It is necessary condition for digital watermarking method for embedding memos or index data into digital photograph and so on that anyone can extract embedded data without specific keys or secret information. In this paper, we propose a data hiding technique for embedding index data into color images using wavelet transform. The proposed method keeps image quality and robustness against JPEG compression and general image processing using quantitative relation of wavelet coefficients.

A power combining technique using a Fabry-Perot resonator with many more active devices is investigated. The Fabry-Perot power combiner consists of two mirrors with a circular groove mounted with the active devices. The power combiner has an axially symmetrical structure and operates at an axially symmetrical TEM01n mode so that uniform device-field coupling required for perfect power combining can be realized. By numerical calculation using the boundary element method, it was shown that high combining efficiency can be obtained when the active devices are mounted in the circular groove of larger radius on either of the two mirrors. In experiments at X-band, power combining efficiency over 90% was obtained for the case of twelve devices on either of the mirrors and the output powers of the twenty or twenty-four devices on both the mirrors were almost perfectly combined.

This paper presents improved versions of three-stage positive-output and two-stage negative-output Dickson charge-pump circuits which are intended to replace switching regulators in video-product CCD driver applications (where 12 V and -6.5 V are needed), and are designed and fabricated in a custom CMOS process. From a power supply Vdd of 4.0 to 5.5 V, the positive charge pump generates a positive output voltage of greater than 3.9Vdd, while the negative charge pump generates a negative voltage of greater than -1.9Vdd, both with efficiencies of greater than 94% at 2 mA output currents.

We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100C and was patterned by lift-off technique. The dielectric constant of BCB film deposited by plasma CVD was confirmed 2.7, which is equal to that of spin-coated BCB, and is 35% lower than that of conventional SiO2. The leakage current was 4.710-5 A/cm2 at 3.6 MV/cm and was low enough for spacer material. 0.15-µm T-shaped gate MODFETs were fabricated by using BCB spacer and phase-shift lithography technique. More than 20 GHz increase of fmax was obtained in comparison with conventional SiO2 spacer by reducing the gate fringing capacitance.

We fabricated 50-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates by using a conventional process under low temperatures, below 300C, to prevent fluorine contamination and suppress possible diffusion of the Si-δ-doped sheet in the electron-supply layer, and measured the DC and RF performance of the transistors. The DC measurement showed that the maximum transconductance gm of a 50-nm-gate HEMT is about 0.91 S/mm. The cutoff frequency fT of our 50-nm-gate HEMT is 362 GHz, which is much higher than the values reported for previous 50-nm-gate lattice-matched HEMTs. The excellent RF performance of our HEMTs results from a shortening of the lateral extended range of charge control by the drain field, and this may have been achieved because the low-temperature fabrication process suppressed degradation of epitaxial structure.

Although TE0nδ mode ceramic resonators are usually used at centimeter frequencies, they have difficulty in making wide-band band-pass filters in the millimeter-wave region due to the weak coupling factors between TE0nδ mode resonators and input/output waveguides. In order to overcome such difficulty, a band-widening technique of the ceramic resonator loaded band-pass filter has been proposed. The EHnmδ modes were regarded as spurious modes so far, but it is clear that the coupling factors are larger than those of the TE0nδ modes from the results of experimental considerations in this paper. By using the EH11δ mode ceramic resonators, 5-pole, 1 dB Chebyshev ripple NRD guide band-pass filter has been fabricated for the applications to broad-band millimeter-wave communication systems at 60 GHz. The filter has great advantages such as the wide pass-band beyond 2 GHz and low excess insertion loss of less than 0.3 dB.

A compact MMIC power amplifier which delivers P1dB of 25.8 dBm (380 mW) at 40 GHz has been developed. To make the chip width narrower, only one unit block using two parallel HEMTs is applied for a power stage. For achieving broadband interstage matching when using wide gate-width unit devices in the power stage, a new configuration of a unit block which contains a shunt capacitance is proposed.

The temperature compensation technique of InGaP/GaAs power heterojunction bipolar transistor (HBT) with novel bias circuit using Schottky diodes has been developed. The variation in the quiescent current to the temperature is less than 30% from -30C to 90C by this technique, where that is about 125% by the conventional bias circuit. The RF performance of the power HBT MMIC with novel bias circuit shows flat temperature characteristics enough to be used for power application of wireless communications.

The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.

This paper describes the numerical analysis for terahertz electromagnetic-wave oscillation/detection properties of plasma-wave field-effect transistors (PW-FET's) and their applications to future smart photonic network systems. The PW-FET is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. By numerically solving the hydrodynamic equations for PW-FET's, the plasma resonance characteristics under terahertz electromagnetic-wave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MESFET's, and InP-based HEMT's. The results indicate that the InP-based sub-100-nm gate-length HEMT's exhibit the most promising oscillation/detection characteristics in the terahertz range with very wide frequency tunability. By introducing the PW-FET's as injection-locked terahertz-frequency-tunable oscillators and terahertz mixers, a new idea of coherent heterodyne detection utilizing terahertz IF (intermediate-frequency) bands is proposed for the future smart photonic network systems that enable real-time adaptive wavelength routing for add-drop multiplexing. The plasma resonance of PW-FET's by means of different frequency generation based on direct photomixing is also proposed as an alternative approach to injection-locked terahertz oscillation. To realize it, virtual carrier excitations by the polariton having photon energy lower than the bandgap of the channel is a possible mechanism.

We propose a three-dimensional structure on a planar substrate employing micromachining technology. A low-loss suspended structure incorporating a BCB membrane employing deep trench etching technology has been newly proposed. A micromachined suspended line structure using BCB membrane film enables us to realize a low loss planar resonator, which achieved an unloaded quality factor (Q-factor) of more than 280 at 60 GHz. We design low-loss filters and antennas built into silicon in a 60 GHz band. A low-loss filter realizes an insertion loss of 1.0 dB at 60 GHz and a patch antenna obtains a 3% bandwidth. In addition, we demonstrate a 60 GHz receiver front-end IC incorporating the planar filter and the antenna, and obtain good results. These techniques enable us to integrate various functions into a compact package even in millimeter-wave bands.

Rectangular/circular-to-radial waveguide tra-nsformers through a ring slot have been proposed for the feeder of radial line slot antennas (RLSAs) in millimeter wave application. Rotating electric modes are excited by a set of ring slot and perturbation dog bone slot. Basic operation is observed in 12 GHz band. Concentric array radial line slot antennas fed by these transformers are fabricated and the antenna gain of 26.9 dBi with the efficiency more than 60% is measured. The applicability for millimeter wave is verified for 38 GHz band RLSA fed by the rectangular waveguide. The measured gain of the antenna is 22.5 dBi with the efficiency of 53% with the diameter of 46mm and 26.4 dBi with 61% with the diameter of 66mm.

This paper proposes a multisegment dielectric resonator (MSDR) placed on a slotline for millimeter-wave filter applications. The MSDR structure, including a rectangular dielectric lump and a thin low-dielectric insert, is quite useful for adjusting the coupling between the slotline mode and the resonant mode, leading to improve the filter performances. In addition, by tuning dimensions of the MSDR, a sharp and clear notch response can be designed in the transmission parameter. We have demonstrated the filter characteristics both theoretically and experimentally, and showed the practical procedure for the design of MSDR filters.

The millimeter wave filter using two whispering-gallery mode dielectric disk resonators is presented in this paper. The coupling coefficients of dual disk resonators and the external Q values of the single resonator excited by a dielectric waveguide are investigated theoretically and experimentally. A 2-stage bandpass filter which is designed at the center frequency of 69.85 GHz with a bandwidth of 500 MHz shows a low-loss property of 1.8 dB insertion loss.

We present a novel kind of integrate-and-fire circuit (IFC) with two periodic inputs: a pulse-train stimulation input and a base input. We clarify that the system state is quantized by the pulse-train stimulation input. Then the system dynamics is described by a return map with quantized state (Qmap). By changing the shape of the base input, various Qmaps can be obtained. The Qmap exhibits co-existence state of various super-stable periodic orbits, and the IFC outputs one of corresponding super-stable periodic pulse-trains depending on the initial state. For a typical case, we clarify the number of co-existing periodic pulse-trains theoretically for the stimulation frequencies. Constructing a simple test circuit, typical phenomena can be verified in the laboratory.

Today, people want highly-customized products to satisfy their individual requirements. However traditional manufacturing technology is not geared towards high-mix, low-volume manufacturing. Holonic Manufacturing Systems (HMS) is a new paradigm to bridge this divide. HMS offers enterprises a new breed of technology to continuously reconfigure themselves to manufacture a larger variety of products in smaller batch sizes, and do this profitably. A suitable metaphor for implementing the holonic manufacturing system is the emerging IEC function block architecture. The paper describes how function blocks can be used to build such holonic manufacturing systems. We also illustrate the merits of our approach through a real-world engine assembly line being developed by DaimlerChrysler.

The heterogeneous autonomous decentralized system technology offers a way to integrate different types of context-related autonomous decentralized (sub) systems into a coherent system. The aim of this research is to model and evaluate the communication capacity among the subsystems connected by communication gateways of a heterogeneous autonomous decentralized system. Failures of subsystems and communication gateways in the system are taken into account. We use graphs to represent the topologies of heterogeneous autonomous decentralized systems and use the residual connectedness reliability (RCR) to characterize the communication capacity among its subsystems connected by its gateways. This model enables us to share research results obtained in residual connectedness reliability study in graph theory. Not to our surprise, we learnt soon that computing RCR of general graphs is NP-hard. But to our surprise, there exist no efficient approximation algorithms that can give a good estimation of RCR for an arbitrary graph when both vertices and edges may fail. We proposed in this paper a simulation scheme that gave us good results for small to large graphs but failed for very large graphs. Then we applied a theoretical bounding approach. We obtained expressions for upper and lower bounds of RCR for arbitrary graphs. Both upper and lower bound expressions can be computed in polynomial time. We applied these expressions to several typical graphs and showed that the differences between the upper and lower bounds tend to zero as the sizes of graphs tend to infinite. The contributions of this research are twofold, we find an efficient way to model and evaluate the communication capacity of heterogeneous autonomous decentralized systems; we contribute an efficient algorithm to estimate RCR in general graph theory.

System needs of growing systems including heterogeneous functions and operations are increased. High assurance system that achieves high reliability and high availability is very important for such systems. In order to realize high assurance system, we developed the assurance technology based on ADS (Autonomous Decentralized System). When a growing system changes or grows, its reliability may be lowered. In this paper, we clarify the risk factors which lower the reliability and quality of a growing system when the system is modified. We will then examine the technology to eliminate or mitigate those risk factors, and propose adaptive assurance technology that can minimize the risk. We also applied this technology to ATOS for Tokyo Metropolitan Railway Network as an example of really changing and growing system and mention its effectiveness. ATOS; Autonomous Decentralized Transport Operation Control System.

Simulation based education and training, especially wargame simulations, are being used widely in the field of defense modeling and in simulation communities. In order to efficiently train students and trainees, the wargame simulations must have both high performance and high fidelity. In this paper, we discuss design and implementation issues for a prototype of a parallel and distributed wargame simulation system. This wargame simulation system is based on High Level Architecture (HLA) and employs some optimization to achieve both high performance and high fidelity in the simulation system. The results show that the proposed optimization method is effective when optimization is applied to 93.5% or less of the moving objects (PFs) within the range of detection (RofD) of both the red and blue teams. Specifically, when each team has 1000 PFs we found that if the percentage of PFs within RofD is less than 50% for both teams, our method is over two times better than for the situation where there is no optimization.

Stability of slotted ALOHA systems with retransmission cutoff, in which a packet is discarded after the certain number of unsuccessful transmissions, is investigated on slow-frequency-hopped channels with the aid of the catastrophe theory. The result of this paper can be viewed as extension of the result derived by Kim. The balance function is first formulated. Then, the cusp point and the bifurcation sets are numerically evaluated. We visualize how retransmission cutoff effects on bistable region. Using the result, we can design parameters of slotted ALOHA systems with retransmission cutoff such that the system operates with the unique stable equilibrium point.