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1341-1360hit(1376hit)

  • A 3-7 GHz Wide-Band Monolithic Image-Rejection Mixer on a Single-Chip

    Akira MINAKAWA  Tsuneo TOKUMITSU  

     
    PAPER

      Vol:
    E76-C No:6
      Page(s):
    955-960

    This paper discusses the development of a monolithic image-rejection mixer with very wide-band (about 60% of the center frequency) image rejection characteristics for 16-QAM digital microwave radio communication receivers. The mixer can be commonly used in 4-, 5-, and 6-GHz bands, which reduces the cost. The mixer consists of a wide-band 90splitter, in-phase divider and drain LO injection mixers. They are designed on a single 2.81.8 mm2 GaAs chip based on a uniplanar MMIC lumped-constant element technique. The mixer achieved an image rejection ratio of greater than 25 dB and a conversion loss of less than 2 dB at a wide LO frequency range from 3.5 to 6.5 GHz, without consuming any DC power.

  • Usefulness of Spherical Model of Human Head in SAR Calculation for UHF Plane-Wave Exposure

    Osamu FUJIWARA  Koji UNO  

     
    LETTER-Electromagnetic Compatibility

      Vol:
    E76-B No:5
      Page(s):
    561-564

    This letter describes the usefulness of a homogeneous spherical model of the isolated human head in SAR calculation for UHF plane-wave exposure. Comparison is made between this SAR and several results that were computed and measured for the homogeneous but realistic whole-body model of the human by other researchers.

  • Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing

    Koji KOTANI  Tadahiro OHMI  Satoshi SHIMONISHI  Tomohiro MIGITA  Hideki KOMORI  Tadashi SHIBATA  

     
    PAPER-Device Technology

      Vol:
    E76-C No:4
      Page(s):
    541-547

    Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

  • Mechanical Optical Switch for Single Mode Fiber

    Masanobu SHIMIZU  Koji YOSHIDA  Toshihiko OHTA  

     
    PAPER

      Vol:
    E76-B No:4
      Page(s):
    370-374

    The 22 mechanical optical switch for single mode fiber (SMF) is reported. By using the precision grinding and molding techniques all-plastic multiple-fiber connector, 22 pin-referenced indirect slide switch is developed. The characteristics and the reliability test's results of this optical switch are also reported. Evaluations confirm that the switch has low insertion loss, high-speed switching, stable switching operations and reliability in practical applications.

  • Optimal Constraint Graph Generation Algorithm for Layout Compaction Using Enhanced Plane-Sweep Method

    Toru AWASHIMA  Masao SATO  Tatsuo OHTSUKI  

     
    PAPER

      Vol:
    E76-A No:4
      Page(s):
    507-512

    This paper presents an optimal constraint graph generation algorithm for graph-based one-dimensional layout compaction. The first published algorithm for this problem was the shadow-propagation algorithm. However, without sophisticated implementation of a shadow-front, complexity of the algorithm could fall into O(n2), where n is the number of layout objects. Although our algorithm, called the enhanced plane-sweep based graph generation algorithm, is an extension of the shadow-propagation algorithm, such a drawback is resolved by introducing an enhanced plane-sweep technique. The algorithm maintains multiple shadow-fronts simultaneously by storing them in a work-list called previous-boundary. Since a balanced search tree is selected for implementation of the worklist, total complexity of the algorithm is O(n log n) which is optimal. Experimental results show that the enhanced plane-sweep based graph generation algorithm runs in almost linear time with respect to the number of layout objects and is faster than the perpendicular plane-sweep algorithm which is also optimal in terms of time complexity.

  • Method for Measuring Glossiness of Plane Surfaces Based on Psychological Sensory Scale

    Seiichi SERIKAWA  Teruo SHIMOMURA  

     
    PAPER-Human Communication

      Vol:
    E76-A No:3
      Page(s):
    439-446

    Although the perception of gloss is based on human visual perception, some methods for measuring glossiness, in contrast to human ability, have been proposed involving plane surfaces. Glossiness defined in these methods, however, does not correspond with psychological glossiness perceived by the human eye over the wide range from relatively low gloss to high gloss. In addition, the change in the incident angle causes a deviation in the measurement of glossiness. A new method for measuring glossiness is proposed in this study. For the new definition of glossiness Gd, the brightness function is utilized. We also extract the value of smoothness of the object's surfaces for use as a factor of glossiness. The measuring equipment consists of a light source, an optical system and a personal computer. Glossiness Gd of paper and plastics is measured with the use of this equipment. In all samples, a strong correlation, with a correlation coefficient of more than 0.97, has been observed between Gd and psychological glossiness Gph. The variance of measured glossiness due to the change in the incident angle of light is small in comparison with that of conventional methods. Based on these findings, it has been found that this method is useful for measuring glossiness of plane objects in the range from relatively low gloss to high gloss.

  • Selective Mode-Control with Optically Induced Plasma on Coupled Microstrip Lines with a Tuning Slot

    Yasushi HORII  Tsutomu NAKAMURA  Takeshi NAKAGAWA  Sadao KURAZONO  

     
    PAPER-Optical/Microwave Devices

      Vol:
    E76-C No:2
      Page(s):
    207-213

    For a method to control the microwave coupled lines with optically induced plasma effectively, we propose the selective mode-control method, which restricts controlled modes to a selected one. We analyzed the basic characteristics of coupled microstrip lines theoretically by using the spectral domain technique and indicated the effectiveness of this method with the aid of numerical results. Further, we designed an optically controlled change-over switch as an application of this method.

  • Low Temperature Poly Si TFT and Liquid Crystal Polymer Composite for Brighter Video Projection System

    Masanori YUKI  

     
    INVITED PAPER-LSI Technology for Opto-Electronics

      Vol:
    E76-C No:1
      Page(s):
    86-89

    This paper reviews the development of low temperature poly Si TFT, scattering light valves addressed by TFTs and a brighter video projection system using them, with the attensin of their optical aspects. The first includes main feature which are laser induced crystallization of PECVD a-Si in almost entirely solid phase by high speed scanning CW Ar laser beam. The second includes photo-polymerization induced phase separation method for the preparation of liquid crystal polymer composite (LCPC) material and scattering light valve with low driving voltage of 6 Vrms. The last gives a brighter video screen image with high contrast ratio and includes higher light efficiency through LCPC light valves and projection lens unit by about four times than that of conventional LC light valves with polarizers.

  • Predicting the Next Utterance Linguistic Expressions Using Contextual Information

    Hitoshi IIDA  Takayuhi YAMAOKA  Hidekazu ARITA  

     
    PAPER

      Vol:
    E76-D No:1
      Page(s):
    62-73

    A context-sensitive method to predict linguistic expressions in the next utterance in inquiry dialogues is proposed. First, information of the next utterance, the utterance type, the main action and the discourse entities, can be grasped using a dialogue interpretation model. Secondly, focusing in particular on dialogue situations in context, a domain-dependent knowledge-base for literal usage of both noun phrases and verb phrases is developed. Finally, a strategy to make a set of linguistic expressions which are derived from semantic concepts consisting of appropriate expressions can be used to select the correct candidate from the speech recognition output. In this paper, some of the processes are particularly examined in which sets of polite expressions, vocatives, compound nominal phrases, verbal phrases, and intention expressions, which are common in telephone inquiry dialogue, are created.

  • A Linguistic Procedure for an Extension Number Guidance System

    Naomi INOUE  Izuru NOGAITO  Masahiko TAKAHASHI  

     
    PAPER

      Vol:
    E76-D No:1
      Page(s):
    106-111

    This paper describes the linguistic procedure of our speech dialogue system. The procedure is composed of two processes, syntactic analysis using a finite state network, and discourse analysis using a plan recognition model. The finite state network is compiled from regular grammar. The regular grammar is described in order to accept sentences with various styles, for example ellipsis and inversion. The regular grammar is automatically generated from the skeleton of the grammar. The discourse analysis module understands the utterance, generates the next question for users and also predicts words which will be in the next utterance. For an extension number guidance task, we obtained correct recognition results for 93% of input sentences without word prediction and for 98% if prediction results include proper words.

  • Models Based on the Markovian Arrival Process

    Marcel F. NEUTS  

     
    INVITED PAPER

      Vol:
    E75-B No:12
      Page(s):
    1255-1265

    This is a partly expository paper discussing how point processes with certain "bursty" features can be qualitatively modelled by the Markovian arrival process, a generalization of the Poisson or Bernoulli processes which can be used to obtain algorithmically tractable matrix solutions to a variety of problems in probability models.

  • A Mathematical Theory for Transient Analysis of Communication Networks

    Hisashi KOBAYASHI  Qiang REN  

     
    INVITED PAPER

      Vol:
    E75-B No:12
      Page(s):
    1266-1276

    In the present paper we present a mathematical theory for the transient analysis of probabilistic models relevant to communication networks. First we review the z-transform method, the matrix method, and the Laplace transform, as applied to a class of birth-and-death process model that is relevant to characterize network traffic sources. We then show how to develop transient solutions in terms of the eigenvalues and spectral expansions. In the latter half the paper we develop a general theory to solve dynamic behavior of statistical multiplexer for multiple types of traffic sources, which will arise in the B-ISDN environment. We transform the partial differential equation that governs the system into a concise form by using the theory of linear operator. We present a closed form expression (in the Laplace transform domain) for transient solutions of the joint probability distribution of the number of on sources and buffer content for an arbitrary initial condition. Both finite and infinite buffer capacity cases are solved exactly. The essence of this general result is based on the unique determination of unknown boundary conditions of the probability distributions. Other possible applications of this general theory are discussed, and several problems for future investigations are identified.

  • SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen

    Sadao NAKASHIMA  Katsutoshi IZUMI  

     
    PAPER-SOI Wafers

      Vol:
    E75-C No:12
      Page(s):
    1415-1420

    The threading dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been invenstigated using Secco etching, cross-sectional transmission electron microscopy and Raman spectroscopy. The breakdown voltage of the buried oxide layer has also been studied. The dislocation density is greatly affected by the dose and the wafer temperature during implantation. The SIMOX wafer implanted at 180 keV with a substoichiometric dose of 0.4 1018 O+ cm-2 at 550 and subsequently annealed at 1350 has an extremely low dislocation density on the order of 102 cm-2. The effect of the wafer temperature on the reduction of the dislocation density is discussed.

  • Planar Inductor for Very Small DC-DC Converters

    Toshiro SATO  Michio HASEGAWA  Tetsuhiko MIZOGUCHI  Masashi SAHASHI  

     
    PAPER

      Vol:
    E75-B No:11
      Page(s):
    1186-1191

    A newly developed planar inductor and its application to dc-dc converters are described. The planar inductor consists of a planar spiral coil and soft magnetic sheets, it has a small size (11110.8mm), 33µH inductance and a maximum quality factor of 14. The step down chopper dc-dc converter has been developed by using planar inductor, which has small size (20154mm), 5V-2W typical output and output power/volume ratio of 1.7W/cc. The switching converter can be miniaturized by using the planar inductor.

  • Intelligent Tutoring Systems for Plant Operation

    Masahiro INUI  

     
    PAPER-Education

      Vol:
    E75-A No:10
      Page(s):
    1438-1444

    OGIS Research Institute and Osaka Gas have developed two intelligent tutoring systems (ITSs): PCTS (Process Control Training System) and PDTS (Power Distribution Training System). This paper describes a basic concept of an ITS for plant operation based on the experience of their development. The topics include: (1) The features and structure of PCTS (i.e., text based training and model based training, a simulation model based on OOP, an intelligent authoring system). (2) What kinds of stages are needed for training systems from the view point of cognitive science (i.e., verbal learning multiple discrimination learning, rule learning, compound rule learning problem solving). (3) How to detect trainees' missing operational steps and misoperations using the perturbation method.

  • A Fuzzy-Theoretic Timing Driven Placement Method

    Ze Cang GU  Shoichiro YAMADA  Kunio FUKUNAGA  Shojiro YONEDA  

     
    PAPER

      Vol:
    E75-A No:10
      Page(s):
    1280-1285

    A new algorithm for timing driven placement based on the fuzzy theory is proposed. In this method, the signal delay on the longest path, the chip area and the total wire length can be simultaneously minimized. Introducing the probability measures of fuzzy events, falling down into the local optimal solutions can be avoided. At first, we define the fuzzy placement relation using the graph distance matrix and fuzzy distance relation matrix, and we give a new placement method based on the fuzzy placement relation and the probability measures of fuzzy events. Secondly, we extend this placement method so as to apply to the timing driven placement problem by introducing a fuzzy membership functions which represent the signal delay on the longest path and the chip area. Finally, experimental results are shown to compare our method with one of the previous methods.

  • Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique

    Takashi FUYUKI  Takeshi FURUKAWA  Tohru OKA  Hiroyuki MATSUNAMI  

     
    PAPER

      Vol:
    E75-C No:9
      Page(s):
    1013-1018

    Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50500 mTorr, activated oxygen species and SiH4 could collide with each other many times in the vapor phase. SiH4 was decomposed by chemical reactions due to the collisions generating chemically active precursors such as SiHn (0n3) for film deposition. Nearly stoichiometric films with low hydrogen content were obtained at low temperatures of around 300. Under a pressure of 5 mTorr, the oxygen species and SiH4 could scarcely collide with each other due to a long mean free path resulting no decomposition of SiH4. Insufficient surface reactions between relatively stable SiH4 and activated oxygen species yielded many O-H bonds in deposited films. Electrical properties of the films and the interfaces of SiO2/Si were characterized.

  • Half-Micron LOCOS Isolation Using High Energy Ion Implantation

    Koji SUZUKI  Kazunobu MAMENO  Hideharu NAGASAWA  Atsuhiro NISHIDA  Hideaki FUJIWARA  Kiyoshi YONEDA  

     
    PAPER

      Vol:
    E75-C No:9
      Page(s):
    972-977

    A new channel stop design for submicton local oxidation of silicon (LOCOS) isolation was presented. The n-channel stop was designed with boron implanation after forming LOCOS, while the p-channel stop was constructed with high energy phosphorus or arsenic implantation before or after forming LOCOS. These optimized channel stop designs can extend an isolation spacing to the submicron region without a decrease in junction breakdown voltage and an increase in junction leakage current. Narrow channel effects were found to be effectively suppressed by optimum channel stop design issues.

  • Diffusion of Phosphorus in Poly/Single Crystalline Silicon

    Hideaki FUJIWARA  Hideharu NAGASAWA  Atsuhiro NISHIDA  Koji SUZUKI  Kazunobu MAMENO  Kiyoshi YONEDA  

     
    PAPER

      Vol:
    E75-C No:9
      Page(s):
    995-1000

    Diffusion of phosphorus impurities from a polycrystalline silicon films into a silicon substrate was investigated as a function of the mean concentration of phosphorus in a polycrystalline silicon film at the first diffusion stage. We presented that good control of the redistribution of implanted phosphorus impurities was possible by optimizing the normalized dose, which is the value: [the total dose of phosphorus impurities]/[the polycrystalline silicon film thickness], in the case of samples both with and without an arsenic doped layers. In the range where the normalized dose was less than 1.52.51020 cm-3, deeper junctions were formed in samples with an arsenic doped layer. In the range where the normalized dose was more than 1.52.51020 cm-3, however, deeper junctions were formed in samples without any arsenic doped layer rather than in samples with an arsenic doped layer. These results mean that formation of the junction in the device structure where a high concentration phosphorus doped polysilicon layer is stacked on to the high concentration arsenic layer embeded at the surface of the substrate can be restricted by optimizing the normalized dose. Moreover, a trade-off relationship between suppressing phosphorus diffusion and maintaining low contact resistance against normalized doses was also observed.

  • A Study on Transmission Properties of YBa2Cu3Oy Coplanar Waveguide on LiNbO3 Substrate

    Kiichi YOSHIARA  Fusaoki UCHIKAWA  Ken SATO  Takashi MIZUOCHI  Tadayoshi KIYAYAMA  Masayuki IZUTSU  Tadashi SUETA  Katsuhiro IMADA  Hisao WATARAI  

     
    PAPER-Passive Devices

      Vol:
    E75-C No:8
      Page(s):
    888-893

    This paper describes on the transmission properties of the superconducting coplanar waveguide on LiNbO3 (LN) substrates, fabricated by YBa2Cu3Oy (YBCO) superconducting films. The films have been prepared by the reactive co-evaporation method and patterned by a wet etching process. The surface resistance of the obtained film was 0.04 Ω at 18 GHz and 77 K. It was confirmed from X-ray diffraction (XRD) that these films were highly oriented to the direction of c-axis without a secondary phase. The microwave transmission properties of these YBCO coplanar waveguides were investigated at frequencies up to 20 GHz and compared with that of the aluminum coplanar waveguide. The characteristic impedances of both coplanar waveguides were designed to be 50 Ω. It was found that the attenuation constants of these samples at 77 K were less than that of the aluminum coplanar waveguide for frequencies below 18 GHz.

1341-1360hit(1376hit)