A novel charge pump, Capacitance Varying Charge Pump (CVCP) is proposed. This charge pump is composed of variable capacitors and rectifiers, and the charge transfer is attained by changing the capacitance values in a manner similar to peristaltic pumps. The analysis of multi-stage CVCP reveals that the output voltage is exponentially dependent on the stage number. Thus, compared with the Dickson charge pump, this charge pump has an advantage in generating high voltages with small stages. As a practical example of CVCP, we present an implementation realized by a MEMS (Micro-Electro-Mechanical Systems) technology. Here, the variable capacitor is enabled by a comb-capacitor attached to a high-quality factor resonator. As the rectifier, a PN-junction diode formed in the MEMS layer is used. Simulations including the mechanical elements are carried out for this MEMS version of CVCP. The simulation results on the output voltage and load characteristics are shown to coincide well with the theoretical estimations. The MEMS CVCP is suited for MEMS devices and vibration energy harvesters.

A demonstration of power enhancement by nonlinear oscillation in a millimeter-sized electrostatic vibrational energy harvester for the future Internet of Things is presented. To enable nonlinearity in microelectromechanical system (MEMS) devices, we selected a gold spring as a component of the MEMS structure for its lower Young's modulus than conventional materials, a ductile characteristic, and an electrical conductivity. The mechanical characteristics of the fabricated MEMS device related to the nonlinear phenomenon were examined. The charging characteristics of an ethylene tetrafluoroethylene copolymer (ETFE) electret film for electrostatic induction were also evaluated. Nonlinear oscillation for the millimeter-sized energy harvester with the ETFE electret was confirmed experimentally by applying external vibration. The oscillation resulted in a bandwidth two times broader than that by linear oscillation. The normalized harvester effectiveness of the nonlinear oscillation was 5.1 times higher than that of the linear one.

A gold coated carbon nanotubes composite was used as a contact material in Micro-Electrical-Mechanical-System (MEMS) switches. The switching contact was tested under typical conditions of MEMS relay applications: load voltage of 4 V, contact force of 1 mN, and load current varied between 20-200 mA. This paper focuses on the wear process over switching lifetime, and the dependence of the wear area on the current is discussed. It was shown that the contact was going to fail when the wear area approached the whole contact area, at which point the contact resistance increased sharply to three times the nominal resistance.

A portable biofuel cell with an anode modified with glucose oxidase/ferrocene and a cathode modified with bilirubin oxidase was fabricated on a flexible polyimide substrate. The anode and the cathode with an area of 3$ imes$10,mm$^2$ were separated with a gap of 1,mm. Solidified glucose biofuel units were prepared by solidifying 50--200,mM glucose aqueous solution containing 0.5--2.5% agarose. The influences of the biofuel volume and glucose concentrations on power generation were investigated. The maximum power density was almost independent on the agarose concentration, and it continuously decreased as time clasped possibly due to the consumption of glucose and/or release of the enzymes from the electrodes. The maximum power and power density were 0.32 $mu $W and 1.08,$mu $W/cm$^2$ at 0.17,V, respectively when the solidified hydrogel biofuel unit with a dimension of 13$ imes$24$ imes$4 mm$^3$ containing the 100,mM glucose aqueous solution and 2.5, wt% agarose was used. The biofuel cell continued to deliver the power density over 0.5,$mu $W/cm$^2$ for more than 1,h.

A deeply-coupled system can feed the INS information into a GNSS receiver, and the signal tracking precision can be improved under dynamic conditions by reducing tracking loop bandwidth without losing tracking reliability. In contrast to the vector-based deep integration, the scalar-based GNSS/INS deep integration is a relatively simple and practical architecture, in which all individual DLL and PLL are still exist. Since the implementation of a deeply-couple system needs to modify the firmware of a commercial hardware GNSS receiver, very few studies are reported on deep integration based on hardware platform, especially from academic institutions. This implementation-complexity issue has impeded the development of the deeply-coupled GNSS receivers. This paper introduces a scalar-based MEMS IMU/GNSS deeply-coupled system based on an integrated embedded hardware platform for real-time implementation. The design of the deeply-coupled technologies is described including the system architecture, the model of the inertial-aided tracking loop, and the relevant tracking errors analysis. The implementation issues, which include platform structure, real-time optimization, and generation of aiding information, are discussed as well. The performance of the inertial aided tracking loop and the final navigation solution of the developed deeply-coupled system are tested through the dynamic road test scenarios created by a hardware GNSS/INS simulator with GPS L1 C/A signals and low-level MEMS IMU analog signals outputs. The dynamic tests show that the inertial-aided PLL enables a much narrow tracking loop bandwidth (e.g. 3Hz) under dynamic scenarios; while the non-aided loop would lose lock with such narrow loop bandwidth once maneuvering commences. The dynamic zero-baseline tests show that the Doppler observation errors can be reduced by more than 50% with inertial aided tracking loop. The corresponding navigation results also show that the deep integration improved the velocity precision significantly.

Multi-Walled CNT (MWCNT) are synthesized on a silicon wafer and sputter coated with a gold film. The planar surfaces are mounted on the tip of a piezo-electric actuator and mated with a gold coated hemispherical surface to form an electrical contact. These switching contacts are tested under conditions typical of MEMS relay applications; 4V, with a static contact force of 1mN, at a low current between 20-50mA. The failure of the switch is identified by the evolution of contact resistance which is monitored throughout the switching cycles. The results show that the contact resistance can be stable for up to 120 million switching cycles, which are 106 orders of higher than state-of-the-art pure gold contact. Bouncing behavior was also observed in each switching cycle. The failing mechanism was also studied in relation to the contact surface changes. It was observed that the contact surfaces undergo a transfer process over the switching life time, ultimately leading to switching failure the number of bounces is also related to the fine transfer failure mechanism.

This paper develops a methodology of crosstalk analysis/measurement techniques for the design and fabrication of the MEMs (Micro-ElectroMichanical system) probe card. By introducing more ground pins into the connector pins, the crosstalk characteristics can be enhanced and a design guide for the parameters, such as pin's size and pitch is proposed to satisfy the given crosstalk limitation of -30 dB for reliable high speed signal transfer. The paper also presents a novel method to characterize scattering parameters of multiport interconnect circuits with a 4-port VNA (Vector Network Analyzer). By employing the re-normalization of scattering matrices with different reference impedances at other ports, data obtained from 4-port configuration measurements can be synthesized to build a full scattering matrix of the DUT (Device-Under-Test, MEMs probe connector pins). In comparison to the conventional 2-port VNA re-normalization method, proposed technique has two advantages: saving of measuring time, and enhanced accuracy even with open-ended unmeasured ports. A good agreement of the estimated and correct S parameters verifies the validness of the proposed algorithm.

Chemical sensors are one of the oldest fields of research closely related to the semiconductor technology. From the Ion-Sensitive Field-Effect Transistors (ISFET) in the 70's, through Micro-Electro-Mechanical-System (MEMS) sensors from the end of the 80's, chemical sensors are combining in the 90's MEMS technology with LSI intelligence to devise more selective, sensitive and autonomous devices to analyse complex mixtures. A brief history of chemical sensors from the ISFET to the nowadays LSI integrated sensors is first detailed. Then the states-of-the-art of LSI integrated chemical sensors and their wide range of applications are discussed. Finally the authors propose a brand-new usage of integrated wireless MEMS sensors for remote surveillance of chemical substances, such as food-industry or pharmaceutical products, that are stored in closed environment like a bottle, for a long period. In such environment, in-situ analyse is necessary, and electrical cables, for energy supply or data transfer, cannot be used. Thanks to integrated MEMS, an autonomous long-term in-situ quality deterioration tracking system is possible.

We demonstrate the wavelength trimming of MEMS VCSELs by etching a cantilever-shaped top mirror using FIB etching. The proposed technique can be used for the post-process precise wavelength allocation of athermal MEMS VCSELs. The modeling and experimental results on 850 nm MEMS VCSELs are presented. The results show a possibility of realizing both red-shift and blue-shift wavelength changes by choosing the etching area of the cantilever.

In this brief paper, both static and dynamic behaviors of an electrostatic-actuated MEMS mirror are modeled and studied. To overcome the intrinsic pull-in problem and the dynamic disadvantages in the open-loop controlled actuation, a novel closed-loop feedback control method is proposed assuming the mirror tilt angle can be measured. First, a fixed voltage slightly higher than the pull-in voltage is applied when the mirror tilt angle is small. Then Proportional-Derivative (PD) control is used when the mirror is approaching the target position. Simulink simulation results show that this combined PD closed-loop control can overcome the pull-in problem and improve the dynamic behavior; furthermore, it can also enhance the robustness of the mirror actuation system to overcome environmental disturbances.

As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimeter-wave or terahertz-wave region and achieve high speed and large-capacity data transmission; and (iii) microminiaturized low-power RF communication systems that will be extensively used in our everyday lives. However, classical technology for designing analog RF circuits cannot be used to design circuits for the abovementioned devices since it can be applied only in the case of continuous voltage and continuous time signals; therefore, it is necessary to integrate the design of high-speed digital circuits, which is based on the use of discrete voltages and the discrete time domain, with analog design, in order to both achieve wideband operation and compensate for signal distortions as well as variations in process, power supply voltage, and temperature. Moreover, as it is thought that small integration of the antenna and the interface circuit is indispensable to achieve miniaturized micro RF communication systems, the construction of the integrated design environment with the Micro Electro Mechanical Systems (MEMS) device etc. of the different kind devices becomes more important. In this paper, the history and the current status of the development of RF CMOS circuits are reviewed, and the future status of RF CMOS circuits is predicted.

We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.

This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.

MEMS storage devices are new non-volatile secondary storages that have outstanding advantages over magnetic disks. MEMS storage devices, however, are much different from magnetic disks in the structure and access characteristics in the following ways. They have thousands of heads called probe tips and provide the following two major access facilities: (1) flexibility : freely selecting a set of probe tips for accessing data, (2) parallelism: simultaneously reading and writing data with the set of probe tips selected. Due to these characteristics, it is nontrivial to find data placements that fully utilize the capability of MEMS storage devices. In this paper, we propose a simple logical model called the Region-Sector (RS) model that abstracts major characteristics affecting data retrieval performance, such as flexibility and parallelism, from the physical MEMS storage model. We also suggest heuristic data placement strategies based on the RS model. To show the usability of the RS model, we derive new data placements for relational data and two-dimensional spatial data by using these strategies. Experimental results show that the proposed data placements improve the data retrieval performance by up to 4.7 times for relational data and by up to 18.7 times for two-dimensional spatial data of approximately 320 Mbytes compared with those of existing data placements. Further, these improvements are expected to be more marked as the database size grows.

In order to incorporate the reader/writers (RWs) into mobile electronic devices, miniaturization and flexibility are required. To meet these requirements, we fabricate an ultra-small RW with multiple contactless interfaces by mounting main unit circuits inside the antenna coil and using flexible multi-layer circuit board.

This paper proposes a novel wide-tunable CMOS low-noise amplifier (LNA) using a variable inductor. The variable inductance can be tuned by shielding the magnetic flux, which uses a metal plate above the inductor. The metal plate can be moved using a MEMS actuator. At the present time, the MEMS actuator has not been implemented yet. In this paper, we present a feasibility study on the proposed LNA using the variable inductor. The proposed LNA uses two variable inductors for input and output impedance matching-tuning. The LNA achieves a power gain (PG) of over 10 dB at a tuning range of 1.6-3.2 GHz.

Two-dimensional resonant optical scanners actuated by vertical electrostatic combs with a unique electrical isolation structure have been developed. The isolation on the movable frame surrounding 1 mm-diameter gimbal mirror is made by trenching the top silicon layer of an SOI wafer with leaving the thick bottom layers. Thanks to the large mass of the frame, the resonant frequencies range in 65.0-89.2 Hz for the frame and in 11.9-36.8 kHz for the mirror in a 4 mm4 mm chip. The resultant frequency ratio of the fast/slow axes reaches over 500 and such a high frequency ratio is utilized to display QVGA image by raster scanning of a laser beam.

Phased array antennas are attractive in terms of low cost and power consumption. This paper proposes a controlling scheme based on a bisection method for phased array antennas employing phase shifters with slow switching speed, which is typical for Micro Electro Mechanical Systems (MEMS) switches. Computer simulation results, assuming the IEEE 802.11a Wireless Local Area Network (WLAN) standard, show that the proposed scheme has good gain enhancement capability in multipath fading channels.

A sandwich structure type RF-MEMS variable capacitor is proposed, that consists of a movable middle plate, and fixed top and bottom plates having different areas. Simulation results show that the proposed capacitor can operate at a control voltage of less than 3.2 V; it achieves a tuning range of 4.8:1 (capacitance:630-130 fF) in the range of 0 to 3.2 V and at a frequency of 7.5 GHz.

This work describes a 12 b 200 kS/s 0.52 mA 0.47 mm2 ADC for sensor applications such as motor control, 3-phase power control, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with a recycling signal path to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels employs a folded-cascode amplifier to achieve a required DC gain and a high phase margin. A 3-D fully symmetric layout with critical signal lines shielded reduces the capacitor and device mismatch of the multiplying D/A converter while switched-bias power-reduction circuits minimize the power consumption of analog amplifiers. Current and voltage references are integrated on chip with optional off-chip voltage references for low glitch noise. The down-sampling clock signal selects the sampling rate of 200 kS/s and 10 kS/s with a further reduced power depending on applications. The prototype ADC in a 0.18 µm n-well 1P6M CMOS process demonstrates a maximum measured DNL and INL within 0.40 LSB and 1.97 LSB and shows a maximum SNDR and SFDR of 55 dB and 70 dB at all sampling frequencies up to 200 kS/s, respectively. The ADC occupies an active die area of 0.47 mm2 and consumes 0.94 mW at 200 kS/s and 0.63 mW at 10 kS/s with a 1.8 V supply.