We have achieved the room temperature cw lasing operation of GaInAsP/InP surface emitting lasers for the first time. By employing a buried heterostructure with 1.3 µm range active region and a MgO/Si heat sink mirror, cw operation was obtained up to 14 with the threshold current of 22 mA.

In this paper, a construction of de Bruijn sequences using maximum length linear sequences is considered. The construction is based on the well-known cross-join (CJ) method: Maximum length linear sequences are used to produce de Bruijn sequences by the CJ process. Properties of the CJ paris in the maximum length linear sequences are investigated. It is conjectured that the number of CJ pairs in a maximum length linear sequence is given by (22n-3+1)/3-2n-2, where n2 is the length of the linear feedback shift register with the sequence. The CJ paris for some special cases are obtained. An algorithm for finding CJ pairs is described and a method of implementation is discussed briefly.

A simple method is given for obtaining new families of pseudonoise (PN) sequences based on chaotic non-linear maps. Such families are worse than the Gold and the Kasami families in terms of maximum correlation values. Nevertheless, such a method has several advantages: the generation is easy, and various families with an arbitrary family size and sequence period can be obtained primarily because non-linear maps have several parameters to be secret keys for communications security. Hence these sequences are good candidates of spreading sequences for CDMA.

Three dimensional (3-D) optics offers potential advantages to the massively-parallel systems over electronics from the view point of information transfer. The purpose of this paper is to survey some aspects of the 3-D optical interconnection technology for the future massively-parallel computing systems. At first, the state-of-art of the current optoelectronic array devices to build the interconnection networks are described, with emphasis on those based on the semiconductor technology. Next, the principles, basic architectures, several examples of the 3-D optical interconnection systems in neural networks and multiprocessor systems are described. Finally, the issues that are needed to be solved for putting such technology into practical use are summarized.

Numerical solutions for the near-field of microstrip antennas are presented. The field distribution is calculated by taking the inverse Fourier transform involving the current distribution with the help of the spectral-domain moment method. A new technique to save the computation time is devised, and the field pattern of the circularly polarized antenna is illustrated.

In this letter, the effectiveness of the quasi-TEM approximation is studied for the microstrip line including optically induced semiconductor plasma region. This approximation is considered to be efficient under several restrictions such as the upper limit of the microwave frequency and the plasma density.

We analyze the mutual coupling between two microstrip antennas (MSAs) with the finite-difference time-domain (FDTD) method. It is suitable for substrates which have a complex configuration or include feed line structures. The mutual coupling between two MSAs on discontinuous orthogonal substrates is successfully calculated.

In this paper, the characteristics of microstrip lines near the edge of dielectric substrate are analyzed by improving the rectangular boundary division method. The numerical results indicate the changes of the characteristics of a microstrip line when the strip conductor is closely located to the edge. When the distance the dielectric substrate edge to the strip conductor is less than the thickness of dielectric substrate, the effects of the edge on the line characteristics are no longer negligible. The numerical results in this paper show high computation accuracy without increasing computation time. Our improvement is effective for the analysis of the microstrip lines both for the narrow strip conductor and the strip conductor close to the edge. The relative errors between the numerical results and the measured values are less than 1.2%.

The paper deals with the level-crossing intervals of a stationary random process. Probability densities of the level-crossing intervals of a process consisting of a sine wave plus Gaussian random noise are experimentally investigated by digital simulation. The Gaussian random noise is selected to be of 7-th order Butterworth power spectrum density. The obtained probability densities appear with a number of isolated peaks much larger than the number observed on the corresponding probability densities of the Gaussian noise alone. When the sine wave frequency is greater than or approximately equal to the half of the cutoff frequency of the noise spectrum, experimental data suggest that each isolated peak has a Gaussian-like density. The mean time interval associated with each Gaussian-like density is equal to a multiple number of the period of the sine wave, while the variance is found to be fairly the same for all peaks of a same probability density. The assumption of "quasi-independence" is not valid for the level-crossing intervals of the present process.

In this paper, boundary integral equations are derived from the Green's identity of the second kind in circular cylindrical coordinates, and are applied to determine the resonant frequencies of shielded circular ring and disk resonators. The integral equations are numerically solved by discretizating the integration path representing the air-dielectric interface and the surface of thick strip conductor. Because of the choice of the eigen-functions as weighted functions instead of Green's functions, the overall integral path length is shortened and computational time is reduced. Computational results on thick circular disk and ring resonators are compared with other available numerical results and experimental data.

In coherent optical subcarrier multiplexing (SCM) systems, the performance degradation of the system due to the phase noise of lasers restricts the maximum number of stations and channels that the system can serve. However, the effects of phase noise on the performance of the coherent SCM system with distributing Local Oscillator (LO) in local loop have not been analyzed. On the other hand, a limit on both the number of channels and stations can be effectively alleviated by using coding technique. In this paper, the effects of phase noise of lasers on the performance of frequency shift keying (FSK) SCM system with distributing LO in local loop are analyzed in terms of carrier-to-noise ratio (CNR) penalty. Second, the effects of Reed-Solomon (RS) coding on FSK SCM system with distributing LO in local loop are analyzed. It is shown that both the number of channels and stations can be increased by using coding technique.

For a method to control the microwave coupled lines with optically induced plasma effectively, we propose the selective mode-control method, which restricts controlled modes to a selected one. We analyzed the basic characteristics of coupled microstrip lines theoretically by using the spectral domain technique and indicated the effectiveness of this method with the aid of numerical results. Further, we designed an optically controlled change-over switch as an application of this method.

Reactive gases such air pollution agents as H2S or SO2 usually corrode the electrical contact surfaces. Since corrosion products formed on the surface increase contact resistance, they harmfully degrades contact reliability. To prevent the corrosion of the surface, oil coating on it may be effective. The oil film acts basically as a barrier for reaction between the corrosive gas and the surface. For thin film coating, the corrosion inhibition can not be expected. However, effect of film thickness on the corrosion property has not been clarified. In the present study, in order to clarify the corrosion inhibition of the oil coating for the contacts, the stearic acid coating on Ag (silver) contact surface was studied from view-point of the relationship between the thickness of the coating film and the contact resistance. As results, the effect of the stearic acid coating on corrosion inhibition in the atmosphere contained with H2S 3 ppm was found. However, the corrosion of the surface coated with thin stearic acid film occurred at microscopically scattered thin patiches in the specific pattern of the film. Existing of the optimum thickness of the stearic acid coating which gives both minimum contact resistance and effective corrosion inhibition was found. In the intermediate film thickness, this optimum thickness was induced by the increased contact resistance due to corrosion of the thin film region and insulation property of the stearic acid in the thick film region. Moreovr,it was found that this optimum thickness was affected by corrosion time. At the early stage of corrosion, the optimum thickness was about 200 . However, the corrosion time becomes longer as 700 min, this optimum thickness changed to thick as 1000 . With this increase in the thickness, the contact resistance in the optimum thickness rised to high level. Furthermore, the contact resistance in the optimum thickness decreased with increase in the contact load. However, dependence of the contact load on the optimum thickness was not recognized under a certain corrosion time.

The erosion of contact metal, which determines the life of contacts in the telephone switching system, is proportional to the arc energy. The equations for arc voltage, arc current, arc duration time and number of arcs are expressed explicitly in terms of circuit parameters and contact properties, and the expression is derived for arc energy that accompanies a single operation of contact closure. Contact erosion is consistent with the calculated arc energy. The erosion rate at closure is estimated based on the measured contact-erosion volume and the calculated arc energy. Arc energy at contact closure becomes as large as that at contact break if the cable is long or the supply voltage is high. This expression in combination with the expression for contact break enabled us to perform contact life design, which is indispensable for maintenance administration of telephone switching systems.

The diffraction of a plane electromagnetic wave by a parallel-plate waveguide cavity with a thick planar termination is rigorously analyzed for both the E and the H polarization using the Wiener-Hopf technique. Introducing the Fourier transform for the unknown scattered field and applying boundary conditions in the transform domain, the problem is formulated in terms of the simultaneous Wiener-Hopf equations, which are solved exactly in a formal sense via the factorization and decomposition procedure. Since the formal solution involves an infinite number of unknowns and branch-cut integrals with unknown integrands, approximation procedures based on rigorous asymptotics are further presented to yield the approximate solution convenient for numerical computations. The scattered field inside and outside the cavity is evaluated by taking the inverse Fourier transform and applying the saddle point method. Representative numerical examples of the monostatic and bistatic radar cross sections are presented for various physical parameters, and the scattering characteristics of the cavity are discussed in detail.

In this paper, a new scheme for ohrase recognition in conversational speech is proposed, in which prosodic and phonemic information processing are usefully combined. This approach is employed both to produce candidates of phrase boundaries and to discriminate phonemes. The fundamental frequency patterns of continuous utterances are statistically analyzed and the likelihood of the occurrence of a phrase boundary is calculated for every frame. At the same time, the likelihood of phonemic characteristics of each frame can be obtained using a hierarchical clustering method. These two scores, along with lexical and grammatical constraints, can be effectively utilized to develop a possible word sequences or a word lattices which correspond to the continuous speech utterances. Our preliminary experjment shows the feasibility of applying prosody for continuous speech recognition especially for conversational style utterances.

The composition of CMOS control circuit and Vertical-Double-Diffused-MOS (VDMOS) power device on a single chip by using Silicon-On-Insulator (SOI) structure is formulated. Because all the MOS transistors in the CMOS control circuit are not isolated by the trenches, the interference phenomenon between SOI and the substrate is studied. Latch-up is detected thus, the construction of a mechanism to prevent latch-up is also studied. To evaluate the SOI CMOS characteristics the effects of voltage fluctuation on the substrate is analized. The latch-up mechanism is also analized by transient device simulation. As a result of this study a guideline for the immunity of latch-up is established, the features of the mechanism are as follows. First, the latch-up trigger is the charging current of the condenser composed of the oxide layer in the SOI structure. Second, latch-up is normally caused by positive feedback between the parasitic PNP-transistor and the parasitic NPN-transistor. However, in this case, electron diffusion toward the P-well is dominant after the parasitic PNP-transistor falls into high level injection. This feature is different from the conventional mechanism. The high level injection is caused by carrier accumulation in the N- region. Considering the above, it is necessary to; (1) reduce the charging current of the condenser, (2) reduce the parasitic resistance in the N- region of SOI, and (3) reduce the carrier accumulation in SOI for immunity from latch-up.

The static characteristics of GaInAs(P)/GaInAsP quantum well laser diodes (QW LDs), with graded-index separate-confinement-heterostructure (GRIN-SCH) grown by metalorganic chemical vapor deposition (MOCVD), have been investigated experimentally in terms of threshold current density, internal waveguide loss, differential quantum efficiency and light output power. Very low threshold current density of 410 A/cm2, high characteristic temperature of 113 K, low internal waveguide loss of 5 cm-1, high differential quantum efficiency of 82% and high light output power of 100 mW were obtained in 1.3 µm GRIN-SCH multiple quantum well (MQW) LDs by optimizing the quantum well structure including confinement layer and cavity design. Excellent uniformity for the threshold current, quantum efficiency and emission wavelength was obtained in all MOCVD grown buried heterostructure GRIN-SCH MQW LDs. Lasing characteristics of 1.5 µm GRIN-SCH MQW LDs are also described.

Recently most of the singularities of the equivalent edge currents for flat plates were eliminated by the authors using the paths of most rapid phase variation. A unique direction on the plate was determined for given incidence and observer. This paper extends this method for arbitrary angle wedges and presents the new expressions of the equivalent edge currents. The resultant expressions are valid for any incidence and observation aspects and have no false singularities. Diffraction patterns and radar cross sections of 3-D objects composed of wedges are calculated by using these currents. They show good agreements with experimental data or the results by the other methods.

A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 µm. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample.