Recently, we proposed a new data-path architecture, named a large-scale reconfigurable data-path (LSRDP), based on single-flux-quantum (SFQ) circuits, to establish a fundamental technology for future high-end computers. In this architecture, a large number of SFQ floating-point units (FPUs) are used as core components, and their high performance and low power consumption are essential. In this research, we implemented an SFQ half-precision bit-serial floating-point multiplier (FPM) with a target clock frequency of 50GHz, using the AIST 10kA/cm2 Nb process. The FPM was designed, based on a systolic-array architecture. It contains 11,066 Josephson junctions, including on-chip high-speed test circuits. The size and power consumption of the FPM are 6.66mm × 1.92mm and 2.83mW, respectively. Its correct operation was confirmed at a maximum frequency of 93.4GHz for the exponent part and of 72.0GHz for the significand part by on-chip high-speed tests.

This is a review of our high-Tc superconductor (HTS) sampler development. The design and experimental demonstration of a Josephson sampler circuit based on YBa2 Cu3Ox(YBCO)/PrBa2Cu3Ox/YBCO ramp-edge junctions is described. The sampler circuit contains five edge junctions with a stacked YBCO groundplane and is based on single-flux quantum (SFQ) operations. Computer simulation results show that the time resolution of the sampler circuit depends strongly on the IcRn product of the junction and can be reduced to a few picoseconds with realistic parameter values. The edge junctions were fabricated using an in-situ process in which a barrier and a counter-electrode layer are deposited immediately after the edge etching without breaking the vacuum. The in-situ process improved the critical current uniformity of the junctions to 1σ20% in twelve 4-µm-width junctions. An YBCO groundplane was placed on the junctions in a multilayer structure we call the HUG (HTS cricuit with an upper-layer groundplane) structure. The inductance of YBCO lines was reduced to 1 pH per square without junction-quality degradation in the HUG structure. SFQ current-pulse generation, SFQ storage, and SFQ readout in the circuit have been confirmed by function tests using 3-kHz pulse currents. The successful operation of the sampler circuit has been demonstrated by measuring a signal-current waveform at 50K.

We have studied an in situ edge preparation process and the effect of a substrate rotation during the edge preparation in order to improve the uniformity and electrical characteristics of high-Tc edge-type Josephson junctions. The improved YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox edge junctions showed small 1σ-critical current spreads as low as 10% for 12 junctions. We have confirmed that the spreads do not increase significantly by adding groundplane over the junctions. In this paper, we will describe these processes developed for the fabrication of high-Tc superconducting integrated circuits.

We developed an Nb-based fabrication process for single flux quantum (SFQ) circuits in a Japanese government project that began in September 2002 and ended in March 2007. Our conventional process, called the Standard Process (SDP), was improved by overhauling all the process steps and routine process checks for all wafers. Wafer yield with the improved SDP dramatically increased from 50% to over 90%. We also developed a new fabrication process for SFQ circuits, called the Advanced Process (ADP). The specifications for ADP are nine planarized Nb layers, a minimum Josephson junction (JJ) size of 11 µm, a line width of 0.8 µm, a JJ critical current density of 10 kA/cm2, a 2.4 Ω Mo sheet resistance, and vertically stacked superconductive contact holes. We fabricated an eight-bit SFQ shift register, a one million SQUID array and a 16-kbit RAM by using the ADP. The shift register was operated up to 120 GHz and no short or open circuits were detected in the one million SQUID array. We confirmed correct memory operations by the 16-kbit RAM and a 5.7 times greater integration level compared to that possible with the SDP.

A single flux quantum (SFQ) logic cell library has been developed for the 10 kA/cm2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5 kA/cm2 to 10 kA/cm2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400 GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100 GHz.

We describe the recent progress on a Nb nine-layer fabrication process for large-scale single flux quantum (SFQ) circuits. A device fabricated in this process is composed of an active layer including Josephson junctions (JJ) at the top, passive transmission line (PTL) layers in the middle, and a DC power layer at the bottom. We describe the process conditions and the fabrication equipment. We use both diagnostic chips and shift register (SR) chips to improve the fabrication process. The diagnostic chip was designed to evaluate the characteristics of basic elements such as junctions, contacts, resisters, and wiring, in addition to their defect evaluations. The SR chip was designed to evaluate defects depending on the size of the SFQ circuits. The results of a long-term evaluation of the diagnostic and SR chips showed that there was fairly good correlation between the defects of the diagnostic chips and yields of the SRs. We could obtain a yield of 100% for SRs including 70,000JJs. These results show that considerable progress has been made in reducing the number of defects and improving reliability.

We developed a Nb 4-layer process for fabricating superconducting integrated circuits that involves using caldera planarization to increase the flexibility and reliability of the fabrication process. We call this process the planarized high-speed standard process (PHSTP). Planarization enables us to flexibly adjust most of the Nb and SiO2 film thicknesses; we can select reduced film thicknesses to obtain larger mutual coupling depending on the application. It also reduces the risk of intra-layer shorts due to etching residues at the step-edge regions. We describe the detailed process flows of the planarization for the Josephson junction layer and the evaluation of devices fabricated with PHSTP. The results indicated no short defects or degradation in junction characteristics and good agreement between designed and measured inductances and resistances. We also developed single-flux-quantum (SFQ) and adiabatic quantum-flux-parametron (AQFP) logic cell libraries and tested circuits fabricated with PHSTP. We found that the designed circuits operated correctly. The SFQ shift-registers fabricated using PHSTP showed a high yield. Numerical simulation results indicate that the AQFP gates with increased mutual coupling by the planarized layer structure increase the maximum interconnect length between gates.

We have developed a planarization method applicable to large-scale superconductive Nb device fabrication. A planarized multi-layer wiring structure is obtained independently of the wiring size (width, length, and density) by combining three steps for fabricating an SiO2 insulator layer: bias-sputtering, chemical mechanical polishing, and etching with a reversal mask. Fabricated three-level wiring structures, consisting of 200- or 300-nm-thick Nb and SiO2 layers, had excellent layer flatness, and the leakage current (< 0.1 µA/cm2) between the Nb layers was sufficiently low. Two hundred chains of stepwise and stacked contacts yielded a sufficiently large critical current, typically more than 10 mA at 4.2 K.

This review provides a current overview of the fabrication processes for superconducting digital circuits at CRAVITY (clean room for analog and digital superconductivity) at the National Institute of Advanced Industrial Science and Technology (AIST), Japan. CRAVITY routinely fabricates superconducting digital circuits using three types of fabrication processes and supplies several thousand chips to its collaborators each year. Researchers at CRAVITY have focused on improving the controllability and uniformity of device parameters and the reliability, which means reducing defects. These three aspects are important for the correct operation of large-scale digital circuits. The current technologies used at CRAVITY permit ±10% controllability over the critical current density (Jc) of Josephson junctions (JJs) with respect to the design values, while the critical current (Ic) uniformity is within 1σ=2% for JJs with areas exceeding 1.0 µm2 and the defect density is on the order of one defect for every 100,000 JJs.