Boolean functions used in the filter model of stream ciphers should have balancedness, large nonlinearity, optimal algebraic immunity and high algebraic degree. Besides, one more criterion called strict avalanche criterion (SAC) can be also considered. During the last fifteen years, much work has been done to construct balanced Boolean functions with optimal algebraic immunity. However, none of them has the SAC property. In this paper, we first present a construction of balanced Boolean functions with SAC property by a slight modification of a known method for constructing Boolean functions with SAC property and consider the cryptographic properties of the constructed functions. Then we propose an infinite class of balanced functions with optimal algebraic immunity and SAC property in odd number of variables. This is the first time that such kind of functions have been constructed. The algebraic degree and nonlinearity of the functions in this class are also determined.

Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.

nMOS-type and pMOS-type silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and the current-voltage characteristic and the frequency response of the APDs with and without guard ring structure were measured. The role of the guard ring is cancellation of photo-generated carriers in a deep layer and a substrate. The bandwidth of the APD is enhanced with the guard ring structure at a sacrifice of the responsivity. Based on comparison of nMOS-type and pMOS-type APDs, the nMOS-type APD is more suitable for high-speed operation. The bandwidth is enhanced with decreasing the spacing of interdigital electrodes due to decreased carrier transit time and with decreasing the detection area and the PAD size for RF probing due to decreased device capacitance. The maximum bandwidth was achieved with the avalanche gain of about 10. Finally, we fabricated a nMOS-type APD with the electrode spacing of 0.84µm, the detection area of 10×10µm2, the PAD size for RF probing of 30×30µm2, and with the guard ring structure. The maximum bandwidth of 8.4GHz was achieved along with the gain-bandwidth product of 280GHz.

The global avalanche characteristics measure the overall avalanche properties of Boolean functions, an n-variable balanced Boolean function of the sum-of-square indicator reaching σƒ=22n+2n+3 is an open problem. In this paper, we prove that there does not exist a balanced Boolean function with σƒ=22n+2n+3 for n≥4, if the hamming weight of one decomposition function belongs to the interval Q*. Some upper bounds on the order of propagation criterion of balanced Boolean functions with n (3≤n≤100) variables are given, if the number of vectors of propagation criterion is equal and less than 7·2n-3-1. Two lower bounds on the sum-of-square indicator for balanced Boolean functions with optimal autocorrelation distribution are obtained. Furthermore, the relationship between the sum-of-squares indicator and nonlinearity of balanced Boolean functions is deduced, the new nonlinearity improves the previously known nonlinearity.

We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.

This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) -- an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-and-multiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550 nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of -19.6 dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550 nm.

A high-sensitivity pickup tube using HARP (high-gain avalanche rushing amorphous photoconductor) photoconductive film, which makes use of the avalanche multiplication phenomenon, has been studied for making a high-sensitivity television camera. The avalanche multiplication factor, i.e., sensitivity, was increased by thickening the film. A 35-µm-thick HARP film, which was more sensitive than the previous 25-µm-thick film with an avalanche multiplication factor of about 600, and a 2/3rd-inch pickup tube using the film were developed. Measurements on the pickup tube demonstrated that it had an avalanche multiplication factor of about 1000, low lag, and high resolution. Moreover, image defects caused by shooting of intense spot lights were investigated, and it was found that exposing the film to UV light before operation and controlling the temperature of the film during operation could suppress the defects.

A silicon lateral photodiode is fabricated by standard 0.18 µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22 µm and the electrode spacing of 0.6 µm. At 830 nm wavelength, the responsivity is 0.12 A/W at low bias voltage, and is increased to 0.6 A/W due to avalanche amplification. The bandwidth is also enhanced from 12 MHz at low bias voltage to 100 MHz at the bias voltage close to the breakdown voltage.

Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.

The performance of avalanche photodiodes with deep guard rings for Geiger mode operation is studied. The electric field distribution is calculated using the finite element method and the carrier multiplication characteristic is calculated along typical lines in the device. The nonlinear dependence of the ionization rates on the electric field strength can make a guard ring less effective in Geiger mode operation. The maximum single photon detection efficiency that can be obtained without breakdown at the guard ring is calculated for several structure parameters. It is shown that the single photon detection efficiency strongly depends on the guard ring design.

Competition of two-photon and one-photon absorption in Si-APD was studied. Device should be cooled down in order to clearly observe two-photon absorption at low illumination intensity. Passive Geiger mode operation was studied to sensitively detect small number of carriers generated by two-photon absorption. The illumination intensity dependence of the photocurrent pulse count number is well explained by taking into account the two absorption mechanisms and a dead time period that depends on bias voltage.

The performance of an indium-gallium-arsenide avalanche photodiode serving as a 1550 nm single-photon detector is investigated. Quantum efficiency is evaluated for laser pulses with an average of < 0.015 photons per pulse, which are important for the demonstration of unconditionally secure quantum key distribution [G. Brassard et al.: Phys. Rev. Lett. 85, 6, p.1330 (2000)]. An operating temperature of 243 K is achieved by thermo-electrical cooling, yielding a quantum efficiency of 18% with a dark-count probability per gate of 2.8 10-5. The results obtained here guarantee unconditionally secure fiber-optic quantum key distribution over 50 km.

We have developed an ultrahigh-sensitivity "New Super-HARP" handheld camera, which has a sensitivity that is about 100 times as great as that of a CCD camera. The sensitivity of TV cameras is determined by the performance of the imaging device. We developed the world's first imaging device that achieves high sensitivity and high picture quality by using the avalanche multiplication phenomenon in an amorphous selenium photoconductive target. This "Super-HARP" pickup tube, which has already been used in TV production, has a selenium target 8-µm thick. It is about 10 times as sensitive as CCDs. We have now developed a greatly improved version of the Super-HARP tube with a target 25-µm thick. This improved version, called the New Super-HARP pickup tube, is about 10 times as sensitive as the Super-HARP pickup tube. The New Super-HARP handheld camera equipped with the new tubes has a maximum sensitivity of 11 lx at F8. This camera is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications.

Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.

In this paper, we propose a TCAD driven hot carrier reduction methodology of 3.3 V I/O pMOSFETs design. The hot carrier reliability of surface channel I/O pMOSFET having drain structure in common with core devices has a critical issue. It is substantially important for the high-reliability devices to reduce both drain avalanche and channel hot hole components. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and drive current (ION), SDE/HALO of both core and I/O transistors can be totally optimized for reduction of process-steps and/or photo-masks.

Both frequency- and time-domain analyses of glide signals from a PZT glide-slider flying over a laser zone-textured (LZT) thin film disk medium were used to determine the slider vibration at a small disk-slider clearance. Slider vibration was found to be particularly dependent on the uniformly placed laser bump and the effects due to the air-bearing stiffness over the LZT medium. We found that a high density of small, pointed laser bumps (10X) has a more distinct impact on airflow than large, jagged-rim craterlike laser bumps (1X) on the slider. We therefore investigated the effect of laser bump density on the slider vibration, and found that marginally higher laser bump density (3X versus 2X) results in higher slider vibration. While resonant vibration has been a major glide problem, the effects of laser bump density have also recently become important in the face of ultralow glide height, 0.5 µ" (12 nm). Its influence can be clearly observed when the disk-slider clearance becomes very small. At such an ultrasmall disk-slider clearance, even minimal slider vibration can be detrimental to the head-disk interface. Taking into account the various contributions of slider vibration and considering possible damage to the head-disk interface, it is clear that the optimization of laser bump design should go beyond just the glide height and coefficient of stiction. It should take into account the effects of laser bump height, density and spatial distribution on vibration-induced flying height variation while maintaining a low glide height and coefficient of stiction. An ideal LZT medium should therefore have low bump height to enable low glide height, i. e. , 0.5 µ" (12 nm), but specific bump shapes and sufficient density to achieve low stiction. Laser bump density should, however, be controlled to moderate its effect on slider vibration and possibly disk-slider collision (297 words).

A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) passive waveguide is demonstrated. The absorption layer of the detector consisits of alternating layers of 66 Ge0. 44Si0. 56 and 480 Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0. 2 A/W at 1. 3 µm wavelength.

S-boxes (vector output Boolean functions) should satisfy cryptographic criteria even if some input bits (say, k bits) are kept constant. However, this kind of security has been studied only for scalar output Boolean functions. SAC (k) is a criterion for scalar output Boolean functions of this type. This paper studies a generalization of SAC (k) to vector output Boolean functions as the first step toward the security of block ciphers against attacks which keep some input bits constant. We first show a close relationship between such Boolean functions and linear error correcting codes. Then we show the existence, bounds and enumeration of vector Boolean functions which satisfy the generalized SAC (k). A design method and examples are also presented.

For symmetric cryptosystems, their transformations should have nonlinear elements to be secure against various attacks. Several nonlinearity criteria have been defined and their properties have been made clear. This paper focuses on, among these criteria, the propagation criterion (PC) and the strict avalanche criterion (SAC), and makes a further investigation of them. It discusses the sets of Boolean functions satisflying the PC of higher degrees, the sets of those satisfying the SAC of higher orders and their relationships. We give a necessary and sufficient condition for an n-input Boolean function to satisfy the PC with respect to a set of all but one or two elements in {0,1}n{(0,...,0)}. From this condition, it follows that, for every even n 2, an n-input Boolean function satisfies the PC of degree n 1 if and only if it satisfies the PC of degree n. We also show a method that constructs, for any odd n 3, n-input Boolean functions that satisfy the PC with respect to a set of all but one elements in {0,1}n{(0,...,0)}. This method is a generalized version of a previous one. Concerned with the SAC of higher orders, it is shown that the previously proved upper bound of the nonlinear order of Boolean functions satisfying the criterion is tight. The relationships are discussed between the set of n-input Boolean functions satisfying the PC and the sets of those satisfying the SAC.

A simulation study on cylindrical semiconductor devices is described, where the internal behavior of power devices are analyzed under steady-state condition with considering heat generation. In simulation, circular cylindrical coordinate is used to consider the effect of three-dimensional spreading current flow with keeping calculation time and memory as in two-dimensional simulation. Numerical model is based on the well-known set of Shockley-Roosbroeck semiconductor equations--continuity equations for carriers and Poisson's equation, along with heat flow equation. Drift-diffusion approximation of carrier transport equations is used, taking temperature field as a driving force for carriers into account. Using the cylindrical simulator, numerical analysis of power MOSFETs, which integrate zener diodes to improve the avalanche capability, has been carried out. Results showed that, a parasitic bipolar transistor turns on under forward-biased condition in a power MOSFET with a zener diode. The highest lattice temperature takes place at source edge. Under reverse-biased condition, breakdown occurs at doughnut area around the bottom of source contact (at the upper region of zener junction), and the avalanche current flows detouring the base region of parasitic bipolar transistor which implies that secondary breakdown will be suppressed. The highest lattice temperature region under reverse-biased conditions is the same as the breakdown region. Without zener diodes, on the other hand, breakdown occurs ringing about the edge of source region, and the avalanche current flows through the base region of parasitic bipolar transistor which implies that even MOSFETs may suffer from the secondary breakdown. As channel length becomes short, breakdown caused by punchthrough becomes dominant at the edge of source region.