In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.

We have developed a capacitance sensor of frequency modulation for integrated touchpanels using amorphous In-Sn-Zn-O (α-ITZO) thin-film transistors (TFTs). This capacitance sensor consists of a ring oscillator, whose one stage is replaced by a reset transistor, sensing transistor, and sensing electrode. The sensing electrode is prepared as one terminal to form a sensing capacitor when the other terminal is added by a finger. The ring oscillator consists of pseudo CMOS inverters. We confirm that the oscillation frequency changes when the other terminal is added. This result suggests that this capacitance sensor can be applied to integrated touchpanels on flatpanel displays.

We present a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition, for applications in superconducting electronics (SCE) as an alternative to Nb/AlOx/Nb tunnel junctions. Josephson junctions with co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties: critical current density (Jc), capacitance (C), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and Nb concentration. Nonhysteretic Nb/NbxSi1-x/Nb junctions with IcRn products greater than 1 mV, where Ic is the critical current, and Jc values near 100 kA/cm2 have been fabricated and are promising for superconductive digital electronics. These barriers have thicknesses of several nanometers; this improves fabrication reproducibility and junction uniformity, both of which are necessary for complex digital circuits. Recent improvements to our deposition system have allowed us to obtain better uniformity across the wafer.

All MgB2 Josephson junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method. The junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap. The critical current was observed when the thickness of the amorphous boron was in the range of 5 nm to 20 nm. The critical current density was estimated to be 0.4 A/cm2 to 450 A/cm2. By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure.

A high-sensitivity pickup tube using HARP (high-gain avalanche rushing amorphous photoconductor) photoconductive film, which makes use of the avalanche multiplication phenomenon, has been studied for making a high-sensitivity television camera. The avalanche multiplication factor, i.e., sensitivity, was increased by thickening the film. A 35-µm-thick HARP film, which was more sensitive than the previous 25-µm-thick film with an avalanche multiplication factor of about 600, and a 2/3rd-inch pickup tube using the film were developed. Measurements on the pickup tube demonstrated that it had an avalanche multiplication factor of about 1000, low lag, and high resolution. Moreover, image defects caused by shooting of intense spot lights were investigated, and it was found that exposing the film to UV light before operation and controlling the temperature of the film during operation could suppress the defects.

We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparent property of the oxide TFT, the color filter and TFT array are positioned at the viewing side of the display. This novel "Front Drive" display structure facilitates the alignment of the color filter and TFT dramatically.

This paper describes a method for evaluating the performance of a small magnetic core loop antenna used for radio controlled watches. Recently, amorphous metal core loop antennas are used as built-in small antennas inside a metal case. It is difficult to perform electromagnetic simulation for amorphous core loop antennas because of the complicated laminate structure. Therefore, we modeled the amorphous metal core loop antenna as an equivalent bulk structure having anisotropic permeability property that we can simulate. We analyzed the receiving sensitivity of the amorphous antenna by calculating the antenna factor. The receiving sensitivity degrades remarkably when an antenna is inside a metal case. We performed further simulation to investigate eddy current losses that cause deterioration.

Development of ultrafast optical interfaces that can operate in sub-terahertz region is important to apply superconducting electronic devices to the high-end systems. We have performed several fundamental researches to realize the ultrafast optical input interface for superconducting electronic devices. Firstly, we observed optical response of amorphous Ge thin films, and the results indicated that an amorphous Ge photoconductive switch could stably operate in a terahertz frequency range as an optical-to-electrical signal converter in the low-temperature region below Tc of YBCO. Next, we have fabricated optical-to-electrical signal conversion system with photomixing technique, and we have demonstrated the generation and the detection of high frequency signals over 50 GHz. Finally, we have observed optical responses of a Josephson vortex flow transistor under irradiation of femtosecond laser pulses, and the results suggeste that the device has high potential as an optical interface.

The segregation of non-magnetic phases such as borosilicate and Cr was investigated by crystallization behavior during the surface and bulk crystallization of Co-based amorphous alloys. The concentration of metalloids (B and Si) determined the extent of grain boundary segregation of borosilicate glass during surface crystallization. During the bulk crystallization of (Co75Cr25)0.8Si5B15 amorphous alloy, solute rejection of Cr resulted in the nucleation of Cr-deficient ferromagnetic crystals and non-magnetic σ-phase was subsequently precipitated along the grain boundary. These results show that crystallization process, i.e. nucleation and growth can be controlled to optimize the microstructure to reduce media noises in Co-based recording media.

We have developed an ultrahigh-sensitivity "New Super-HARP" handheld camera, which has a sensitivity that is about 100 times as great as that of a CCD camera. The sensitivity of TV cameras is determined by the performance of the imaging device. We developed the world's first imaging device that achieves high sensitivity and high picture quality by using the avalanche multiplication phenomenon in an amorphous selenium photoconductive target. This "Super-HARP" pickup tube, which has already been used in TV production, has a selenium target 8-µm thick. It is about 10 times as sensitive as CCDs. We have now developed a greatly improved version of the Super-HARP tube with a target 25-µm thick. This improved version, called the New Super-HARP pickup tube, is about 10 times as sensitive as the Super-HARP pickup tube. The New Super-HARP handheld camera equipped with the new tubes has a maximum sensitivity of 11 lx at F8. This camera is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications.

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

It is known that amorphous continuous media such as TbFeCo have extremely low noise characteristics because of the structure of the continuous grainless medium. There is great interest in the use of amorphous media in magnetic recording. This study investigated the recording characteristics of the amorphous continuous medium by computer simulation using the Landau-Lifshitz-Gilbert equation. It was shown that the transition of the continuous medium is very sharp and the noise level very low. It was also shown that the recorded magnetization patterns of the continuous medium are distinct at the high recording density of 380 Gbit/inch2. We concluded that the continuous medium has great potential for use in ultra-high density recording.

In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).

The growth behavior of copper particle on crystalline and amorphous silicon surfaces has been investigated. The study reveals that the growth behavior of copper particle depends on the substrate condition. When samples are intentionally contaminated in ultrapure water, both crystalline and amorphous silicon surfaces show no difference in their contamination levels. However, copper particles were not observed on an amorphous silicon surface except dipping in dilute CuCl2 solution. The copper concentration on an amorphous silicon surface after dipping in a 0.5% HF solution is similar to the level after contaminating in ultrapure water. The copper contamination level on a crystalline silicon surface, except from CuCl2 solution, decreased two orders of magnitude as compared with ultrapure water. The copper impurity level on crystalline silicon surface was reduced by two orders by cleaning in a sulfuric acid-hydrogen peroxide mixture. The sulfuric acid-hydrogen peroxide mixture cleaning was not effective on an amorphous silicon surface. When native oxide pre-existed on an amorphous silicon surface before contamination, however, the sulfuric acid-hydrogen peroxide mixture cleaning was effective for removing copper impurity. Our results suggest that copper contamination on an amorphous silicon surface have the characteristics of bonding directly with silicon and/or existing in the native oxide, in contrast with the situation on crystalline silicon surface. After contamination with 1000 ppm copper in CuF2 solution, the etch rate of an amorphous silicon film in a 0.5% HF solution was approximately one order of magnitude faster than that of crystalline silicon. This is attributed to the difference in crystalline structure between crystalline silicon and amorphous silicon.

Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.

The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix(BM) resistivities. In the Ia-Vg characteristics, for a BM sheet resistance of about1 1012 Ω/, a high off current and large Vth shift were observed due to the back-gating effects when the BM is charged up. Accrding to the ac dynamic characteristics, there was almost no leakage due to the capacitive coupling between source and drain after 16.6 msec(one frame) when the BM sheet resistance was above 7 1013 Ω/ . It was found that hydrogenated amorphous silicon germanium(a-SiGe:H) film, which has enough optical density, with the sheet resistance above the order of 1014 Ω/ is a promising candidate for an inorganic BM on TFT array.

The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO2 film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.