A particle trajectory estimation method from far electromagnetic fields are discussed in this paper. Authors have already presented a trajectory estimation method for single particle system and good agreements between a source particle trajectory and an estimated one have been obtained. For this, this paper discusses twin particles system as an examples of multi-particles systems for simplicity. First of all, it is pointed out that far electromagnetic fields from the twin particles system show quite different aspect from the single particle system using an example, radiation patterns produced by two particles which carry out circular motion. This result tells us that any trajectory estimations for general multi-particles system are almost impossible. However, it is shown that when the distance between the particles is small, the estimation method for the single particle system can be applied to the twin particles system, and that twin particles effects appear as disturbance of estimated trajectory.

In this paper, the dispersion characteristics of magnetostatic surface waves (MSSW) in a nonlinear gyromagnetic medium are analytically investigated. Assuming the nonlinearity as the first order perturbation in permeability tensor of the gyromagnetic medium, the perturbation technique based on the multiple scale method is used to deduce the nonlinear dispersion relations for the MSSW. It is observed that for a given propagation constant of the MSSW the frequency decreases with microwave power. It is also observed that group velocity decreases, and as a consequence, delay time increases with power of the microwave. By evaluating the dependence of frequency on power and variation of group velocity on propagation constant within the accuracy of the perturbation theory, it is confirmed that the conditions for formation of bright soliton are not satisfied for the MSSW.

A new simple formulation of absorbing boundary conditions with higher order approximation is proposed for the solution of Maxwell's equations with the finite-difference time-domain (FD-TD) method. Although this higher order approximation is based on the third order approximation of the one-way wave equations, we have succeeded in reducing it to an equation in a form quite similar to the second order appoximation. Numerical tests exhibit smaller reflection errors than the prevalent second order approximation.

We can understand and recover a scene even from a picture or a line drawing. A number of methods have been developed for solving this problem. They have scarcely aimed to deal with scenes of multiple objects although they have ability to recognize three-dimensional shapes of every object. In this paper, challenging to solve this problem, we describe a method for deciding configurations of multiple objects. This method employs the assumption of coplanarity and the constraint of occlusion. The assumption of coplanarity generates the candidates of configurations of multiple objects and the constraint of occlusion prunes impossible configurations. By combining this method with a method of shape recovery for individual objects, we have implemented a system acquirig a three-dimensional information of scene including multiple objects from a monocular image.

This paper describes a new method to determine the 3-D position coordinates of a Lambertian surface from four shaded images acquired with an actively controlled, nearby moving point light source. The method treats both the case when the initial position of the light source is known and the case when it is unknown.

The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.

Learning correctly from queries" is a formal learning model proposed by Angluin. In this model, for a class Γ of language representations, a learner asks queries to a teacher of an unknown language Lq which can be represented by some GqΓ, and eventually outputs a language representation GΓ which represents Lq and halts. An algorithm (leaner) A is said to learn a class of languages represented by Γ in the weak definition if the time complexity of A is some polynomial of n and m, where n is the minimum size of the lagunage representations in Γ which represent Lq, and m is the maximum length of the counterexamples returned in an execution. On the other band, A is said to learn represented by Γ in the strong definition if at any point τ of the execution, the time consumed up to τ is some polynomial of n and m, where n is the same as above, and m is the maximum length of the counterexamples returned up to τ. In this paper, adequacy of the model is examined, and it is shown that both in the weak and strong definitions, there exist learners which extract a long counterexample, and identify Lq by using equivalence queries exhaustively. For example, there exists a learner which learns the class CFL of context-free languages represented by the class CFG of context-free grammars in the weak definition using only equivalence queries. Next, two restrictions concerning with learnability criteria are introduced. Proper termination condition is that when a teacher replies with yes" to an equivalence query, then the learner must halt immediately. The other condition, called LBC-condition, is that in the weak/strong definition, the time complexity must be some polynomial of n and log m. In this paper, it is shown that under these conditions, there still exist learners which execute exhaustive search. For instance, there exists a learner which learns CFL represented by CFG in the weak definition using membership queries and equivalence queries under the proper termination condition, and there also exists a learner that learns CFL represented by CFG in the strong definition using subset queries and superset queries under LBC-condition. These results suggest that the weak definition is not an adequate learning model even if the proper termination condition is assumed. Also, the model becomes inadequate in the strong definition if some combination of queries, such as subset queries and superset queries, is used instead of equivalence queries. Many classes of languages become learnable by our extracting long counterexample" technique. However, it is still open whether or not CFL represented by CFG is learnable in the strong definition from membership queries and equivalence queries, although the answer is known to be negative if at least one of (1) quadratic residues modulo a composite, (2) inverting RSA encryption, or (3) factoring Blum integers, is intractable.

This paper presents the history of Flash memories and the basic concept of their functions and also reviews a variety of Flash EEPROM's so far. As Flash memories have two influential features, non-volatility and low cost per bit, they are expected to become a driving force after DRAM's to support the semiconductor industry for the next thirty years, replacing hard and floppy disks which have a large market.

A low-voltage operation and highly-reliable nonvoltatile semiconductor memory with a large capacity has been manufactured using 0.8-µm CMOS technology. This 3-volt, 1-Mbit, full-featured MONOS EEPROM has a chip size of 51.3 mm2 and a memory cell size of 23.1µm2. An asymmetric programming voltage method fully exploits the abilities of the MONOS device and provides 10-year data retention after 106 erase/write cycles. Because of its wide-margin circuit design, this EEPROM can also be operated at 5 volts. High-speed read out is provided by using the polycide word line and the differential sense amplifier with a MONOS dummy memory. New functions such as data protection with software and programming-end indication with a toggle bit are added, and chips are TSOP packaged for use in many kinds of portable equipment.

For the study of the biological effects of ELF (Extremely Low Frequency) electric fields, the perception mechanism of ELF electric fields was analyzed. When a human body is exposed to an electric field, the hair on the body surface moves due to the electric force exerted on the hair. In theoretical analysis, it was shown that the force is approximately proportional to the dielectric constant of hair and the spatial gradient of the square of the electric field at the hair. The dielectric constant of hair was measured with different temperatures and humidities of the surrounding air. A technique was developed to estimate the electric force exerted on a hair during the field exposure. After experiments with model hair, the technique was applied to a body hair of a living human being. It was found that the force increased with field strength and relative humidity. The variations of the force agreed well with those expected from the theoretical analysis and the measurement of hair dielectric constants. These results explain the cause of the reported variation in the threshold of biological effects of an electric field. The results will help to establish a practical safety standard for the held exposure.

C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO2 of 50 nm are analyzed by using a test device with large equal channel width and length of 100 µm, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap densities change logarithmically from 31010 to 11012cm2eV1 as the Si-dose at 25 keV increases from zero to 31016cm2. Threshold-voltage changes caused by 25 keV implantaions are as high as 0.2 V. Effective mobilities (subthreshold swings) change from 600 (0.10) to 100 cm2/Vs (0.26 V/decade) as the Si-dose increases from 0 to 31016 cm2 at 25 keV, and both parameters are related with the change of interface trap densities. There is a close relationship between the hysteresis windows of gate current and threshold voltage, and the largest threshold voltage window in a low gate voltage region is obtained for the MOSFET with Si-implantation at 25 keV/31016 cm2.

To study the biological effects of the ion-current commonly found under ultra-high voltage DC transmission lines, a technique was developed to evaluate the human exposure to the ion-current field. This technique is based on numerical analysis using the boundary element method. The difficulty of handling the space charge in the calculation was overcome by assuming a lumped source ion-current. This technique is applicable to a three-dimensionally complex object such as a human body. In comparison with theoretical values, the accuracy of this technique was evaluated to be satisfactory for our purposes. It was then applied to a human body in an ion-current field. The distribution of the electric field along the body surface was obtained. The general characteristics of the field distribution were essentially the same as in those without space charges. However, it was found that the strength of the field concentration was significantly enhanced by the space charges. Further, the field exposure when a human body was charged by an ion-current was evaluated. As the charged voltage increases, the position of the field concentration moves from a human's head toward his legs. But the shock of micro spark increases. This technique provides a useful tool for the study of biological effects and safety standards of ion-current fields.

This paper surveys the researches on biological and electeromagnetic environments in RF (radio frequency) and microwave regions in Japan. Publicized research reports on biological objectives, evaluation of exposure rate, electromagnetic environments and guideline for the protection from radio wave nuisances are briefly introduced. Some researches on the evaluation of the exposure rate caused by the near field effect of portable radio transceiver are reviewed. Radio frequency exposer protection guidelines in Japan are also described.

The studies on the biological effects of ELF electric fields conducted in Japan are reviewed. Among international studies, they are characterized as the studies from the viewpoint of bioengineering. In early studies, the safety standard of high voltage transmission lines was determined by a distinct biological effect, i.e., the sensation of the spark discharge caused by electrostatic induction. In numerical analysis, the field coupling to both animal and human bodies became well understood. Some new measurement techniques were developed which enabled us to evaluate the field exposure on a human body. A system was developed to realize the chronic exposure of an electric field on mice and cats. An optical telemetry technique was developed to measure the physiological response of an animal when it was exposed to an electric field. An ion-current shuttle box was developed to investigate the behavioral change of a rat when it was exposed to an ion-current as well as an electric field. In animal experiments, a mechanism of sensing the field was investigated. The cause of the seasonal change of field sensitivity was found. In cases of chronic exposure, suppression of growth was suspected. In shuttle box studies, an avoidance behavior from an ion-current was quantified. To find whether there are any adverse or beneficial effects of the field exposure on human beings, further study is required to clarify the mechanisms of the biological effects.

The mechanism for data retention failure of EPROM has been investigated by the Optical Beam Induced Current(OBIC) technique. It was found that the data of failure cells were changed from '1' to '0' during read-mode by laser irradiation by OBIC. The data in good cells was not changed. This result suggests the effective barrier height between Si and SiO2 is being lowered. In addition, the cross section technique revealed that gate electrode and gate oxide were exposed due to lack of dielectric layers. This defect seemed to be the cause of the barrier height lowering. The OBIC technique not only gives the failure location but a detailed information of the failure mechanism. We found that OBIC technique is a very powerful tool for the analysis of EPROM failure mechanisms. The usefulness of the Emission Micro Scope (EMS) technique is also discussed.

This paper proposes a new method to determine the shape of a surface by learning the mapping between three image irradiances observed under illumination from three lighting directions and the corresponding surface gradient. The method uses Phong reflectance function to describe specular reflectance. Lambertian reflectance is included as a special case. A neural network is constructed to estimate the values of reflectance parameters and the object surface gradient distribution under the assumption that the values of reflectance parameters are not known in advance. The method reconstructs the surface gradient distribution after determining the values of reflectance parameters of a test object using two step neural network which consists of one to extract two gradient parameters from three image irradiances and its inverse one. The effectiveness of this proposed neural network is confirmed by computer simulations and by experiment with a real object.

A new multiple-valued mask-ROM cell and a technique suitable for data detection are proposed. The information is programmed in each of the memory cells as both the threshold voltage and the channel length of the memory cell transistor, and the stored data are detected by selecting the bias condition of both the word-line and the data-line. The datum stored in the channel length is read-out using punch-through effect at the high drain voltage. The feasibility of this mask-ROM's is studied with device simulation and circuit simulation. With this design, it would be possible to get the high-density mask-ROM's, which might be faster in access speed and easier in fabrication process than the conventional ones. Therefore, this design is expected to be one of the most practical multiple-valued mask-ROM's.

The exact characteristic equation for the hybrid modes in Goubau line is given. By solving the equation numerically we find the hybrid modes Lnm, defined in this paper. We also examine the propagation and attenuation constants of the hybrid modes. As a result the hybrid K12 mode has the extremely low attenuation at the specific frequency similar to the hybrid K11 mode. The electric field distributions of K11 and L11 modes are plotted.

An exact analysis for magnetostatic surface wave excitation by a single microstrip is presented. Conventional approaches for such an excitation problem do not explain experimental results in a reasonable manner. The theory proposed here explains radiation resistances obtained by experiments, owing to having considered the edge conditions and an expansion form of excitation current on the microstrip properly.

An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.