As CMOS devices scaling down in nowadays integrated circuits, the impact of layout-dependent effects (LDEs) to circuit performances becomes to be significant. This paper mainly focuses on LDE-aware analog circuit synthesis. Our circuit synthesis follows an optimization framework of transistor sizing based on geometric programming (GP) in which analog circuit performances are formulated in terms of monomials and posynomials. Providing GP models for the LDEs such as the shallow trench isolation (STI) stress and the well proximity effect (WPE), we can generate layout constraints related to LDEs during the circuit synthesis. Applying our circuit synthesis to a typical two-stage op-amp, we showed that the resultant circuit, which generated by GP with circuit performance and layout constraints, satisfied all the specifications with the verification of HSPICE simulation based on the BSIM model with LDE options.

A four-quadrant-input linear transconductor generating a product or a product sum current is proposed. The proposed circuit eliminates the influence of channel length modulation and expands a dynamic input voltage range. As an application of the proposed circuit, the four-quadrant analog multiplier is designed. The four-quadrant analog multiplier consists of the proposed circuit, an input circuit and a class AB current buffer. HSPICE simulation results with 0.35 µm n-well single CMOS process parameter are shown in order to evaluate the proposed circuit.

In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.

A linear voltage-to-current convertor without current mirror circuit is proposed for low distortion applications employing short channel MOSFET's. Twin current sources and current sinks pair of MOSFET's having the same drain-source voltage are employed for a substitute of the current mirror circuits, in order to eliminate the channel length modulation factor of the short channel MOSFET's. HSPICE simulation is shown in order to evaluate the proposed circuits. As an application, a low distortion OTA is realized by employing the proposed linear voltage-to-current convertor with short channel MOSFET's.

A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the dependence of external resistance on Vg is taken into account, and it is not necessary to extract Vth. It is found that the external resistance can be approximated as the linear function of Vg with Vg around Vth. For a 0.4 µm gate length LDD MOSFET, the accuracy and resolution are estimated to be less than 0.02 µm and 0.003 µm, respectively.

A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.