A method of planar curve classification, which is invariant to rotation, scaling and translation using the zerocrossings representation of wavelet transform was introduced. The description of the object is represented by taking a ratio between its two adjacent boundary points so it is invariant to object rotation, translation and size. Transforming this signal to zero-crossings representation using wavelet transform, the minimum distance between the object and model while shifting the signals each other, can be used as classification parameter.

This paper deals with an orthogonal functional expansion of a non-linear stochastic functional of a stationary binary sequence taking 1 with equal probability. Several mathematical formulas, such as multi-variate orthogonal polynomials, recurrence formula and generating function, are given in explicit form. A simple example of orthogonal functional expansion and stationary random seqence generated by the stationary binary sequence are discussed.

We frequently use a polynomial to approximate a complex function. This study shows a method which determines the optimum coefficients and the number of terms of the polynomial, and the error of the polynomial is estimated.

In the conventional sound field reproduction system with control of the transfer functions from the source to both ears of a listener, a slight shift of the ears caused by movement of the listener inevitably results in sound localization being different from that expected. In this paper, a method for reproducing a sound field by controlling the transfer function from the source to multiple points (called the "method of multiple-points control" hereafter) is applied to a sound reproduction system with the aim of expanding the area which can be controlled. The system is controlled so that the transfer functions from the input of the system to the multiple points adjacent to the original receiving points have the same desired transfer function. By placing the control points at appropriate intervals, a "zone of equalization" is formed. Based on a computer simulation, the intervals between control points is discussed. The configuration of the loundspeakers for sound reproduction is also discussed.

This paper deals with minimization of ESOPs (exclusive-or sum-of-products) which represent symmetric functions. Se propose an efficient simplification algorithm for symmetric functions, which guarantees the minimality for some subclass of symmetric functions, and present the minimum ESOPs for all 6-variable symmetric functions.

The parasitic bipolar effect in a 200-V-class thin-film SOI power MOSFET fabricated using the silicon wafer direct bonding wafer was investigated by electrical measurement, two-dimensional process simulation, emission microscopy, and 2-dimensional thermal analysis. It degraded the breakdown voltage of the thin-film SOI power MOSFET and was caused by the increase in the sheet resistance of the body contact region. Photo emission analysis indicated that excess holes recombined in the n+-source region.

A hierarchical fault tracing method for VLSIs with bi-directional busses from CAD layout data in the CAD-linked electron beam test system is described. When fault tracing reaches at a cell connected to a bi-directional bus, our method is able to judge the direction of the signal flow, input or output, by using waveforms acquired by an EB tester, in a consistent manner independently of circuit functions as with a previously proposed tracing method for circuits without bi-directional busses.

In this paper we describe the implementation of complex architectures using a general design approach for two-phase asynchronous systems. This fundamental approach, called Event Controlled Systems, can be used to widely extend the utility of two phase systems. We describe solutions that we have developed that dramatically improve the performance of static and dynamic-logic asynchronous pipelines, and briefly describe a complex microprocessor designed using ECS.

For low-voltage, high-speed operation of LSIs, the most attractive features in fully-depleted (FD) SOI devices are their steep subthreshold slope and reduced drain junction capacitance. This paper discusses the impact of these features on circuit performance. FD SOI devices can have a threshold voltage of more than 100 mV lower than that of bulk devices within the limits of acceptable off-state leakage current. Thus they hold higher driving current even at supply voltages of less than 1 V. On the other hand, the reduced junction capacitance is effective to suppress the total parasitic capacitance especially in lightly loaded CMOS circuits. These attractive features improve the speed performance in FD SOI circuits remarkably at supply voltages of less than 1 V. For high-speed circuit applications, 0.25-µm-gate SIMOX circuits, such as frequency dividers, prescalers, MUX, and DEMUX, can operate at up to 1-2 GHz even at a supply voltage of 1 V. CMOS/SIMOX logic LSIs also exhibit better performance at very low supply voltages. At merely 1 V, a SIMOX logic LSI could be functional at up to 60-90 MHz using 0.26-0.34 µW/MHz/Gate of power dissipation. Furthermore, SIMOX logic LSIs will allow 20-30 MHz operation at 0.5 V of a solar cell with reasonable chip size. These investigations lead to the conclusion that FD CMOS/SIMOX technology will have a large impact on the development of low-voltage high-performance LSIs for portable digital equipment and telecommunication systems.

Physical models for fully depleted (FD) and non-fully depleted (NFD) SOI MOSFETs are overviewed, and recent applications of them (in SOISPICE) are described, stressing the need for good physics-based accounting for the inherently coupled bipolar and MOS device features in reliable circuit design. The applications suggest that asymmetrical double-gate FD/SOI CMOS technology can be scaled below 0.1 µm, whereas the single-gate counterpart seemingly cannot be, and that the floating-body charge dynamics and the associated transient leakage current in NFD/SOI (and FD/SOI) pass transistors in memory (DRAM and SRAM) circuits can be effectively controlled by optimal device design.

This paper describes an analytic method, experimental results and simulation results for self-heating in a SOI (Silicon On Insulator) high voltage MOS transistor. The new analytic method enabled the temperature-rise caused by self-heating to be measured precisely. The temperature-rise in an operating transistor was evaluated by measuring the change of the source current against the source current without the self-heating. In advance, the relation between the temperature-rise and the current change had been prepared by measuring the current decrease when the hot-chuck temperature had been changed in iso-thermal condition. By using this method, the dependence of the temperature-rise or the current decrease on the operating condition or the thermal resistance were clarified. Furthermore, these measurement results and the thermal resistance which is calculated by a FEM analysis enabled a fully coupled electrothermal device simulation to be analyzed more precisely. The dependence of the current decrease on the buried oxide thickness were also calculated.

A 0.35 µm CMOS process for low-voltage, high-performance applications implemented in an ultra-thin-film SIMOX wafer: Shallow SIMOX, is described. Fully Depleted CMOS devices are realized in a 50 nm thick top Si film. Stable high speed, low-Vth transistors for low-voltage operation were developed by integrating a salicided dual gate process. Short-channel effects are suppressed by a novel channel-drain profile engineering. Low power consumption is achieved by the reduced diffusion capacitance of the SIMOX device and a thick, CMP planarized, intermetal dielectric to reduce metal interconnect capacitance's. Compared with the Bulk-Si CMOS devices, a factor of 1/5 reduction on power dissipation is achieved with this technology. A high ESD strength of 4 kV (HBM) demonstrates the applicability of this technology in advanced high-performance products.

We apply a novel methodology, based on statecharts, to the design of large scale asynchronous systems. The design is specified at multiple levels, simulated, animated, and compiled into synthesizable VHDL code by using the ExpressV-HDL CAD tool. We add a validation sub-system to chech correct operation. ExpressV-HDL is originally synchronous, but we employ it for asynchronous design by avoiding any design dependence on the clock, and simulating with fast clock and on-line delays. The tool is demonstrated through a simple FSM. The synthesized synchronous circuit can be converted into an asynchronous one. Some results of a post-synthesis conversion example are given.

This paper describes what happens when the silicon layer is extremely thinned. The discussion shows that quantum mechanical short-channel effects impose limits on the down-scaling of MOSFET/SOI devices. However, thinning the silicon layer should bring new possibilities such as mobility enhancement, velocity overshoot enhancement, suppression of band-to-band tunneling, suppression of impact ionization and so on. Furthermore, the non-stationary energy transport in extremely miniaturized ultra-thin MOSFET/SOI devices is also addressed from the viewpoint of hot-carrier immunity. Related device physics are also discussed in order to consider the design methodology for contemporary MOSFET/SOI devices and new device applications for the future.

We are working on an algorithm to optimize the logic circuits that can be realized on the super fine-grain parallel processing architecture. As a part of this work, we have developed an inverter reduction algorithm. This algorithm is based on modeling logic circuits as dynamical systems. We implement the algorithm in the PARTHENON system, which is the high level synthesis system developed in NTT's laboratories, and evaluate it using ISCAS85 benchmarks. We also compare the results with both the existing algorithm of PARTHENON and the algorithm of Jain and Bryant.

Signal Transition Graphs (STG's) are Petri nets, which were introduced to represent a behavior of asynchronous circuits. To derive logic functions from an STG, the reachability graph should be constructed. In the verification of STG's some method based on an Occurrence net (OCN) and its prefix, called an unfolding, has been proposed. OCN's can represent both causality and concurrency between two nodes by net structure. In this paper, we propose a method to derive a logic function by generating sub state space of a given STG using the structural properties of OCN.

We developed a 1200 dots-per-inch light emitting diode array (1200 dpi LED array) chip using a GaAs0.8 P0.2 epitaxial substrate for the first time. One LED array chip consists of 256 LEDs. In general, LED arrays are fabricated by vapor-phase zinc diffusion. From the viewpoint that shallow junctions should be formed to fabricate a very high-density LED array, solid-phase diffusion seems to be more suitable. We fabricated the LED array using selectively-masked solid-phase zinc diffusion, and the diffusion depth was controlled at 1 µm. The diffusion depth was uniform under the diffusion window. The ratio of the length of lateral diffusion to the diffusion depth was about 1.7. These features imply that Zn diffusion was well controlled. In the Zn diffusion, the carrier concentration in the Zn diffusion region was high enough and the sheet resistance of the diffusion region with a diffusion depth of 1 µm was low enough to obtain a sufficient level of emitted light power. The results of performance tests showed that the characteristics of the LED array chip are satisfactory for application in optical printer print heads, because of the array's highly-resolved near-field pattern characteristic, ample emitted light power, low emitted-light-power deviation, and long life.

In the data path circuits of asynchronous systems, logical faults may first manifest as undetectable, transient wrong codewords, in spite of encoding the inputs and the outputs and proper organization which enables the faults to be propagated to the primary outputs in the form of non-codewords. Due to this, the conventional methods of concurrent error detection (CED) using the logic (voltage) monitoring is not effective. In this paper, we suggest a mixed-signal approach to achieve CED for a class of asynchronous circuits, known as self-timed circuits. First, we show that it is impossible to guarantee the CED using logic monitoring of the primary outputs in spite of proper encoding and organization of self-timed circuits. Then, we discuss different manifestations of single stuck-at faults occurring during normal operation in these circuits. Finally, we present the feasibility of achieving CED using a built-in current sensor (BICS) along with encoding techniques.

In this paper, we discuss on accuracy of power dissipation medels for CMOS VLSI circuits. Some researchers have proposed several efficient power estimation methods for CMOS circuits. However, we do not know how accurate they are because we have not established a method to compare the estimated results of power consumption with power consumption of actual VLSI chips. To evaluate the accuracy of several kinds of power dissipation models in chip-level, block-level and gate-lebel etc., we have been (i) Measuring power consumtion of actual microprocessors, (ii) Estimating power consumption with several kinds of power dissipation models, and (iii) Comparing (i) with (ii). The experimental results show as follows: (1) Power estimation at gate level is accurate enough. (2) Estimating power of a clock tree independently makes estimation more accurate. (3) Area of each functional block is a good approximation of load capacitance of the block.

The quality of ELTRAN wafers has been improved by pre-injection in epitaxial growth, surface treatment just before bonding, high temperature annealing at bonding, high selective etching and hydrogen annealing. The pre-injection reduces defects. The surface treatment eliminates edge-voids. The high temperature bonding dramatically reduces voids all over the wafer. Hydrogen annealing is very effective for surface flattening and boron out-diffusion. In particular, the edge-void elimination by the surface treatment just before bonding is greatly effective for enlarging the SOI area and reduces the edge exclusion down to only two mm. The gate oxide integrity is well evaluated. This process promises high yield and through-put, because each of the steps can be independently optimized.