High output power AlGaN/GaN metal-insulator-semiconductor (MIS) hetero-junction field effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High temperature chemical vapor deposition (HT-CVD) grown SiN as a gate insulator improves the breakdown characteristics which enables the operation at high drain voltage of 55 V. The device exhibits high drain current of 1.1 A/mm free from the current collapse and high RF gain of 10.4 dB. The amplifier module developed AlGaN/GaN MIS-HFET with the gate width of 5.4 mm exhibits an output power of 10.7 W and a linear gain of 4 dB at 26.5 GHz. The resultant high output power is very promising for long-distance communication at millimeter-wave in the future which would enable high speed and high density data transmission.

A carbonaceous thin film was deposited on a tungsten single emitter by electrolysis of liquid methanol. The carbonaceous single emitter was thermally treated under vacuum conditions, and changes in its field emission characteristics were examined. The field emission characteristics obeyed the Fowler–Nordheim relationship for all annealing temperatures. The turn-on voltage decreased from 1640 V to 790 V with annealing up to 1373 K.

We studied the interaction of Bis-diethylaminosilane (SiH2[N(C2H5)2]2, BDEAS) with a hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory (DFT). BDEAS was adsorbed on the Si surface and reacted with the H atom of hydroxyl (-OH) to produce the di-ethylaminosilane (-SiH2[N(C2H5)2], DEAS) group and di-ethylamine (NH(C2H5)2, DEA). Then, DEAS was able to react with another H atom of -OH to produce DEA and to form the O-(SiH2)-O bond at the inter-dimer, inter-row, or intra-dimer site. Among the three different sites, the intra-dimer site was the most probable when it came to forming the O-(SiH2)-O bond.

We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show a hole conduction behavior, and the gate sensitivity of 0.0034 µA/V, which is reasonable with the size of the strip (510 µm2). After the adsorption of 30 base pairs single-stranded poly (dT) DNA molecules, the conductance and gate operation of the graphene FET exhibit almost 11% and 18% decrease from those of the bare graphene FET device. The observed change may suggest a large sensitivity for a small enough (nm size) graphene strip with larger semiconducting property.

Thin films of a divinyl derivative of tetraphenyldiaminobiphenyl DvTPD were prepared by vapor deposition followed by annealing. After annealing at 200°C for 1 h, the film became practically insoluble to organic solvents due to polymerization. Electrical characteristics of the films were measured by current-voltage measurement, time-of-flight measurement, and dielectric measurement. It was found that the hole mobility of DvTPD decreases when the film is polymerized. As a consequence of the decrease of hole mobility, carrier balance in the emissive layer of an organic light emitting diode (OLED) was improved, leading to a higher quantum efficiency and a pure emission spectrum. The dielectric measurement also confirmed the high thermal stability of the polymerized film.

The nanoporosity installed in conjugated polymer films prepared by electrophoretic deposition makes it difficult to measure the amount of polymer deposited on a substrate. Here, an alternative approach, the estimation of material efficiency of the electrophoretic deposition from the optical absorption spectra of the residual suspensions has been studied. The ultimate recovery rate, which becomes smaller in suspensions with lower acetonitrile content, does not depend on the deposition voltage. The light scattering by the colloidal particles seems to be absent in residual suspensions after a deposition long enough to reach the ultimate recovery rate, indicating the exhaustion of the colloidal particles. Although the deposition rate of the polymer markedly lowers upon coating of the deposition electrode with PEDOT, the ultimate recovery rate remains unchanged. These results suggest that the material efficiency in this deposition method is limited by the generation rate of the colloidal particles in the suspension.

A HfO2 as the charge-storage layer with the physical thickness thinner than 4 nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4 nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.

The synthesis of single- and double-wall carbon nanotubes by gas flow-modified, catalyst-supported chemical vapor deposition (CCVD) is reported. We have investigated the gas flow condition dependence on the synthesis of carbon nanotubes (CNTs) by placing blocks in the CCVD reactor. Carbon nanotubes having large diameters are preferentially grown under turbulent flow conditions. This indicates that the diameter distribution of CNTs can be controlled by modification of the gas flow condition in the CCVD.

Minimizing the residual impurity gases is a key factor for reducing temporal dark image sticking. Therefore, this paper uses a vacuum-sealing method that minimizes the residual impurity gases by enhancing the base vacuum level, and the resultant change in temporal dark image sticking is then examined in comparison to that with the conventional sealing method using 42-in. ac-PDPs with a high Xe (11%) content. As a result of monitoring the difference in the display luminance, infrared emission, and perceived luminance between the cells with and without temporal dark image sticking, the vacuum-sealing method is demonstrated to reduce temporal dark image sticking by decreasing the residual impurity gases and increasing the oxygen vacancy in the MgO layer. Furthermore, the use of a modified driving waveform along with the vacuum-sealing method is even more effective in reducing temporal dark image sticking.

In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70 showed an elongated inclined columnar structure. Under this condition, a deposition rate of 30 nm/min was realized even at an incidence angle above 70, where most of the Si atoms incident to the substrate were supplied by the Si supply source and the oxygen radical source supplied oxygen radicals and promoted the oxidation of the film.

A persistent current switch (PCS) is used for superconducting applications, such as superconducting magnetic energy storage (SMES) system. The authors have proposed a mechanical switch of Y-Ba-Cu-O (YBCO) bulk as a mechanical PCS. In previous study, the authors have successfully reduced a residual resistance by depositing with metal on contact surface. This paper focused on a current carrying area (called a-spot) on contact surface and presented an effect of deposited metal on electrical contact characteristics in order to clear the contact mechanism. As the results of experiments and simulation using FEM, it became clear that it was effective for reducing the residual resistance from a view point of increasing the a-spot by depositing with metal.

Complex thin oxide films with electro-optic (EO) properties are promising for use in advanced optical devices because of their large EO effect. We developed a method of aerosol deposition (AD) for fabricating EO films. The mechanism for AD is based on the solidification by impact of submicron particles onto a substrate. Since particles in AD films preserve their crystalline structure during the formation of film, epitaxial growth is not necessary for exhibiting the EO effect. Highly transparent Pb(Zr, Ti)O3 films, which have acceptable transmittance loss for use as optical devices, were directly deposited on glass substrates by AD. We found the Pb(Zr, Ti)O3 film by AD produced a fairly high EO coefficient (>150 pm/V), approximately 10 times larger than that of LiNbO3. A Fabry-Perot (FP) optical modulator was developed with EO films fabricated by AD. We demonstrated the modulation of optical intensity with an electrical field applied to an EO film made of ferroelectric Pb (Zr, Ti)O3.

Our investigation of diamond-like carbon (DLC) nano-springs with a 130 nm spring-section diameter, which were fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD), showed for the first time that nanosprings can be stretched. We observed large displacements of the FIB-CVD nanosprings using in situ optical microscopy; in other words, the nanosprings showed behavior similar to that of macroscale springs. In addition, we investigated the dependence of the spring constant of DLC nanosprings on spring diameter. The spring constants, measured using commercially available cantilevers, ranged from 0.47 to 0.07 N/m. The diameter dependence of spring constant can be accurately expressed by the conventional formula for a coil spring. The estimated shear modulus of the DLC nano-springs was about 70 GPa. This value is very close to the value of conventional coil springs made of steel. Furthermore, we measured the stiffness of a DLC nanospring annealed at 1000 in vacuum. The stiffness was decreased to approximately half of the stiffness of the nanospring without annealing.

HfOxNy thin films formed by the electron cyclotron resonance (ECR) Ar/N2 plasma nitridation of HfO2 films were investigated for high-k gate insulator applications. HfOxNy thin films formed by the ECR Ar/N2 plasma nitridation (60 s) of 1.5-nm-thick HfO2 films, which were deposited on chemically oxidized Si(100) substrates, were found to be effective for suppressing interfacial layer growth or crystallization during postdeposition annealing (PDA) in N2 ambient. After 900 PDA of for 5 min in N2 ambient, it was found that HfSiON film with a relatively high dielectric constant was formed on the HfOxNy/Si interface by Si diffusion. An equivalent oxide thickness (EOT) of 2.0 nm and a leakage current density of 1.010-3 A/cm2 (at VFB-1 V) were obtained. The effective mobility of the fabricated p-channel metal-insulator-semiconductor field-effect transistor (MISFET) with the HfOxNy gate insulator was 50 cm2/Vs, and the gate leakage current of the MISFET with the HfOxNy gate insulator was found to be well suppressed compared with the MISFET with the HfO2 gate insulator after 900 PDA because of the nitridation of HfO2.

The 5-cm-diameter double-sided YBa2Cu3O7 (YBCO) films were prepared by metal organic deposition (MOD) using a commercially available metal-naphthenate coating solution. Firstly, YBCO film was prepared by MOD on one side of a double-side-polished 5-cm-diameter LaAlO3 substrate. Secondly, another side was similarly coated with YBCO by MOD. After the latter processing, degradation of average Jc value in the first side was not observed; but the fluctuation of critical current density Jc slightly increased. The double-sided YBCO films showed average Jc values of 0.8-1.0 MA/cm2 at 77 K and microwave surface resistances Rs(12 GHz) of 0.86-1.07 mΩ at 70 K.

A new technique incorporating combinatorial deposition to develop thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. In comparison with development using conventional r.f. magnetron sputtering, the atomic ratios of Si and Ge as well as the Mn content in Zn2Si1-XGeXO4:Mn thin film phosphors could be more efficiently optimized in order to obtain the highest intensity in electroluminescent and photoluminescent emissions. High luminances of 11800 and 1536 cd/m2 were obtained in Zn2Si0.6Ge0.4O4:Mn thin-film electroluminescent devices fabricated under optimized conditions and driven at 1 kHz and 60 Hz, respectively.

Thin film of polyurethane having metal complex was prepared by vapor deposition polymerization of bis (5,8-dihydroxyquinoline) zinc (ZnHq2) and 4, 4'-diphenylmethane diisocyanate monomers. The film was applied for the electron-transporting emissive layer of the organic light emitting diode. The deposition-polymerized film was found to give higher quantum efficiency of luminescence than the ZnHq2 monomer film.

Indium tin oxide (ITO) films were deposited at a temperature below 50 by a low-voltage sputtering system. The sputtering voltage was fixed at 100 V and Ar, Kr, and Xe were used as the sputtering gases. Compared with the sputtering in Ar gas, the sputtering in Kr or Xe gas caused a significant suppression of crystallization of the deposited film and resulted in the formation of amorphous films. These films had much lower resistivities than the films deposited using Ar gas, since the Hall mobility of the films had a larger value. Typical Hall mobility and carrier density are 50 cm2/Vsec, and 51020 cm-3, respectively. This improvement was attributable to the reduction of high-energy particle bombardment to the film surface in the sputtering. These films are stable at a temperature below 150, and crystallization occurs at a temperature above 150.

The process mapping of the ALD process of HfO2 using HfCl4 and H2O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H2O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO2/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.

A compact high-temperature superconducting (HTS) bandpass filter (BPF) using coplanar waveguide (CPW) meander-line parallel-circuited resonators is proposed for microwave receiver applications. The design theory is presented based on a conventional filter theory with J-inverters. Also, analytical and numerical studies of the meander-line resonator are carried out in terms of equivalent circuit values, the resonant frequency, and the unloaded Q. Two- and four-stage 0.05 dB ripple Chebyshev BPFs at 2 GHz with relative bandwidth 60 MHz are fabricated with the metalorganic deposition (MOD)-derived YBCO films on LaAlO3 substrates and their performance are demonstrated. The measured frequency characteristics and the unloaded quality factors agree well with the theoretical and numerical results and the validity of the design theory is confirmed.