Precise measurements of temperature dependence of the Andreev reflection current for the N–I–S junctions were carried out. Au and Pb were used as N (normal metal) and S (superconducting material), respectively. The experimental results agreed with the analyses based on the Arnold theory.

An emitter–coupled pair with a dynamic bias current and a source–coupled pair with a dynamic bias current are proposed as an exponential–law element and a square–law element that operate as a floating bipolar junction transistor (BJT) and a floating MOS field–effect transistor (MOSFET). In bipolar technology, a hyperbolic sine function circuit and a hyperbolic cosine function circuit are easily obtained by subtracting and summing the output currents of two symmetrical exponential–law elements with positive and negative input signals. In the same manner, an operational transconductance amplifier (OTA) and a squaring circuit are obtained by subtracting and summing the output currents of two symmetrical square-law elements with positive and negative input signals in CMOS technology. The proposed OTA and squaring circuit possess the widest input voltage range ever reported.

By applying Wigner distribution, which has high time resolution and high random noise reducing capability, to the acoustic bio–signals, the possibility of early diagnosis in both intracranial vascular deformation and prosthetic cardiac valve malfunction increased. Especially in latter case, 1st–order local moment of the distribution showed its effectiveness.

We present a novel algorithm to reconstruct the refractive-index profile of a circularly symmetric object from measurements of the electromagnetic field scattered when the object is illuminated by a plane wave. The reconstruction algorithm is besed on an iterative procedure of matching the scattered field calculated from a certain refractive-index distribution with the measured scattered field on the boundary of the object. In order to estimate the convergence of the reconstruction, the mean square error between the calculated and measured scattered fields is introduced. It is shown through reconstructing several examples of lossy dielectric cylinders that the algorithm is quite stable and is applicable to high-contrasty models in situations where the Born approximation is not valid.

More than 200 papers, two special issues (Journal of Circuits, Systems, and Computers, March, June, 1993, and IEEE Trans. on Circuits and Systems, vol.40, no.10, October 1993), an International workshop on "Chua's Circuit: chaotic phenomena and applications" at NOLTA'93, and a book (Edited by R. N. Madan, World Scientific, 1993) on Chua's circuit have been published since its inception a decade ago. This review paper attempts to present an overview of these timely publications, almost all within the last 6 months, and to identify four milestones of this very active research area. An important milestone is the recent fabrication of a monolithic Chua's circuit. The robustness of this IC chip demonstrates that an array of Chua's circuits can also be fabricated into a monolithic chip, thereby opening the floodgate to many unconventional applications in information technology, synergetics, and even music. The second milestone is the recent global unfolding of Chua's circuit, obtained by adding a linear resistor in series with the inductor to obtain a canonical Chua's circuit--now generally referred to as Chua's oscillator. This circuit is most significant because it is structurally the simplest (it contain only 6 circuit elements) but dynamically the most complex among all nonlinear circuits and systems described by a 21–parameter family of continuous odd–symmetric piecewise–linear vector fields. The third milestone is the recent discovery of several important new phenomena in Chua's Circuits, e.g., stochastic resonance, chaos–chaos type intermittency, 1/f noise spectrum, etc. These new phenomena could have far-reaching theoretical and practical significance. The fourth milestone is the theoretical and experimental demonstration that Chua's circuit can be easily controlled from a chaotic regime to a prescribed periodic or constant orbit, or it can be synchronized with 2 or more identical Chua's circuits, operating in an oscillatory, or a chaotic regime. These recent breakthroughs have ushered in a new era where chaos is deliberately created and exploited for unconventional applications, e.g., secure communication.

We introduce recurrent networks that are able to learn chaotic maps, and investigate whether the neural models also capture the dynamical invariants (Correlation Dimension, largest Lyapunov exponent) of chaotic time series. We show that the dynamical invariants can be learned already by feedforward neural networks, but that recurrent learning improves the dynamical modeling of the time series. We discover a novel type of overtraining which corresponds to the forgetting of the largest Lyapunov exponent during learning and call this phenomenon dynamical overtraining. Furthermore, we introduce a penalty term that involves a dynamical invariant of the network and avoids dynamical overtraining. As examples we use the Hnon map, the logistic map and a real world chaotic series that correspond to the concentration of one of the chemicals as a function of time in experiments on the Belousov–Zhabotinskii reaction in a well–stirred flow reactor.

Plating is applied to protect contact surfaces of contact devices such as switch, relay and connector from contaminations of oxidization and sulfuration etc. Furthermore it is known that the contact resistance can be reduced when there exist plated layers on the contact surfaces which have enough thickness and low resistivity compared with substratum materials. In this paper, contact resistance between plated conductors are calculated using three dimensional finite element method. Similariry, current density distribution in a contact spot with various resistivity of plated layers are shown and relative conductance depends on the contact area fraction with thickness of plated layers are presented.

We analyze the effect of overlapping technique on differential pulse position modulation (DPPM) in optical direct-detection channel when the pulsewidth and the average power of the channel are constrained. We refer to the modulation scheme employing an overlapping technique in DPPM as differential overlapping PPM (DOPPM). To avoid frame synchronization problems, we analyze the performance of DOPPM under the window scheme that results in lower bounds on the capacity and the cutoff rate of DOPPM but is easy to analyze. Under this scheme, we analyze the lower bounds on the capacity and the cutoff rate of DOPPM. It is shown that DOPPM with the window scheme has higher capacity and cutoff rate than PPM and DPPM, and also than OPPM when the average received number of photons per slot is somewhat large. The overlapping technique is thus shown to be effective on DPPM under the pulsewidth constraint when the average received number of photons per slot is somewhat large.

Arc discharge between electrodes of relays and switches often causes contact surface damage through material transfer and arc erosion. Especially, material transfer sometimes occurs and brings serious failure even under lower load that is quite smaller than the minimum arc current value of contact material. In this paper, contact surface configuration, material transfer, and arc erosion characteristics of Ag and AgPd 60 contacts were experimentally studied after 0.5 or 1 million switching operations at various load levels. The followings can be made clear. Firstly, it was confirmed that the arcs and material transfer occurred even under such current that was lower than the minimum arc current. Therefore, the definition of the arc occurrence boundary current was newly determined. Secondly, the relation between load conditions (current and power supply voltage) and contact surface configuration (craters and pips) caused by material transfer was studied. The arc erosion behaviors of tested samples could be classified into two types: material transfer type and wear-out type. As one of the primary factors of transition from the former type to the latter one, contact activation was considered. The influences of load conditions and organic gas emitted from relay structure on arc characteristics was experimentally examined. The results indicated that load current greatly influenced the amount of material transfer and that power supply voltage affected the occurrence of the wear-out type significantly. The activation behavior of the contact surface could be found through observing the bridge voltage waveform.

The electric or electronic circuits have many contact devices such as relay and switch. The contact between two nominally conducting flat surface has a lot of micro contact spots. The constriction resistance of the contact is known to determine the sum of the parallel resistance of the micro contacts and the interaction of them. The constriction resistance of two circular conducting spots was approximately formulated by Greenwood. This formulation shows that the interacted resistance of two circular spots is in inverse proportion to the distance between two conducting spots. It was known that this effect is introduced by the interaction between two conducting spots. However, the condition of interaction in the spots is not clear. Calculating the current density distribution in the spots is important to clarify the condition of interaction. The numerical analysis is very suitable to calculate the current density in the spots. In the fundamental case of the computation of the current density the boundary element method (BEM) is more efficient and accurate than that of the finite element method (FEM) because the boundary condition at the infinite is naturally satisfied and is not required a great number of the element in a wide space. In this paper the current density in the square spots is computed by the BEM. As the distance between two conducting spots becomes small, the current density in the two spots decreases. It becomes clear that the constriction resistance of conducting spots is increased by this effect. The decrease of current density by interaction is not uniformly, that at the near location to the opposite spot is larger than that at the far location in the same spot. In this paper the constriction resistance of two conducting spots is also considered. It was known that the constriction resistance of one conducting spot is not influenced by the form of spot very much. However, that of two conducting spots is not clear. The constriction resistance of two square spots is also computed by the BEM. The computed values of the constriction resistance of two square spots are compared with that of two circular spots by Greenwood's formulation and other results. As the result, it is clear that they have the considerable discrepancy. However, the trend of the variations is almost agree each other.

In the conventional protocol synthesis, it is generally assumed that primitives in service specifications cannot be executed simultaneously at different Service Access Points (SAPs). Thus if some primitives are executed concurrently, then protocol errors of unspecified receptions occur. In this paper, we try to extend a class of service specifications from which protocol specifications are synthesized by the previous methods. We first introduce priorities into primitives in protocol specification so that it always selects exactly one primitive of the highest priority from a set of primitives that can be executed simultaneously, and executes it. Then, based on this execution ordering, we propose a new protocol synthesis method which can avoid protocol errors due to message collisions, communication competitions and so on. By applying the proposed synthesis method, we can automatically synthesize a protocol specifications from a given service specification which includes an arbitraty number of processes and allows parallel execution of primitives.

On the surface of contacts which are exposed to the atmosphere, the reaction with gases in the atmosphere produces contaminant films including oxides. The contact reliability is degraded by the contaminant films. Humidity in the atmospheric environment also influences on the surface of contacts. However, influence of humidity on the surface has not been clarified. In the present paper, influence of humidity on the Cu surface and the oxides (CuO + Cu2O) on it were studied with respect to the thickness of the oxide film and contact resistance characteristics both for static and for sliding contacts. The thickness was measured by ellipsometric analysis. Topographic image affected by humidification was also observed by scanning tunneling microscope (STM). In the atmospheric environment, the clean surface of Cu was found to oxidize with fluctuations of the thickness for lapse of exposure time due to the fluctuations of the humidity. It was also found that the thickness of the oxide film decreases immediately after the humidification, and increases under dehumidification. Changes in contact resistance affected by humidity was corresponding to the change in the film thickness. Immediately after humidification contact resistance decreased, and increased with dehumidification both for static and for sliding contacts. For the mechanism of the influence of humidity on the oxide, chemical reduction of hydrogen generated by decomposition of the absorbed water molecule (H2O) was derived. The clean Cu surface was oxidized by oxygen due to absorbed water molecule and atmosphere.

State space explosion is a serious problem in analyzing discrete event systems that allow concurrent occurring of events. A new method is proposed for generating reduced state spaces of systems. This method is an improvement of Valmari's stubborn set method. The generated state space preserves liveness, livelocks, and terminal states of the ordinary state space. Petri nets are used as a model of systems, and a method is shown for generating a reduced state space from a given Petri net.

This paper considers algebraic basic processes, a subset of communicating processes in CCS by Milner, and presents a synthesis algorithm to infer a process that satisfies the properties of the process, represented as fomulae in Hennessy-Milner Logic. The validity of the proposed algorithm can be stated that it synthesizes a process in the limit, which cannot be distinguished from the target one with respect to the strong equivalence.

A new current-mode dual-input configuration for the generation of a ratio (Y2/Y1) type network function using the second generation current conveyor (CC ) elements has been proposed. With nonideal CC s, a precise compensation of output current can be obtained simply by insertion of a grounded admittance (Yc). The design of precise insensitive current-mode integrator/differentiator type functional circuits follows directly if the Y1,2 admittances are suitably chosen as RC components.

Three-dimensional display technologies that require special glasses are not suitable for telecommunications because wearing glasses is inconvenient and it is defficult to observe facial expressions. Our previous 6.3-inch 3D display was inadequate for presenting images with realistic sensation. In this paper, a direct view 15-inch 3D display is described. The display is made up of a l5-inch TFT LCD and a composite lenticular sheet (LS), and uses the head tracking technique. Quantitative evaluation of the stereoscopic sensation of the display was studied using the 3D display, and better stereoscopic sensation values were obtained compared with a 2D display mode, thus comfirming the display's usefulness.

Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.

We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.51020 cm-3, while for δ-doped layers the sheet hole density as high as 2.61013 cm-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.

We have systematically grown and characterized (Bi, Pb)2Sr2CaCu2Oy (BPSCCO) single crystals, and investigated the tunneling properties and the intrinsic Josephson effects of the single crystals as a function of the nominal composition of Pb, x. It was observed that Pb atoms (ions) were monotonically substituted for Bi atoms (ions) in the (Bi, Pb)-O layers of the crystals with increasing x in a region of 0x0.5, while the modulation structure was maintained in a range of 0x0.3, but disappeared in x0.3, accompanying the decrease of c-lattice parameter and Tc. Moreover, it was found that the energy gaps Δ of BPSCCO depend hardly on x for x0.5, which are about 24 meV, so that the Pb-induced electronic change in the (Bi, Pb)-O layer do not perturb the electronic states in this superconducting system. And it was confirmed that the currentvoltage characteristics of the BPSCCO single crystals had multiple resistive branches corresponding to a series array of several hundreds Josephson junctions, and showed Shapiro steps and zero-crossing steps with the voltage separation of the order of mV resulting from the phase locking of about a hundred Josephson junctions among them under microwave irradiation. The estimated number of junctions gave the concept that the intrinsic Josephson junctions consist of the superconducting block layers and the insulating layers in the BPSCCO single crystals.

Overlapping multi-pulse pulse position modulation (OMPPM) is a modulation scheme having higher capacity and cutoff rate than other conventional modulation schemes when both off-duration between pulses shorter than a laser pulsewidth and resolution better than a laser pulsewidth are realized [1],[2]. In Refs. [1],[2] erasure events of a few chips that can be decoded correctly is defined as an erasure event. This results in lower bounds on the performance of OMPPM in optical-direct-detection channel in quantum limited case. This paper analyzes more exact performance of OMPPM in optical direct-detection channel in quantum limited case when both off-duration between pulses shorter than a laser pulsewidth and resolution better than a laser pulsewidth are realized. First we derive the error probability of OMPPM with considering what chips are detected or erased. Then we derive the capacity and the cutoff rate of OMPPM using the error probability. It is shown that OMPPM outperforms on-off keying (OOK), pulse position modulation (PPM), multi-pulse PPM (MPPM), and overlapping PPM (OPPM) in terms of both capacity and cutoff rate for the same pulsewidth and the same duty cycle. Moreover, it is shown that OMPPM with fewer slots and more pulses per block has better cutoff rate performance when the average received power per slot is somewhat large.