This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.

The analog inverter for realization of the NOT function is the indispensable circuit element in the voltage-mode analog and digital signal processing. In this paper, we propose a novel analog inverter composed of only two neuron-MOS transistors. The analog inverter has the weighted negative feedback mechanism to operate both of neuron-MOS transistors under the saturation region in all input ranges. In verification using HSPICE simulations, the analog inverter performs the high linearity with errors of approximately 40 [mV] in all input ranges, particularly errors of less than 19 [mV] in more than 90% of input ranges. And, the maximum power consumption of the analog inverter is less than 1.5 [µW] although a peak of a standard CMOS inverter is around 30 [µW] under the supply voltage of 3.0 [V]. These good stability and results are produced by the negative feedback. Furthermore, fabrication costs of the analog inverters can be kept at the minimum because neuron-MOS transistors can be actualized in a conventional CMOS process without any additional process. For applications of the analog inverter, the voltage comparator with high noise margins is designed and is applied to the two-input MAX and the two-input MIN circuits in the voltage-mode. The MAX and the MIN circuits for realization of the MAX and the MIN functions, respectively, can be composed of total ten transistors each. They also perform well in verifications. On the basis of the proposed circuits, almost all of voltage-mode multi-valued logic circuits with high-performance can be realized like present binary logic systems. And, the proposed circuits can give full play to the high linearity and advantages for the arbitrary transformation of signal forms in the analog signal processing such as the fuzzy control.

This paper describes the Fractional-N All Digital Frequency Locked Loop (ADFLL) with Robustness for PVT variation and its application for the microcontroller unit. The conventional FLL is difficult to achieve the required specification by using the fine CMOS process. Especially, the conventional FLL has some problems such as unexpected operation and long lock time that are caused by PVT variation. To overcome these problems, we propose a new ADFLL which uses dynamic selecting digital filter coefficients. The proposed ADFLL was evaluatied through the HSPICE simulation and fabricating chips using a 0.13 µm CMOS process. From these results, we observed the proposed ADFLL has robustness for PVT variation by using dynamic selecting digital filter coefficient, and the lock time is improved up to 57%, clock jitter is 0.85 nsec.

In this paper, a threshold voltage (VT) cancellation circuit for neuron-MOS (νMOS) analog circuits is described. By connecting the output terminal of this circuit with one of the input terminals of the νMOS transistor, cancellation ofVT is realized. The circuit has advantages of ground-referenced output and is insensitive to the fluctuation of bias and supply voltages. Second-order effects, such as the channel length modulation effect, the mobility reduction effect and device mismatch of the proposed circuit are analyzed in detail. Low-power and high-swing νMOS cascode current mirror is presented as an application. Performance of the proposed circuits is confirmed by HSPICE simulation with MOSIS 2. 0 µ p-well double-poly and double-metal CMOS device parameters.

In this paper, we propose the novel low voltage CMOS current mode reference circuit. It reduces the minimum supply voltage by consisting the subthreshold two stage operational amplifier (OPAMP) which is regarded as the combination of the proportional to absolute temperature (PTAT) and the complementary to absolute temperature (CTAT) current generators. It makes possible to implement without extra OPAMP. This proposed circuit has been designed and evaluated by SPICE simulation using TSMC 65nm CMOS process with 3.3V (2.5V over-drive) transistor option. From simulation results, the line sensitivity is as good as 0.196%/V under the condition that the range of supply voltage (VDD) is wide as 0.6V to 3.0V. The temperature coefficient is 71ppm/ under the condition that the temperature range is from -40 to 125 and VDD=0.6V. The power supply rejection ratio (PSRR) is -47.7dB when VDD=0.6V and the noise frequency is 100Hz. According to comparing the proposed circuit with prior current mode circuits, we could confirm the performance of the proposed circuit is better than that of prior circuits.

In this paper, we propose a learning fuzzy network (LFN) which can be used to implement most of fuzzy logic functions and is much available for hardware implementations. A learning algorithm largely borrowed from back propagation algorithm is introduced and used to train the LFN systems for several typical fuzzy logic problems. We also demonstrate the availability of the LFN hardware implementations by realizing them with CMOS current-mode circuits and the capability of the LFN systems by testing them on a benchmark problem in intelligent control-the inverted pendulum system. Simulations show that a learning fuzzy network can be realized with the proposed LFN system, learning algorithm, and hardware implementations.

In this paper, a virtual-short circuit which consists of only two MOS transistors operated in the weak-inversion region is proposed. It has the advantages of almost zero power consumption, low voltage operation, small chip area, and no needlessness of bias voltages or currents. The second order effects, such as the device mismatch, the Early effect, and the temperature dependency of the circuit are analyzed in detail. Next, current-controlled and voltage-controlled current sources using the proposed virtual-short circuit are presented as applications. The performance of the proposed circuits is estimated using SPICE simulation with MOSIS 1. 2 µm CMOS device parameters. The results are reported on this paper.

This paper presents a layout-dependent manufacturability for analog integrated circuits. We focus on the relative variability of an input op-amp-pair used in an instrumentation amplifier (in-amp). We propose a subblock-level matching layout style such that subblocks of the op-amp-pair are superimposed aiming to suppress the relative variability dependent on the layout. We fabricate chips according to five superposed layout styles and evaluate the relative variability in terms of the DC-offset, so that we demonstrate the most effective layout style. Besides, we provide a manufacturability simulation methodology to evaluate the in-amp considering the relative variability of the op-amp-pair based on the measurement results. Comparing the simulation result and the performances of fabricated in-amps, we are convinced our methodology can evaluate the layout-dependency of the manufacturability by the simulation.

In this letter, two OTAs with MOSFETs operating in the weak inversion region are proposed. One of the OTAs uses the exponential-logarithm transformation algorithm. Furthermore, the other realizes the high-linearity characteristics due to a small fluctuation of the common-terminal voltage of differential pair. The performance of the proposed OTAs was confirmed by HSPICE simulation.

A direct gradient descent learning algorithm of energy function in Hopfield neural networks is proposed. The gradient descent learning is not performed on usual error functions, but the Hopfield energy functions directly. We demonstrate the algorithm by testing it on an analog-to-digital conversion and an associative memory problems.

This paper describes an MOS charge-mode version of a T-Model neural-based PCM encoder. The neural-based PCM encoding networks are designed, simulated and implemented using MOS charge-mode circuits. Simulation results are given for both the T-Model and the Hopfield model CMOS charge-mode PCM encoders, and demonstrate the T-Model neural-based one performs the PCM encoding perfectly, while the Hopfield one fails to.

In this letter, a linear variable resistor circuit using an FG-MOSFET (floating-gate MOSFET) is proposed. This is based on Schlarmann's variable resistor and is very simple. The advantage of the proposed circuit is a wide-input range. The utility of the proposed circuit was confirmed by HSPICE simulation with 1.2 µm CMOS process parameters. The simulation results are reported in this letter.

In this letter, two kinds of MOS operational transconductance amplifiers (OTAs) based on combiners are presented. Each OTA has the following advantages; one of the proposed OTAs (OTA-1) can be operated at low supply voltage and the other OTA (OTA-2) has wide bandwidth. Through HSPICE simulations with a standard 0.35 µm CMOS device parameters, the operation under the supply voltage of 1.5 V for OTA-1 and the -3 dB bandwidth of several gigahertz for OTA-2 are confirmed.

In this paper, we present a new analog multiplier with wide input range which is achieved by utilizing the variable threshold voltage characteristics of FG-MOSFET's. The performance of the proposed multiplier is evaluated through HSPICE simulation with 2.0 µm CMOS process parameters. From HSPICE simulation, we can find that the proposed multiplier can be operated at the supply voltage of 3.0 V with 3.0 Vp-p input range. Namely, the input voltage range of the multiplier is equal to the supply voltage. The maximum power consumption of the multiplier is 8.8 mW. The THD is 1.36% under the condition that the amplitude of the input signal is 3.0 Vp-p and the frequency is 1 MHz. Under the same condition, the linearity error is less than 0.5%. The -3 dB bandwidth of the proposed multiplier is 23 MHz.

In this letter, we describe a low power current to time converter for wireless sensor networks. The proposed circuit has some advantages of high linearity and wide measurement range. From the evaluation using HSPICE with 0.18 µm CMOS device parameters, the output differential error for the input current variation is approximately 0.1 µs/nA under the condition that the current is varied from 100 nA to 500 nA. The idle power consumption is approximately zero.

This paper describes a new model of multiple-valued immune network based on biological immune response network. The model of multiple-valued immune network is formulated based on the analogy with the interaction between B cells and T cells in immune system. The model has a property that resembles immune response quite well. The immunity of the network is simulated and makes several experimentally testable predictions. Simulation results are given to a letter recognition application of the network and compared with binary ones. The simulations show that, beside the advantages of less categories, improved memory pattern and good memory capacity, the multiple-valued immune network produces a stronger noise immunity than binary one.

In this paper, optimization and verification of the current-mode multiple-valued digit ORNS arithmetic circuits are presented. The multiple-valued digit ORNS is the redundant number system using digit values in the multiple-valued logic and it realizes the full-parallel calculation without any ripple carry propagation. First, the 4-bit addition and multiplication algorithms employing the multiple-valued digit ORNS are optimized through logic-level analyses. In the multiplier, the maximum digit value and the number of modulo operations in series are successfully reduced from 49 to 29 and from 3 to 2, respectively, by the arrangement of addition lines. Next, circuit components such as a current mirror are verified using HSPICE. The proposed switched current mirror which has functions of a current mirror and an analog switch is effective to reduce the minimum operation voltage by about 0.13 volt. Besides an ordinary strong-inversion region, the circuit components operated under the weak-inversion region show good simulation results with the unit current of 10 nanoamperes, and it brings both of the lower power dissipation and the stable operation under the lower supply voltage.

In this letter, we propose high-speed binary to residue converters for moduli 2n, 2n 1 without using look-up table. For integration of residue arithmetic circuit using a signed-digit (SD) number representation with ordinary binary system, the proposed circuits carry out the efficient conversion. Using SD adders instead of ordinary adders that are used in conventional binary to residue converter, the high-speed conversion without the carry propagation can be achieved. Thus, the proposed converter is independent of the size of modulus and can speed up the binary to residue conversion. On the simulation, the conversion delay times are 1.78 ns for modulus 210-1 and 1.73 ns for modulus 210+1 under the condition of 0.6 µm CMOS technology, respectively. The active area of the proposed converter for moduli 210 1 is 335 µm325 µm.

A neuron-MOS transistor (νMOS) is applied to current-mode multi-valued logic (MVL) circuits. First, a novel low-voltage and low-power νMOS current mirror is presented. Then, a threshold detector and a quaternary T-gate using the proposed νMOS current mirrors are proposed. The minimum output voltage of the νMOS current mirror is decreased by VT (threshold voltage), compared with the conventional double cascode current mirror. The νMOS threshold detector is built on a νMOS current comparator originally composed of νMOS current mirrors. It has a high output swing and sharp transfer characteristics. The gradient of the proposed comparator output in the transfer region can be increased 6.3-fold compared with that in the conventional comparator. Along with improved operation of the novel current comparator, the discriminative ability of the proposed νMOS threshold detector is also increased. The performances of the proposed circuits are validated by HSPICE with Motorola 1.5 µm CMOS device parameters. Furthermore, the operation of a νMOS current mirror is also confirmed through experiments on test chips fabricated by VDEC*. The active area of the proposed νMOS current mirror is 63 µm 51 µm.

In this paper, we propose a midpoint-validation method which improves the generalization of Support Vector Machine. The proposed method creates midpoint data, as well as a turning adjustment parameter of Support Vector Machine using midpoint data and previous training data. We compare its performance with the original Support Vector Machine, Multilayer Perceptron, Radial Basis Function Neural Network and also tested our proposed method on several benchmark problems. The results obtained from the simulation shows the effectiveness of the proposed method.