The conventional shape from focus (SFF) methods have inaccuracies because of piecewise constant approximation of the focused image surface (FIS). We propose a more accurate scheme for SFF based on representation of three-dimensional FIS in terms of neural network weights. The neural networks are trained to learn the shape of the FIS that maximizes the focus measure.

In this letter we propose a new Shape from Focus (SFF) method using piecewise curved search windows for accurate 3-D shape recovery. The new method uses piecewise curved windows to compute focus measure and to search for Focus Image Surface (FIS) in image space. The experimental result shows that our new method gives more accurate result than the previous SFF methods.

We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn=2nVJ, where VJ=f0h/2e in two-junction arrays. The microwave power dependence of I-V curves shows the steps corresponding to the RSJ model.

YBa2Cu3O7-δ co-planar Josephson junctions by Focused Ion Beam were characterized by changing the thickness of YBa2Cu3O7-δ films. The junctions had the thickness dependence of the characteristics. The characteristics were dominantly divided into two types. One had the I-V curve of a flux-flow junction and a weak magnetic response. The other had the I-V curve of RSJ, the IcRn product from 0. 1 mV to 0. 5 mV at 4. 2 K, and a good magnetic response. The critical current density of the junctions increased exponentially with increasing film thickness. From the observation of the junction surface, the junction length was decreased with increasing film thickness by the horizontal growth of the normally grown YBaCuO. In the thicker film (above 240 nm), the microshorts of the normally grown YBaCuO on the abnormally grown YBaCuO area were observed. It is considered that the main part of Josephson current for the junctions changes from the abnormally grown YBaCuO to microshorts when increased with the film thickness.

We have developed a new autofocus method using image processing techniques. This method consists of two steps. The first step is the preset of an objective lens condition with the aid of the feedback of Z-sensor. Next, a hole pattern to be measured is detected using the pattern recognition. In the second step, the E-beam is shifted to the center of a hole pattern and scanned across the axis of a pattern. The exciting current of the objective lens is changed at constant intervals, where the center position of the range is the preset value of the Z-sensor. The best focus condition is determined based on the signal profile obtained by the autofocus scan. The measurement repeatability (3σ) can be achieved within 3. 9 nm. The percentage of success of 98. 7% can be realized in the present autofocus method.

Logic operations in principle have been demonstrated based on the planar high-Tc Superconducting QUantum Interference Device (SQUID). Two kinds of logic gates were produced by using the focused ion beam (FIB) superconducting weak links fabricated in NdBa2Cu3O7-δ (NBCO) thin films. Logic gates investigated in this paper are (1) an rf-SQUID based logic gate which utilizes threshold characteristics, and (2) a dc-SQUID based logic gate which is an elementary gate of RSFQ circuits. Elementary logic operation such as (1) AND/OR logic and (2) SET-RESET flip-flop operation were successfully obtained in the logic gates. In addition to the present experimental results, some problems and future prospects are also discussed.

Narrow-band ISDN services may experience nonstationary traffic conditions. Therefore, switch design should take account of these conditions. We propose new performance measures for switching systems and describe a traffic model, which is a mixture of stationary Poissonian traffic and momentarily focused traffic. On the basis of this model, performance measures are determined so as to satisfy grade of service requirements that are in effect during some short interval after the momentarily focused traffic enters the system. We also propose an overload control scheme that uses these new performance measures. Finally, we show practical and numerical examples for the performance measures and overload control scheme.

A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.

A 3-dimensional specific thickness profile was fabricated on a thin glass diaphragm lens to reduce aberration at short focal distances for greater dynamic focusing. The deformation of the diaphragm was calculated by stress analysis utilizing the Finite Element Method (FEM). Geometric non linearity is considered in the FEM analysis. The glass diaphragm is 10 mm in diameter and the average thickness is 11 µm. To obtain both a curved shape and an optical surface on the glass diaphragm, the 3-dimensional precision grinding technique was utilized. The processed shape matches the designed one with less than 0.3 µm deviation, and the average surface roughness is 0.005 µm. Optical characteristics of the dynamic focusing lens having a specific thickness profile, were measured by Modulation Transfer Function (MTF) measurement equipment. At a focal distance of 250 mm, the specific thickness diaphragm lens resolution is 10 cycles/mm, whereas, the uniform thickness diaphragm is 4 cycles/mm. Even at other focal distances, the specific thickness diaphragm shows superior optical characteristics in comparison with those of the uniform thickness diaphragm. The 3-dimensional profile diaphragm resolution is 2.5 times finer at a focal distance of 250 mm, thus, being capable of displacement control for variable optic devices. This was achieved by employing semiconductor processing methods in conjunction with precision grinding techniques which are necessary for fabricating micro structures.

Recent developments and case studies regarding VLSI device chip failure analysis are reviewed. The key failure analysis techniques reviewed include EMMS (emission microscopy), OBIC (optical beam induced current), LCM (liquid crystal method), EBP (electron beam probing), and FIB (focused ion beam method). Further, future possibilities in failure analysis, and some promising new tools are introduced.

A new phase shift lithography method has been developed that allows different integrated circuit features to be focused on different optical planes that conform to the wafer surface topography. In principle, each pattern in the circuit has its own unique focal plane. The direction and magnitude of each focus shift is determined by the design of the shifter patterns. This method is applicable for use with conventional opaque mask patterns and unattenuated phase shift patterns. The characteristics of this multiple-focus-plane technique have been evaluated experimentally and confirmed theoretically through mathematical modeling using TCC optical imaging theory. Experiments were conducted using i-line positive resist processes for different phase-shift patterns. This paper discusses the effects of changes in phase shift and recommends practical mask design approaches.

Optical parameters of KrF excimer laser stepper are optimized for 0.25 µm level patterning by means of a light intensity simulation method. The light intensity simulation method is applied conventional and two modified illuminations (annular and 4-point) to improve the depth of focus (DOF) at 0.25 µm periodic lines and spaces pattern (L&S). Simulation results obtained are; (1) the DOF of conventional illumination is not sufficient even in the optimum condition (NA=0.5, σ=0.8), (2) more than 1.5 µm DOF could be achieved with an annular illumination, if present resist performance is improved slightly, and (3) wider DOF is obtained in the case of with 4-point illumination. However, the DOF is rather degraded in the specific sized (near double/triple sized) region and oblique pattern, therefore the application of this illumination is restricted into some specific mask layout pattern.

It has become more important to shorten development periods of high performance computer systems and their LSIs. During debugging of computer prototypes, logic designers request very frequent LSI refabrication to change logic circuits and to add some functions in spite of their extensive logic simulation by several GFLOPS supercomputers. To meet these demands, an automated on-chip direct wiring modification system has been developed, which enables wire-cut and via-digging by a precise focused ion beam machine, and via-filling and jumper-writing by a laser CVD machine, directly on pre-redesign (original) chips. This modification system was applied to LSI reworks during the development of Hitachi large scale computers M-880 and S-3800, and contributed to shorten system debugging period by four to six months.

New focused ion beam (FIB) methods for microscopic cross-sectioning and observation, microscopic crosssectioning and elemental analysis, and aluminum film microstructure observation are presented. The new methods are compared to the conventional methods and the conventional FIB methods, from the four viewpoints such as easiness of analysis, analysis time, spatial resolution, and pinpointing precision. The new FIB methods, as a result, are shown to be the best ones totally judging from the viewpoints shown above.

The matrix whose eigenvectors are the basis vectors of the DCT is introduced. This matrix leads to a convolution-product property using the DCT. Based on the property, the parameter of uniform blur, such as motion blur or out-of-focus blur, is estimated from the local minima of the DCT energy spectrum of a blurred image. Computer experiments confirmed that the DCT is superior to the DFT for estimating the parameter.

Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.

A new redundancy technique especially suitable for ultra-high-speed static RAMs (SRAMs) has been developed. This technique is based on a decoding-method that uses two kinds of fuses without introducing any additional delay time. One fuse is initially ON and can be turned OFF afterwards, if necessary, by a cutting process using a focused ion beam (FIB). The other is initially OFF and can be turned ON afterwards by a connecting process using laser chemical vapor deposition (L-CVD). This technique is applied to a 64 kbit SRAM having a 1.5-ns access time. The experimental results obtained through an SRAM chip repaired using this redundancy technique show that this technique does not introduce any increase in the access time and does not reduce the operational margin of the SRAM.

Fabrication of 0.2 to 0.3 µm features is vital for future ultralarge scale integration devices. An area of particular concern is whether optical lithography can delineate such feature sizes, i.e., less than the exposure wavelength. The use of a phase shift mask is one of the most effective means of improving resolution in optical lithography. This technology basically makes use of the interference between light transmitting through adjacent apertures of the mask. Various types of phase shift masks and their imaging characteristics are discussed and compared with conventional normal transmission masks. To apply these masks effectively to practical patterns, a phase shifter pattern design tool and mask repair method must be established. The phase shifting technology offers a potential to fabricate 0.3 µm features by using the current i-line stepper, and 0.2 µm features by using excimer laser stepper.

A system is constructed for the processing of question-answer dialogue as a subsystem of the speech response device. In order to increase the adaptability to dialogue topics, rules for dialogue processing are classified into three groups; universal rules, topic-dependent rules and task-dependent rules, and example-based description is adopted for the second group. The system is disigned to operate only with information on the content words of the user input. As for speech synthesis, a function is included in the system to control the focal position. Introduction and guidance of ski areas are adopted as the dialogue domain, and a prototype system is realized on a computer. The dialogue example performed with the prototype indicates the propriety of our method for dialogue processing.

New illumination principle for photolithography is investigated. As the optical microlithography approaches its own limit, it becomes apparent that the simple extrapolation of the present technology is not sufficient for the future demands. This paper introduces the new imaging technology that overcomes such a boundary. First, the basic imaging formulae are analyzed and the illumination light is classified into 4 cases. 3-beam case and 2-beam case carry the object information, and the comparison of these 2 cases is carried out theoretically. It can be shown that the 2-beam case has greater depth of focus than that of the 3-beam case, though it has inferior contrast at the best focus. Since this degradation, however, has little effect, the enlargement of the depth of focus can be achieved. In reality, 2-dimensional imaging must be considered. Quadrupole effect can be deduced by the results of the analysis. It shows great improvement in the depth of focus near resolution limit. As it can be applied to the conventional masks, it can be a promising candidate for fhe future lithography. Experimental results are also shown to demonstrate the analysis.