In this paper, we describe our superconducting digital technology that uses Nb/AlOx/Nb Josephson junctions. Superconducting devices have intrinsically superior characteristics than those of semiconductor devices, and Nb/AlOx/Nb junctions have ideal current-voltage characteristics for digital applications. Superconducting devices that use Nb/AlOx/Nb junctions have being actively developed because of their high speed and low power characteristics. Presently, we can fabricate more than twenty thousand junctions on one chip. Using niobium technology, a superconducting 4-kbit RAM has been already successfully developed. We have demonstrated the operation of a network system with a superconducting network chip. Some problems, such as difficulty in high-speed testing, disturbance from trapped magnetic flux and so on, have been overcome by techniques such as a clock-driven testing method, moat structures and so on. The developed technologies, such as the fabrication technology, the design technology for moat structures and so on, must become the basic keys for the development of digital applications based on a single flux quantum device, which will be a promising component for ultra-high speed systems in the twenty-first century.

Superconductive LSIs with Josephson junctions have features such as low power dissipation and high switching speed. In this paper, we review our developed 4-Kbit RAM with vortex transitional memory cells as an illustration of superconductive LSIs with Josephson junctions. We have developed a fabrication process technology for the 4-Kbit RAM. In the 4-Kbit RAM, 380ps access time and 9.8 mW power dissipation have been experimentally obtained. And also, we have estimated a suitable moat structure to reduce the influence of trapped magnetic structure. The 4-Kbit RAM has been successfully operated with a bit yield of 99.8%. Furthermore, we discuss GHz testing which is one of the most significant issues concerning superconductive digital LSIs.

We developed an Nb-based fabrication process for single flux quantum (SFQ) circuits in a Japanese government project that began in September 2002 and ended in March 2007. Our conventional process, called the Standard Process (SDP), was improved by overhauling all the process steps and routine process checks for all wafers. Wafer yield with the improved SDP dramatically increased from 50% to over 90%. We also developed a new fabrication process for SFQ circuits, called the Advanced Process (ADP). The specifications for ADP are nine planarized Nb layers, a minimum Josephson junction (JJ) size of 11 µm, a line width of 0.8 µm, a JJ critical current density of 10 kA/cm2, a 2.4 Ω Mo sheet resistance, and vertically stacked superconductive contact holes. We fabricated an eight-bit SFQ shift register, a one million SQUID array and a 16-kbit RAM by using the ADP. The shift register was operated up to 120 GHz and no short or open circuits were detected in the one million SQUID array. We confirmed correct memory operations by the 16-kbit RAM and a 5.7 times greater integration level compared to that possible with the SDP.

A single flux quantum (SFQ) logic cell library has been developed for the 10 kA/cm2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5 kA/cm2 to 10 kA/cm2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400 GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100 GHz.

We describe the recent progress on a Nb nine-layer fabrication process for large-scale single flux quantum (SFQ) circuits. A device fabricated in this process is composed of an active layer including Josephson junctions (JJ) at the top, passive transmission line (PTL) layers in the middle, and a DC power layer at the bottom. We describe the process conditions and the fabrication equipment. We use both diagnostic chips and shift register (SR) chips to improve the fabrication process. The diagnostic chip was designed to evaluate the characteristics of basic elements such as junctions, contacts, resisters, and wiring, in addition to their defect evaluations. The SR chip was designed to evaluate defects depending on the size of the SFQ circuits. The results of a long-term evaluation of the diagnostic and SR chips showed that there was fairly good correlation between the defects of the diagnostic chips and yields of the SRs. We could obtain a yield of 100% for SRs including 70,000JJs. These results show that considerable progress has been made in reducing the number of defects and improving reliability.

We investigated single flux quantum sinc filters with multistage decimation structure in order to realize high-speed sinc filter operation. Second- and third-order (k=2, 3) sinc filters with a decimation factor N=2 were designed and confirmed their proper operations. These sinc filters with N=2 are utilized as elementary circuit blocks of our multistage decimation sinc filters with N=2M, where M indicates the number of the stage of the decimation. As an example of the multistage decimation filter, we designed a k=2, N=4 sinc filter which was formed from a two-stage decimation structure using k=2, N=2 sinc filters, and confirmed its proper operation. The k=2, N=4 sinc filter consisted of 1372 Josephson junctions with the power consumption of 191 µW.

A polarity-convertible driver is necessary as a basic component of several Josephson random access memories. This driver must be able to inject a current having positive or negative polarity into a load transmission line such as a word or bit line of the RAM. In this paper, we propose a resistor coupled Josephson polarity-convertible driver which is highly sensitive to input signals and has a wide operating margin. The driver consists of several Josephson junctions and several resistors. The input signal is directly injected to the driver through the resistors. The circuit design is discussed on the operating principle of the driver. The driver is fabricated by 1.5 µm Nb technology with Nb/AlOx/Nb Josephson junctions, two layer Nb wirings, an Nb ground plane, Mo resistors, and SiO2 insulators. The Nb/AlOx/Nb Josephson junctions are fabricated using technology refined for sub-micron size junctions. The insulators between wirings are formed using bias sputtering technique to obtain good step coverage. The driver circuit size is 53 µm34 µm. Measurements are carried out at 10 kHz to quasistatically test the polarity-convertible function and the operating margin of the driver. Proper polarity-convertible operation is confirmed for a large operating bias margin of 70% at a fairly small input current of 0.3 mA.

We developed a Nb 4-layer process for fabricating superconducting integrated circuits that involves using caldera planarization to increase the flexibility and reliability of the fabrication process. We call this process the planarized high-speed standard process (PHSTP). Planarization enables us to flexibly adjust most of the Nb and SiO2 film thicknesses; we can select reduced film thicknesses to obtain larger mutual coupling depending on the application. It also reduces the risk of intra-layer shorts due to etching residues at the step-edge regions. We describe the detailed process flows of the planarization for the Josephson junction layer and the evaluation of devices fabricated with PHSTP. The results indicated no short defects or degradation in junction characteristics and good agreement between designed and measured inductances and resistances. We also developed single-flux-quantum (SFQ) and adiabatic quantum-flux-parametron (AQFP) logic cell libraries and tested circuits fabricated with PHSTP. We found that the designed circuits operated correctly. The SFQ shift-registers fabricated using PHSTP showed a high yield. Numerical simulation results indicate that the AQFP gates with increased mutual coupling by the planarized layer structure increase the maximum interconnect length between gates.

We have developed a planarization method applicable to large-scale superconductive Nb device fabrication. A planarized multi-layer wiring structure is obtained independently of the wiring size (width, length, and density) by combining three steps for fabricating an SiO2 insulator layer: bias-sputtering, chemical mechanical polishing, and etching with a reversal mask. Fabricated three-level wiring structures, consisting of 200- or 300-nm-thick Nb and SiO2 layers, had excellent layer flatness, and the leakage current (< 0.1 µA/cm2) between the Nb layers was sufficiently low. Two hundred chains of stepwise and stacked contacts yielded a sufficiently large critical current, typically more than 10 mA at 4.2 K.

This review provides a current overview of the fabrication processes for superconducting digital circuits at CRAVITY (clean room for analog and digital superconductivity) at the National Institute of Advanced Industrial Science and Technology (AIST), Japan. CRAVITY routinely fabricates superconducting digital circuits using three types of fabrication processes and supplies several thousand chips to its collaborators each year. Researchers at CRAVITY have focused on improving the controllability and uniformity of device parameters and the reliability, which means reducing defects. These three aspects are important for the correct operation of large-scale digital circuits. The current technologies used at CRAVITY permit ±10% controllability over the critical current density (Jc) of Josephson junctions (JJs) with respect to the design values, while the critical current (Ic) uniformity is within 1σ=2% for JJs with areas exceeding 1.0 µm2 and the defect density is on the order of one defect for every 100,000 JJs.

In this paper, we describe our SFQ circuit design and measurement carried out in SRL-ISTEC. We are studying an oversampling sigma-delta modulator and a counter-type decimation filter with multistage structure for developing AD converters for software-defined radio application. We are also developing a superconducting memory, whose peripheral circuits are constructed with SFQ circuits.

We describe a large-scale integrated circuit (LSI) design of rapid single-flux-quantum (RSFQ) circuits and demonstrate several reconfigurable data-path (RDP) processor prototypes based on the ISTEC Advanced Process (ADP2). The ADP2 LSIs are made up of nine Nb layers and Nb/AlOx/Nb Josephson junctions with a critical current density of 10kA/cm2, allowing higher operating frequencies and integration. To realize truly large-scale RSFQ circuits, careful design is necessary, with several compromises in the device structure, logic gates, and interconnects, balancing the competing demands of integration density, design flexibility, and fabrication yield. We summarize numerical and experimental results related to the development of a cell-based design in the ADP2, which features a unit cell size reduced to 30-µm square and up to four strip line tracks in the unit cell underneath the logic gates. The ADP LSIs can achieve ∼10 times the device density and double the operating frequency with the same power consumption per junction as conventional LSIs fabricated using the Nb four-layer process. We report the design and test results of RDP processor prototypes using the ADP2 cell library. The RDP processors are composed of many arrays of floating-point units (FPUs) and switch networks, and serve as accelerators in a high-performance computing system. The prototypes are composed of two-dimensional arrays of several arithmetic logic units instead of FPUs. The experimental results include a successful demonstration of full operation and reconfiguration in a 2×2 RDP prototype made up of 11.5k junctions at 45GHz after precise timing design. Partial operation of a 4×4 RDP prototype made up of 28.5k-junctions is also demonstrated, indicating the scalability of our timing design.