We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.

Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embedded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15 kA/cm2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si3N4 grating within the p-type material.

The features of the method of moment (MoM) and the finite difference time domain (FDTD) method for numerical analysis of the electromagnetic scattering problem are presented. First, the integral equations for the conducting wire, conducting plane and the dielectric materials are described. Importance to ensure the condition of the continuity of the current of the scatterers is emphasized and numerical examples for a conducting structure involving a junction of wire segment and planar segment is presented. Finally, the advantages and the disadvantages of the FDTD method are discussed.

The Finite-Difference Time-Domain (FDTD) method has been applied to study the scattering characteristics of Fabry-Perot cavities with infinite planar periodic surfaces. Periodic Boundary Conditions (PBC) are used to reduce the analysis to one unit periodic volume. Both dielectric and metallic losses are included in the algorithm using a frequency dependent formalism. This technique is used to study the frequency response of plane parallel Fabry-Perot cavities with square aperture metal mesh mirrors. These cavities are assumed to be illuminated by a normally incident plane wave. After a detailed description of the algorithm, we show theoretically the separate effects of dielectric and metal losses on the transmission coefficient of such cavities. We compare also simulation results to measurements, in the 60 GHz band, of resonant frequencies and Q factors of cavities with various mesh parameters.

In this paper, a novel design method for bandpass filter with attenuation poles (BAP) is presented. The changed inverter element values due to inserting either capacitors or inductors can be optimized using the linear relationship between inverter element values of a conventional bandpass filter (BPF) and those of the BAP using the Touchstone program. A 1800-1825 MHz bandpass filter with attenuation poles for duplexers is designed and fabricated using coaxial dielectric resonators. The validity of this design approach is demonstrated by a computer simulation. The resonators are simulated equivalently as shorted lossy transmission lines. The measured results of center frequency, bandwidth, and attenuation pole frequencies closely agree with the design values.

A novel method is proposed to calculate the distributed coupling of dual-modes in a circular resonator. New theoretical expressions are devised to accumulate the infinitesimal coupling between orthogonal modes and their validity is justified by the FD-TD analysis and experiments. The distributed coupling concept of a circular disk resonator is applied to a square disk resonator to calculate its resonant frequency. We have fabricated two types of low-profile dual-mode square dielectric disk resonator BPF, using high dielectric constant material (εr = 93) having a dimension of 5 mm 5 mm 1 mm. The filter characteristics are explained by the transmission line circuit model.

Resonant coupling type microstrip line interconnects using a bonding ribbon and dielectric pad have been designed and fabricated. The basic concept of this interconnect is the LC serial resonance of the pad capacitor and ribbon inductor. Both numerical simulation and experiment reveal low return loss and high efficiency connection at the predicted resonant frequency region, which can be readily shifted to higher frequencies by tuning the structural parameters. Improvement in bandwidth of the interconnect is demonstrated by using a pad with higher dielectric constant. Furthermore, it is also shown that a slight modification allows DC connection in addition to efficient coupling at the resonant frequency.

A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.

In this paper, we analyze the inverse scattering problem by a new deterministic method called "Source and Radiation Field Solution," which has the merit that both the source and the radiation field can be treated at the same time, the effect of which has already shown in ordinary scattering problems.

In order to enhance the energy transfer efficiency in a Cherenkov laser, we propose to use a tapered waveguide with a dielectric thickness properly varied stepwise in the longitudinal direction. With the aid of particle simulation, we investigate the nonlinear characteristics of the Cherenkov laser with the tapered waveguide, demonstrating the effectiveness of our proposal for efficiency enhancement.

In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr2Nb2O7 (SNO) and Sr2(Ta1-xNbx)2O7 (STNO) were prepared by the sol-gel method on Pt/IrO2 electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm2 and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.

The post-annealing process has been investigated for (Ba, Sr)TiO3 [BST] thin films employed as a capacitor dielectric in 1 Gbit dynamic random access memories (DRAMs). The effects of post-annealing on morphology, crystallinity, and dielectric properties were examined for thin film capacitors with BST prepared on Pt electrodes by liquid source chemical vapor deposition (CVD). The direct annealing of BST capacitors caused a roughening in surface morphology of the upper Pt electrodes and BST films. However, the post-annealing of capacitors with a silicon dioxide passivation layer was found to cause little change in surface morphology of Pt and BST, and also no significant deterioration in leakage current. The improvement in crystallinity of BST films through post-annealing was confirmed at a temperature in the range 700-850 by X-ray diffraction (XRD) and transmission electron microscope (TEM). Moreover, the post-annealing experiments for BST films with different compositions showed that the post-annealing greatly increases the dielectric constant of BST films having approximately stoichiometric composition. The leakage and breakdown properties of BST films were also examined, indicating that excess Ti ions result in an increase of the turn-on voltage and the breakdown time. Based on these investigations, the electrical properties of dielectric constant ε 260, equivalent silicon dioxide thickness teq 0. 44 nm, and leakage current JL110-7 A/cm2 at 1. 9 V were successfully obtained for stoichiometric 30-nm-thick BST films post-annealed at 750. Hence, it can be concluded that the post-annealing is a promising technique to enhance the applicability of CVD-deposited BST films with conformal coverage to memory cell capacitors of 1 Gbit DRAMs.

To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x 0. 32) showed ferroelectricity at room temperature. The maximum value of remanent polarization of 2Pr = 0. 38 C/m2 was obtained at the composition of x = 0. 70 in this study.

We have constructed Bi based layer structured ferroelectric films and their superlattices by a pulsed laser deposition technique. The dielectric constants along c-axis increase with increasing of the number of pseudo-perovskite layers between double Bi2O2 layers. Ferroelectricity appears along the c-axis direction only for the odd number of the perovskite layers owing to the mirror symmetry in a crystal structure. Especially, the Bi2VO5. 5 film shows an atomically flat surface, low dielectric constant of 30 and ferroelectricity of Pr=3 µC/cm2 and Ec=16 kV/cm, respectively. This material is expected to the application for FRAMs.

Arc and contact resistance characteristics of Ag and Pd contacts were determined in several kinds of dielectric liquids, such as distilled water, methanol and n-hexane, under the inductive load condition. The experimental results showed that arc discharge types are dependent on dielectric liquids. A steady arc develops in air under this test condition. However, it was found that not the steady arc but the showering arc occurs in distilled water and methanol at a low load current. It was demonstrated that this phenomenon is caused by the high capacitance generated by the ambient dielectric liquid. Also, in almost all cases, the contact resistance behavior in dielectric liquids is satisfactory because metal spots remain on the contact surface. However, in n-hexane, the contact resistance tends to deteriorate, particularly for the Ag contact, with increasing load current. It seems that the deterioration of contact resistance is caused by carbon included in n-hexane.

We present a finite-difference time-domain (FD-TD) method with the perfectly matched layers (PMLs) absorbing boundary condition (ABC) based on the multidimensional wave digital filters (MD-WDFs) for discrete-time modelling of Maxwell's equations and show its effectiveness. First we propose modified forms of the Maxwell's equations in the PMLs and its MD-WDFs' representation by using the current-controlled voltage sources. In order to estimate the lower bound of numerical errors which come from the discretization of the Maxwell's equations, we examine the numerical dispersion relation and show the advantage of the FD-TD method based on the MD-WDFs over the Yee algorithm. Simultaneously, we estimate numerical errors in practical problems as a function of grid cell size and show that the MD-WDFs can obtain highly accurate numerical solutions in comparison with the Yee algorithm. Then we analyze several typical dielectric optical waveguide problems such as the tapered waveguide and the grating filter, and confirm that the FD-TD method based on the MD-WDFs can also treat radiation and reflection phenomena, which commonly done using the Yee algorithm.

In this paper an algorithm for numerical investigation of the transmission line having a generalized polygonal cross-section and open interface is proposed. Solution of the eigenmode problem is based on the method called the domain product technique, which employs a Mathieu function expansion and provides an efficient technique to the analysis of the structures with multiangular boundaries. An agreement at the obtained numerical results with existing data confirms the applicability of the theoretical analysis given in the paper.

This paper describes a nondestructive measurement method for complex permittivity of dielectric plates at 2 GHz, using a cylindrical cavity resonator. The resonator is divided into two parts at the center. Two dielectric plates are symmetrically loaded around the center of the cavity. These plates have high permittivity of 45. A dielectric plate specimen is clamped with these halves. The values of relative permittivity ε and loss tangent tanδ of the specimen are obtained from the resonant frequency and unloaded Q-value of TE011 mode. Measured results of various materials are compared with those values obtained at 3 and 10 GHz by other cavity resonator method. An edge effect is taken into account by a reference method, using measurement data of a sapphire plate. The errors of the present method are smaller than 1% and 2-310-5 for ε and tanδ, respectively.

This paper describes influence of the relaxation current in BaxSr(1-x)TiO3 (BST) thin films on dynamic random access memory (DRAM) operation. The relaxation current is a transient content of dielectric leakage currents. In BST thin films (expected to be a cell capacitor dielectric in 256 Mb DRAM and beyond), the relaxation current often displays the power law behavior I(t)t-1. This leads to the singularity near the time zero. When one attempts to evaluate precisely the influence of this leakage on DRAM operation, the behavior should be estimated on a time-dependent bias. However, such a singular behavior makes analysis based on a linear response difficult. In this analysis, we start by assuming that the behavior of the relaxation current can be modeled as a linear equivalent circuit. We also assume that the relaxation current follows the power law, I(t)t-1 for 1 ns

The applicability of a boundary matching technique is presented for reconstructing the refractive-index profile of a circularly symmetric cylinder from the measurement of the scattered wave when the cylinder is illuminated by an H-polarized plane wave. The algorithm of reconstruction is based on an iterative procedure of matching the scattered wave calculated from a certain refractive-index distribution with the measured scattered-wave. The limits of reconstruction for strongly inhomogeneous lossless and lossy cylinders are numerically shown through computer simulations under noisy environment, and are compared with those in the E-wave case.