Energy harvesting has been widely investigated as a potential solution to supply power for Internet of Things (IoT) devices. Computing devices must operate intermittently rather than continuously, because harvested energy is unstable and some of IoT applications can be periodic. Therefore, processors for IoT devices with intermittent operation must feature a hibernation mode with zero-standby-power in addition to energy-efficient normal mode. In this paper, we describe the layout design and measurement results of a nonvolatile standard cell memory (NV-SCM) and nonvolatile flip-flops (NV-FF) with a nonvolatile memory using Fishbone-in-Cage Capacitor (FiCC) suitable for IoT processors with intermittent operations. They can be fabricated in any conventional CMOS process without any additional mask. NV-SCM and NV-FF are fabricated in a 180nm CMOS process technology. The area overhead by nonvolatility of a bit cell are 74% in NV-SCM and 29% in NV-FF, respectively. We confirmed full functionality of the NV-SCM and NV-FF. The nonvolatile system using proposed NV-SCM and NV-FF can reduce the energy consumption by 24.3% compared to the volatile system when hibernation/normal operation time ratio is 500 as shown in the simulation.

We have developed two modulator driver ICs that are based on the functional distributed circuit (FDC) topology for over 40-Gb/s optical transmission systems using InP HBT technology. The FDC topology enables both a wide bandwidth amplifier and high-speed digital functions. The none-return-to-zero (NRZ) driver IC, which is integrated with a D-type flip-flop, exhibits 2.6-Vp-p (differential output: 5.2 Vp-p) output-voltage swings with a high signal quality at 43 and 50 Gb/s. The return-to-zero (RZ) driver IC, which is integrated with a NRZ to RZ converter, produces 2.4-Vp-p (differential output: 4.8 Vp-p) output-voltage swings and excellent eye openings at 43 and 50 Gb/s. Furthermore, we conducted electro-optical modulation experiments using the developed modulator driver ICs and a dual drive LiNbO3 Mach-Zehnder modulator. We were able to obtain NRZ and RZ clear optical eye openings with low jitters and sufficient extinction ratios of more than 12 dB, at 43 and 50 Gb/s. These results indicate that the FDC has the potential to achieve a large output voltage and create high-speed functional ICs for over-40-Gb/s transmission systems.

In this paper, the scan chain ordering method for BIST-aided scan test for reducing test data and test application time is proposed. In this work, we utilize the simple LFSR without a phase shifter as PRPG and configure scan chains using the compatible set of flip-flops with considering the correlations among flip-flops in an LFSR. The method can reduce the number of inverter codes required for inverting the bits in PRPG patterns that conflict with ATPG patterns. The experimental results for some benchmark circuits are shown to present the feasibility of our test method.

A high-speed and ultra-low-voltage divide-by-4/5 counter with dynamic floating input D flip-flop (DFIDFF) is presented in this paper. The proposed DFIDFF and control logic gates are merged to reduce effective capacitance of internal and external nodes, and increase the operating speed of divide-by-4/5 counter. The proposed divide-by-4/5 counter is fabricated in a 0.13-µm CMOS process. The measured maximum operating frequency and power consumption of the counter are 600 MHz and 8.35 µW at a 0.5 V supply voltage. HSPICE simulations demonstrate that the proposed counter (divide-by-4) reduces power-delay product (PDP) by 37%, 71%, and 57% from those of the TGFF counter, Yang's counter [1], and the E-TSPC counter [2], respectively.

A dual-modulus (divide-by-128/129) prescaler has been designed based on 0.25-µm CMOS technology employing new D-flip-flops. The new D-flip-flops are free from glitch problems due to internal charge sharing. Transistor merging technique has been employed to reduce the number of transistors and to secure reliable high-speed operation. At the 2.5-V supply voltage, the prescaler using the proposed dynamic D-flip-flops can operate up to the frequency of 2.95-GHz, and consumes about 10% and about 27% less power than Yuan/Svensson's and Huang's circuits, respectively.

This paper describes IDDQ testability for bridging faults in a variety of flip-flops. The flip-flop is a basic element of the sequential circuit and there are various structures even for the same type. In this paper, we use five kinds of master-slave D-type flip-flops as the circuit under test. Target faults are two-line resistive bridging faults extracted from a circuit layout. A flip-flop with a deliberately introduced bridging fault is simulated by the SPICE simulator. Simulation results show that IDDQ testing cannot detect faults existing at specific points in some flip-flops, and this problem depends on the flip-flop structure. However, IDDQ testing has high fault coverage ( 98%) compared with traditional logic testing. We also examine performances of fully IDDQ testable flip-flops.

In this paper, a general theory on multiple-valued static random-access-memory (RAM) is investigated. A criterion for a stable and an unstable modes is proved with a strict mathematical method and expressed with a diagrammatic representation. Based on the theory, an NMOS 6-transistor ternary and a quaternary static RAM (SRAM) cells are proposed and simulated with PSPICE. The detail circuit design and realization are analyzed. A 10-valued CMOS current-mode static RAM cell is also presented and fabricated with standard 5-µm CMOS technology. A family of multiple-valued flip-flops is presented and they show to have desirable properties for use in multiple-valued sequential circuits. Both PSPICE simulations and experiments indicate that the general theory presented are very useful and effective tools in the optimum design and circuit realization of multiple-valued static RAMs and flip-flops.