This paper describes a new active pull-up (APU) interface for high-speed point-to-point transmission. The APU circuit is used to speed up a low-power-consumption open-drain-type interface. It pulls up the output at a fixed duration and this limiting of the pull-up duration prevents the pull-up operation from going into a counter phase at over 1-Gbps operation. Measurements of test chips fabricated with 0.25-µm bulk CMOS show. 1.7-Gbps error-free operation for the APU interface and 1.2-Gbps operation for the open-drain-type interface: The APU interface is 1.4 faster than the open-drain type. The application of a 0.25-µm SIMOX-CMOS device to the APU interface increases the bit rate 1.5 times compared with 0.25-µm bulk CMOS. Altogether the interface covers the bit rate of 2.4 Gbps, which is a layer of the communication hierarchy. The APU interface circuit can be applied to large-pin-count LSIs because of its full-CMOS single-rail structure.

We have developed a design technique for static logic circuits. Using this technique, we designed 1/2 divider-type 1:4 demultiplexer (DEMUX) and 2:1 selector-type 4:1 multiplexer (MUX) circuits, each of which is a key component in high-speed data multiplexing and demultiplexing. These circuits consist of double rail flip-flops (DR F/F). These flip-flops have a smaller mean internal capacitance than single rail flip-flops, making them suitable for high-speed operation. The DR F/F has a symmetric structure, so the double rail toggle flip-flop can put out an exactly balanced CK/CKN signal, which boosts the speed of the data flip-flops. The double rail structure enables 30% faster operation but consumes only 17% more power (per GHz) than a single rail circuit. In addition, our 0.25-µm process technology provides a 70% higher frequency operation than 0.5-µm process technology. At the supply voltage of 2.2 V, the DEMUX circuit and the MUX circuit operate at 4.55 GHz and 2.98 GHz, respectively. In addition, the 0.25-µm DEMUX circuit and the MUX circuit respectively consume 6.0 mW/GHz and 13.7 mW/GHz (＠1.3 V), which are only 12% of the power consumed by 3.3-V 0.5-µm circuits. Because of its high-speed and low-power characteristics, our design technique will greatly contribute to the progress of large-scale high-speed telecommunication systems.

In a fully depleted (FD) CMOS/SIMOX device, the threshold voltage can be reduced by 0.1 V while keeping the same off current as that of bulk CMOS. This enhances gate speed at low supply voltage so that lowering supply voltage reduces both active and static power consumption without additional circuits. An LSI architecture featuring a low supply voltage for internal gates and an LVTTL interface is proposed. However, to implement the architecture with FD-CMOS/SIMOX devices, there were problems which were low drain-breakdown voltage and half electrostatic discharge (ESD) hardness compared with that of bulk CMOS devices. An LVTTL-compatible output buffer circuit is developed to overcome the low drain-breakdown voltage. Cascade circuits are applied at an output stage and a voltage converter with cross-coupled PMOS is used for reducing the applied voltage from 3.3 V to 2.2 V or less. Using this output buffer together with an LVTTL-compatible input buffer, external 3.3 V signal can be converted from/to 2.0-1.2 V signal with little static current. The cascade circuit, however, weakens the already low ESD hardness of the CMOS/SIMOX circuit. The new ESD protection circuit provides robust LVTTL compatible I/O circuits. It features lateral diodes working as drain-well-diodes in bulk CMOS and protection devices for dual power supplies. A diode/MOS merged layout pattern is used for both to dissipate heat and save area. The CMOS/SIMOX ESD protection circuit is the first one to meet the MIL standard. Using 120 kgate test LSIs made on 300 kgate array with 0.25-µm CMOS/SIMOX, 0.25-µm bulk CMOS and 0.5-µm bulk CMOS, power consumptions are compared. The 0.25-µm CMOS/SIMOX LSI can operate at an internal voltage of 1.2 V at the same frequency as the 0.5-µm LSI operating at 3.3 V. The internal supply voltage reduction scheme reduces LSI power consumption to 3% of that of 0.5-µm bulk LVTTL-LSI.

A new low-power and high-speed CMOS interface circuit is proposed in which signals are transmitted by means of impulse voltage. This mode of transmission is called impulse transmission. Although a termination resistor is used for impedance matching, the current through the output transistors and the termination resistor flows only in transient states and no current flows in stable states. The output buffer and the termination resistor dissipate power only in transient states, so their power dissipation is reduced to 30% that of conventional low-voltage-swing CMOS interface circuits at 160 MHz. The circuit was fabricated by 0.5 µm CMOS technology and was evaluated at a supply voltage of 3.3 V. Experimental results confirm low power of 4.8 mW at 160 MHz and high-speed 870 Mb/s error free point-to-point transmission.

A multihighway serial/parallel (S/P) converter LSI chip suitable for the broad-band Integrated Services Digital Network (B-ISDN) node interface is presented. The chip, fabricated with 0.8-µm BiCMOS technology, handles 32-highway 8 b of S/P, P/S conversion at up to 250 Mb/s and has a power dissipation of 700 mW. The features cross-access memory and a current-cut-type CMOS/ECL interface circuit. Each of these features is described and evaluated. A newly developed BiNMOS-type D-flip-flop (D-FF) is used to speed up the cross-access memory and is compared to a CMOS D-FF.

A high-speed serial, 10-Gb/s, passive optical network (PON) is a good candidate for a future PON system. However, there are several issues to be solved in extending the physical speed to 10 Gb/s. The issues focused on here are not only the data rate, which is eight times higher than that of a conventional GE-PON, but also the instantaneous amplification and synchronization of AC-coupling burst-input data without a reset signal. An input amplifier with data-edge detection can both detect level-varying input due to AC-coupling and respond to the first bit of a burst packet. Another issue discussed here is tolerance to long consecutive identical digits (CIDs). A burst-mode clock-and-data recovery (CDR) using dual gated VCOs (G-VCOs) is designed for 10-Gb/s operation. The relation between the frequency difference of the dual G-VCOs and CID tolerance is derived with a frequency tunable G-VCO circuit. The burst-mode CDR IC is implemented in a 0.13-µm CMOS process. It successfully operates at a data rate of 10.3125 Gb/s. The CDR IC using the edge-detection input amplifier and the G-VCO CDR core achieves amplification and synchronization in 0.2 ns with AC-coupling without a reset signal. The IC also demonstrates 1001 bits of CID tolerance, which is more than enough tolerance for 65-bit CIDs in the 64B/66B code of 10 Gigabit Ethernet. Measured data suggest that dual G-VCOs on a die have over a 20-MHz frequency difference and that the frequency adjusting between the G-VCOs is effective for increasing CID tolerance.

The switch LSI described here takes advantage of the special characteristics of fully-depleted CMOS/SIMOX devicesthat is, source/drain capacitances and threshold voltages that are lower than those of conventional bulk CMOS devicesto boost the I/O bit rate. The double-edge triggered MUX/DEMUX which uses a frame synchronization logic, and the active-pull-up I/O provide a 144-pin, 2. 5-Gbps/pin interface on the chip. The 220-kgate rerouting banyan switching network with 110-kbit RAM operates at an internal clock frequency of 312 MHz. The CMOS/SIMOX LSI consumes 8. 4 W when operating with a 2-V power supply, and has four times the throughput of conventional one-chip ATM switch LSIs.

This paper proposes an on-chip loop gain variation compensation architecture for a clock and data recovery (CDR) LSI. The CDR LSI using the proposed architecture can meet the jitter specifications recommended in ITU-T G.958 under wide variation of temperature and supply voltage. The relation between the jitter specifications and the loop gain is derived theoretically. Gain-variation characteristics of component circuits are studied by circuit simulation. The proposed architecture uses voltage controllers to reduce the gain variation of the LC voltage controlled oscillator (LC-VCO) circuit and charge-pump circuit. The voltage controllers are designed to have a first-order positive coefficient to temperature, which is found by an analysis of the gain variation characteristics. An STM-16 CDR with the proposed architecture is implemented in 0.20-µm fully depleted CMOS/SOI. The CDR shows a wide capture range of 140 MHz and meets both the jitter transfer and the jitter tolerance specifications in the ambient temperature range from -40 to 85 and with the supply voltage variation of 6%.

As a future passive optical network (PON) system, the 10 Gigabit Ethernet PON (10G-EPON) has been standardized in IEEE 802.3av. As conventional Gigabit Ethernet PON (GE-PON) systems have already been widely deployed, 1G/10G co-existence technologies are strongly required for the next system. A gated voltage-controlled-oscillator (G-VCO)-based 10-Gb/s burst-mode clock and data recovery (CDR) circuit is presented for a 1G/10G co-existence PON system. It employs two new circuits to improve jitter transfer and provide tolerance to 1G/10G operation. An injection-controlled jitter-reduction circuit reduces output-clock jitter by 7 dB from 200-MHz input data jitter while keeping a short lock time of 20 ns. A frequency-variation compensation circuit reduces frequency mismatch among the three VCOs on the chip and offers large tolerance to consecutive identical digits. With the compensation, the proposed CDR circuit can employ multi VCOs, which provide tolerance to the 1G/10G co-existence situation. It achieves error-free (bit-error rate < 10-12) operation for 10-G bursts following bursts of other rates, obviously including 1G bursts. It also provides tolerance to a 256-bit sequence without a transition in the data, which is more than enough tolerance for 65-bit CIDs in the 64B/66B code of 10 Gigabit Ethernet.

The 10-gigabit Ethernet passive optical network (10G-EPON) is a promising candidate for the next generation of fiber-to-the-home access systems. In the symmetric 10G-EPON system, the gigabit Ethernet passive optical network (GE-PON) and 10G-EPON will have to co-exist on the same optical network. For this purpose, an optical triplexer (10G-transmitter, 1G-transmitter, and 10G/1G-receiver) for optical line terminal (OLT) transceivers in 10G/1G co-existing EPON systems has been developed. Reducing the size and cost of the optical triplexer has been one of the largest issues in the effort to deploy 10G-EPON systems for practical use. In this paper, we describe a novel small and low-cost dual-rate optical triplexer for use in 10G-EPON applications. By reducing the optical path length by means of a light collection system with a low-magnification long-focus coupling lens, we have successfully miniaturized the optical triplexer for use in 10G-EPON OLT 10-gigabit small form factor pluggable (XFP) transceivers and decreased the number of lenses. A low-cost design of sub-assemblies also contributes to cost reduction. The triplexer's performance complies with IEEE 802.3av specifications.

This paper presents an area-effective bandwidth enhancement technique using interwoven inductors. Inductive peaking is a common practice for bandwidth enhancement, however the area overhead of inductors is a serious issue. We implement six or four inductors into an interwoven inductor. Furthermore parasitics of the inductors can be reduced. The proposed inductor is applied to a laser-diode driver in a 0.18 µm CMOS. Compared to conventional shunt-peaking, the proposed circuit achieves 1.6 times faster operation and 60% reduction in power consumption under the condition for the same amount of data transmission and the LD driving current. The interwoven inductor can reduce the circuit area by 26%. Parasitic capacitance in interwoven inductor is discussed. Simulation results reveal that line-to-line capacitance is a significant factor on bandwidth degradation.

A 4096-channel time-switch LSI with switching address protection is described. To achieve the large switching capacity, a double buffer architecture was adopted, and divided cell array structures were implemented using an automatic layout method. A 4096 w 1 b protection memory is included in the control memory to avoid snappings of paths through fixed switching addresses. The memory area and design complexity were reduced by developing a new method for constructing a memory array with variable capacities and multiple-WE (Write-Enable Signal) control systems. The chip was fabricated with 0.8 µm BiCMOS technology and operates at over 32 Mb/s with a power consumption of 1.2 W.

This paper presents a routing methodology and a routing algorithm used in designing Gb/s LSIs with deep-submicron technology. A routing method for controlling wire width and spacing is adopted for net groups classified according to wire length and maximum-allowable-delay constraints. A high-performance router using this method has been developed and can handle variable wire widths, variable spacing, wire shape control, and low-delay routing. For multi-terminal net routing, a modification of variable-cost maze routing (GVMR) is effective for reducing wire capacitance (net length) and decreasing net delay. The methodology described here has been used to design an ATM-switch LSI using 0. 25-µm CMOS/SIMOX technology. The LSI has a throughput of 40 Gb/s (2. 5 Gbps/pin) and an internal clock frequency of 312 MHz.

This paper describes the design and evaluation of a high-performance multicast ATM switch and its feasibility study, including its 40 Gbit/s LSI packaging. The multicast switch is constructed using a serial combination of rerouting networks and employs an adapted Boolean interval-splitting scheme for a generalized self-routing algorithm. Analysis and computer simulation results show that the cell loss probability is easily controlled by increasing the number of switching stages. It is shown that the switch configuration can be transformed into other patterns to be built from banyan-based subnetworks of arbitrary size for LSI packaging. It is also shown that an LSI chip integrating an 88 banyan-based subnetwork using 0. 25-µm CMOS/SIMOX technology can attain a 40-Gbit/s switching capability.