This article analyzes the property of the fully interconnected neural networks as a method of solving combinatorial optimization problems in general. In particular, in order to escape local minimums in this model, we analyze theoretically the relation between the diagonal elements of the connection matrix and the stability of the networks. It is shown that the position of the global minimum point of the energy function on the hyper sphere in n dimensional space is given by the eigen vector corresponding the maximum eigen value of the connection matrix. Then it is shown that the diagonal elements of the connection matrix can be improved without loss of generality. The equilibrium points of the improved networks are classified according to their properties, and their stability is investigated. In order to show that the change of the diagonal elements improves the potential for the global minimum search, computer simulations are carried out by using the theoretical values. In according to the simulation result on 10 neurons, the success rate to get the optimum solution is 97.5%. The result shows that the improvement of the diagonal elements has potential for minimum search.

A distributed processing system is described, which is dedicated to multilayer SOG routing. The system is constructed of global and detailed routers, each based on different rip-up and rerouting procedures, so as to be run on a computer network composed of a number of workstations. Several implementation results attained for five-layer SOG are also shown to reveal the practicability of the system.

Research in optical microwave interaction, at its earlier stages, was spured by the desire to make an optically fed and controlled phased array antenna with monolithic microwave integrated circuit (MMIC) transmit/receive (T/R) modules. In the first part of this paper experimental results are presented demonstrating an optically fed phased array antenna operating at C-band in the 5.5 to 5.8 GHz frequency range. The present system consists of two optically fed 14 subarrays with MMIC based active T/R modules. Custom designed fiber optic links have been employed to provide distribution of data and frequency reference signals to phased array antenna. One of the challenges of the future is the development of better interfaces between electronic (microwave) and optical components, including the chip level merging of photonic and electronic components on III-V compounds. This aspect of the research is covered in the second half of the paper.

This paper presents the successful performance of an optical waveguide phase controller for microwave signals generated by heterodyne photodetection. A 22 optical waveguide structure with four optical phase shifters was fabricated on a LiNbO3 substrate. As a result of heterodyne photodetection of two optical signals from wavelength-tunable laser diodes, two microwave signals at 585 MHz were generated and phase shifted in the manner of electro-optical phase retardation. The monolithic waveguide structure allowed linear phase shifting more than 1800 degrees. Similar phase shifting performances were also confirmed over a wide microwave frequency range from 300 MHz to 1.3 GHz. The optical waveguide structure demonstrated here will be applicable to fiber-optic fed microwave systems such as a phased array antenna.

This paper reviews the application of optical technologies to phased array antennas. The performance of the fibre transmission medium and of sources and detectors is reviewed, leading to simple expressions for transmission loss and noise performance. Both coherent and non-coherent beam forming techniques are considered. Future trends, including the use of optical amplifiers and coherent signal generation, will also be discussed.

The erosion of contact metal, which determines the life of contacts in the telephone switching system, is proportional to the arc energy. The equations for arc voltage, arc current, arc duration time and number of arcs are expressed explicitly in terms of circuit parameters and contact properties, and the expression is derived for arc energy that accompanies a single operation of contact closure. Contact erosion is consistent with the calculated arc energy. The erosion rate at closure is estimated based on the measured contact-erosion volume and the calculated arc energy. Arc energy at contact closure becomes as large as that at contact break if the cable is long or the supply voltage is high. This expression in combination with the expression for contact break enabled us to perform contact life design, which is indispensable for maintenance administration of telephone switching systems.

Given an integer N, it is easy to determine whether or not N is prime, because a set of primes is in LPP. Then given a composite number N, is it easy to determine whether or not N is of a specified form? In this paper, we consider a subset of odd composite numbers +1MOD4 (resp. +3MOD4), which is a subset of odd composite numbers consisting of prime factors congruent to 1 (resp. 3) modulo 4, and show that (1) there exists a four move (blackbox simulation) perfect ZKIP for the complement of +1MOD4 without any unproven assumption; (2) there exists a five move (blackbox simulation) perfect ZKIP for +1MOD4 without any unproven assumption; (3) there exists a four move (blackbox simulation) perfect ZKIP for +3MOD4 without any unproven assumption; and (4) there exists a five move (blackbox simulation) statistical ZKIP for the complement of +3MOD4 without any unproven assumption. To the best of our knowledge, these are the first results for a language L that seems to be not random self-reducible but has a constant move blackbox simulation perfect or statistical ZKIP for L and without any unproven assumption.

In this paper, we investigate the round complexity of zero-knowledge interactive proof systems of possession of knowledge, and mainly show that if a relation R has a three move blackbox simulation zero-knowledge interactive proof system of possession of knowledge, then there exists a probabilistic polynomial time algorithm that on input x{0,1}*, outputs y such that (x,y)R with overwhelming probability if xdom R, and outputs "" with probability 1 if x dom R. The result above can not be generalized to zero-knowledge interactive proof systems of possession of knowledge with more than four moves, because it is known that there exists a "four" move blackbox simulation perfect zero-knowledge interactive proof system of possession of knowledge for a nontrivial relation R.

In this paper, we investigate the discrepancy between a serial version and a parallel version of zero-knowledge protocols, and clarify the information "leaked" in the parallel version, which is not zero-knowledge unlike the case of the serial version. We consider two sides: one negative and the other positive in the parallel version of zero-knowledge protocols, especially of the Fiat-Shamir scheme.

The static characteristics of GaInAs(P)/GaInAsP quantum well laser diodes (QW LDs), with graded-index separate-confinement-heterostructure (GRIN-SCH) grown by metalorganic chemical vapor deposition (MOCVD), have been investigated experimentally in terms of threshold current density, internal waveguide loss, differential quantum efficiency and light output power. Very low threshold current density of 410 A/cm2, high characteristic temperature of 113 K, low internal waveguide loss of 5 cm-1, high differential quantum efficiency of 82% and high light output power of 100 mW were obtained in 1.3 µm GRIN-SCH multiple quantum well (MQW) LDs by optimizing the quantum well structure including confinement layer and cavity design. Excellent uniformity for the threshold current, quantum efficiency and emission wavelength was obtained in all MOCVD grown buried heterostructure GRIN-SCH MQW LDs. Lasing characteristics of 1.5 µm GRIN-SCH MQW LDs are also described.

To improve the stability and the power supply rejection ratio (PSRR) of the voltage limiter circuit used in high-density DRAM's we present a voltage limiter circuit with pole-zero compensation. Analytical expressions that describe the stability of the circuit are provided for comprehensive consideration of circuit design. Voltage limiters with pole-zero compensation are shown to have excellent performance with respect to the stability, PSRR, and circuit area occupation. The parasitic resistances in internal voltage supply lines, signal transmission lines, and transistors are important parameters determining the stability of pole-zero compensation. Evaluation of a 16-Mbit test device revealed internal voltage fluctuations of 6% during operation of a chip-internal circuit, a phase margin of 53, and a PSRR of 30 dB.

The characteristics of voltage-resonant dc-dc converters have already been analyzed and described. However, in the conventional analysis, the inductance of the reactor is assumed to be infinity and the loss resistance of the power circuit is not taken into account. Also, in some cases, the averaging method is applied to analyze the resonant dc-dc converters as well as the pwm dc-dc converters. Consequently, the results from conventional analysis are not entirely in agreement with the experimental ones. This paper presents a general design-oriented analysis of the buck-boost type voltage-resonant dc-dc converter in the continuous and discontinuous modes of the reactor current. In this analysis, the loss resistance in each part of the power circuit, the inductance of the reactor, the effective value (not mean value) of the power loss, and the energy-balance among the input, output and internal-loss powers are taken into account. As a result, the behavior and characteristics of the buck-boost type voltage-resonant dc-dc converter are fully explained. It is also revealed that there is a useful mode in the discontinuous reactor current region, in which the output voltage can be regulated sufficiently for the load change from no load to full load and for the relatively large change of the input voltage, and then the change in the switching frequency can be kept relatively small.

A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 µm. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample.

Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.

We have found out the effects of surfactant addition to developer on the developing characteristics: very uniform developing, scum-free developing, contact hole formation at lower exposure energy and substrate surfaces protection. Although these are excellent effects required for ULSI manufacturing, we have also discovered the problem that surfactant added to developer remains after the developing process. We has successfully established two effective methods for removing residual surfactant: the addition of 0.15 wt% hydrogen peroxide to surface-active developer, and 1-minute ozone-added ultrapure water rinsing at room temperature. We can therefore make best use of the developing characteristics of surface-active developer without any degradations.

In this paper, we propose a multi-purpose proof system which enables a user remembering only one piece of secret data to perform various proof protocols. These proofs include identity proof, membership proof without disclosing identity, and combined identity and membership proof. When a user participates in a group, he will obtain a secret witness from the group administrator. Many secret witnesses can be combined into one piece of secret data. But the size of the secret data is independent of the number of the groups in which the user participates. Our system satisfies other desirable properties which were not attained by the previously proposed systems.

An intermediate-frequency-combining (IF-combining) polarization diversity using frequency conversion is proposed. The proposed diversity requires no phase controller as opposed to the conventional IF-combining diversity. It has been theoretically clarified that this diversity has polarization insensitive bit-error-rate (BER) characteristics. The effectiveness has been confirmed by experiments in which the sensitivity dependence on the polarization is suppressed to within 0.8dB and a stable 101km fiber transmission at 600Mbit/s is achieved.

We have developed an efficient general-purpose two-dimensional device simulation system which consists of a solver, and pre- and post-processors. This system can easily handle any complicated device having a non-rectangular shape. It can also be applied to compound semiconductor devices with heterojunctions, including optical devices such as laser diodes. In order to handle any device, a new program for construction of device geometry is developed as a preprocessor. It has an efficient graphic interface to reduce the time required to input data for simulations, which is a very time consuming task for complicated devices. A new efficient data structure representing device geometry is introduced in the program. During postprocessing, any physical quantity can be displayed on the multi-window screen. In addition, a general-purpose solver for basic semiconductor equations is implemented in the system. Using this system, any device can be successfully analyzed in a unified manner and the turn-around time for the simulation is significantly reduced.