When BJTs are irradiated by gamma rays, interface trapped charges and positive oxide trapped charges are formed by ionization at the Si-SiO2 interface and SiO2 regions, respectively. These trapped charges affect the movement of carriers depending on the type of BJT. This paper presents experimental results regarding operating characteristics of gamma irradiated pnp Si BJTs.

Cross sections that cause single event upsets by heavy ions are sensitive to doping concentration in the source and drain regions, and the structure of the raised source and drain regions especially in FDSOI. Due to the parasitic bipolar effect (PBE), radiation-hardened flip flops with stacked transistors in FDSOI tend to have soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results in this study show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in the drain. Increasing the doping concentration in the source and drain region enhance the Auger recombination of carriers there and suppresses the parasitic bipolar effect. PBE is also suppressed by decreasing the silicon thickness of the raised layer. Cgg-Vgs and Ids-Vgs characteristics change smaller than soft error tolerance change. Soft error tolerance can be effectively optimized by using these two determinants with only a small impact on transistor characteristics.

Effects of electron beam irradiation at 15 keV on graphene are investigated by optical and electron characterization using Raman and two-terminal resistance measurement and photoconductivity measurement. In Raman spectra, increase of defects in D-peak to G-peak ratio by increase of electron irradiation by 70 mC/cm2 was found. Resistance of graphene showed an increase after the irradiation. Rather sensitive change was found in photoconductivity of irradiated graphene under ultra-violet (UV) illumination, suggesting irradiation induced defects affect a photoconductivity properties of the graphene.

A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.

A 60-GHz CMOS transmitter with on-chip antenna for high-speed short-range wireless interconnections is presented. The radiation gain of the on-chip antenna is doubled using helium-3 ion irradiation technique. The transmitter core is composed of a resistive-feedback RF amplifier, a double-balanced passive mixer, and an injection-locked oscillator. The wideband and power-saving design of the transmitter core guarantees the low-power and high-data-rate characteristic. The transmitter fabricated in a 65-nm CMOS process achieves 5-Gb/s data rate with an EVM performance of $-$12 dB for BPSK modulation at a distance of 1,mm. The whole transmitter consumes 17,mW from a 1.2-V supply and occupies a core area of 0.64,mm$^{2}$ including the on-chip antenna. The gain-enhanced antenna together with the wideband and power-saving design of the transmitter provides a low-power low-cost full on-chip solution for the short-range high-data-rate wireless communication.

380keV proton irradiation effects are investigated on p-GaN and n-GaN layers in GaN-based light emitting diode (LED) by characterizing current-voltage (I-V) characteristics of p-n junction, and two-terminal resistance of p- and n-GaN on both type of layers in LED wafer. Two-terminal resistance on n-GaN kept its initial value after the 1×1014cm-2 fluence, and was remained the same order after the 1×1015cm-2 fluence. On the other hand, p-GaN showed sensitive increase in two-terminal resistance after the 1×1014cm-2, and six orders of increase after the 1×1015cm-2 fluence. Observed sensitive increase of resistivity in p-GaN is explained as a lower initial hole density in p-GaN than the initial electron density in n-GaN layer.

As one of organic electroluminescent (EL) materials, we developed a method of fabricating an ink using low molecular- weight materials with a long emission lifetime for application to the inkjet method. Although the emission lifetime is usually long for low molecular-weight materials, their high manufacturing cost due to the necessity of vapor deposition is a disadvantage. We utilized the low molecular-weight material, tris-(8-hydroxyquinoline) aluminum (Alq3), and investigated its dispersibility in a solvent in which it has low solubility. In addition, we ascertained whether the material could maintain its photoluminescence characteristic under the irradiation of ultraviolet rays by investigating the emission of photoluminescence. Alq3 was crystallized into nanosize crystals, whose surface was then coated with a primary amine by the gas evaporation method. The fabricated ink contained crystals with an average size of 250nm and high dispersibility in tetradecane, in which Alq3 is insoluble. Thus, we made it possible to carry out an inkjet method with low molecular weight EL materials.

Polarization-maintaining photonic crystal fiber couplers (PM-PCFCs) were fabricated using a CO2 laser irradiation technique. We could control the states of air holes in the tapered region of couplers by adjusting the laser power density in the fusion and the elongation processes. It was demonstrated that the air hole remaining PM-PCFC exhibited polarization-splitting characteristics and that the air hole collapsed PM-PCFC had polarization insensitive coupling characteristics.

Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.

For the construction of photonic crystal fiber (PCF) systems using their unique properties, a PCF coupler (PCFC) is one of the key components of the systems. The characteristics of the PCFC depend on the state of air holes in the tapered region of the PCFC because the state of air holes in the tapered region affects light propagation in the PCFC taper. In this paper, coupling characteristics of PCFCs were theoretically investigated. In PCFCs with air hole remaining tapers, we found that a smaller elongation ratio i.e. a stronger elongation is required to obtain optical coupling as an air hole pitch or a ratio of air hole diameter to pitch is larger. In PCFCs with air hole collapsed tapers, it was clarified that a dependence of extinction ratio on air hole collapsed elongation ratio is higher for smaller elongation ratio. It was also clarified that an air hole remaining PCFC has slow wavelength characteristics in extinction ratio compared to an air hole collapsed PCFC. Air hole remaining PCFCs and air hole collapsed PCFCs were fabricated using a CO2 laser irradiation technique. We could successfully control whether air holes in the PCFC taper were remaining or collapsed by adjusting the irradiated laser power in the elongation process of the PCFC fabrication. It was experimentally clarified that the air hole remaining PCFC has slow wavelength characteristics in extinction ratio compared to the air hole collapsed PCFC. The tendencies of the measured wavelength characteristics of PCFCs agree with those of numerical results.

For the realization of low-voltage full-color FEDs, requirements for phosphor for the FED are proposed. Especially, the influence of released gases or substances from phosphors on the field emission within the FED was made clear. It was clarified that the analysis of F-N plots of the V-I curve of field emission characteristics was helpful to know the interaction of field emission and phosphors. In the experiment, we first obtained the depth from the phosphor surface of the low voltage electron excitation in case of ZnGa2O4, where the region available for cathodoluminescence at the anode voltage of 400 V is about 63 nm deep from the surface. The characteristic of the 12.4 cm-320(trio)240 pixels low-voltage full-color FED is reported. The luminance of 154 cd/m2 was attained at the anode voltage of 400 V and the duty factor of 1/241. Supported by the high potential of the FED as a flat panel, each problem shall be steadily solved to secure the firm stand as a new full color flat display in new applications.

We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn=2nVJ, where VJ=f0h/2e in two-junction arrays. The microwave power dependence of I-V curves shows the steps corresponding to the RSJ model.

Area-restricted illumination of light onto a voltage-biased single-electron tunnel junction array is modeled by reduced resistance of junctions, and its effects on current-voltage characteristics, charge distributions and potential profiles are calculated by a Monte Carlo method. The results show that photocurrent nearly proportional to the applied voltage is generated above a threshold voltage determined by Coulomb blockade effect. The photocurrent increases with increasing irradiated area, which is ascribed to reduction in total resistance of the circuit. Under irradiation, a characteristic charge distribution is formed, i. e. , negative and positive charge bumps are formed in the nodes at the dark and bright boundaries. The charge bumps serve to screen the electric field formed by the bias voltage and create almost a flat potential in the irradiated area. Furthermore, time-response of the charge distribution to a pulse irradiation is also studied. For high dark resistance, the charge bumps are sustained for a long period working as a memory of light. These results suggest feasibility of single-electron photonic devices such as photodetectors and photomemories.

A Monte Carlo method for the passage of electrons based on a single scattering model is developed. A code based on this method is operable on personal computers, and has been applied to analyze electron behavior in a layered system consisting of Ti (an accelerator window), air, cellulose triacetate (CTA) and backing material irradiated by 300 keV electrons. The energy spectra and the angular distributions of electrons on the CTA surface as well as depth distributions of energy deposition in the CTA for various backing materials have been obtained. Some of these results are compared with experiments, and show fairly good agreement.

Plasmaless etching using ClF3 gas has been investigated on nitride films with different composition. For the sputter deposited and thermally grown silicon nitride films containing no hydrogen, the etch rate increases and the activation energy decreases with increase of the composition ratio of silicon to nitrogen between 0.75 and 1.3. This fact indicates that the etching is likely to proceed through the reaction between Si and ClF3. The native oxide on the silicon-nitride films can also be removed with ClF3 gas. Ultra-violet light irradiation from a low pressure mercury lamp remarkably accelerates the removal of the native oxide and the etch rate of the thermally grown silicon-nitride films. For the plasma deposited films, the etch rate is strongly accelerate with increasing hydrogen content in the films, but the activation energy hardly depends on the bounded hydrogen in the films, consistent with the results for Si etching.