We demonstrate a large nonlinear optical response of GaAs thin films using degenerate four-wave mixing (DFWM) with picosecond pulses. The obtained DFWM signal is thickness-dependent and peaks at around 110 nm. The nonlocal theory fully explains these results.

A systematic continuous data placement scheme on distributed multi-zone disks is developed for video on demand. The proposed scheme makes use of constant read time concept, i. e. , each video stream has the same access time in each service round when serving the request. The developed scheme maximizes not only the averaged data transmitted rate, but also the number of simultaneous accesses. The scheme consists of the following components. First we developed an algorithm that reorganizes the multi-zone disk into several logical zones in the sense that the averaged disk throughput is maximum. Second, a sequential data access method was developed that takes disk loading balance into account. Thus, at each service round, the total amount of data transmitted is a constant. Third, we introduce the idle round technique to reduce the buffer size required at the client site for VBR video stream. As a result, admission control is enforced in an efficient manner. Finally we perform experimental tests to evaluate the performance of the proposed scheme. The results indicate the value of the proposed scheme.

In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).

This paper proposes a Space-Time Object Model, an object oriented model that possesses space and time management mechanisms. The goal of this object model is to provide a common software infrastructure for implementing large-scale moving object simulations efficiently, such as car traffic simulations and disaster evacuation simulations, using a direct mapping scheme on a parallel and distributed computing environment. In this object model, the software infrastructure provides two principal functions, "Space Management" and "Time Management," which allows programmers to focus on application programming instead of parallel programming. Although there are several known infrastructure software, which provide the environment needed to develop and execute parallel and distributed simulations, they only provide a "Time Management" mechanism. In this paper, we present a Space-Time Object Model and an overview of a program called OSim, which is an implementation of the Space-Time Object Model. Then, we demonstrate the applicability and efficiency of this model by introducing the overview and evaluation results of a parallel car traffic simulation system using OSim.

A novel optical technique for the measurement of temperature is proposed. This is accomplished by depositing alternating 1/4 wave layers of silicon nitride and silicon-rich silicon nitride at the end of an optical fiber. These layers of alternating refractive index form the equivalent of a Bragg grating of a high temperature material. When the fiber and the Bragg grating are heated, the Bragg stack expands, and there is a change in the reflective peak wavelength of this wave stack. Thus, the wavelength of peak reflectivity is a function of temperature. Currently, the 15 nm spectral width of the Bragg stacks is achieved in our laboratory, which is conveniently monitored with a CCD solid state spectrometer and the temperature sensor probes can be also multiplexed at separated specific reflection wavelength. In the experiment, the temperatures in excess of 1,100 centigrade have been measured with a resolution of less than 3 centigrade degree.

The features of the method of moment (MoM) and the finite difference time domain (FDTD) method for numerical analysis of the electromagnetic scattering problem are presented. First, the integral equations for the conducting wire, conducting plane and the dielectric materials are described. Importance to ensure the condition of the continuity of the current of the scatterers is emphasized and numerical examples for a conducting structure involving a junction of wire segment and planar segment is presented. Finally, the advantages and the disadvantages of the FDTD method are discussed.

Thin-film slot-array receiving antennas fed by coplanar waveguide (CPW) were fabricated on fused quartz substrates, and the antenna properties were investigated at 700 GHz. It was confirmed that the transmission efficiency of CPW was 0.83/λm, and the rate of radiated power from a slot antenna was 0.5 at 700 GHz. The fabricated antennas worked as expected from the theory based on the transmission line model, and the two-dimensional 83 slot-array antenna fed by CPW increased the power gain by 11 dB over a single-slot antenna. The power gain of the antenna was 13 dBi and the aperture efficiency was 40% when the 700 GHz-submillimeter wave was irradiated through the substrate.

A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

A timing synchronization is required in the mobile station to determine the correct transmission timing of the mobile-to-base bursts. In this letter, a timing synchronization technique using the reliability check and smoothing algorithm is proposed for the GSM receiver. The reliability check scheme extends the usefulness of this algorithm into low SNR region. And also smoothing algorithm is carried out by a first-order filter with an asymmetric step size. Simulation results show that the proposed algorithm is adequate for timing recovery of GSM modem.

The objective of thinning is to reduce the amount of information in image patterns to the minimum needed for recognition. Thinned image helps the extraction of important features such as end points, junction points, and connections from image patterns. The ultimate goal of parallel algorithms is to minimize the execution time while producing high quality thinned image. Though much research has been performed for parallel thinning algorithms, there has been no systematical approach for comparing the execution speed of parallel thinning algorithms. Several rough comparisons have been done in terms of iteration numbers. But, such comparisons may lead to wrong guides since the time required for iterations varies from one algorithm to the other algorithm. This paper proposes a formal method to analyze the performance of parallel thinning algorithms based on PRAM (Parallel Random Access Machine) model. Besides, the quality of skeletons, robustness to boundary noise sensitivity, and execution speed are considered. Six parallel algorithms, which shows relatively high performance, are selected, and analyzed based on the proposed analysis method. Experiments show that the proposed analysis method is sufficiently accurate to evaluate the performance of parallel thinning algorithms.

Because of non-negligible ISI due to the Gaussian filter and delay spread in the GSM system, an equalizer is required. In this letter, a joint sliding window channel estimation and timing adjustment method is proposed for maximum likelihood sequence equalizer. And also a smoothing algorithm is presented in order to improve the equalizer performance. This smoothing scheme utilizes a variant of LMS algorithm to tune the channel coefficient estimates. Simulation results show that the proposed scheme is adequate for channel estimation of the adaptive equalizer.

Gd2O2S:Tb phosphor thin films have been prepared using the simple technique of electron beam evaporation for large area display applications. The photoluminescence and excitation spectra measurement of Gd2O2S:Tb phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2S lattice at gadolinium sites. Relatively efficient electroluminescence is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.

The complex conductivities of high Tc superconducting YBa2Cu3Ox thin films have been studied using the coplanar waveguide resonator technique. In order to evaluate the magnetic penetration depth precisely, we measured the temperature dependence of the resonant frequency and compared it with the numerical results self-consistently. The observed temperature dependence of the complex conductivities is shown to be able to distinguish the effects of the weaklink from the intrinsic property of the grain of an epitaxial thin film and demonstrate the weakly coupled grain model of YBa2Cu3Ox thin films.

In a variety of communication systems, the multipath propagation due to various reflections is often encountered. In this paper, the directions-of-arrival (DOA) estimation of the cyclostationary coherent signals is investigated. A new approach is proposed for estimating the DOA of the coherent signals impinging on a uniform linear array (ULA) by utilizing the spatial smoothing (SS) technique. In order to improve the robustness of the DOA estimation by exploiting the cyclic statistical information sufficiently and handling the coherence effectively, we give a cyclic algorithm with multiple lag parameters and the optimal subarray size. The performance of the presented method is verified and compared with the conventional methods through numerical examples.

Attenuated total reflection (ATR) properties and scattered light properties were measured for Ag thin films and arachidic acid (C20) Langmuir-Blodgett (LB) ultrathin films on the Ag thin films to obtain the information about their complex dielectric constants and surface roughness utilizing an excited surface plasmon polariton. The complex dielectric constants for the Ag thin films and the C20 LB films were obtained by fitting the calculated ATR curves to the experimental ones. The surface roughnesses of these films were estimated by the angular distribution of the scattered light assuming the Gaussian function as an autocorrelation function and a linear superposition of roughness spectra. The angular spectra strongly depended on the roughness parameters: the transverse correlation length σ and the surface corrugation depth δ. The experimental angular distributions were explained by some pairs of σ and δ. It was suggested that the surface roughness of the C20 LB films changed with the number of monolayers since the angular spectra varied with the number of the C20 LB monolayers on the Ag films. It is thought that the measurement of the scattered light is useful to evaluate surface roughnesses of LB ultrathin films.

In live multimedia applications with multiple videos, it is necessary to develop an efficient mechanism of multiplexing several MPEG video streams into a single stream and transmitting it over network without wasting excessive bandwidth. In this paper, we present an efficient multiplexing and traffic smoothing scheme for multiple variable bit rate (VBR) MPEG video streams in live video applications with finite buffer sizes. First, we describe the constraints imposed by the allowable delay bound for each elementary stream and by the multiplexer/receiver buffer sizes. Based on these constraints, a new multiplexing and traffic smoothing scheme is designed in such a way as to smooth maximally the multiplexed transmission rate by exploiting temporal and spatial averaging effects, while avoiding the buffer overflow and underflow. Through computer experiments based on an MPEG-coded video trace of Star-wars, it is shown that the proposed scheme significantly reduces the peak rate, coefficient of variation, and effective bandwidth of the multiplexed transmission rate.

Using transmission electron microscopy (TEM), we studied structural defects in a Sr0. 7Bi2. 3Ta2O9 (SBT) thin film to be used for ferroelectric memory devices. We examined the effects of the substrate, crystal continuity, and dislocations in crystals as major causes of defects. For this study, we used an SBT thin film grown from an alkoxide solution. Since crystal growth was hardly influenced by the substrate, the substrate had little influence on the occurrence of defects resulted in misfit of lattice constant. Regions of partially low crystal continuity were observed in the SBT thin film. In these regions, the orientation was still uniform, but the continuity of the crystal grain was low because of the defects. In addition, variation in contrast was observed in the crystals, however, no obvious variation in chemical composition was found in this region of varying contrast. Therefore, the contrast variation is considered to be attributed to the dislocation. Such a dislocation was found to be occurred in the direction of the (2010) plane in many instances. The defects in the SBT film were also confirmed by the TEM observation.

The crystallization process of Sr0. 7Bi2. 3Ta2O9 (SBT) ferroelectric thin films with different crystal orientations formed by chemical liquid deposition using an alkoxide precursor was investigated. One film showed strong c-axis orientation (a-type film), while another shows scarcely any c-axis orientation (b-type film). We report that the crystallization process was the same even when crystal orientation differed. Thin films first change from amorphous to fluorite fine grains; the fluorite grains then change to bismuth layer-structure grains. The different orientation of the SBT films is not caused by different crystallization process. Both SBT films with different crystal orientations consist of fine fluorite grains after 650 heat-treatment. Their leakage current density characteristics differ, however. The leakage current density of the a-type film was independent of the electric field, and showed a low value of 10-8 A/cm2. The leakage current density of the b-type film, however, was dependent on the electric field, and increased continuously with the increasing electric field. After 700 heat-treatment, both films consist of large grains with bismuth layer-structure and fine fluorite grains. The matrix of both films contains large grains with bismuth layer-structure that determines the leakage current density characteristics. Since the fluorite grain size after a 700 heat-treatment is the same as that after 650 heat-treatment, nucleation is predominant at the structural phase boundary from amorphous to fluorite. The bismuth layer-structure grains are large and single-crystal grains after both a 700 and 800 heat-treatment. Increased grain size predominates at the structural phase boundary from fluorite to bismuth layer-structure grains. Clearly, ferroelectric SBT films with bismuth layer-structure are crystallized in two steps, each having a different predominant crystal growth mechanism.

Pb(ZrxTi1-x)O3 (PZT) thin films were prepared on various electrodes. When Ir system materials were used as electrodes, fatigue properties of PZT thin films were improved. Moreover, in the case of the PZT thin film on an Ir/IrO2 electrode, not only fatigue but imprint properties were clearly improved. We could find these improvements were caused by good barrier effect of IrO2 from secondary ion mass spectroscopy (SIMS) analysis. By applying these Ir system electrodes, we fabricated stacked capacitors on polycrystalline silicon (poly-Si) plugs. In spite of high temperature thermal processing, we found poly-Si plugs were ohmically connected with the bottom electrodes of the capacitors from hysteresis measurements and I-V characteristics, and could greatly expect them for practical use.

To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x 0. 32) showed ferroelectricity at room temperature. The maximum value of remanent polarization of 2Pr = 0. 38 C/m2 was obtained at the composition of x = 0. 70 in this study.