In this paper, authors propose a linear array antenna using two bifilar helical antenna elements placed along the helix axis to reduce beam direction movement according to frequency change. The beam direction movement of this proposed array antenna is smaller than that of a conventional bifilar helical antenna. Also, the gain of this proposed array antenna is higher than that of the conventional helical antenna for a cross point angle of radiation patterns at the different transmit and receive(Tx and Rx) frequencies. The conventional helical antenna is suitable for vehicle antennas in mobile satellite communication systems such as the MSAT system because it owns circularly polarized omni-directional radiation pattern and its thin pole form. However, this antenna has a disadvantage that the beam direction in an elevation plane moves according to frequency change. In the proposed array antenna, the beam direction movement is about 9 smaller than that of the conventional bifilar helical antenna on condition that antenna total length is 4.83 λ0, antenna diameter is 0.12 λ0, and frequency change is from 0.957f0 to 1.043f0(f0 is center frequency and λ0 is free space wavelength at f0). Also, the Tx and Rx gains of this proposed array antenna at the cross point angle between Tx and Rx beams are about 2 dB higher than that of the conventional bifilar helical antenna on the same condition.

A new superresolution technique is proposed for high-resolution estimation of the scattering analysis. For complicated multipath propagation environment, it is not enough to estimate only the delay-times of the signals. Some other information should be required to identify the signal path. The proposed method can estimate the frequency characteristic of each signal in addition to its delay-time. One method called modified (Root) MUSIC algorithm is known as a technique that can treat both of the parameters (frequency characteristic and delay-time). However, the method is based on some approximations in the signal decorrelation, that sometimes make problems. Therefore, further modification should be needed to apply the method to the complicated scattering analysis. In this paper, we propose to apply a time-domain null filtering scheme to reduce some of the dominant signal components. It can be shown by a simple experiment that the new technique can enhance estimation accuracy of the frequency characteristic in the Root-MUSIC algorithm.

A two-waveguide tapered velocity coupler is presented for a variable divider of optical beams. The coupler consists of one tapered slab waveguide in dimension and the other slab waveguide with a constant film thickness. It is assumed that the device is fabricated on a LiNbO3 substrate, with a push/pull external electric field parallel with the optic axis applied only in the film regions of the coupler. Various numerical simulations through the finite difference beam propagation analysis show that a wide range of dividing ratios from - 15 dB to 15 dB or more can be achieved with considerably small values of driving-voltage electrode-length product and that the dividing characteristics are stable over a wide range of frequencies.

This paper reports experimental results of a media synchronization mechanism which was proposed by the authors, focusing on the graceful recovery scheme. The proposed method consists of intra-stream and inter-stream synchronization mechanisms. The inter-stream synchronization control is performed after the intra-stream synchronization control over each media unit (MU) such as a video frame. Then, whether the intra-stream synchronization is still maintained or not is checked. In the experimental system, video and voice stored in a source workstation are transferred to a destination workstation via an FDDI network, and then they are synchronized and outputted at the destination (i.e., lip-synch). At the transmission of each MU, we simulate network delay jitters by generating a pseudo-delay which is exponentially distributed. Using the system, we have confirmed the validity of the mechanism. We also clarify how to set the threshold and parameter values defined in the mechanism by evaluating mean square error and average MU rate or by subjective assessment. Furthermore, we demonstrate that the intra-stream synchronization control for each streams in addition to the inter-stream control is necessary for high quality synchronization.

We studied effects of 50-200-keV electrons on semiconductor devices using BEASTLI (backscattered electron assisting LSI inspection) method. When irradiating semiconduc-tor devices with such high-energy electrons, we have to note two phenomena. The first is surface charging and the second is device damage. In our study of surface charging, we found that a net positive charge was formed on the device surface. The positive surface charges do not cause serious influence for observation so that we can inspect wafers without problems. The positive surface charging may be brought about because most incident electrons penetrate the device layer and reach the conducting substrate of the semiconductor device. For the device damage, we studied MOS devices which were sensitive to electron-beam irradiation. By applying a 400- annealing to electron-beam irradiated MOS devices, we could restore the initial characteris-tics of MOS devices. However, in order to recover hot-carrier degradation due to neutral traps, we had to apply a 900- annealing to the electron-beam irradiated MOS devices. Thus, BEASTLI could be successfully used by providing an apporopri-ate annealing to the electron-beam irradiated MOS devices.

An optoelectronic beam forming network (BFN) is presented for a single beam, 3-element phased array antenna that utilizes electrically controllable birefringence mode nematic liquid-crystal cells (ECB mode NLC cells) for phase shifting and amplitude control. In the circuit, a microwave signal is carried by a pair of orthogonal linearly polarized lightwaves (signal and reference lightwaves) using the optical heterodyning technique. Birefringence of liquid-crystals is utilized to selectively control the phase of the signal and reference lightwaves. Because an interferometer is formed on a single signal path, the complexity of the optical circuit is much reduced, compared to the BFNs based on arrays of Mach-Zender interferometers. A prototype circuit is built using laser sources of 1.3 µm, and its performance experimentally examined. With small deviations among the three cells, phase shifts of up to 240 degrees are achived for MW signals from 0.9 GHz to 20 GHz with good stability; attenuation of more than 18dB is achieved. An optoelectronic technique for parallel control of amplitude and phase of MW signals was developed.

This paper addresses approaches to enhancement of performance of the CMA (Constant Modulus Algorithm) adaptive array antenna in multipath environments that characterize the mobile radio communications. The cost function of the CMA reveals that it has an AGC (Automatic Gain Control) procedure of holding the array output voltage at a constant value. Therefore, if the output voltage by the initial weights is different from the object value, then the CMA may suffer from slow convergence because suppression of the multipath waves is delayed by the AGC behavior. Our objective is to improve the convergence characteristics by adopting the differential CMA for the adaptive array algorithm. First, the basic performance of the differential CMA is clarified via computer simulation. Next, the differential CMA is incorporated into the eigen-beamspace system in which the eigenvectors of the correlation matrix of array inputs are used in the BFN (Beam Forming Network). This BFN creates the optimum orthogonal multibeams for radio environments and works helpfully as a preprocessor of the differential CMA. The computer simulation results have demonstrated that the differential CMA with the eigen-beamspace system has much better convergence characteristics than the conventional CMA with the element space system. Furthermore, a modified algorithm is introduced which gives the stable array output voltages after convergence, and it is confirmed that the algorithm can carry out more successful adaptation even if the radio environments are changed abruptly.

An automatic transistor-level performance fault tracing method is proposed which is applicable to the case where only CAD layout data is available in the CAD-linked electron beam test system. The technique uses an integrated algorithm that combines a previously proposed transistor-level fault tracing algorithm and a successive circuit extraction from CAD layout data. An expansion of the algorithm to the fault tracing in a combined focused ion beam and electron beam test system which enables us to measure signals on the interconnections in the lower layers is also described. An application of the technique to a CMOS model layout with about 100 transistors shows its validity.

With a view to applying to the active matrix displays, micromechanical electrostatic switches having Si-N both-ends-fixed beam of size 1.4 µm by 23 µm grown with LP-CVD on Si wafer were studied about its kinetic switching characteristics, especially its switching speed and hysteresis behavior. Electrostatic beam sticking problems were improved with the additional inverse polarity and short duration pulse following on the turn-on signal. The switching beam deflection of 0.16 µm with the switching time of less than 100 nsec. was measured by tightly focused laser interferometric method. Observed turn-on threshold voltages were more than 30 V, and the on/off hysteresis widths were from one third to two thirds of its threshold voltage. The memory function was experimented for the 2 msec. long holding period with the hold voltage of 25 V following on the writing pulse with the duration of 2 µsec. and the amplitude of 32 V. Now, planarization process has been considered to imtroduce the contact electrodes that were not built-in for these experiments. Although conductive actual switches were not tested, with the obtained results, it seems that the micromechanical electrostatic switch has the large potentials as an active matrix element in display panel especially in electro-luminescent devices or field-emission devices.

This paper proposes a new type of optically controlled BFN (beam forming network), an electro-optic BFN using an optical waveguide structure. In this BFN, antenna beam forming is performed using conventional optical variable phase shifters and conventional optical variable directional couplers. An electro-optic BFN can easily utilize monolithic integration capability that will be advantageous to microwave stabilization. In order to discuss practical applicability, microwave characteristics and beam forming characteristics were examined using an experimental BFN fabricated on a LiNbO3 substrate. Resulting from electro-optic lightwave control, linear phase shifting and variable amplitude distribution were measured at various microwave frequencies. Without any other control except for optical offset frequency locking and applying constant voltages, typical short term fluctuation in L-band microwave was measured to be within 3 degreesp-p in phase and 2.5 dBp-p in amplitude, respectively. For the first time, an electro-optic BFN was successful in performing beam forming in an L-band array antenna as well as coaxial cables. It was also verified that radiation pattern measured in 60 degree beam steering using the experimental BFN was comparable to that calculated using conventional microwave BFNs. The experimental results show the feasibility of utilizing an electro-optic BFN in future advanced microwave/millimeter-wave array antenna systems.

A full confocal Gaussian beam open resonator system that determines the dielectric properties of low-loss materials in the 60-GHz band is developed. To achieve high Q values a quasi-optical coupling method is used to feed the resonator. It is connected to a computer-controlled HP 8510C vector network analyzer for automatic measurement. The frequency variation method is used and the data are processed using the open resonator scalar theory. Results from 96% and 99.5% alumina samples with thicknesses ranging from 0.38 mm to 1 mm, are presented in the V band, with loss tangent values of the order of 100 µ radians. This system should be able to measure substrates as thin as less than 0.1 mm to 0.3 mm, which are the thicknesses of substrates in practical use.

A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.

A Monte Carlo method for the passage of electrons based on a single scattering model is developed. A code based on this method is operable on personal computers, and has been applied to analyze electron behavior in a layered system consisting of Ti (an accelerator window), air, cellulose triacetate (CTA) and backing material irradiated by 300 keV electrons. The energy spectra and the angular distributions of electrons on the CTA surface as well as depth distributions of energy deposition in the CTA for various backing materials have been obtained. Some of these results are compared with experiments, and show fairly good agreement.

In this paper, we report a new approach about parsing and searching problem for a given phonetic lattice. The approach is based on the Divide and Conquer (DC) strategy. By dividing the phonetic lattice, we first construct a PD-tree to represent this lattice, then, we parse through this PD-tree to identify the possible sentence which is supposed to be the speech utterance. Next, we propose a new search scheme called Downward Request (DR) search model to decrease the computation costs, and this search model gives us the optimal or N-best solutions. Experiments performed on Chinese speech recognition show us the good results.

This paper presents a new microprocessing method that uses a Cl2 fast atom beam (FAB) with stainless steel (SUS304) patterned masks. This new method uses the patterned mask instead of lithographically processed patterned photoresist materials employed in the conventional FAB microprocessing method. We examined the performance of this method by etching GaAs workpieces under various conditions: (1) by setting the distance between the mask surface and flat workpiece surface, L, from 0 µm to 500 µm; (2) by setting the angle between the FAB axis and the flat workpiece surface, θ; to either 30or 50. (3) by etching a workpiece surface that had a 15-µm step and two different surface textures, smooty and undulated; and (4) by doing overlapped etching using a square-patterned mask first and then a circular-patterned mask. The experiments show that the accuracy of reproducing the mask pattern on the etched surface increases with decreasing L. Moreover, the etching rate is almost the same (L100 µm) and decreases slightly at longer distance (L100 µm). The experiments also show that the side walls of the surface are parallel to the FAB axis, even for θ0, indicating that anisotropic etching can be achieved. The experiments for the stepped surface with different surface textures show the surface texture is not affected by the FAB etching. The overlapped etching experiments show that FAB etching is capable of producing overlapped structures. These results demonstrate that this new FAB method can be used in the microproduction of multi-faced, overlapped, three-dimensional microstructures.

A beam adaptive frame for finite-element beam-propagation analysis is proposed. The width of the frame can be adapted itself to either the guiding structure or the propagating beam in optical circuits, so the size of the computational window can be reduced.

A new type of variable beam splitter at optical frequencies is proposed. The basic structure of the device utilizes a tapered velocity coupler which is composed of a center slab waveguide of constant-thickness, constant-index type and two identical outer slab waveguides of constant-thickness, variable-index type. The coupler is assumed to be fabricated on a LiNbO3 substrate, whith an external electric field applied in parallel with the optical axis. The numerical results obtained with the finite difference method show that a wide range of splitting ratios can be obtained with moderate drive voltages and that the splitting characteristics are stable over a wide range of frequencies.

A method is presented for reconstructing the surface profile of a perfectly conducting rough surface boundary from the measurements of the scattered far-field. The proposed inversion algorithm is based on the use of the Kirchhoff approximation and in order to determine the surface profile, the Fletcher-Powell optimization procedure is applied. A number of numerical results illustrating the method are presented.

We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.51020 cm-3, while for δ-doped layers the sheet hole density as high as 2.61013 cm-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.

We propose a beam tracing frame which shifts together with either the guiding structure or the beam propagation in optical circuits. This frame is adaptive to the beam propagation analysis based on the finite-element method and can reduce the computational window size.