A new structure of the electro-optic modulator to compensate the third-order intermodulation distortion (IMD3) is introduced. The modulator includes two Mach-Zehnder modulators (MZMs) operating with frequency chirp and the two modulated outputs are combined with an adequate phase difference. We revealed by theoretical analysis and numerical calculations that the IMD3 components in the receiver output could be selectively suppressed when the two MZMs operate with chirp parameters of opposite signs to each other. Spectral power of the IMD3 components in the proposed modulator was more than 15dB lower than that in a normal Mach-Zehnder modulator at modulation index between 0.15π and 0.25π rad. The IMD3 compensation properties of the proposed modulator was experimentally confirmed by using a dual parallel Mach-Zehnder modulator (DPMZM) structure. We designed and fabricated the modulator with the single-chip structure and the single-input operation by integrating with 180° hybrid coupler on the modulator substrate. Modulation signals were applied to each modulation electrode by the 180° hybrid coupler to set the chirp parameters of two MZMs of the DPMZM. The properties of the fabricated modulator were measured by using 10GHz two-tone signals. The performance of the IMD3 compensation agreed with that in the calculation. It was confirmed that the IMD3 compensation could be realized even by the fabricated modulator structure.

We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.

For phase stabilization of two-tone coherent millimeter-wave/microwave carrier generation, two types of phase detection schemes were devised based on lightwave interferometric technique, the Mach-Zehnder interferometric method and the pseudo Mach-Zehnder interferometric method. The former system showed clear eye patterns at both OOK and PSK modulations of 1 Gbit/s on the 12.5-GHz carrier. The latter system demonstrated the error-free transmission at OOK modulation of 11 Gbit/s on the 100-GHz carrier.

We demonstrated generation of arbitrarily patterned optical pulse trains and frequency tunable terahertz (THz) pulses by spectral synthesis of optical combs generated by a Mach-Zehnder-modulator-based flat comb generator (MZ-FCG). In our approach, THz pulses were generated by photomixing of a multi-tone signal, which is elongated pulse train, and a single-tone signal. Both signals were extracted from a comb signal by using optical tunable bandpass filters. In the case of optical pulse train generation, the MZ-FCG generated comb signals with 10 GHz-spacing and 330 GHz-width, which was converted to a 2.85 ps-width pulse train by chirp compensation using a single-mode fiber. By combining the MZ-FCG with a pulse picker composed of a 40 Gbps intensity modulator, divided pulse trains and arbitrarily bit sequences were successfully generated. The single-mode light was extracted by an optical bandpass filter and the band-controlled pulse train was extracted by an optical bandpass filter. By photomixing them, a THz pulse was successfully generated. In the case of THz pulse generation, by photomixing a single-tone and a multi-tone signals extracted by tunable bandpass filters, THz pulses with a center frequency of 300 GHz was successfully generated. Furthermore, frequency tunability of the center frequency was also demonstrated.

An electro-optic (EO) modulator integrated with the microwave planar circuit directly formed on a LiNbO3 (LN) substrate for low frequency-chirp performance and compact configuration is introduced. Frequency chirp of EO intensity modulators was investigated and a dual-electrode Mach-Zehnder (MZ) modulator combined with a microwave rat-race (RR) circuit was considered for the low-chirp modulation. The RR circuit, which operates as a 180-degree hybrid, was designed on a z-cut LN substrate to create two modulation signals of the same amplitude in anti-phase with each other from a single input signal. Output ports of the RR were connected to the modulation electrodes on the substrate. The two signals of the equal amplitude drive two phase modulation parts of the modulator so that the symmetric interference are realized to obtain intensity modulation of low frequency-chirp. The modulator was designed and fabricated on a single LN substrate for around 10 GHz modulation frequencies and 1550 nm light wavelength. The chirp parameters were measured to be less than 0.2 in the frequency range between 8 and 12 GHz. By compensating imbalance of the light power splitting in the waveguide MZ interferometer the chirp could be reduced even more.

A reduction in the intensity deviation of a nine-channel optical frequency comb block (OFCB) is demonstrated, by adopting an asymmetric differential drive method for an InP-based dual drive Mach-Zehnder modulator. The generation of a tailored OFCB with an intensity deviation of less than 0.8dB is confirmed by using the modulator.

Radio over Fiber (RoF) is a promising technology that is suitable for broadband wireless access systems to cover in-building areas and outdoor dead-spots. However, one issue in RoF transmission that should be considered is the nonlinear distortion caused by Electrical/Optical (E/O) converters. Multicarrier RF (Radio Frequency) signal formats such as Orthogonal Frequency Division Multiplexing (OFDM), which are commonly employed in broadband wireless communications, are weak against nonlinearities. To enable the linear transmission of OFDM signal in RoF channel, we propose to employ the Envelop Pulse Width Modulation (EPWM) transmission scheme for RoF channel. Two commonly used E/O converters, Mach-Zehnder modulator and direct-modulation of Distributed Feedback Laser Diode (DFB LD), are employed to validate the proposal. Based on the measured nonlinearities of the E/O converters, they are mathematically modeled and their transmission performance are analyzed. A modified Rapp model is developed for the modeling of the DFB LD. Through simulations and experiments, the proposed scheme is shown to be effective in dealing with the nonlinearities of the E/O converters.

We propose a method of the precise frequency tuning in millimeter wave (MMW) generation using a Mach-Zehnder-modulator-based flat comb generator (MZ-FCG). The MZ-FCG generates a flat comb signal where the comb spacing is exactly the same as the frequency of a radio-frequency signal driving the MZ-FCG. Two modes are extracted from the comb signal by using optical filters. One of them was modulated by a phase modulator, creating precisely frequency-controllable sidebands. In the experiment, typical phase modulation was used. By photomixing of the extracted two modes using a high-speed photodiode, MMW signals with precisely frequency-controllable sidebands are generated. By changing the modulation frequency, the frequency of MMW signals can be continuously tuned. In this scheme, there are two methods for the frequency tuning of MMW signals; one is a coarse adjustment which corresponds to the comb spacing, and the other is fine tuning by the phase-modulation. It was demonstrated that the intensity fluctuation of the upper sideband of the modulated MMW signal was less than 1 dB, and the frequency fluctuation was less than the measurement resolution (300 Hz).

We evaluated the single side-band phase noise of a 40 GHz beat signal generated by two free-running lasers. This allowed us to verify the utility of the two free-running lasers is verified as a light source for a next-generation radio-over-fiber system using frequency such as those in the millimeter-wave and terahertz bands. We also measured the phase noise of a frequency quadrupler using a Mach-Zehnder modulator for comparison. The phase noise of the two free-running lasers and the frequency quadrupler are -63.85 and -95.22 dBc/Hz at a 10 kHz offset frequency, respectively.

We propose a polarization-multiplexing QPSK modulator for synthesis of a 16 QAM signal. The generation mechanism of 16 QAM is based on an electro-optic vector digital-to-analog converter, which can generate optical multilevel signals from binary electric data sequences. A quad-parallel Mach-Zehnder modulator (QPMZM) used in our previous research requires precise control of electric signals or fabrication of a variable optical attenuator, which significantly raises the degree of difficulty to control electric signals or device fabrication. To overcome this difficulty, we developed the polarization-multiplexing QPSK modulator, which improved the method of superposition of QPSK signals. In the polarization-multiplexing QPSK modulator, two QPSK signals are output with orthogonal polarization and superposed through a polarizer. The amplitude ratio between the two QPSK signals can be precisely controlled by rotating the polarizer to arrange the 16 symbols equally. Generation of 16 QAM with 40 Gb/s and a bit error rate of 5.6910-5 was successfully demonstrated using the polarization-multiplexing QPSK modulator. This modulator has simpler configuration than the previous one, utilized a dual-polarization MZM, alleviating complicated control of electric signals.

We present a full description of a polarization-independent athermal differential quadrature phase shift keying (DQPSK) demodulator that employs silica-based planar lightwave circuit (PLC) technology. Silica-based PLC DQPSK demodulator has good characteristics including low polarization dependence, mass producibility, etc. However delay line interferometer (DLI) of demodulator had the large temperature dependence of its optical characteristics, so it required large power consumption to stabilize the chip temperature by the thermo-electric cooler (TEC). We previously made a quick report about an athermal DLI to reduce a power consumption by removing the TEC. In this paper, we focus on the details of the design and the fabrication method we used to achieve the athermal characteristics, and we describe the thermal stability of the signal demodulation and the reliability of our demodulator. We described two athermalization methods; the athermalization of the transmission spectrum and the athermalization of the polarization property. These methods were successfully demonstrated with keeping a high extinction ratio and a small footprint by introducing a novel interwoven DLI configuration. This configuration can also limit the degradation of the polarization dependent phase shift (PDf) to less than 1/10 that with the conventional configuration when the phase shifters on the waveguide are driven. We used our demodulator and examined its demodulation performance for a 43 Gbit/s DQPSK signal. We also verified its long-term reliability and thermal stability against the rapid temperature change. As a result, we confirmed that our athermal demodulator performed sufficiently well for use in DQPSK systems.

We present recent progress of high-speed Mach-Zehnder modulator technologies for advanced modulation formats. Multi-level quadrature amplitude modulation signal can be synthesized by using parallel Mach-Zehnder modulators. We can generate complicated multi-level optical signals from binary data streams, where binary modulated signals are vectorially summed in optical circuits. Frequency response of each Mach-Zehnder interferometer is also very important to achieve high-speed signals. We can enhance the bandwidth of the response, with thin substrate. 87 Gbaud modulation was demonstrated with a dual-parallel Mach-Zehnder modulator.

We present a dual traveling-wave electrode InP-based Mach-Zehnder (MZ) modulator with an n-i-n waveguide structure. An electrical input/output interface placed on one side of the chip helps us to drive the modulator in a push-pull configuration. This configuration provides the modulator with great advantages such as reduced driving voltage amplitude, chirp-free operation, and the ability to support advanced modulation formats. The fabricated modulator exhibits good performance. A 40 Gb/s non-return-to-zero (NRZ) signal is successfully generated with a low driving of 1.3 Vpp. In addition, a 10-Gb/s optical duobinary (DB) signal is successfully generated and transmitted over a 240-km single-mode fiber (SMF). We also developed a wavelength tunable transmitter hybrid integrated with a modulator with a wavelength tunable laser. Full C-band 10-Gb/s operation and a 100-km SMF transmission with a low power penalty are confirmed.

We demonstrated all-optical demultiplexing of 160-Gb/s signal to 40- and 80-Gb/s by a Mach-Zehnder Interferometric all-optical switch, where the picosecond cross-phase modulation (XPM) induced by intersubband excitation in InGaAs/AlAsSb coupled double quantum wells is utilized. A bi-directional pump configuration, i.e., two control pulses are injected from both sides of a waveguide chip simultaneously, increases a nonlinear phase shift twice in comparison with injection of single pump beam with forward- and backward direction. The bi-directional pump configuration is the effective way to avoid damaging waveguide facets in the case where high optical power of control pulse is necessary to be injected for optical gating at repetition rate of 40/80 GHz. Bit error rate (BER) measurements on 40-Gb/s demultiplexed signal show that the power penalty is decreased slightly for the bi-directional pump case in the BER range less than 10-6. The power penalty is 1.3 dB at BER of 10 - 9 for the bi-directional pump case, while it increases by 0.3-0.6 dB for single pump cases. A power penalty is influenced mainly by signal attenuation at "off" state due to the insufficient nonlinear phase shift, upper limit of which is constrained by the current low XPM efficiency of 0.1 rad/pJ and the damage threshold power of 100 mW in a waveguide facet.

All-optical wavelength conversion and modulation format conversion will be needed in the next generation high-speed optical communication networks. We have proposed and successfully demonstrated the error free operation of all-optical modulation format conversion from NRZ-OOK to RZ-BPSK using SOA based MZI wavelength converter. In this paper, we experimentally investigate the wavelength conversion characteristics of the proposed NRZ-OOK/RZ-BPSK modulation format converter. The results show that error free modulation format conversion is possible over the entire C band.

The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.

A ridge-type Zn-indiffused Mach-Zehnder modulator operating at 1.55 µm wavelength is demonstrated on a z-cut LiNbO3 substrate for the first time. The measured results show that the values of voltage-length product can be reduced from 9.6 V-cm to 8.1 V-cm with the etched depth of 1.7 µm.

We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.

We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

We propose a simple method for the chromatic dispersion measurement of optical fibers by using bi-directional modulation of a Mach-Zehnder electro-optical modulator embodied in a fiber loop mirror. The detected output of the bi-directionally modulated light, with time difference, creates fading in the RF domain. Dispersion is found by measuring the period of fading at different wavelengths.