A 5.2 GHz 1 dB conversion gain, IP1 dB = -19 dBm and IIP3= -9 dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 µm SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for the image rejection. Polyphase filters are also used to generate LO and RF quadrature signals around 5 GHz in the double quadrature downconverter.

An even harmonic quadrature mixer (EH-QMIX) with a balanced configuration is proposed for a direct conversion receiver. The unit even harmonic mixer (EHMIX) used for I/Q paths consists of two anti parallel diode pairs (APDPs) and a pair of diplexers. When the second harmonic of LO (2LO) from the LO section is applied to the LO port as a spurious component, a conventional single-ended EHMIX using APDP converts the 2LO leakage from the LO section into the baseband and the d.c. offset and the self-detected LO noise arise at the baseband degrade the sensitivity. This proposed balanced EHMIX configuration can cancel out the 2LO leakage in itself. Therefore, the d.c. offset and the LO noise are significantly suppressed and the degradation of the sensitivity can be avoided. The suppression characteristic of the d.c. offset and the LO noise are verified by the simulation and the measurements. By using this balanced configuration, the fabricated EH-QMIX achieves wider frequency band characteristic than that of the single-ended EH-QMIX, and it shows 20% relative bandwidth at L-band.

This paper presents novel phase-continuous frequency hopping (FH) control for a direct frequency synthesizer (DFS) using a quadrature mixer driven by two direct digital synthesizers (DDSs). To achieve wideband FH in both of the lower and the upper sidebands of a local frequency in a quadrature mixer, the proposed DFS decreases or increases the phase of DDS output signals corresponding to frequency offset from a local frequency of the quadrature mixer. To realize phase decrement, the proposed method adds a complement number in a phase accumulator of a DDS, while a conventional DDS does not use phase decrement but uses a switchable combiner. In addition, as the phase accumulator output changes continuously by summing phase increment, the proposed method always assures phase continuity of a DFS output signal, which ends up suppressing sidelobe level of frequency hopped signals. The calculation and measurement results indicate that a sidelobe of a signal spectrum using the proposed phase continuous method is approximately 10 dB better than that using a conventional phase discontinuous method.

We performed numerical analyses on structure sensitive field emission properties of our proposing plasmon resonant photomixer (PRX) in the terahertz range. The photomixer incorporates doubly interdigitated grating strips for gate electrodes and a vertical resonator structure for realizing highly efficient terahertz emission even at room temperature. We investigated the dependence of total field emission properties of PRX's on their material and dimension parameters. Introduction of low-conductive gate electrodes and ac-coupled 2D periodic plasmon gratings with depleted connecting portions are effective for expanding its lower cutoff frequency. The cutoff frequency, which is around 1.0 THz in standard metal-gates configuration, is expanded to less than 500 GHz. The output intensity could also be amplified more than double. On the other hand, a shorter vertical cavity is effective for expanding its upper cutoff frequency, which is expanded close to vertical resonant frequency, while maintaining the lower cutoff frequency. The combination of these design rules can realize much broader bandwidth operation.

We analytically investigated the feasibility of multiplier operation in the terahertz range for our original plasmon resonant photomixer. The photomixer features two unique structures (doubly interdigitated gate gratings and a vertical cavity) for higher radiation efficiencies. Its total field emission properties are the result of a combination of plasmon excitation dynamics and electromagnetic field dynamics. The plasmon excitation formulated by the hydrodynamic equations exhibits fundamental and harmonic resonances whose intensities monotonically decrease with the number of harmonics due to the dispersive plasma damping factors. The electromagnetic dynamics, on the other hand, formulated by the Maxwell's equations, reflect material- and structure-dependent device parameters; the grating-bi-coupled plasmonic cavity together with the vertical cavity structures produce nonlinear field emission properties. This results in extraordinary field enhancement at distinct frequencies inconsistent with the plasmon resonances. The frequency-dependent FDTD (finite difference time domain method) Maxwell's simulation revealed that the field emission peak frequency shifted upward apart from the fundamental mode of plasmon resonant frequency and approached to its second harmonic frequency with increasing the electron density in the plasmon cavity. Calculated total field emission spectra indicated that highly dense 2D-plasmon conditions enable frequency-doubler operation in the terahertz range.

This paper proposes the combination of adjustable architecture and parameter optimization software, employing a method based on artificial intelligence (AI), to realize an image rejection mixer (IRM) that can enhance its image rejection ratio within a short period of time. The main components of the IRM are 6 Gilbert-cell multipliers. The tail current of each multiplier is adjusted by the optimization software, and the gain and phase characteristics are optimized. This adjustment is conventionally extremely difficult because the 6 tail currents to be adjusted simultaneously are mutually interdependent. In order to execute this adjustment efficiently, we employed a Genetic Algorithm (GA) that is a robust search algorithm that can find optimal parameter settings in a short time. We have successfully developed an IRM chip that has a performance of 71 dB and is suitable for single-chip integration with WCDMA applications.

The port-to-port isolation of the micromixer is studied using three different p-type downconversion micromixers in 0.35-µm CMOS technology. Both the body effect and the well isolation influence the port-to-port isolation significantly. The body effect degrades the LO-to-IF isolation and also deteriorates the LO-to-RF isolation. Without the well isolation, the LO-to-RF isolation drops. However, the RF-to-IF isolation is independent of the body effect and well isolation. The p-type micromixer with a separate N-well and without body effect has the best port-to-port isolation properties; its LO-to-IF, LO-to-RF, and RF-to-IF isolations are -59 dB, -58 dB, and -30 dB, respectively.

This paper presents an even harmonic quadrature mixer (EH-QMIX) with a simple filter configuration and an integrated LTCC module including LNAs, band rejection filters (BRFs), and the proposed EH-QMIX for W-CDMA direct conversion receiver (DCR). Since the DCR has no spurious responses, a BRF instead of a high-Q band pass filter can be applicable for eliminating undesired signals and it can be built in the LTCC substrates easily. As LO frequency is half of RF frequency in the EH-QMIX, diplexer can be composed of simple filters and it can be also integrated in the substrates. As a result, the whole RF circuits of the EH-DCR using a proposed EH-QMIX are integrated in the LTCC module and miniaturization of the receiver is achieved. Moreover, in order to suppress the degradation of the amplitude and the phase imbalances in the quadrature mixer caused by interferences of signals, RF characteristics of the circuits in the mixer such as reflection coefficients, isolations are discussed. A developed LTCC module shows good performances for W-CDMA direct conversion receiver.

This paper describes the first experimental results for a waveguide-type all-NbN superconductor-insulator-superconductor (SIS) heterodyne mixer on an MgO substrate designed to operate over the gap frequency of Nb. The mixer consists of an NbN/MgO/NbN junction, which has a length of one wavelength at 880 GHz as a tuning circuit, an NbN/MgO/NbN microstrip as a λ/4 impedance transformer, and an RF choke filter. The mixer chip was designed using a high-frequency-structure simulator. Its return-loss and embedding-impedance characteristics were examined using a 180-times-scaled mixer model. By optimizing the cutting and polishing processes for the MgO substrate, we were able to fabricate the mixer chip with an accuracy of less than 5 µm. We succeeded in mounting the chip on a mixer block and in estimating the receiver noise temperature. The uncorrected minimum double-sideband receiver noise temperature was 740 K at 824 GHz. A comparison of the receiver noise temperature in a quasi-optical SIS mixer fabricated on the same wafer as the waveguide mixer showed that input noise was the major contributor to receiver noise in the waveguide mixer.

We report on the design and experimental results of a fix-tuned Superconductor-Insulator-Superconductor (SIS) mixer for Atacama Large Millimeter/submillimeter Array (ALMA) band 8 (385-500 GHz) receivers. Nb-based SIS junctions of a current density of 10 kA/cm2 and one micrometer size (fabricated with a two-step lift-off process) are employed to accomplish the ALMA receiver specification, which requires wide frequency coverage as well as low noise temperature. A parallel-connected twin-junction (PCTJ) is designed to resonate at the band center to tune out the junction geometric capacitance. A waveguide-microstrip probe is optimized to have nearly frequency-independent impedance at the probe's feed point, thereby making it easy to match the low-impedance PCTJ over a wide frequency band. The RF embedding impedance is retrieved by fitting the measured pumped I-V curves to confirm good matching between PCTJ and signal source. We demonstrate here a minimum double-sideband receiver noise temperature of 3 times of quantum limits for an intermediate-frequency range of 4-8 GHz. The mixers were measured in band 8 cartridge with a sideband separation scheme. Single-sideband receiver noise below ALMA specification was achieved over the whole band.

This paper presents a frequency-controllable image rejection mixer in heterodyne architecture for 2 GHz applications based on TSMC 0.18 µm CMOS technology. The designed mixer uses a notch filter to suppress the image signal and allows precise tuning the image frequencies. An image rejection of 20-70 dB is obtained in a 200 MHz of bandwidth. The simulation results show single-side band (SSB) NF is improved 3.7 dB, the voltage conversion gain of 14.7 dB, improved by more than 4 dB. The circuit operates at the supply voltage of 1.8 V, and dissipates 11.34 mW.

A reconfigurable CMOS mixer for multi-standard application is presented. The mixer can be tuned and adjusted to multi-frequency bands using a flexible matching network which is a kind of variable reactance transformer. The flexible matching network consists of a few switched inductors and capacitors. The mixer has acceptable conversion gain, IIP3 and NF. It operates with a return loss of less than -10 dB through 2-6 GHz except for a few narrow frequency bands.

This paper presents a high performance wideband CMOS direct down-conversion mixer for UWB based on 0.18 µm CMOS technology. The proposed mixer uses the current bleeding technique and an extra resonant inductor to improve the conversion gain, noise figure (NF) and linearity. Also, with an extra inductor and the careful choosing of transistor sizes, the mixer has a very low flicker noise. The shunt resistor matching is applied to have a 528 MHz bandwidth matching at 50 Ohm. The simulation results show the voltage conversion gain of 20.5 dB, the double-side band NF of 5.6 dB. Two-tone test result indicates 11.25 dBm of IIP3 and higher than 70 dBm of IIP2. The circuit operates at the supply voltage of 1.8 V, and dissipates 11.5 mW.

This paper describes a millimeter-wave pulse transmitter with a 38 GHz-band Voltage Controlled Oscillator (VCO) and a 77/38 GHz-band harmonic mixer. This harmonic mixer works as both of a pulse modulator and a multiplier. This configuration of the transmitter is very simple, and can be applied to high-speed pulse modulation like Ultra Wide Band. By using the harmonic mixer, furthermore, a fluctuation of the load impedance of the 38 GHz VCO can be reduced. Compared with the conventional configuration, the required amount of isolation between the VCO and the load has been able to be reduced by more than 30 dB as a result of the experiment in a millimeter-wave band.

The millimeter-wave (MMW) broadband mixers that are useful for measurement instruments to analyze MMW high data rate signals have been investigated. At first, we propose the specialized RF front-end for analyses of MMW high data rate signals. Next, the required specifications for the 1st mixers of the front-end are estimated, and the design, fabrication, and testing results of Q, V, and W-band monolithic broadband resistive mixers are described. The testing results are compared with performances of the diode mixer designed for V-band. It was found that the resistive mixers have very attractive performances of low conversion loss, good frequency flatness and high third order intercept point (IP3) with low Local (LO) oscillators power. The developed resistive mixers are suitable for the proposed MMW band measurement instruments.

This CMOS transceiver IC exploits the superheterodyne architecture to implement a low-cost RF front-end with only 6.25 mm2 die area for IEEE 802.11b standard. The transceiver is implemented in 0.25 µm CMOS process with 2.7 V supply voltage, and achieves a -86 dBm 11 Mb/s receive sensitivity and a 2 dBm transmit output power.

Beam control using active antenna arrays with self-oscillating harmonic mixers has been investigated. The active antenna is composed of a patch antenna receiving RF signal and a parallel feedback type oscillator which operates as the self-oscillating harmonic mixer, and down-converts the received RF signal into IF signal. The mixer has two ports for local oscillating (LO) signal. One is an output port extracting the LO signal. The other is an input port for an injection signal to synchronize the local oscillation. The mixers can be coupled unilaterally without other nonreciprocal components by connecting the output port to the input port in the next mixer. In the unilaterally coupled array, the phase differences of the LO signals between the adjacent mixers can be varied without phase shifters in injection locking state by changing the local free-running frequencies of the self-oscillating mixers. The receiving pattern can be controlled by combining the IF signals from the individual active antennas, which have phases associated with the LO signals. The IF is difference between the RF and double of the LO frequency so that arbitrary phase differences from 0 to 2π radian can be provided to the output IF signals. The experiments using the two- and three-element arrays demonstrated beam control capability.

This paper presents a dual-band mixer equipped with a dual-band load using current combine technique to minimize chip area by sharing inductors for each frequency band. A systematic design methodology for the current combine load based on parasitic effect considerations is also developed. By following the proposed design procedure, the load inductance and combine capacitance for the dual-band mixer can be easily determined. A 2.4/5.2-GHz CMOS mixer design has been implemented to demonstrate the feasibility of the design technique.

An even-harmonic mixer using a bipolar differential pair (bipolar harmonic mixer;BHMIX) is theoretically analyzed from the direct conversion point of view; i.e, conversion gain, third-order input intercept point (IIP3), self-mixing induced dc offset level, and second-order input intercept point (IIP2). Also, noise are analyzed based on nonlinear large-signal model, and numerical results are given. Noises are treated as cyclostationary noises, thus all the folding effects are taken into account. Factors determining IIP3, IIP2, dc offset, and noise are identified and estimation procedures for these characteristics are obtained. For example, design guidelines for the optimal noise performance are given. Measured results support all the analysis results, and they are very useful in the practical BHMIX design.

This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 µm SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP1 dB of -9 dBm and OIP3 of 4 dBm when input IF=0.3 GHz, LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than 18 dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.90.9 mm2 with 3 integrated on-chip inductors.