We investigate the potential of photonic crystal fiber (PCF) to realize high quality and high-power transmission. We utilize the PCF with a quasi-uniform air-hole structure, and numerically clarify that the quasi-uniform PCF can realize the effective area (Aeff) of about 500µm2 with bending loss comparable with that of a conventional single-mode fiber for telecom use by considering the quasi single-mode transmission. We then apply the quasi-uniform PCF to kW-class high-power beam delivery for the single-mode laser processing. The cross-sectional design of the PCF with the high-power delivery potential of more than 300kW·m is numerically and experimentally revealed. A 10kW single-mode beam at 1070nm is successfully delivered over a 30m-long optical fiber cable containing a fabricated PCF with single-mode class beam quality of M2 =1.7 for the first time.

High-power T/R switch with GaN HEMT technology is successfully developed, and the design theory is formulated. The proposed switch employs an asymmetric series-shunt/shunt configuration. Because the power handling capability of the proposed switch is mainly dependent of the breakdown voltage of FETs, the proposed circuit can make full use of the characteristics of the GaN HEMT technology. The switch has a high degree of freedom for the FET gate widths, so the low insertion loss can be obtained while keeping high-power performances. To verify this methodology, T/R switch has been fabricated in X-band. The fabricated switch has demonstrated an insertion loss of 1.8 dB in Rx-mode, 1.2 dB in Tx-mode and power handling capability of 20 W in 53% bandwidth.

High-power protection switch utilizing a new stub/line selectable configuration is presented. By employing the proposed circuit topology, the insertion loss at receiving mode and the power handling capability at transmitting mode can be independently designed. Therefore, the proposed circuit is able to achieve low insertion loss at receiving mode while keeping high-power performance at transmitting mode. To verify this methodology, MMIC switch has been fabricated in Ka-band. The circuit has achieved the insertion loss of 2 dB, the isolation of 25 dB, and the power handling capability of 40 dBm at 5% bandwidth.

We fabricated high-power pure blue laser diodes (LDs) by using GaN-based material for full-color laser display. The operating output power, voltage and wall-plug efficiency of the LDs at forward current of 1.0 A were 1.17 W, 4.81 V and 24.3%, respectively. The estimated lifetime of the LDs was over 30,000 hours under continuous-wave operation.

The thermal gain variation of a high-power amplifier (HPA) module for a wide-band code division multiple access (W-CDMA) system application was reduced to within 1 dB by applying a thermistor to compensate the gain variation. Two techniques for gain variation compensation with respect to temperature were investigated: base bias control according to temperature, and use of a thermistor in a matching network. Experimental comparison of two techniques indicated that the thermistor-based technique was more effective in reducing the gain variation without affecting linearity. A fabricated two-stage HPA module with a thermistor in its input matching network achieved a small gain variation within 1 dB and 5 MHz offset adjacent channel leakage power ratio (first ACLR) below -36 dBc over the temperature range from -10 to +85C, where the first ACLR was measured under a load-mismatched condition with a voltage standing wave ratio (VSWR) of 1.4:1.

A millimeter-wave low-loss, high-isolation and high-power terminated MMIC switch is developed, and the design theory is formulated. Our invented switch is designed based on a non-linear relationship between the parallel resistance of an FET and its gate width. Our measurements of the parallel resistance with different gate width have revealed that the resistance is inverse proportion to a square of the gate width. By using this relationship, we have found the fact that the multiple FET resonators with smaller gate width and high inductance elements realize high-Q performance for the same resonant frequency. Since the power handling capability is determined by the total gate width, our switch circuit could reduce its insertion loss, keeping the high-power performance. We additionally describe the design method of this switch circuit. The relationships between the gate widths of the FETs and the electrical performances are described analytically. The required gate widths of the FETs for handling high power signal are represented, and the design equations to obtain lower insertion loss and higher isolation performances keeping high power capability are presented. To verify this methodology, we fabricated a MMIC switch. The MMIC had insertion loss of 2.86 dB, isolation of 37 dB and power handling capability of more than 33 dBm at 32 GHz.

An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.

We have exploited a high-power-tolerant variable optical attenuator (VOA) based on the fused fiber coupler in the all-fiber structure. A newly designed VOA employs the external modulation by forcing an axial stress in the tapered region of the fused fiber coupler. In the tapered region, the axial stress changes the refractive index of silica glasses resulting in a change in the coupling coefficient of the coupler. In this paper, we explain the principle of the novel device, VOA, and the optimized fabrication of the fused fiber coupler for the attenuation. The changes of the transmission spectrum for the coupler and the optical power spectrum for pump laser diode (LD), whose center wavelength is 1.47µm, versus the axial displacement were verified by experiment. The possibility of the wavelength uniformity less than 1dB over the range of 1460-1500nm was also obtained by another coupler under a different fabrication condition. The polarization-dependent loss (PDL) at 1.47µm wavelength was 0.65dB for a maximum displacement of 150µm. The designed device has an attractive feature of another output port of the coupler available as a monitoring tap. The device showed a high attenuation above 34dB and an insertion loss below 0.15dB. The all-fiber structure can provide less alignment, which in turn provides a high power tolerance. This novel design, moreover, has a simple and cost-effective structure.

785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70 of the carbon doped LD is reduced by about 15% from that of zinc doped one. Highly reliable 160 mW pulsed operation is also realized at 70. This LD believed to be suited for the next generation high-speed (16-24x) CD-R drives necessitating 160 mW class LD.

A number of Tonpilz piezoelectric transducers generally form a large matrix array. They may be required to be only light in weight, or both miniaturized and light in weight as well as to have high-power capability, according to their use. This paper describes the results obtained in an investigation of miniaturized, light-weight Tonpilz piezoelectric transducers with high-power capability. An electromechanical energy conversion system and mechanical vibration system for the transducer are theoretically investigated on transducer configuration, using a Martin equivalent circuit and distributed-constant equivalent mechanical circuits. For simplification of the theoretical analysis, the transducer was considered as being divided into a front-half section, from the head mass end to the vibration nodal section, and a rear-half section, from the vibration nodal section to the tail mass end. Figures of merits, FMm for the front-half section and FM'm for the rear-half section, are calculated to achieve lightening as well as high-power capability. In addition, figures of merits FMml for the front-half section and FM'ml for the rear-half section are calculated to achieve miniaturization and lightening as well as high-power capability. To corroborate the theoretical results obtained, three kinds of Tonpilz transducers having the same 30 kHz resonant frequency but different configurations were built. Then, three kinds of 33 matrix arrays composed of nine Tonpilz transducers with the same configuration were fabricated. To evaluate the high-power characteristics for the arrays, a water tank to which high hydraulic pressure can be applied was adopted and a high-power test was carried out. As a result, it was found that transducers with high FMm and FM'm figures of merits are light in weight and exhibit high performance in high-power handling capability. Also, it was found that transducers with high FMml and FM'ml figures of merits are miniaturized and light in weight and exhibit high performance in high-power handling capability.

A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm2 and 17.4 24.0 mm2, respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.

The growth and saturation characteristics of an electromagnetic (EM) wave in a Smith-Purcell free-electron laser (FEL) with a Bragg cavity are investigated in detail with the aid of numerical simulation based upon the fluid model of the electron beam. To analyze the problem, a two-dimensional (2-D) model of the Smith-Purcell FEL is considered. The model consists of a planar relativistic electron beam and a parallel plate metallic waveguide, which has a uniform grating carved on one plate. For confinement and extraction of EM waves, a Bragg cavity is formed by a couple of reflector gratings with proper spatial period and length, which are connected at both ends of the waveguide. The results of numerical simulation show that a compact Smith-Purcell FEL can be realized by using a Bragg cavity composed of metallic gratings.

This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.