Ramon M. RODRIGUEZ-DAGNINO Jorge J. RUIZ-CEDILLO Hideaki TAKAGI
Tracking mobile users in cellular wireless networks involves two basic functions: location update and paging. Location update refers to the process of tracking the location of mobile users that are not in conversation. Three basic algorithms have been proposed in the literature, namely the distance-based, time-based, and movement-based algorithms. The problem of minimizing the location update and paging costs has been solved in the literature by considering exponentially distributed Cell Residence Times (CRT) and Inter-Call Time (ICT), which is the time interval between two consecutive phone calls. In this paper we select the movement-based scheme since it is effective and easy to implement. Applying the theory of the delayed renewal process, we find the distribution of the number of cell crossings when the ICT is a mixture of exponentially distributed random variables and the CRT comes from any distribution with Laplace transform. In particular, we consider the case in which the first CRT may have a different distribution from the remaining CRT's, which includes the case of circular cells. We aim at the total cost minimization in this case.
We have developed 100 nm node CMOS technology, consisting of a 65 nm gate length and a 1.6 nm gate oxide thickness. The major transistor design issue is how to maintain drive current at supply voltage of only 1.0 V, while suppressing standby leakage current to a practical level for system-on-a-chip applications. In order to obtain thinner electrical equivalent oxide thickness with well-suppressed gate leakage current, we have adopted radical nitridation and poly-SiGe. We have also utilized low-energy ion-implantation, low-temperature CVD, and spike RTA technology to overcome the short channel effect. With supply voltage of 1.0 V, our generic transistor shows the drive current of 520/196 µA/µm with the off current of 0.5 nA/µm. We also designed high-speed (Ioff=5 nA/µm), ultrahigh-speed (Ioff=30 nA/µm) transistors, and low-standby power (Ioff=5 pA/µm), all of which can be deployed on the same chip.
Muhammad E.S. ELRABAA Mohab H. ANIS Mohamed I. ELMASRY
A new contention-free Domino logic (CF-Domino) that is especially suited for low threshold voltage (LVT) is reported. Its superior noise margin and speed over conventional Domino circuits for LVTs are demonstrated using HSPICE(R) simulations and a 0.25 µm CMOS technology with a supply voltage of 2.5 V. The impacts of the new technique on dynamic and leakage powers and area were evaluated. At a 3% area increase, and keeping the noise margins constant, the new CF-DOMINO achieves 20% less delay than conventional DOMINO as the threshold voltage scales from 450 mV down to 200 mV. It also achieved 13% less dynamic power and 5% less leakage at that threshold voltage.
Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO
We have proposed the high-density triangular parallel wire channel MOSFET on an SOI substrate and demonstrated the suppressed short channel effects by simulation and experiment. In this device structure, the fabrication process is fully compatible with the planar MOSFET process and is much less complicated than other non-planer device structures including gate-all-around (GAA) and double-gate SOI MOSFETs. In addition, our fabrication process makes it possible to double the wire density resulting in the higher current drive. The three-dimensional simulation results show that the proposed triangular wire channel MOSFET has better short channel characteristics than single-gate and double-gate SOI MOSFETs. The fabricated triangular parallel wire channel MOSFETs show better subthreshold characteristics and less drain induced barrier lowering (DIBL) than the single-gate SOI MOSFETs.
An electronic equivalent to the bank's safe-deposit box service is presented. It is a distributed key safeguarding protocol constructed from an ElGamal threshold cryptosystem. For long-term secrets, a proactive version is also suggested.
Under cutoff and threshold priority policies, we mathematically formulate a prioritized channel allocation problem which is combinatorial in nature. We then reduce that problem using the concept of pattern, and apply a simulated annealing approach to the reduced problem. Computational experiments show that our method works very well and the cutoff priority policy outperforms the non-prioritized complete sharing policy and the threshold priority policy.
In this paper, we treat visual secret sharing scheme (VSSS) for color images. We first evaluate the brightness of the decrypted color image under certain conditions on the mixture of colors. We obtain a general formula for the construction of VSSS using mixture of colors. We second propose an iterative algorithm for constructing VSSS in a practical situation. If we use the iterative construction, we have only to solve partial differential equations with small n even if n is actually large, where n denotes the number of participants. This iterative construction has never discussed in the both cases under the original images are black-white images and color images. Finally, we propose the way to embed a color image on each share for the case that the original image is color.
In the magnetic stimulation of the peripheral nerve fiber with the figure-of-eight coil, the nerve fiber beneath the figure-of-eight coil is considered to be stimulated with the lowest intensity when it is parallel to the junction of the figure-of-eight coil. However, some experimental studies with the magnetic peripheral stimulation showed that the large compound muscle action potential is elicited with the figure-of-eight coil oriented in the other directions. In the present study, we try to explain the cause of such a discrepancy with the analysis of the model of the magnetic nerve stimulation, and confirm the validity of the result obtained from the model analysis by the experimental study of the magnetic peripheral nerve stimulation. We show that the threshold for the nerve excitation become lowest not only when the junction of the figure-of-eight coil is parallel to the nerve fiber but also when that is perpendicular to the nerve fiber.
Mika RAUTIAINEN Timo OJALA Hannu KAUNISKANGAS
This paper proposes a methodology for detecting matte-surfaced objects on a scene using color information and spatial thresholding. First, a difference image is obtained via a pixel-wise comparison of the color content of a 'clean' reference image and a sample image. Then, spatial thresholding of the difference image is performed to extract any objects of interest, followed by morphological post-processing to remove pixel noise. We study the applicability of two alternate color spaces (HSV, CIE Lab) for computing the difference image. Similarly, we employ two spatial thresholding methods, which determine the global threshold from the local spatial properties of the difference image. We demonstrate the performance of the proposed approach in scene surveillance, where the objective is to monitor a shipping dock for the appearance of needless objects such as cardboard boxes. In order to analyze the robustness of the approach, the experiment includes three different types of scenes categorized as 'easy,' 'moderate,' and 'difficult,' based on properties such as heterogeneity of the background, existence of shadows and illumination changes, and reflectivity and chroma properties of the objects. The experimental results show that relatively good recognition accuracy is achieved on 'easy' and 'moderate' scenes, whereas 'difficult' scenes remain a challenge for future work.
Christos PAPAVASSILIOU Kristel FOBELETS Chris TOUMAZOU
Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
Yuh-Min TSENG Jinn-Ke JAN Hung-Yu CHIEN
In 2000, Wang et al. proposed a new (t,n) threshold signature scheme with (k,l) threshold shared verification. Meanwhile, integrating the idea of message recovery, they also proposed a (t,n) threshold authenticated encryption scheme with (k,l) threshold shared verification. However, this article will show that both proposed schemes are insecure, because any malicious attacker can obtain the group secret keys from two valid threshold signatures. Thus, the attacker may solely forge or verify a threshold signature. An improvement to overcome the attacks is proposed.
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Koichi FUKUDA
We propose an effective model that can reproduce the reverse short channel effect (RSCE) of the threshold voltage (Vth) of MOSFETs using a conventional process simulator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO2 interface. We also report the application to actual device design using our model. The calculation cost is much lower than for a pair diffusion model, and device design in an acceptable turn around time is possible.
Technology scaling will become difficult due to power wall. On the other hand, future computer and communications technology will require further reduction in power dissipation. Since no new energy efficient device technology is on the horizon, low power CMOS design should be challenged. This paper discusses what and how much designers can do for CMOS power reduction.
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA
A 1T2C-type ferroelectric memory cell, in which two ferroelectric capacitors with the same area are connected to the gate of an usual MOSFET with a SiO2/Si interface, was fabricated and characterized. The relations between various device parameters and characteristics of memory cell were investigated by using SPICE simulation. It was found from the simulation results that the memory window significantly changed by the device parameters, which means that the operation voltage of the memory cell can be well controlled by these parameters. The fabricated cell is composed of a stacked gate structure of Pt/SBT/Pt/Ti/SiO2/Si with the area ratio of the MOS capacitor (SO) to the ferroelectric capacitor (SF) of 6 or 10. Nonvolatile memory operation was confirmed, and the obtained memory window coincided with the simulated results qualitatively. Furthermore, the current on/off ratio in the read-out operation was larger than 3-order-of magnitude and the data retention time was longer than 6 104 seconds. It was also predicted that low voltage operation was possible if the device parameters were optimized.
Che-Shen YEH Yinyi LIN Yiyan WU
This paper focuses on the comparison of OFDM system channel estimation using time domain techniques and using frequency domain techniques. The channel model is based on the Taiwan DTV field-testing results, with static and dynamic multipath distortion. The simulation results prove that the channel estimation performance of the OFDM system in the time domain is better than in the frequency domain.
Shingo MIYAZAKI Kouichi SAKURAI Moti YUNG
We consider methods for threshold RSA decryption among distributed agencies without any dealer or trusted party. The first solution is a combination of two techniques by [9] and [7] . It demonstrates the feasibility of combining the distributed key generation and the RSA secure function application. The second solution is another approach making the distributed key distribution simpler and alleviating a burden of each shareholder in comparison with the first scheme. The latter scheme is newly developed technique based on [9] and further inspired by Simmons' protocol-failure of RSA (we believe that it is very interesting that a "protocol failure attack" be turned into a constructive method). Our comparison between these two schemes indicates a new measure of the performance of a distributed cryptographic protocol that consists of multiple stages.
Toshio HIGASHI Tsuyoshi YAMAMOTO Tsutomu ISHIKAWA Takuya FUJII Haruhisa SODA Minoru YAMADA
We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
Toshio HIGASHI Tsuyoshi YAMAMOTO Tsutomu ISHIKAWA Takuya FUJII Haruhisa SODA Minoru YAMADA
We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.
A secret sharing scheme allows a secret to be shared among a set of participants, P, such that only authorized subsets of P can recover the secret, but any unauthorized subset can not recover the secret. It can be used to protect important secret data, such as cryptographic keys, from being lost or destroyed without accidental or malicious exposure. In this paper, we consider secret sharing schemes based on interpolating polynomials. We show that, by simply increasing the number of shares held by each participant, there is a multiple assignment scheme for any monotone access structure such that cheating can be detected with very high probability by any honest participant even the cheaters form a coalition in order to deceive him.
Takeshi KAMIO Hisato FUJISAKA Mititada MORISUE
Multilayer feedforward neural network (MFNN) trained by the backpropagation (BP) algorithm is one of the most significant models in artificial neural networks. MFNNs have been used in many areas of signal and image processing due to high applicability. Although they have been implemented as analog, mixed analog-digital and fully digital VLSI circuits, it is still difficult to realize their hardware implementation with the BP learning function efficiently. This paper describes a special BP algorithm for the logic oriented neural network (LOGO-NN) which we have proposed as a sort of MFNN with quantized weights and multilevel threshold neurons. Both weights and neuron outputs are quantized to integer values in LOGO-NNs. Furthermore, the proposed BP algorithm can reduce high precise calculations. Therefore, it is expected that LOGO-NNs with BP learning can be more effectively implemented as digital type circuits than the common MFNNs with the classical BP. Finally, it is shown by simulations that the proposed BP algorithm for LOGO-NNs has good performance in terms of the convergence rate, convergence speed and generalization capability.