A dielectric rod waveguide applicator for microwave heating such as microwave hyperthermia is described. The applicator consists of the acrylic cylinder filled with deionized water. By circulating the deionized water, the dielectric rod waveguide applicator acts as a surface cooling device, so that it doesn't need any bolus. This surface cooling device enables the dielectric rod waveguide applicator to control the site of effective heating region along the depth axis. Useful pattern of the circular or spheroidal shape and axially symmetric effective heating region were obtained. Furthermore metal strips provided on the aperture of applicator control the shape of the heating pattern.

Two kinds of nitrided ultrathin (510 nm) SiO2 films were formed on the silicon (100) face using rapid thermal NH3-nitridation (RTN) and rapid thermal N2O-oxynitridation (RTON) technologies. The MOS capacitors with RTN SiO2 film showed that by Fowler-Nordheim (F-N) electron injection, both electron trap density and low-field leakage increase by the NH3-nitridation. In addition, the charge-to-breakdown (QBD) value decreases owing to NH3-nitridation. By contrast, RTON SiO2 films exhibited extremely low electron trap density, almost no increase of the leakage current, and large QBD value above 200C/cm2. The oxide film composition was evaluated by secondary ion mass spectroscopy (SIMS). The chemical bonding states were also examined by Fourier transform-infrared reflection attenuated total reflectance (FT-IR ATR) and X-ray photoelectron spectroscopy (XPS) measurements. These results indicate that although a large number of nitrogen (N) atoms are incorporated by the RTN and RTON, only the RTN process generates the hydrogen-related species such as NH and SiH bounds in the film, whereas the RTON film indicates only SiN bonds in bulk SiO2. From the dielectric and physical properties of the oxide films, it is considered that the oxide wearout by high-field stress is the result of the electron trapping process, in which anomalous leakage due to trap-assisted tunneling near the injected interface rapidly increases, leading to irreversible oxide failure.

Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.

Ac resistivity and power loss values for Mn-Zn ferrite material have been investigated by electrical and magnetic measurements. The ac resistivity shows an inductive dependency on frequency for the low dc resistive samples or for highly dc resistive ones at high temperature, while a capacitive dependency on frequency was observed for the highly resistive materials at the room temperature. These phenomena were interpreted by the dependence of ac resistivity on the dc resistivity, complex permeability and complex permittivity. The dependency of the power losses on the dc resistivity, temperature and frequence were also examined with analysis of power loss term. Dividing the power loss into hysteresis loss and eddy current loss, the frequency dependence of the eddy current loss was found to vary with the magnitude of the dc resistivity as follows: The eddy current loss of low dc resistive materials depends on the dc resistivity. On the other hand, the eddy current loss for high resistive materials is determined by the ac resistivity, contributed from dielectric loss.

The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO2 film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.

A Chebyshev type bandpass filter using four TM01δ-mode dielectric rod resonators oriented axially in a high-Tc superconductor cylinder is designed with 3 dB bandwidth 36 MHz at 11.958 GHz. The single resonator which contains a Ba (MgTa) O3 ceramic rod of εγ=24 and a YBa2Cu3Oy bulk cylinder is designed to realize temperature coefficient of f0, τf=0 ppm/K at 20 K. The unloaded Q, Qu measured at 20 K is 150,000 which is higher than Qu=100,000 for a TM01δ-mode resonator with a copper cylinder. When the constructed filter is cooled from room temperature to below 50 K, the center frequency shifted only 5 MHz which corresponds to τf=1.5 ppm/K and the insertion loss IL0 at the center freqency reduced from 3.0 dB to about 0 dB, the designed value of which is 0.04 dB, which is too small to be measured accurately.

Novel, very small-size multilayer MMIC's using miniature microstrip lines on a thin dielectric film, as well as the features of the multilayer structure, are presented. Very narrow-width thin-film transmission lines, meander-like configurations, line crossovers, and vertical connections, which are effective for significant chip-size reduction and flexible layout, are realized and utilized in a 2.5-3 µmN-layer dielectric film structure. 180-degree and 90-degree hybrids and umltiport Wilkinson dividers, which are implemented in small areas of 0.1 mm2 and 1.7 mm2, are presented. Furthermore, layout flexibility in the multilayer structure is demonstrated by implementing distributed amplifiers into the layers.

Transient responses by a dielectric sphere have been analyzed here for a dipole source located at the center. The formulation has been constructed first in the frequency domain, then transformed into the time domain to obtain for an impulsive response by two analytical methods, namely the Singularity Expansion Method and the Wavefront Expansion Method. While the former method collects the contributions around the singularities in the complex frequency domain, the latter gives us a result which is a summation of each successive wavefront arrivals. A Gaussian pulse has been introduced to simulate an impulse response result. The Gaussian pulse response is analytically formulated by convolving Gaussian pulse with the corresponding impulse response. Numercal inversion results are also calculated by Fast Fourier Transform Algorithm. Numerical examples are shown here to compare the results obtained by these three methods and good agreement are obtained between them. Comments are often made in connection with the corresponding two dimensional cylindrical case.