We developed a Nb 4-layer process for fabricating superconducting integrated circuits that involves using caldera planarization to increase the flexibility and reliability of the fabrication process. We call this process the planarized high-speed standard process (PHSTP). Planarization enables us to flexibly adjust most of the Nb and SiO2 film thicknesses; we can select reduced film thicknesses to obtain larger mutual coupling depending on the application. It also reduces the risk of intra-layer shorts due to etching residues at the step-edge regions. We describe the detailed process flows of the planarization for the Josephson junction layer and the evaluation of devices fabricated with PHSTP. The results indicated no short defects or degradation in junction characteristics and good agreement between designed and measured inductances and resistances. We also developed single-flux-quantum (SFQ) and adiabatic quantum-flux-parametron (AQFP) logic cell libraries and tested circuits fabricated with PHSTP. We found that the designed circuits operated correctly. The SFQ shift-registers fabricated using PHSTP showed a high yield. Numerical simulation results indicate that the AQFP gates with increased mutual coupling by the planarized layer structure increase the maximum interconnect length between gates.

We describe the recent progress on a Nb nine-layer fabrication process for large-scale single flux quantum (SFQ) circuits. A device fabricated in this process is composed of an active layer including Josephson junctions (JJ) at the top, passive transmission line (PTL) layers in the middle, and a DC power layer at the bottom. We describe the process conditions and the fabrication equipment. We use both diagnostic chips and shift register (SR) chips to improve the fabrication process. The diagnostic chip was designed to evaluate the characteristics of basic elements such as junctions, contacts, resisters, and wiring, in addition to their defect evaluations. The SR chip was designed to evaluate defects depending on the size of the SFQ circuits. The results of a long-term evaluation of the diagnostic and SR chips showed that there was fairly good correlation between the defects of the diagnostic chips and yields of the SRs. We could obtain a yield of 100% for SRs including 70,000JJs. These results show that considerable progress has been made in reducing the number of defects and improving reliability.