Three custom LSIs for EB60, a direct wafer exposure electron beam system, have been developed using 0.8 µm BiCMOS and SST bipolar technologies. The three LSIs are i) a shot cycle control LSI for controlling each exposure cycle time, ii) a linear matrix computation LSI for coordinate modification of the exposure pattern data, and iii) a position calculation LSI for determining the precise position of the wafer. These LSIs allow the deflection corrector block of the revised EB60 to be realized on a single board. A new adaptive pipeline control technique which optimizes each shot period according to the exposure data is implemented in the shot-cycle control LSI. The position calculation LSI implements a new, highly effective 2-level pipeline exposure technique, the levels refer to major-field-deflection and minor-field-deflection. The linear-matrix computation LSI is designed not only for the EB60 but also for a wide variety of parallel digital processing applications.

A high resolution iterative algorithm for estimating the direction-of-arrival of multiple wide band sources is proposed in this paper. For equally spaced array structure, two Unitary Transform based approaches are proposed in frequency domain for signal subspace processing in both coherent multipath and incoherent environment. Given a priori knowledge of the initial estimates of DOA, with proper spatial prefiltering to separate multiple groups of closely spaced sources, our proposed algorithm is shown to have high resolution capability even in coherent multipath environment without reducing the angular resolution, compared with the use of subarray. Compared with the conventional algorithm, the performance by the proposed algorithm is shown by the simulations to be improved under low Signal to Noise Ratio (SNR) while the performance is not degraded under high SNR. Moreover the computation burden involved in the eigencomputation is largely reduced by introducing the Pesudo-Hermitian matrix approximation.

We fabricated mixed-signal ICs (MSICs) using wafer-bonded SOI devices with a film several microns thick. We found the MOSFETs on wafer-bonded SOI had characteristics as good as those on a conventional wafer provided the active Si layer is more than 2 µm thick. We fabricated a 16-bit SOI-CMOS delta-sigma A/D converter that suppressed digital noise interference via the substrate. We also fabricated a rectifier-merged SOI-BiCMOS circuit. The resulting characteristics were good, and not possible using conventional junction isolation. Our results suggest that SOI-based isolation is a key technology in integrating devices and systems on a single chip.

This paper describes a new soft-error-immune SICOS upward transistor memory cell suitable for ultra-high-speed bipolar RAMs. A cell size of 180 µm2, significantly smaller than the 500 µm2 in the conventional upward transistor cell, is achieved by marging an upward transistor and a Shottky barrier diode. A new very thin polysilicon resistor and 0.5-µm U-groove isolated SICOS technology are used to furher reduce cell size. The memory cell is about 105 times as immune to soft errors as downward transistor cells. A simulation shows that a 256-Kbit RAM with a write cycle time below 3 ns can be made using this memory cell.

A new design method is proposed for realizing a hypercube network (HC) structured multicomputer system on a wafer using wafer-scale integration (WSI). The probability that an HC can be constructed on a wafer is higher in this method than in the conventional method; this probavility is called a construction probability. We adopt the FUSS method for the processor (PE) address allocation in our desing because it has a high success probability in the allocation. Even if the design renders the address allocation success probalility hegher, it is of no use if it makes either the maximum wiring length between PEs or the array size (wiring area) larger. A new wiring channel structure capable of connecting PEs on a wafer is proposed in this paper, where a channel, called a basic channel, is used. A one-dimensional-array sub-HC row network (RN) or column networks (CN) can be constructed using the basic channel. The sub-HC construction method, which embeds wirings into the basic channel, is also proposed. It requires almost the same wiring width as conventional method. However, it has an advantage in that maximum wiring length between PEs can be about half that of the conventional method. If PEs must be shifted in the case of PE defects, they can be shifted and connected to the basic channel using other PE shifting channels, and an RN or CN can be constructed. The maximum wiring length between PEs, array size, and construction probability will also be derived, and it will be shown that the proposed design is superior to the conventional one.

A one-by-four static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was designed to operate at a bias condition that gave a maximum cutoff frequency fT and a maximum oscillation freqency fmax. The fT and fmax applied to the divider were 68 GHz and 56 GHz, respectively. As a result of the tests, the circuit operated up to 34.8 GHz at a power supply voltage of 9 V and power dissipation of 495 mW. A low minimum input signal power level of 0 dBm was also achieved.

A design system for a special purpose processor executing algorithms described by high level language is discussed. The system can generate an optimized architecture for the processor and also supply a specialized high level language compiler for the processor. A new optimization procedure is introduced to find effective functional blocks that can contribute to the improvement of performance. Functional blocks are found by simulation of the frequently appearing patterns of execution in the algorithm and used to yield a useful combined instruction.

Electromagnetic interference on a bus wiring configuration of the ISDN basic interface using metallic telecommunication lines is studied. A simple circuit to simulate terminal equipment unbalance about earth is developed for measurement purposes, based on the fact that the unbalance weakens the withstanding capability against interference. The electromagnetic interferences from low-voltage supply lines, analog telephone lines and broadcasting waves are evaluated by experiments using the circuit. The interference is measured by both induced voltage on the interface line and the error rate of the transmission signal line. Consequently, it is clarified that the basic interface is disturbed by the induced voltage, because the terminal equipment in the CCITT Recommendation I.430 has too large an unbalance about earth to maintain transmission quality. Adding to this, countermeasures to reduce interference are proposed.

Based on the semiclassical theory, we deduce the expressions of stimulated absorption, stimulated amplification and threshold by using density matrix equation in the Er3+-doped fibers. Meaningful results have been given and some phenomena occuring in experiments are explained theoretically.