It has been suggested that the command for vergence movement caused by depth-direction-head-movement and that caused by target movement are generated separately, then combined in the oculomotor system.

A vertex-capacitated network is a graph whose edges and vertices have infinite positive capacities and finite positive capacities, respectively. Such a network is a model of a communication system in which capacities of links are much larger than those of stations. This paper considers a problem of realizing a flow-saturation in an undirected vertex-capacitated network by adding the least number of edges. By defining a set of influenced vertex pairs by adding edges, we show the follwing results.(1) It suffices to add the least number of edges to unsaturated vertex pairs for realizing flow-saturation.(2) An associated graph of a flow-unsaturated network defined in this paper gives us a sufficient condition that flow-saturation is realized by adding a single edge.

In this paper, scattering waves by a strip grating with an anisotropic substrate for the incidence of inclined polarization are analyzed, and polarization characteristics of scatterd waves are calculated. For simplicity, the analysis is limitted to the case of normal incidence and a perfectly conducting strip grating is assumed.

Frequency Selective Screens (FSS) with conductor or complementary aperture array are investigated. The electric current distribution on conductor or the magnetic current distribution on aperture is determined by the moment method in the spectral domain. In addition, the power reflection coefficients are calculated and the scattering properties are considered.

In this paper, we propose a new network organizing method for packet radio networks, a layered self-organizing method. In the layered self-organizing network, whole service area is divided into multiple sub-areas and one base station is settled in each sub-area. Communication links are settled in shorter time than the conventional self-organizing method. We evaluate the network organizing performance of the method by using simulations.

Chaotic behavior in a series resonance circuit with a ferroelectric triglycine sulfate (TGS) crystal was observed just below the ferroelectric phase transition temperature. We have analyzed the nonlinear responses by applying external electric fields to the crystal. The computer simulation was made for the modified forroelectric hysteresis loops to realize the experimental results. The fractal correlation dimension was determined to be ν=1.8 in the chaotic phase.

This paper surveys the developments and achievements of teletraffic studies in Japan. It briefly covers the period preceding 1970, then focuses on the period after 1970. Rather than attempting to cover the entire field of teletraffic engineering, it places its emphasis on basic models.

Let TBP be the server busy period of an M/G/1 queueing system characterized by arrival intensity λ and service time c.d.f. A(τ). In this paper, we investigate the regularity structure of the Laplace transform σBP(s)=E[] on the complex s-plane. It is shown, under certain broad conditions, that finite singular points of σBP(s) are all branch points. Furthermore the branch point s0 having the greatest real part is always purely negative and is of multiplicity two. The basic branch point s0 and the associated complex structure provide a basis for an asymptotic representation of various descriptive distributions of interest. For a natural relaxation time |s0|-1 of the M/G/1 system, some useful bounds are obtained and the asymptotic behavior as traffic intensity approaches one is also discussed. Detailed results of engineering value are provided for two important classes of service time distributions, the completely monotone class and the Erlang class.

Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔVth(b) is twenty times as large as ΔVth(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β0 in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from Vth (f) dependence on back gate bias. For Leff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase gm(f) through the effect equivalent to back gate bias. From gm(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, gm is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.

With the use of a two-dimensional model, single laser beam trapping of particles is analyzed as the electromagnetic boundary-value problem. From the numerical results, it is found that the trapping mechanism for this system depends upon the surface field distribution of the object.

This paper describes the higher-order moment analysis of superposed Markov jumping processes. A superposed Markov jumping process is defined as a linear superposition of a finite number of piecewise constant real valued stochastic process whose value changes are associated with state transitions in an underlying descrete state continuous time Markov process. Some phenomena are modeled well by the process such as membrane current fluctuations observed at bio-membranes or load fluctuations in electrical power systems. Theoretical formula of the moment function of any order k is derived and the parameter estimation problem utilizing higher-order moment functions is discussed. A new method of estimating the kinetic parameters of membrane current fluctuations is proposed as a possible application.