S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.

We proposed a new method for evaluating the deterioration of messenger wires by using terahertz waves. We use terahertz time-domain spectroscopy to measure several twisted wire samples with different levels of deterioration. We find that each twisted wire sample had a different distribution of reflection intensity which was due to the wires' twist structure. We show that it is possible to assess the degradation from the straight lines present in the reflection intensity distribution image. Furthermore, it was confirmed that our method can be applied to wire covered with resin.

We previously developed a new terahertz (THz) wave detection method that utilizes the effect of nonlinear optical (NLO) polymers. The new method provided us with a gapless detection, a wide detection bandwidth, and a simpler optical geometry in the THz wave detection. In this paper, polarization dependences in THz wave detection by the Stark effect were investigated. The projection model was employed to analyze the polarization dependences and the consistency with experiments was observed qualitatively, surely supporting the use of the first-order Stark effect in this method. The relations between THz wave detection by the Stark effect and Stark spectroscopy or electroabsorption spectroscopy are also discussed.

Hydrophobic DNA (H-DNA) nano-film was formed as the surface modifier on a thin glass plate working as a slab optical waveguide (SOWF). Cytochrom c (cytc) molecules were immobilized from aqueous solution with direct contacting to the H-DNA nano-film for 30 minutes. From SOWG absorption spectral changes during automated solution exchange (SE) processes, it was found that about 28.1% of cytc molecules was immobilized in the H-DNA nano-film with keeping their reduction functionality by reducing reagent.

The gap states of tetratetracontane (C44H90; TTC), which is a model oligomer of polyethylene, was examined by using high-sensitivity UV photoemission spectroscopy (HS-UPS). The high sensitivity enabled us to directly observe the weak gap states distributed in the HOMO-LUMO gap from the valence band top to 3.0 eV below the vacuum level. On the basis of the density-of-states derived from UPS results, the tribocharging nature of polyethylene was discussed in comparison with our previous result for nylon-6,6 film.

Hydrophobic DNA (H-DNA) nano-film was formed on a thin glass plate of 50μm thick working as a slab optical waveguide. Bromothymol blue (BTB) molecules were immobilized from aqueous solution with direct contacting to the H-DNA nano-film for 20 minutes. From changes in absorption spectra observed with slab optical wave guide (SOWG) during automated solution exchange (SE) processes for 100 times, it was found that about 95% of bromothymol blue (BTB) molecules was immobilized in the H-DNA nano-film with keeping their functionality of color change responsible to pH change in the solution.

We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.

Effects of electron beam irradiation at 15 keV on graphene are investigated by optical and electron characterization using Raman and two-terminal resistance measurement and photoconductivity measurement. In Raman spectra, increase of defects in D-peak to G-peak ratio by increase of electron irradiation by 70 mC/cm2 was found. Resistance of graphene showed an increase after the irradiation. Rather sensitive change was found in photoconductivity of irradiated graphene under ultra-violet (UV) illumination, suggesting irradiation induced defects affect a photoconductivity properties of the graphene.

This paper describes recent progress of photonically-enabled systems for millimeter-wave and terahertz measurement applications. After briefly explaining signal generation schemes as a foundation of photonics-based approach, system configurations for specific applications are discussed. Then, practical demonstrations are presented, which include frequency-domain spectroscopy, phase-sensitive measurement, electric-field measurement, and 2D/3D imaging.

This paper gives an outline of key technologies necessary for science-based agriculture. In order to design future agriculture, present agriculture should be redesigned based on the context of smart agriculture that indicates the overall form of agriculture including a social system while the present precision agriculture shows a technical form of agriculture only. Wireless Sensor Network (WSN) and the various type of optical sensors are assumed to be a basic technology of smart agriculture which intends the harmony with the economic development and sustainable agro-ecosystem. In this paper, the current state and development for the optical sensing for environment and plant are introduced.

Gallium oxide is expected as a channel material for thin film transistors. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100--450$^{circ}$C, although the room-temperature (RT) growth has not been developed. In this work, we developed the RT ALD of gallium oxide by using a remote plasma technique. We studied trimethylgallium (TMG) adsorption and its oxidization on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). Based on the adsorption and oxidization characteristics, we designed the room temperature ALD of Ga$_{2}$O$_{3}$. The IRAS indicated that TMG adsorbs on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface and regeneration of the adsorption sites for TMG. We successfully prepared Ga$_{2}$O$_{3}$ films on Si substrates at RT with a growth per cycle of 0.055,nm/cycle.

Nitrogen adsorption on thermally cleaned Si(100) surfaces by pure and plasma excited NH$_{3}$ is investigated by extit{in situ} IR absorption spectroscopy and ex-situ X-ray photoelectron spectroscopy with various temperatures from RT (25$^{circ}$C) to 800$^{circ}$C and with a treatment time of 5,min. The nitrogen coverage after the treatment varies according to the treatment temperature for both pure and plasma excited NH$_{3}$. In case of the pure NH$_{3}$, the nitrogen coverage is saturated as low as 0.13--0.25 mono layer (ML) while the growth of the nitride film commenced at 550$^{circ}$C. For the plasma excited NH$_{3}$, the saturation coverage was measured at 0.54,ML at RT and it remained unincreased from RT to 550$^{circ}$C. This indicates that the plasma excited NH$_{3}$ enhances the nitrogen adsorption near at RT. It is found that main species of N is Si$_{2}=$ NH in case of the plasma excited NH$_{3}$ at RT while the pure NH$_{3}$ treatment gives rise to the Si--NH$_{2}$ passivation with Si--H at RT. We discuss the mechanism of the nitrogen adsorption on Si(100) surfaces with the plasma excited NH$_{3}$ in comparison with the study on the pure NH$_{3}$ treatment.

A four-pixel-array superconducting transition-edge sensor (TES) microcalorimeter with a mushroom-shaped absorber was fabricated for the energy dispersive spectroscopy performed on a transmission electron microscope. The TES consists of a bilayer of Au/Ti with either a 50-nm or 120-nm thickness. The absorber of 5.0,$mu$m thick is made from a Au layer and its stem is deposited in the center of the TES surface. A Ta$_{2}$O$_{5}$ insulating layer of 100-nm thickness is inserted between the overhang region of the absorber and the TES surface. A selected pixel of the TES microcalorimeter was operated for the detection of Np L X-rays emitted from an $^{241}$Am source. A response of the TES microcalorimeter to L X-rays was obtained by analyzing detection signal pulses with using the optimal filter method. An energy resolution was obtained to be 33,eV of the full width at half maximum value at 17.751,keV of Np L$_{eta 1}$ considering its natural width of 13.4,eV. Response to L X-rays emitted from a mixture source of $^{238}$Pu, $^{239}$Pu and $^{241}$Am was obtained by operating the selected pixel of the TES microcalorimeter. Major L X-ray peaks of progeny elements of $alpha$ decay of Pu and Am isotopes were clearly identified in the obtained energy spectrum. The experimental results demonstrated the separation of $^{241}$Am and plutonium isotopes by L X-ray spectroscopy.

Since the birth of astrophysics, astronomers have been using free-space optics to analyze light falling on Earth. In the future however, thanks to the advances in photonics and nanoscience/nanotechnology, much of the manipulation of light might be carried out using not optics but confined waveguides, or circuits, on a chip. This new generation of instruments will be not only extremely compact, but also powerful in performance because the integration enables a greater degree of multiplexing. The benefit is especially profound for space- or air-borne observatories, where size, weight, and mechanical reliability are of top priority. Recently, several groups around the world are trying to integrate ultra-wideband (UWB), low-resolution spectrometers for millimeter-submillimeter waves onto microchips, using superconducting microelectronics. The scope of this Paper is to provide a general introduction and a review of the state-of-the-art of this rapidly advancing field.

Recently, a next-generation heterodyne mixer detector---a hot electron bolometer (HEB) mixer employing a superconducting microbridge---has gradually opened up terahertz-band astronomy. The surrounding state-of-the-art technologies including fabrication processes, 4 K cryostats, cryogenic low-noise amplifiers, local oscillator sources, micromachining techniques, and spectrometers, as well as the HEB mixers, have played a valuable role in the development of super-low-noise heterodyne spectroscopy systems for the terahertz band. The current developmental status of terahertz-band HEB mixer receivers and their applications for spectroscopy and astronomy with ground-based, airborne, and satellite telescopes are presented.

To immobilize cytochrome $c$ (cyt.,$c$) on ITO electrode with keeping its direct electron transfer (DET) activity, 10-carboxydecylphosphonic acid (10-CDPA) self-assembled monolayer (SAM) film was formed on ITO electrode. After 100 times washing process with exchanging phosphate buffer saline solution in the cell to fresh one, extit{in situ} slab optical waveguide (SOWG) absorption spectral measurement proved that about 80% of cyt.,$c$ immobilized on 10-CDPA modified ITO electrode was adsorbed on ITO electrode. Additionally SOWG spectral change of cyt.,$c$ between oxidized and reduced forms was observed with setting the ITO electrode potential at 0.3 and $-$0.3,V vs. Ag/AgCl, respectively showing DET reaction between cyt.,$c$ and ITO electrode occurred. About 30% of a monolayer coverage was estimated from the coulomb amount in the surface area of oxidation and reduction peaks on cyclic voltammetry (CV) data. CV peak current maintained 84% for ITO electrode modified with 10-CDPA SAM film after 60,min continuous scan with 0.1,V/sec from 0.3 and $-$0.3,V vs. Ag/AgCl.

We report a real time method to monitor the chemical reaction in microdroplets, which contain an organic dye, 5(6)-carboxynaphthofluorescein and a CdSe/ZnS quantum dot using fluorescence spectra. Especially, the relationship between the droplet size and the reaction rate of the two reagents was investigated by changing an injection speed.

An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using high-resolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and O3. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300 confirms the formation of TaGexOy and the suppression of the interfacial GeO2 layer growth. The energy band structure of HfO2/TaGexOy/Ge was determined by the combination of the energy bandgaps of HfO2 and TaGexOy measured from energy loss signals of O 1s photoelectrons and from optical absorption spectra and the valence band offsets at each interface measured from valence band spectra. From the capacitance-voltage (C-V) curves of Pt-gate MIS capacitors with different HfO2 thicknesses, the thickness reduction of TaGexOy with a relative dielectric constant of 9 is a key to obtain an equivalent SiO2 thickness (EOT) below 0.7 nm.

We have fabricated Pt/Si-rich oxide (SiOx)/TiN stacked MIM diodes and studied an impact of the structural asymmetry on their resistive switching characteristics. XPS analyses show that a TiON interfacial layer was formed during the SiOx deposition on TiN by RF-sputtering in an Ar + O2 gas mixture. After the fabrication of Pt top electrodes on the SiOx layer, and followed by an electro-forming process, distinct bi-polar type resistive switching was confirmed. For the resistive switching from high to low resistance states so called SET process, there is no need to set the current compliance. Considering higher dielectric constant of TiON than SiOx, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower RESET voltages and better switching endurance than the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies a good repeatable nature of Red-Ox reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt.