In this paper a newly designed internally-coupled asymmetric stepped-impedance resonator (SIR) bandpass filter (BPF) is proposed. The asymmetric SIR structure not only can effectively reduce the circuit size but also can provide two flexibly tunable transmission zeros near the lower and upper passband edges. The first transmission zero is due to the series resonance of the quarter-wavelength open stepped-impedance stub, and the second one is produced by anti-parallel coupling between adjacent SIRs. The proposed BPF was fabricated and simulated using the commercial software HFSS, and agreement between the measured and simulated results was observed. A 0.9-dB insertion loss and a shape factor of 3.6 were achieved in the passband, thus indicating that the proposed filter structure is of practical value.

A novel class of microstrip bandpass filter is configured using the impedance transformers and an improved stepped impedance resonator (SIR). This SIR is composed of a central narrow strip section with an aperture on ground and two wide strip sections at the two sides. This low-high-low SIR resonator has a promising capability in achieving an extremely large ratio of first two resonant frequencies for design of a bandpass filter with ultra-broad stopband. The two quarter-wavelength transformers with low and high impedances, referred as to impedance- and admittance-inverters, are modeled and utilized as alternative types of inductive and capacitive coupling elements with highly tightened degrees for wideband filter design. After extensive investigation is made on the two transformers and the proposed SIR, the two novel bandpass filters are constructed, designed and implemented. Two sets of predicted and measured frequency responses over a wide frequency range both quantitatively exhibit their several attractive features, such as ultra-broad stopband with deep rejection and broadened dominant passband with low insertion loss.

Novel microstrip dual-band bandpass filters with controllable fractional bandwidths and good in-between isolation are presented and implemented. A half-wavelength stepped-impedance resonator is firstly characterized, aiming at producing the two resonant frequencies at 2.4 and 5.2 GHz. Two types of coupled microstrip lines in the parallel and anti-parallel formats are then investigated in terms of unified equivalent J-inverter network. Extensive results are derived to quantitatively show their distinctive frequency-distributed coupling performances under different coupling lengths. The coupling degrees of these two coupled lines at the two resonances are properly adjusted to achieve the dual-passband response with varied or tunable bandwidths. In addition, the parallel coupled line is modeled to bring out a transmission zero between the two resonances so as to achieve the good in-between isolation. The three two-stage bandpass filters are initially designed to exhibit their dual-band response with changeable dual-band bandwidths. A three-stage dual-band filter is in final optimally designed and its predicted performance is confirmed in experiment.

This study is devoted to a half-wave dipole with a conductor plane at a distance much smaller than a quarter wavelength which we designate as an ultra low profile dipole (ULPD) antenna in this paper. The concerns of ULPD antenna are the feeding method and the impedance matching, because the input impedance usually tends to be lowered by the existence of a metallic structure in its proximity. In this paper, we propose a ULPD antenna with an excellent impedance matching and a coaxial feed built within the antenna structure so that the external matching and a balun are not required. A coaxial cable is used as a feed line and extended to be a half of a half wavelength dipole. The other half is made up of a parasitic element, which is connected to the outer conductor of the coaxial radiator. To make a matching, the outer conductor of the coaxial radiator is stripped off at a suitable length, and the total length of a dipole is considered for its resonance at a desired frequency of 2 GHz. The experiment has been conducted. The results show the return loss of -27 dB and the maximum gain of 9 dBi in the normal direction to the conductor plane. The computational results are also obtained, which agree well with the experimental results.

A dielectric resonator with a gap between the top plate and the rest has been useful for measuring the penetration depth (λ) of superconductor films, a parameter essential for obtaining the intrinsic microwave surface resistance (Rs) of thin superconductor films. We investigated effects of a gap on the microwave properties of TE0ml-mode sapphire resonators with a gap between the top plate and the rest of the resonator. Regardless of a 10 µm-gap in TE0ml-mode sapphire resonators, variations of the TE0ml-mode resonant frequency on temperature (Δf0) as well as TE0ml-mode unloaded Q remained almost the same due to lack of axial currents inside the resonator and negligible radiation effects. The λ of YBa2Cu3O7-δ (YBCO) films obtained from a fit to the temperature-dependent Δf0 appeared to be 195 nm at 0 K and 19.3 GHz, which was well compared with the corresponding value of 193 nm at 10 kHz measured by the mutual inductance method. The intrinsic Rs of YBCO films on the order of 1 mΩ, and the tan δ of sapphire on the order of 10-8 at 15 K and 40 GHz could be measured simultaneously using sapphire resonators with a 10 µm-gap.

Extending the domain of the vector potential in the so-called Hallen's equation, four unknown constants are determined to satisfy the boundary conditions in the same way as the circuit theory, where the vector potential plays the leading role, from which the current density and the current itself are derived. Vanishing of the current density just outside the ends of the antenna is required. For a tube-shaped antenna with walls of infinitesimal thickness, further the current just inside the ends of the antenna should vanish, as a result, the current distribution becomes sinusoidal. Adoption of either the surface current distribution or axial current distribution incurs a crucial effect on the value of the currents calculated from the vector potential. The numerical results of the radiation impedance of a hslf-wave antenna show a tendency of consistency with that relatively newly obtained by employing the exact kernel. The problem on the nonsolvability of Hallen's equation is cleared up. Comments are given on the moment method in relation to the boundary value problems to recommend to add two more undecided constants to Hallen's equation.

This paper proposes a non-destructive dielectric measurement method for a solid lossy dielectric material with sufficiently large dimensions compared to the wavelength. The proposed non-destructive measurement method employs an open-ended waveguide infilled with a low-loss dielectric material at the end of the waveguide. A numerical model of the open-ended waveguide attached to the surface of a solid dielectric material is simulated using the FDTD method. The reflection coefficient is calculated while the complex permittivity of the solid lossy dielectric material is varied. A permittivity estimation chart representing the relationship between the complex permittivity and the reflection coefficient is derived at 2 GHz. The measured reflection coefficient is plotted on the permittivity estimation chart. The chart indicates that the reflection coefficient varies drastically according to the variation in the complex permittivity of the solid dielectric material if a low-loss dielectric material is used. As a result, it became possible to estimate the complex permittivity of the solid lossy dielectric material by measuring the reflective coefficient. The estimated complex permittivity using the proposed method is comparable to the measured complex permittivity using the S-parameter method employing a coaxial line.

An inverse scattering problem of estimating the surface impedance for an inhomogeneous half-space is investigated. By virtue of the fact that the far field representation contains the spectral function of the scattered field, complex values of the function are estimated from a set of absolute values of the far field. An approximate function for the spectral function is reconstructed from the estimated complex values by the least-squares sense. The surface impedance is estimated through calculating the field on the surface of the half-space expressed by the inverse Fourier transform. Numerical examples are given and the accuracy of the estimation is discussed.

Generalized impedance boundary conditions are employed to simulate the effects of the parallel-stratified media on electromagnetic fields. Sommerfeld type integral contained in Hertz potential is expressed as the sum of two parts: zeroth order Hankel function and an absolutely convergent series expansion of spherical Hankel functions.

Frequency-domain and time-domain novel uniform asymptotic solutions for the scattered fields by an impedance cylinder and a dielectric cylinder, with a radius of curvature sufficiently larger than the wavelength, are presented in this paper. The frequency-domain novel extended UTD and the modified UTD solutions, derived by retaining the higher-order terms in the integrals for the scattered fields, may be applied in the deep shadow region in which the conventional UTD solutions produce the substantial errors. The novel time-domain uniform asymptotic solutions are derived by applying the saddle point technique in evaluating the inverse Fourier transform. We have confirmed the accuracy and validity of the uniform asymptotic solutions both in the frequency-domain and in the time-domain by comparing those solutions with the reference solutions calculated from the eigenfunction expansion (frequency-domain) and from the hybrid eigenfunction expansion and fast Fourier transform (FFT) method (time-domain).

A novel microstrip dual-mode bandpass filter with ultra-broad stopband is proposed using the aperture-backed stepped-impedance ring resonator (SIRR). This SIRR consists of low-impedance strips in the four bended corners and high-impedance strips in the four straight sides. With the cross-shaped aperture placed on the ground underneath the SIRR, the upper stopband is significantly broadened. In particular, the 2nd resonant frequency of this proposed SIRR is confirmed to exceed the four times of its 1st counterpart. The dual-mode filter with the passband of 7.5% at 1.59 GHz is then designed and implemented, demonstrating the measured stopband of 1.70-5.80 GHz and size reduction of 56.0%.

It is known that the thickness of the λ/4 type EM wave absorber having a resistive film with the capacitive reactance is thinner than 1/4 wavelength. This paper investigates EM wave absorbers using the resistive film with capacitive reactance. We introduced the impedance into the resistive film, and then clarified the relationship between the impedance and the matching thickness in the single layer EM wave absorber. Practically, we carried out to grasp the impedance of the resistive films, which were prepared using the conductive flake powder. As the results, we have proven that the matching thickness in the single layer EM wave absorber could be realized 0.17 λ-0.09 λ in the frequency range from 2 GHz to 8 GHz by using these resistive films. We also fabricated the single resistive layer and the double resistive layers EM wave absorber using these resistive films for Dedicated Short Range Communications (DSRC) and wireless Local Area Network (LAN), in which the matching thickness could be reduced to 45% and 30%, respectively, as compared with the each absorber using the non-capacitive reactance.

The power line communication (PLC) system should be investigated with respect to the influence on electromagnetic environments. Longitudinal conversion loss (LCL) and input impedance are important parameters for evaluating the influence because they are closely related to the radiated, conducted, and inducted emission. An indoor AC mains system consisting of electrical equipment and an AC mains line was modeled by four-port networks, and the LCL and the input impedance were calculated. The parameters of the four-port networks were determined from theory and measurement. The analytical model was examined using a simple network and the results show that the calculated values agreed with the measured ones. The LCL and the input impedance were investigated at the AC mains port in some existing buildings, and the measured results almost agreed with the calculated results derived from the indoor AC mains system model.

The radio-frequency protection guideline of Japan recommend the limits of contact current for contact hazard due to an ungrounded metallic object under an electromagnetic field in the frequency range from 10 kHz to 15 MHz. To arrange the standard measurement methods of contact current in Japan, the contact body impedance for the Japanese in the frequency range from 75 kHz to 15 MHz is obtained, and the simplified equivalent circuit is determined using nonlinear least squares method. In addition, the human body impedance is obtained from numerical simulation using the impedance method and voxel human model, and compared it with measured one.

This paper describes a digital impedance controller (DIC) [1] for high-speed signal interface. The proposed DIC provides the wide range impedance control covering from 23 Ω to 140 Ω with 3.29% maximum quantization error. The maximum quantization error of the proposed DIC is 2.26% with RQ ranging from 23 Ω to 53 Ω, the same range covered by conventional scheme. The high resolution and wide range impedance control is implemented by using automatic gate voltage optimization. The amount of jitter caused by quantization error is 6.9 ps while 13.8 ps in conventional scheme. The data input valid window is 623 ps at 0.75200 mV and maximum eye open is 641 mV meaning about 10% improvement at 1.5 Gbps/pin DDR3 SRAM interface.

For a highly nonlinear circuit design such as an active frequency multiplier, performing an input impedance "match" is not a straightforward problem. In this work, an analysis of nonlinear input impedance matching in active microwave frequency multipliers is presented. By utilizing harmonic balance simulation of an idealized device model, fundamental aspects of performing an input "match" are explored for classical frequency doubler and frequency tripler configurations. The analysis is then repeated using a realistic device model, verifying the efficacy of using nonlinear input impedance matching to improve the output power and return loss characteristics of a multiplier.

This paper presents a novel method of designing microstrip line multi-frequencies band filters by applying the SIR (stepped impedance resonators) technology. Utilizing the S-parameter and the ABCD parameters of a two-port network is for the analysis of short-circuited and open-circuited resonators with various combinations of series and shunt sequences. By controlling the impedance ratio of the resonators, both center frequencies of the two passbands then are determined. Moreover, a global synthesis approach is also discussed on miniaturization. A simplified architecture based on bent SIR offers the 50% area reduction of layout. Technology of matching circuit creates higher performance multi-band filter. We adjust impedance and electrical length of transmission line (TL) to compensate multi-band and bending for matches and highly improve the insertion and reflection loss. Simulation and measurement are performed to validate our method and are pretty matched.

A simple high-speed low input impedance CMOS current comparator is presented. The circuit uses improved Wilson current-mirror to perform subtraction. Negative feedback is employed to reduce the input impedance of the circuit. HSPICE is used to verify the circuit performance with standard 0.5 µm CMOS technology. Simulation results demonstrate propagation delay of 1.02 ns, average power consumption of 0.9 mW, and input impedance of 137 Ω for 0.1 µA input current at the supply voltage of 3 V.

The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.

The electric currents on the upper, lower and side surfaces of the patch conductor in a circular microstrip antenna are calculated by using the integral equation method and the characteristic between the electric currents on the upper and lower surfaces is compared. The integral equation is derived from the boundary condition that the tangential component of the total electric field due to the electric currents on the upper, lower and side surfaces of the patch conductor vanishes on the upper, lower and side surfaces of the patch conductor. The electric fields are derived by using Green's functions in a layered medium due to a horizontal and a vertical electric dipole on those surfaces. The result of numerical calculation shows that the electric current on the lower surface is much bigger than that on the upper surface and the input impedance of microstrip antenna depends on the electric current on the lower surface.