We describe 150-nm-thick collector InP-based double heterojunction bipolar transistors with two types of thin pseudomorphic bases. The emitter and collector layers are designed for high collector current operation. The collector current blocking is suppressed by the compositionally step-graded collector structure even at JC of over 500 kA/cm2 with practical breakdown characteristics. An HBT with a 20-nm-thick base achieves a high fT of 351 GHz at high JC of 667 kA/cm2, and a 30-nm-base HBT achieves a high value of 329 GHz for both fT and fmax at JC of 583 kA/cm2. An equivalent circuit analysis suggests that the extremely small carrier-transit-delay contributes to the ultrahigh fT.

We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSb/InP Double HBTs (DHBTs) and their microwave performance. The layer structure not only allows the implementation of InP collector free of current blocking, but also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction band discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE. Solid Si and CBr4 gas were used for n-type and p-type doing respectively. Fabricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62 V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 1.0 for both B-E and B-C junctions). Small DHBTs demonstrated VCEO > 8 V and stable operation at high current density exceeding 100 kA/cm2. Maximum fT of 57 GHz and maximum fmax of 66 GHz were achieved from 1 20 µm2 devices at similar bias condition: JC = 8.0 104 A/cm2 and VCE =3.5 V. The InGaAlAs/GaAsSb/InP DHBTs appear to be a very promising HBT solution having simultaneous excellent RF and DC performances.

TCAD is gaining acceptance in the heterostructure industry. This article discusses the specific challenges a device simulator must manage to be a useful tool in designing and optimizing modern heterostructure devices. Example simulation results are given for HEMTs and HBTs, illustrating the complex physical processes in heterostructure devices, such as nonlocal effects in carrier transport, lattice self-heating, hot-electron effects, traps, electron tunneling, and quantum transport.

We study the advantages and limitations of InP/GaAsSb/InP DHBTs for high-speed digital circuit applications. We show that the high-current performance limitation in these devices is electrostatic in nature. Comparison of the location of collector current blocking in various collector designs suggests a smoother, more gradual onset of blocking effects in type-II collectors. A comparison of collector current blocking effects between InP/GaAsSb--based and various designs of InP/GaInAs--based DHBTs provides support for our analysis.

High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (Lg) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance RS + RD are properly taken into account. By applying the new scheme to a device with Lg=0.25 µm, we obtained an effective high-field electron velocity of 1.75107 cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.

Field Configurable Self-assembly is a novel programmable force field based heterogeneous integration technology. Herein, we demonstrate application of the method to rapid, parallel assembly of similar and dissimilar sub-200 µm GaAs-based light emitting diodes at silicon chip substrates. We also show that the method is compatible with post-process collective wiring techniques for fully planar hybrid integration of active devices.

For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

In this paper, a new Hierarchical Sum of Double Difference metric, HSDD, is introduced. It is shown, as opposed to conventional Sum of Absolute Difference (SAD) metric, how this zerotree coding aware metric can jointly constrain the motion vector searching for both temporal and spatial (quad-tree) directions under multiresolution motion estimation framework. The reward from the temporal-spatial co-optimization concept of HSDD is that fewer bits are spent later for describing the isolated zeros. The embedded wavelet video coder using HSDD metric was tested with a set of video sequences and the compression performance seems to be promising.

The crucial handover elements in wireless ATM networks are handover delay and handover efficiency. Since the research about the handover in wireless ATM has until now focused mainly on minimizing handover delay, the results have shown the inefficiency of network resources. In broadband wireless ATM networks, handover efficiency is critical to network capacity. In this paper, we propose a new handover scheme based on a partial path rerouting scheme called the delay limited best-fit backtracking scheme. The scheme searches for the crossover switch that limits handover delay and at the same time maximizes handover efficiency. It uses a new crossover switch searching method, which is an adaptive backtracking searching method that uses a best-fit search manner, to search for the optimal crossover switch that satisfies the given crossover switch condition. We evaluated the performance of proposed handover scheme, and show that the suggested scheme can improve handover efficiency more than other handover schemes.

We present a new approach to the loop scheduling problem, which excels previous solutions in two important aspects: The resource constraints are formulated using flow graphs, and the initiation interval λ is treated as a rational variable. The approach supports heterogeneous processor architectures and pipelined functional units, and the Integer Linear Programming implementation produces an optimum loop schedule, whereby a minimum λ is achieved. Our flow graph model facilitates the cyclic binding of loop operations to functional units. Compared to previous research results, the solution can provide faster loop schedules and a significant reduction of the problem complexity and solution time.

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

A general circuit model of a filter having one cross coupling path is analyzed, and a new theory is developed for the design of a filter with transmission zeros in its stopband. By using the derived formulas, the reactance element values in the cross coupling path are determined readily. The transmission zeros can thus be assigned at desired frequencies. Various design examples are provided, together with simulated results, which validate the proposed theory.

An attenuation measurement system, which employs a traceable inductive voltage divider (IVD) at 1 kHz as a reference standard and dual channel intermediate frequency (IF) substitution method, is developed as an attenuation standard in the frequency range of 5 GHz to 12 GHz. The basic properties of the system are experimentally investigated and the expanded standard uncertainty of the system is estimated to be 0.0018 dB for 20 dB and 0.026 dB for 80 dB attenuation.

The present letter introduces a new approach to the construction of a set of ternary arrays having a zero-correlation zone. The proposed array set has a zero-correlation zone for both periodic and aperiodic correlation functions. As such, the proposed arrays can be used as a finite-size array having a zero-correlation zone. The proposed array sets can be constructed from an arbitrary Hadamard matrix. The member size of the proposed array set is close to the theoretical upper bound.

The present paper introduces a new approach to the construction of a class of ternary sequences having a zero-correlation zone. The cross-correlation function of each pair of the proposed sequences is zero for phase shifts within the zero-correlation zone, and the auto-correlation function of each proposed sequence is zero for phase shifts within the zero-correlation zone, except for zero-shift. The proposed sequence set has a zero-correlation zone for periodic, aperiodic, and odd correlation functions. As such, the proposed sequence can be used as a finite-length sequence with a zero-correlation zone. A set of the proposed sequences can be constructed for any set of Hadamard sequences of length n. The constructed sequence set consists of 2n ternary sequences, and the length of each sequence is (n+1)2m+2 for a non-negative integer m. The periodic correlation function, the aperiodic correlation function, and the odd correlation function of the proposed sequences have a zero-correlation zone from -(2m+1-1) to (2m+1-1). The member size of the proposed sequence set is of the theoretical upper bound of the member size of a sequence having a zero-correlation zone. The ratio of the number of non-zero elements to the the sequence length of the proposed sequence is also .

The dense wavelength division multiplexing (DWDM) technique is very attractive for effectively increasing the channel capability, even for access networks. Some DWDM radio-on-fiber (ROF) systems have been studied recently. In those systems, fiber Bragg gratings (FBG) or arrayed waveguide gratings (AWG) were used to demultiplex DWDM ROF signals. In this report, an alternative channel-selection scheme of DWDM millimeter-wave-band ROF signals by optical heterodyne detection with dual-mode local light is newly proposed. Error-free demultiplexing and transmission over a 25-km-long SMF of the DWDM signal, which consists of two 60-GHz-band, 155-Mb/s-DPSK ROF signals, are demonstrated.

We describe a low-cost and extremely stable millimeter-wave transmission system that uses a double-side-band (DSB) millimeter-wave self-heterodyne transmission technique. This technique allows us to use a comparatively low-cost and unstable millimeter-wave oscillator regardless of the modulation format. Furthermore, a transmission band-pass-filter (BPF) is not needed in the millimeter-wave band. The system cost can therefore be substantially reduced. We have theoretically and experimentally evaluated the carrier-to-noise power ratio (CNR) performance that can be obtained when using this technique relative to that attainable through a conventional millimeter-wave self-heterodyne technique where a single-side-band signal is transmitted. Our results show that the DSB self-heterodyne transmission technique can improve CNR by more than 3 dB.

This paper proposes a new dynamic multicast routing algorithm for layered streams. Since a layered multicast technique accommodates different types of users in the same multicast group, it helps to provide multicast services in a heterogeneous environment. However, this makes it difficult to construct an efficient routing tree when receivers join or leave a multicast session dynamically. In the proposed algorithm, we adopt a pre-determined path approach to handle such dynamic membership of a layered multicast session without the burden of much additional traffic. Simulation results show that the proposed algorithm can minimize the average multicast tree cost, and that it works well on large-scale networks and those with traffic heterogeneity and a small number of routing control messages.

The authors have been interested in a Scanning Laser Microscope (SLM) and applied it to studies of contact phenomena. In particular, a digital SLM is being currently used, and confirmed to be a successful tool for investigating the contact phenomena. In this paper, the theory and mechanism of a digital SLM are briefly explained, and some actual data obtained with the digital SLM are presented for demonstrating its usefulness for studies of contact phenomena.

In this paper, we analyze wavelet-based coding in a rate-distortion (R-D) sense by using Laplacian and Markov models and verify the results with the performance of the typical embedded coders, EZW and SPIHT, and the non-embedded coder implemented here. Laplacian represents the probability density function (pdf) of wavelet coefficients and Markov statistical dependency within and among subbands. The models allow us to easily understand the behavior of a thresholding and quantization part and a lossless coding part and associate the embedded coders with the nonembedded coder, which is the point the paper approaches. The analytic results are shown to coincide well with the actual coding results.