Low-profile, miniaturized and highly efficient power inverters are required to light up backlights, which include cold cathode fluorescent lamps (CCFLs), in color liquid crystal displays (LCDs), replacing conventional power inverters with electromagnetic transformers. The object of this study is to actualize a power inverter to which a novel multilayered piezoelectric ceramic transformer operating in the third order longitudinal mode is applied. The piezoelectric transformer has a symmetrical structure in the lengthwise direction and its generating part operates in a piezoelectric stiffened mode in order to increase both energy conversion efficiency and power density. This transformer has great advantages. Namely, all the electronic terminals in this transformer can be connected at the vibration nodes of the transformer, which contributes to the guarantee of stable transformer performances at high power operation, and this transformer is superior in impedance matching against the backlight load at steady state, because the output impedance of this transformer is much lower than that of conventional Rosen type transformers. Then a power inverter with the transformer was fabricated. In this power inverter, a separately excited oscillation circuit was adopted to drive the transformer with high efficiency, and the transformer drive frequency was controlled by detecting the backlight current in order to adjust the backlight luminance properly. As a result, the fabricated power inverter exhibited more than 90% overall efficiency and 4. 5-W output power, which is enough power to light up a 9. 4 inch color LCD, including the stray capacitance loss resulting from CCFL mounting. The luminance value on a light transmission plate of the backlight was more than 2000 cd/m2.

A technique for generating the standard EM fields with arbitrary wave impedance at the center of a TEM cell is proposed in this letter. We can realize the experimental system and obtain the measured results to agree well with the calculated results. This technique is useful for the EMS test and the calibration of EM probe because the wave impedance can be easily adjusted only with step attenuator.

A more judicious choice of trial functions to implement the Improved Circuit Theory (ICT) application to multi-element antennas is achieved. These new trial functions, based on Tai's modified variational implementation for single element antennas, leads to an ICT implementation applicable to much longer co-planar dipole arrays. The accuracy of the generalized impedance formulas is in good agreement with the method of moments. Moreover, all these generalized formulas including the radiation pattern expressions are all in closed-form. This leads to an ICT implementation which still requires much shorter CPU time and lesser computer storage compared to method of moments. Thus, for co-planar dipole arrays, the proposed implementation presents a relatively very efficient method and would therefore be found useful in applications such as CAD/CAE systems.

A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency fL and a higher frequency fH) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at fH, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at fH to inductive at fL. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as (fH-fL), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S21|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.

It is shown that a three-fluid model, which was successfully introduced to explain microwave characteristics of high-Tc superconductors phenomenologically, is suit also to explain those of low-Tc superconductors. In this model, the two contributions of a residual normal electron, in addition to a super and a normal electron in the two-fluid model, and of the temperature (T) dependence of momentum relaxation time τ for the two normal electrons are taken into account. Measured results of the T dependence of surface resistance Rs for a Nb film with critical temperature Tc9.2K agree very well with an Rs curve calculated using the present model, where a residual surface resistance at T0K, Rso, and the T dependence of τ were determined using the surface reactance at 0K Xso37.6mΩ calculated using the BCS theory to fit a calculated Rs curve with the measured values as a function of T. Furthermore, microwave characteristics predicted from the BCS theory cannot be explained phenomenologically using the conventional two-fluid model. This difficulty can be solved by using an improved two-fluid model, called the two-fluid (τ) model, where the T dependence of τ is taken into account. Finally the frequency dependence of Rs calculated for the Nb film is f1.9 for the BCS theory and f2.0 for the three-fluid (τ) model on the assumption of the frequency independence of τ.

The key concept of Physical Optics (PO), originally developed for a perfectly electric conductor (PEC), consists in that the high frequency fields on the scatterer surface are approximated by those which would exist on the infinite flat surface tangent to the scatterer. The scattered fields at arbitrary observation points are then calculated by integrating these fields on the scatterer. This general concept can be extended to arbitrary impedance surfaces. The asymptotic evaluation of this surface integration in terms of diffraction coefficients gives us the fields in analytical forms. In this paper, uniform PO diffraction coefficients for the impedance surfaces are presented and their high accuracy is verified numerically. These coefficients are providing us with the tool for the mechanism extraction of various high frequency methods such as aperture field integration method and Kirchhoff's method.

The valid region for the application of the conventional Improved Circuit Theory (ICT) in the analysis of wire antennas is established. To further extend the application of ICT to the analysis of much longer antennas, Tai's trial function is used to derive new formulas for the impedance matrix. Unlike the conventional ICT trial function, Tai's trial functions lead to input impedances which are finite irrespective of antenna length. Results of the new ICT impedance formulas are comparable in accuracy with the general method of moments. Moreover, since all the elements of the new formula have been expressed in closed-form, the resulting ICT algorithm is still superior in terms of computer running time with lesser storage requirement compared to other conventional methods like method of moments. This would enhance ICT applications in CAD/CAE systems.

An extended configuration of a stepped impedance comb-line filter is presented. The parallel stripline sections of stepped impedance resonators are coupled electromagnetically and a coupling capacitor is introduced. The creation of an attenuation pole near the passband was detailed. A design procedure for the two-pole extended filter is derived from an analysis using even-and odd-mode impedances. Experimental filters were constructed by ceramic lamination technique. They exhibited excellent performances suitable for portable telephones.

This paper describes newly developed miniaturized stepped impedance resonators with a double coaxial structure (DC-SIR's) and their application to bandpass filters. The new DC-SIR's using dielectric material are devised for more compact and lower frequency bandpass filters. Fundamental characteristics such as resonance properties and unloaded-Q make it clear that DC-SIR's have attractive features that miniaturization can be achieved without Q-factor degradation. Trial 400 MHz bandpass filters incorporating DC-SIR's are also made. Experimental results of bandpass filters proved that DC-SIR's are applicable to lower frequency band radio equipment and able to contribute to the expansion of applicable frequency ranges of dielectric coaxial resonators.

A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.

This paper describes, based on generation mechanism of conductive noise, that the real conductive noise on AC-mains can't be measured by LISN and 50 Ω-input impedance instrument specified by regulations such as CISPR. Second, it is pointed out that one of the causes of poor reproducibility in radiated emission measurement is the difference among line impedances of AC-mains. Finally, it is insisted that the apparatus such as LISN is necessary for stable measurement of radiated emission, and what improvement on LISN characteristics for higher frequency range should be done is introduced.

It has become very important to study the lightning surges that were induced in subscriber telecommunication equipment because of the increase of susceptible circuits to the over voltage. The test generator is desire to be developed evaluating the resistibility of equipments against lightning surges. This paper proposes a new lightning-test method for subscriber telecommunication equipment. The waveform of the test generator simulates that of the induced lightning surge voltage caused by a nearby return stroke. The output impedance of the surge generator is determined to match the common-mode impedance of telecommunication lines. The damaged condition of circuit parts and the trouble occurrence rate estimated by using this method agree well with actual observations.

The mechanical impedance of silicone–gel model or chest surface has been measured and the viscoelasticity and effective vibrating radius have been obtained from the impedance. They depend on the distance between the internal block of the silicone–gel/ribs of right chest and the gel surface/skin surface. The 3–D image of internal structure is reconstructed, based on the relation between the distance from the surface and the effective vibrating radius.

A new algorithm, which is incorporated into the waveform relaxation analysis, for efficiently simulating the transient response of single lossy transmission lines or lossy coupled multiconductor transmission lines, terminated with arbitrary networks will be presented. This method exploits the inherent delay present in a transmission line for achieving simulation efficiency equivalent to obtaining converged waveforms with a single iteration by the conventional iterative waveform relaxation approach. To this end we propose 'line delay window partitioning' algorithm in which the simulation interval is divided into sequential windows of duration equal to the transmission line delay. This window scheme enables the computation of the reflected voltage waveforms accurately, ahead of simulation, in each window. It should be noted that the present window partitioning scheme is different from the existing window techniques which are aimed at exploiting the non–uniform convergence in different windows. In contrast, the present window technique is equivalent to achieving uniform convergence in all the windows with a single iteration. In addition our method eliminates the need to simulate the transmission line delay by the application of Branin's classical method of characteristics. Further, we describe a simple and efficient method to compute the attenuated waveforms using a particular form of lumped element model of attenuation function. Simulation examples of both single and coupled lines terminated with linear and nonlinear elements will be presented. Comparison indicates that the present method is several times faster than the previous waveform relaxation method and its accuracy is verified by the circuit simulator PSpice.

A method using the microstrip line resonator is applied to measurements of the dielectric properties of a substrate and the surface resistance of a conducting strip line versus the frequency as well as the temperature. The variational expressions for the capacitance per unit length of several microstrip lines such as an inverted microstrip line and multi-layer microstrip lines are derived. The expression involves an integral along a semi-infinite interval, but the numerical integration is very easy. Effects of a buffer layer deposited on the substrate are investigated by using a multi-layer microstrip line model. The permittivity and the loss tangent of several dielectric materials are measured by the MSL and the IMSL or the multi-layer microstrip resonator. The measured surface resistance of copper and iron is also presented to show the validity of the present method. The surface resistance of a BSCCO thick film is also presented.

In this paper, we analyze high-Tc superconducting (HTS) microstrip antenna (MSA) using modified spectral domain moment method. Although it is assumed that the patch and the ground plane of the MSA are perfect electric conductors (PECs) in the conventional spectral domain method, we modify this method to compute the conduction loss of the HTS-MSA. In our analysis, the effect of the HTS film is introduced by the surface impedance which we can estimate by using the three fluid model and experimental results. This paper presents numerical results about the HTS-MSA, for example, the relations between the thickness of the substrate and the radiation efficiency, the temperature and the resonant frequency, and so forth. And we discuss the effective power range where the performance of the HTS-MSA is superior to that of the Cu-MSA.

Recent achievements in low-voltage and low-power circuit techniques are reported in this paper. DC current in low-voltage CMOS circuits stemming from the subthreshold current in MOS transistors, is effectively reduced by applying switched-power-line schemes. The AC current charging the capacitance in DRAM memory arrays is reduced by a partial activation of array blocks during the active mode and by a charge recycle during the refresh mode. A very-low-power reference-voltage generator is also reported to control the internal chip voltage precisely. These techniques will open the way to using giga-scale LSIs in battery-operated portable equipment.

This paper proposes a novel method to realize highly linear MOS circuits using MOSFETs in the nonsaturation region. The proposed method is based on the cancellation of nonlinearity of two MOSFETs by using a current inversiontype negative impedance converter. First, grounded and floating resistor realizations are discussed. Next, by exploiting the MOS resistor circuits, gyrators and inductors are realized. As an application example, a third-order doubly-terminated LC filter is simulated. SPICE analysis shows low total harmonic distortions, excellent controllability and small gain error in the passband.

This paper proposes a new circuit configuration for realizing a type 1 mutator using two current conveyor (CCIIs) and a network with a suitable current transfer function. The advantage of the proposed circuit configuration is that any impedance functions which are proportional to the realizable current transfer function can be simulated.

A laser/microwave method using two lasers of different wavelengths for carrier excitation is proposed to evaluate Si surfaces. These constitute a He-Ne laser (wavelength=633 nm, penetration depth=3 µm) and a YAG laser (wavelength=1060 nm, penetration depth=500 µm). Using a microwave probe, the amount of excited carriers can be detected. The carrier concentration is mainly dependent on the condition of the surface when carriers are excited by the He-Ne laser, as well as on the condition of the bulk region when carriers are excited by the YAG laser. Microwave intensities detected under the He-Ne and the YAG lasers illumination are referred to as the surface-recombination-velocity-related microwave intensity (SRMI) and the bulk-related microwave intensity (BRMI), respectively. The difference between SRMI and BRMI is called relateve SRMI (R-SRMI), and is closely related to the condition of the surface and surface active region. We evaluate the surfaces of the samples after plasma and wet etching to remove the photoresist layer. And we evaluate the surfaces of the samples after heat or HF treatment which is done to recover the damage introduced by plasma etching. It was found that the R-SRMI method is better suited to surface evaluation than conventional lifetime measurements.