We show the design of the bandwidth and the external quantum efficiency (including the coupling efficency to a single-mode fiber) of p-i-n photodetectors. Based on their design procedures, the performance limits of both conventional surface-illuminated photodetectors and side-illuminated photodetectors are evaluated. We point out that in the ultrawide-band region, optical waveguide photodetectors have great advantages over conventional surface-illuminated photodetectors in terms of the product of the bandwidth and the external quantum efficiency. It is shown that a 100-GHz bandwidth can be achieved with little degradation of the external quantum efficiency by a multimode waveguide photodetector structure. We also present a design concept for overcoming the performance limits of solitary waveguide photodetectors by including an input tapered optical waveguide.

The various propagation characteristics of millimeter waves in silicon rib and image guides containing the optically induced plasma region have been investigated. Phase shift and attenuation properties resulting from the presence of plasma are evaluated using the effective dielectric constant method. Experiments have been carried out to demonstrate the optical control of millimeter waves at frequencies ranging from 3350 GHz using high-resistivity silicon illuminated by a high-power Xenon arc lamp and light emitting diodes. Optical control of millimeter wave attenuation of 20dB has been confirmed for a guide of length 90 mm and plasma density of 1021/m3 with average plasma thickness of 20 µm. To increase the sensitivity of optical control, Bragg reflection filter characteristics are studied and its stop band characteristics have been calculated using the transmission line model, and confirmed experimentally. To further develop the Bragg reflection filter, a Mach-Zehnder interferometer guide with one of the arms periodically corrugated is newly proposed and its optical control performance is confirmed by experiments. Finally the field distributions of the Mach-Zehnder configuration of rib waveguides are measured by a simple optical probing technique using the focused laser spot.

For a method to control the microwave coupled lines with optically induced plasma effectively, we propose the selective mode-control method, which restricts controlled modes to a selected one. We analyzed the basic characteristics of coupled microstrip lines theoretically by using the spectral domain technique and indicated the effectiveness of this method with the aid of numerical results. Further, we designed an optically controlled change-over switch as an application of this method.

This letter discusses a microstrip line with an open-end termination in which the reflected microwaves can be optically controlled by a laser illumination. The frequency characteristics are emphasized rather than the time domain ones. The reflection characteristics have been demonstrated experimentally and theoretically for the frequency range of 24 GHz. In the theoretical treatment both the conductance and the capacitance are considered in the equivalent circuit model of the open end of the strip.

An integrated optoelectronic multiplier based on GaAs optoelectronic device technology, is proposed. The key element is an optoelectronic half-adder logic gate, which is composed of only two GaAs metal-semiconductor-metal photodetectors (MSM-PD's). It operates with a single clock delay, less than 100 ps. An optoelectronic full-adder and a multiplier are also composed of half-adders and surface-emitting laser-diodes (SEL's). Cascadable gates with optical interconnections are integrated. Utilizing improved device fabrication technology, an optoelectronic high-speed multiplier with a minimum number of gates will be realized in LSI.

This paper reviews the development of low temperature poly Si TFT, scattering light valves addressed by TFTs and a brighter video projection system using them, with the attensin of their optical aspects. The first includes main feature which are laser induced crystallization of PECVD a-Si in almost entirely solid phase by high speed scanning CW Ar laser beam. The second includes photo-polymerization induced phase separation method for the preparation of liquid crystal polymer composite (LCPC) material and scattering light valve with low driving voltage of 6 Vrms. The last gives a brighter video screen image with high contrast ratio and includes higher light efficiency through LCPC light valves and projection lens unit by about four times than that of conventional LC light valves with polarizers.

Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g/i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.

In this letter authors discussed on the strategy to apply computerized tests on learners who have negative attitude to computerized tests. First, learners' image to computer system was measured by semantic differential method (SD method). It was revealed that the image of computer systems was made up of four factors of subjective evaluation (Es), objective evaluation (Eo), potency (P) and activity (A). Learners who have negative attitude to computerized test were revealed to have negative image on (Es) and (A) factors, while on the other hand have rather positive image on (Eo) and (P) factors. Then authors developed the feedback record charts laying stress on (Eo) and (P) factors. This feedback chart was effective to improve learners' acceptability of computerized test.

Stability property of an optically injection-locked semiconductor laser taking account of gain saturation is discussed. Numerical analysis shows that stable locking region is broadened due to gain saturation. This is because of rapid damping of relaxation oscillation due to gain saturation. It is also found that stable locking region is also broadened with increasing injection current since damping of relaxation oscillation becomes strong with increasing injection current. Numerical calculations of lasing spectrum show that the magnitude of sidepeaks appeared at harmonics of relaxation oscillation frequency under unstable locking condition are suppressed due to gain saturation.

The paper considers the design of two families of binary block codes developed for controlling large numbers of errors which may occur in LSI, optical disks and other devices. The semidistance codes are capable of assuring a required signal-to-noise ratio in information retrieval; the t-symmetric error correcting/all unidirectional error detecting" (t-SyEC/AUED) codes are capable of correcting t or fewer symmetric errors and also detecting any number of unidirectional errors caused by the asymmetric nature of transmission or storage madia. The paper establishes an equivalence between these families of codes, and proposes improved methods for constructing, for any values of t, a class of nonsystematic constant weight codes as well as a class of systematic codes. The constructed codes of both classes are shown to be optimal when t is O, and of asymptotically optimal order" in general cases. The number of redundant bits of the obtained nonsystematic code is of the order of (t+1/2)log2 K bits, where K is the amount of information encoded. The obtained systematic codes have redundancy of the order of (t+1)log2 K bits.

Actual debugging actions during the testing phase in the software development and the operation phase are not always performed perfectly. In other words, all detected software faults are not corrected and removed certainly. Generally, this is called imperfect debugging. In this paper, we discuss a software reliability growth model considering imperfect debugging that faults are not always corrected/removed when they are detected. Defining a random variable representing the cumulative number of faults corrected up to a specified testing time, this model is described by a semi-Markov process. We derive various quantitative measures for software reliability assessment and show their numercal examples.

We discuss fault tolerance of an information disseminating scheme, t-disseminate on a network with N processors, where each processor can send a message to t directions at each round. When N is a power of t+1 and at most tlogt+1N-1 (at most t) processors and/or edges have hailed, logt+1N+(f1)/t rounds (logt+1N+2 rounds) suffice for broadcasting information to all destinations from any source by t-disseminate. For a arbitrary N, logt+1N2f/t1 rounds (logt+1N+2 rounds) suffice for broadcasting information to all destinations from any source by t-disseminate if at most t(logt+1N1)/2 (at most t/2) processors and/or edges have failed.

The preparation of magnetic semiconductor thick film (MST) by means of spray printing and application to a temperature/gas/essence sensor have been proposed. The MST pattern is composed of ferrite, ruthenium compound, carbon black, binder and solvent. After the mixed mgnetic semiconductor fluid is sprayed on a substrate, the sample is sintered at 750. The MST with thickness of 40 µm is printed on the substrate in various shapes such as a plate, a ring or a rod. The magnetic property of MST depends on temperature, and the electrical property responds to gas and natural/artificial fruit essence. Therefore, the multipore ceramic MST operates as a gas sensor with high sensitivity and high stability.

This letter considers a subclass of t-symmetric error correcting/all unidirectional error detecting (t-SyEC/AUED) codes in which the information is represented in an m-out-of-k coded form, which thus can be regarded as virtually systematic for practical purposes. For t3, previous researchers proposed methods for constructing codes of this subclass which are either optimal or of asymptotically optimal order. This letter proposes a new method for constructing, for any values of t, m and k, codes that are either optimal or of asymptotically optimal order. The redundancy of the obtained code is of the order tlog2k bits when mt.

Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm-1 over wide wavelength range of 30 nm.

In this paper the three dimensional (3-D) effect on CMOS latch-up is modeled using a graphical technique based on the fundamental principle of "charge neutrality or its current continuity equivalent" in the base region of parasitic transistors involved in latch-up. The graphical generation of the complete latch-up I-V characteristic requires as an input the SPICE parameters of the relevant bipolar and MOS transistors, the values of shunt resistances and the reverse current-voltage characteristic of the well-substrate junction. The infiuence of the MOS transistor shunting the parasitic bipolar transistors has received special attention. The nonideal scaling of the parasitic resistances has been observed to be the most crucial parameter determining the 3-D nature of the device. The proposed model is validated with test-structures fabricated in 2 µm bulk CMOS technology at and above room temperature. SAFE space map is constructed with width W as a parameter.

As part of Hitachi's development of clean semiconductor processing equipment, the Fluids Modeling Group of the Mechanical Engineering Research Laboratory is developing a computer model, CONTAMINATE, for simulating contamination of wafers in chemical vapor deposition (CVD) systems. CONTAMINATE is based on a 2D implementation of the SIMPLER algorithm for simulating convection/diffusion transport processes. The new model includes modules for simulating fluid flow, heat transfer, chemical reactions, and gas-phase formation and deposition of clusters and particles. CONTAMINATE outputs property fields and estimates of various film quality indices. Using CONTAMINATE we simulated a SiH4: O2: N2 gas mixture at 300 K flowing over a wafer heated to 700 K. System pressures were varied from 1-100 torr and SiH4 pressures from 0.1 to 10 torr. Deposition characteristics are in qualitative agreement with actual systems and are summarized as follows: (1) No particles larger than 0.1µm deposited for any of the conditions tested. (2) Film damage occurred above 10 torr, but no damage occurred below 10 torr. (3) Increasing SiH4 pressure at constant system pressure eliminated particle deposition because particles grew large enought that thermophoresis blocked particle diffusion. (4) Conformal deposition of featured surfaces was achieved only at 1 torr. (5) Film thickness variation over the diameter of the wafer was 15% at 100 torr, 3% at 10 torr, and 1% at 1 torr.

The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmDp0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.

A method for sweeping frequency ranges of over 130GHz within a tuning range of 30nm, without mode hopping, has been realized. The optical frequency is swept with a fine translation-rotation grating drive which uses a new, simplified operation method and a thermally controlled semiconductor laser system.

Since Vendler classified aspect into four categories, state, achievement, activity, and accomplishment, much effort has been made to define the notion of aspect logically. It is commonly agreed that aspect represents the general temporal characteristics of events and states. However, there still remains a considerable amount of disagreement about its formal treatment. One of the major problems is that the aspect of a sentence shifts by certain types of sentence construction. For instance, adding time adverbials to a sentence modifies the original aspect, taking the progressive form of the verb changes the aspect, and so on. These phenomena are known as the aspect shifts. The other is the problem known as the imperfective paradox. The imperfective paradox is a problem of the truth definition of the progressives. The truth condition of the progressive form of the sentence is defined at an internal subinterval of the temporal range of the corresponding non-progressive sentence. If the truth condition of the progressive form of the sentence is defined using the truth condition of the non-progressive form of the sentence, there are logical contradictions of truth definition in a sentence such as "Max was building a house, but he never built it". These problems cause much confusion (1) in the truth definition of aspects, (2) in the definition of aspect operations, such as initiative, terminative, progressive, perfective, etc., and also (3) in the definition of adding time adverbials. This paper reviews the semantic problems with respect to aspect, and presents a consistent mechanism of aspect interpretation in order to settle all these semantic puzzles at once. For the sake of logical clarity, we construct a formal language, Lt, where every meaningful formula is a pair of a meaningful sentence and its aspect. The syntax of Lt describes the phenomenology of aspect shifts. The semantics of Lt defines temporal interpretation for all the meaningful sentences of Lt, with assuming the temporal interpretations of three inherent aspects, state, achievement, and activity. The proposed aspect interpretation gives a reasonable account for aspect shifts, and solves the imperfective paradox by asssuming the time structure to be backwards linear.