This paper proposes a novel high-temperature superconducting dual-band bandpass filter (HTS-DBPF), that employs a broadside coupling structure, in which quarter-wavelength resonators are formed on opposite sides of each substrate. This structure provides a dual-band operation of the BPF and flexibility, in the sense of having a wide range in selecting two center passband frequencies of the HTS-DBPF. This paper employs the ratio of the lower and higher center passband frequencies, α, as a criterion for evaluating the flexibility. The obtained α ranges are from 1 to 4.7, which are the widest for DBPFs for mobile communications applications, to the best knowledge of the authors. This paper presents a 2.4-/2.9-GHz band HTS-DBPF, as an experimental example, using a YBCO film deposited on an MgO substrate. The measured frequency responses of the HTS-DBPF agree with the electromagnetic simulated results. Measurement and simulation results confirm that the proposed filter architecture is effective in configuring a DBPF that can set each center passband frequency widely.

We report on the spurious suppression effect in low-microwave power transmitters by high temperature superconducting (HTS) bandpass filters (BPFs) which are promising for devices requiring BPFs with high-frequency selectivity. Some of the major issues on the power BPFs with HTS planar circuits for wireless communication applications are reviewed. As a case study for the HTS filter and its spurious suppression effect, this paper describes an example of the measured power spectrum density (PSD) on the suppression effect by one of our developed power BPFs with YBCO films for the 5 GHz band. It was designed with equivalent cascade resonators of 16 poles. We demonstrated the effect by HTS power filter in a power amplifier for the 5 GHz band.

There are two interesting phenomena for the electrical contact characteristics of YBCO bulk. One is the transition between low and high contact resistance states at a threshold current value which is called a transfer current; the other is the forming reason of the residual resistance when the carrying current is lower than the transfer current. In this paper, an axial symmetric model is constructed to investigate these two phenomena. During the calculation, the thermal field, the electrical field and the self magnetic field are coupled with each other. The detailed fields' distributions are obtained. The calculation results are accordance with the experimental results. And some useful conclusions are drawn based on the numerical analyses.

A persistent current switch (PCS) is used for superconducting applications, such as superconducting magnetic energy storage (SMES) system. The authors have proposed a mechanical switch of Y-Ba-Cu-O (YBCO) bulk as a mechanical PCS. In previous study, the authors have successfully reduced a residual resistance by depositing with metal on contact surface. This paper focused on a current carrying area (called a-spot) on contact surface and presented an effect of deposited metal on electrical contact characteristics in order to clear the contact mechanism. As the results of experiments and simulation using FEM, it became clear that it was effective for reducing the residual resistance from a view point of increasing the a-spot by depositing with metal.

We have examined the improvement of filter properties using sapphire and nickel rod trimmers. We measured the resonance frequency of the hairpin resonator in the filter, and examined the difference between the simulated and measured values. When the measured resonance frequency was lower than the simulated frequency, we used a nickel trimmer to increase the resonance frequency, and when high, a sapphire trimmer to decrease the frequency. Our results showed that the use of sapphire and nickel rod trimmers is effective in improving the frequency response of HTS bandpass filters.

This paper presents RF power properties of YBCO films on LaAlO3 substrate examined using microstrip disk shape-patterned resonators for around 4 GHz. Characterization of the YBCO films for the resonators was carried out. For input-output power measurement, the resonators with the condition of strong I/O couplings were designed and fabricated. The RF power properties of the resonators at cryogenic temperatures were measured. The resonator condition to obtain the handling power over 10 W at 30 and 70 K was confirmed. The temperature dependence of the break-down powers at 4 GHz for the resonators showed two broad peaks. We discuss the unique phenomenon with magnetic flux model, as referred to the YBCO films characteristics results.

Double-sided YBa2Cu3O7 (YBCO) films were successfully prepared on 50-mm-diameter CeO2-buffered sapphire substrates by metalorganic deposition (MOD) process using an acetylacetonate coating solution. Mapping analysis of superconducting current densities (Jc) at 77.3 K revealed that Jc values of the double-sided films indicated in excess of 2 MA/cm2 in the center parts with a small decrease of Jc at the outer side of the specimens. The Jc values of one side (A) are higher than those of the other side (B). Microwave surface resistance (Rs) of sides A and B of the film exhibited 0.57 and 0.60 mΩ, respectively, at 70 K (12 GHz). The difference in the Rs values should be attributed to the slight difference in the Jc values, which arose from the surface morphology of the CeO2 buffer layer and heat treatment conditions during the firing process in MOD.

In-plane-aligned a-axis-oriented YBa2Cu3O7-δ (YBCO) thin films are attractive for the formation of planar intrinsic Josephson devices. In this study, these films were deposited by dc sputtering on LaSrGaO4 (LSGO) (100) substrates and the dependence of the characteristics on the deposition conditions was investigated. In-plane-aligned a-axis-oriented YBCO thin films were successfully grown in the substrate temperature range of 555-615. With the temperature gradient method, it was seen that the critical temperature of the film increased to 81 K. The current-voltage characteristic along the c-axis exhibited clear multibranch structures. These results indicate that ion-cleaning of the substrate surface broadens the growth temperature range of these films and planar intrinsic Josephson devices can be fabricated from these films.

High-Tc superconductors convincingly showed that these materials are essentially natural arrays of Josephson junctions formed in atomic scale. In this paper, in-plane aligned a-axis-oriented YBa2Cu3O7-δ (YBCO) thin films were successfully grown on LaSrGaO4(LSGO) (100) substrates which were cleaned by ion-beam. Voltage jumps with hysteresis implying intrinsic Josephson effects are observed in c-axis direction. This result suggest that it is possible to achieve planar intrinsic Josephson devices which have applications in high frequency electronics, such as voltage standards, Josephson masers and so on.

We have fabricated a novel type of intrinsic Josephson junctions with superconducting Bi2Sr2CaCu2O8+y (Bi-2212)/YBa2Cu3O7-x(YBCO) bilayer thin films deposited on MgO(100) substrates. We used the 4th harmonics of a Nd:YAG pulsed laser ablation. Furthermore, we studied the transport properties of a 25 µm 25 µm Bi-2212/YBCO mesa-type junction. The zero resistance temperature was around 50 K. The current-voltage characteristics showed flux-flow-like behavior and a supercurrent of about 2 mA at 4.2 K. Shapiro steps were observed when microwave was irradiated to the mesa junction. These Shapiro steps are attributed to the Josephson junction formed at the interface between the Bi-2212 and YBCO layers in the mesa structure and not to the intrinsic Josephson junctions in the Bi-2212 layer or the micro-grains within the films.

The magnetic shielding performance of the high-Tc superconducting (HTS) plate in a mixed state has been investigated numerically. By taking account of the crystallographic anisotropy of the HTS plate, the axisymmetric shielding plate is assumed to have a multiple thin-layer structure. Under the assumptions, the governing equations of the shielding current density can be expressed in terms of a scalar function. The numerical code to integrate the equation has been developed and, by use of the code, the shielding current density and the damping coefficient are calculated for the axisymmetric HTS plate in a mixed state. The results of computations show that the shielding current density localizes around the edge under the high-frequency magnetic field. With an increasing frequency of the applied magnetic field, the localization becomes remarkable and the shielding current density becomes larger until the flux flow occurs. In addition, the magnetic shielding performance of the HTS plate drastically changes with time under the low-frequency magnetic field below 100 Hz, whereas it is almost time-independent under the high-frequency magnetic field. Moreover, it turns out that the HTS plate can shield ac magnetic fields with a high frequency even if it remains in a mixed state.

Reentrant delay line memories using narrow YBa2Cu3O7-δ (YBCO) coplanar transmission lines are proposed. The proposed memory is composed of a looped YBCO coplanar delay line and a 22 semiconductor crossbar switch. This type of memory is superior to semiconductor memories in operating speed, the number of logic gates, power dissipation, and so on. We have also developed narrow and low-loss YBCO coplanar transmission lines for use in these reentrant delay line memories. Etch-back planarization and a patterning process combining Ar-ion milling and wet-etching enabled us to fabricate 18-cm-long YBCO coplanar transmission lines as narrow as 5 µm, and these lines did not suffer from electrical shorts even when the spacing was only 2. 5 µm. The surface resistances calculated from the attenuation constants of 5-, 10-, and 25-µm-wide lines provide similar low values of 0. 18-0. 26 mΩ at 10 GHz and 55 K. This indicates that the process damage was sufficiently suppressed despite the narrow line widths. The 5-µm-wide line attained a low attenuation constant of 2. 7 dB/m, which is similar to that in Cu coaxial cables. Even in the 5-µm-wide line, no significant increase in transmission loss was observed up to an input power level of 16 mW at 10 GHz and 55 K. This input power is comparable to that required to propagate digital signals from semiconductor circuits. Therefore high-speed digital signals can propagate through these narrow YBCO coplanar lines without significant attenuation of the signal pulses. Thus, these narrow YBCO coplanar lines can be used in the reentrant delay line memories.

2-pole band-pass filters (BPFs) with tap-excitation are prepared by using high temperature superconductors (HTS). The possibility of realizing superconducting coplanar filters with attenuation poles is revealed.

The electric field intensity of the THz radiation from YBCO thin films excited by ultrashort laser pulses has been enhanced by a factor of 3 using a-axis oriented films instead of c-axis oriented ones used previously under the same excitation conditions. This corresponds to the enhancement of a factor of 10 for the radiation power. From the transmittance measurements of the millimeter wave for a-and c-axis oriented films, the origin of the enhancement is attributed to the increased fraction of the THz electromagnetic wave power transmitted from the YBCO film to free space. This result indicates that the utilization of the anisotropic properties of high-Tc superconductors is effective to enhance the radiation power.

New THz radiation devices made of high-Tc superconductors are fabricated and their characteristics are studied in detail. Ultrashort electromagnetic pulses with 0.5 ps width have been radiated into free space from current biased devices made of superconducting YBa2Cu3O7 (YBCO) films by exciting with femtosecond laser pulses. The Fourier spectrum of them extends up to 3 THz. The radiation mechanism is ascribed to the ultrafast supercurrent modulation by the optical pulses. The THz waveform is analyzed using rate equations describing the relaxation of photoexcited quasiparticles. By the improvement of the device structure and the collecting optics, the radiation power can be increased up to 0.5 µW. A new type THz radiation from YBCO films under an external magnetic field without a transport current is also reported.

The capacitance and the resistance of the Au/PrBa2Cu3Oy (PBCO)/YBa2Cu3Ox (YBCO) structure were measured at liquid helium temperature. A film of YBCO was deposited by rf magnetron sputtering at 700, and its thickness was 250 nm. A film of PBCO was deposited by rf magnetron sputtering at 690, and its thickness was less than 375 nm. The inverse capacitance and the resistance of the structure increased with PBCO thickness when PBCO thickness was more than 70 nm. However, the inverse capacitance was near zero, and the resistance was much less than that of PBCO itself when PBCO thickness was less than 70 nm. These results show the possibility that the electric property of PBCO within 70 nm from the PBCO/YBCO interface is different from that of PBCO itself, that is, there is a low-resistance region in PBCO near the YBCO/PBCO interface.

Amorphous films of YBCO and BSCCO (2212) sputtered on MgO substrate were crystallized using zonemelt technique. For YBCO films, thin Ag intermediate layer was found to be effective in enhancing crystal growth and preferred orientation. Zone-melted BSCCO films included both (2201) phase and Cu(Sr, Ca)O2 in a form of dendritic crystallites. Tc's obtained for YBCO and BSCCO films were 70 and 75 K, respectively.

A sputtering system using dc hollow cathode discharge was developed for the propose of high Tc superconducting devices. Using this system, as-grown superconducting thin films of YBCO have been formed on MgO and SrTiO3 substrates. Influence of the sputtering conditions such as the substrate temperature and discharge gas pressure on the Tc and lattice parameter was investigated. It was found that superconducting films on MgO with Tczero higher than 87 K ere routinely obtained at the pressure of 820 mTorr (5%O2) and substrate temperature of 700 during deposition. The a/b-axis and c-axis oriented YBCO-PBCO hetero-structures were also successfully formed on MgO and SrTiO3 substrates.

Thin-film YBCO Josephson junctions were successfully fabricated by a pulsed excimer laser ablation, and the mixing experiments in the microwave region (820 GHz) were carried out at the temperature of 77 K. The IF output maximum was obtained at the bias voltage midway between the zero and the first Shapiro steps for the fundamental mixing. For the 2nd harmocic mixing, the IF output maximum was obtained at a zero bias voltage, and the conversion efficiency was -14 dB at the microwave frequency of 18 GHz. These results strongly suggest that the fabricated thin-film Josephson junctions work well at the temperature of 77 K as detectors and mixers in the microwave regions (820 GHz).