This paper briefly reviews recent studies on free-space photonic switches, and discusses classifications, applications and technical issues to be solved. The free-space photonic switch is a switch that uses light beam interconnections based on free-space optics instead of guided-wave optics. A feature of the free-space switch is its high-density three-dimensional structure that enables compact large-scale switches to be created. In this paper, the free-space switches are classified by their various attributes such as logical network configuration, path-establishment method, number of physical stages, signal-waveform transmission form, interconnection optics and so on. The logical network configuration (topological geometry or topology) is strongly related to the advantages of the free-space switches over the guided-wave switches. The path-establishment method (path-shifting/branching-and-gating) and the number of physical stages (single-stage/multistage) are related to physical switching characteristics. Signal-waveform transmission form (analog/digital) is related to switch application. Interconnection optics (imaging system/micro-beam system) is related to the density and volume of the switching fabric. Examples of the free-space switches (single-stage, analog multistage, digital multistage and photonic ATM switches) are described. Possible applications for analog switches are subscriber-line concentrators, inter-module connectors, and switching networks for parallel or distributed computer systems. Those for digital switches include multistage space-division switches in time-division circuit-switching or packet switching systems (including asynchronous transfer mode [ATM] switching system) for both communications switching systems and parallel/distributed computer systems. Technical issues of the free-space switches (system, device, assembly technique) must be solved before creating practical systems. In particular, the assembly technique is a key issue of the free-space switches.

From the viewpoint of customer's satisfaction, precise information and rapid action are very important when complaints about call connection failures or service quality deterioration come from customers. It is indispensable to the propose that operators are supported by an operation system which stores and processes each customer's information, their complaint's histories, network failure status and call connection detail data. This paper shows functions and Human Machine Interface (HMI) of Customer Complaint Handling System (CCHS). This system can handle a customer's complaint by an electric ticket and necessary information is automatically collected and shown on the ticket.

A power converter with a new piezoelectric transformer is presented. The piezoelectric transformer, made of lead titanate solid solution ceramic, is operated with a thickness extensional vibration mode. This transformer can operate at high frequency, over several megahertz, with about 90% high efficiency. The resonant frequency for the transformer is 2 MHz. The power converter with the transformer applies the theory for a class-E switching converter using an electromagnetic transformer. Maximum output power was obtained when the switching frequency was slightly higher than the resonant frequency. 4.4 W output power was successfully obtained with 52% efficiency at 2.1 MHz switching frequency.

OTA (Operational Transconductance Amplifier) is a useful circuit in analog signal processing systems, especially in high-frequency applications. Important features of OTA are: infinite input impedance, electrically changeable transconductance (Gm), and much wider operation range without negative feedback such as in OPamp applications. The good linearity of OTA over wide input range is necessary to extend the application fields of OTA. Several techniques are developed to extend the input range with good linearity. In this paper, a highly-linear CMOS-OTA operating under 1 V power supply, is proposed. The concept of the proposed OTA is based on class-AB operation of two n-channel MOSFETs in the saturation region. By improving the input stage circuits, wide input range can be achieved. SPICE simulations are performed to verify the performance of the proposed OTA.

Tunneling generation becomes increasingly important in modern devices both as a source of leakage and for special applications. Mostly, the observed phenomena are attributed to band-to-band tunneling, although from early investigations of Esaki diodes it is well known that at lower field strengths trap-assisted tunneling is responsible for non-ideal IV-characteristics. In this paper we apply microscopic models of trap-assisted and band-to-band tunneling, which were derived from first-principle quantum-mechanical calculations, in a general multi-device simulator. Special simplified versions of the models were developed for the purpose of fast numerical computations. We investigate pn-junctions with different doping profiles to reveal the relative contribution of the two tunneling mechanisms. Simulated currents as function of voltage and temperature are presented for each individual process varying the basic physical parameters. It turns out that the slope of reverse IV-characteristics dominated by trap-assisted tunneling is similar to those which are determined by band-to-band tunneling, if the localized state of the recombination center is only weakly coupled to the lattice. In the model such a slope is produced by field-enhancement factors of the Shockley-Read-Hall lifetimes expressing the probability of tunneling into (or out of) excited states of the electron-phonon system. The temperature dependence of these field-enhancement factors compensates to a certain extent the expected strong temperature effect of the Shockley-Read-Hall process. The latter remains larger than the temperature variation of phonon-assisted band-to-band tunneling, but not as much as often stated. Consequently, the slope of the IV-characteristics and their temperature dependence are not the strong criteria to distinguish between trap-assisted and band-to-band tunneling. The origin of tunnel currents in silicon rather depends on the sum of physical conditions: junction gradient, nature and concentration of defects, temperature and voltage range.

A photonic inter-module connector for near-future electronic switching systems is demonstrated through the use of silica-based 88 optical switches. A small-scale switch matrix is sufficient because the near-future systems will consist of a limited number of modules. If an active module is affected by a fatal fault or accident, a stand-by module must quickly take its place. The experimental photonic inter-module connector can switch 156-Mbit/s photonic interconnections between seven subscriber-line-concentrator modules and eight circuit-switching modules.

This paper describes an implementation of the finite element method to examine the effects of actual lip shape on the sound radiation. A three-dimensional finite element approach by Galerkin method was used. The accuracy of the calculation of finite element method for the sound radiation was tested by comparing it with the exact solutions for a circular piston radiator on an infinite baffle. Using a set of finite element models of the vocal tract, we calculated the responses to a pure tone input and the sound fields over the frequency range of 100 Hz-7 kHz. The transfer functions are examined in detail for vowels /a/ and /i/ when the shape of the actual lips is simplified as a planeradiation surface. The effects of lip shape on the distribution of sound pressures are also shown in both the vocal tract and the surrounding space of the mouth opening.

Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamic, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamic and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.

Material representations and algorithms are presented for simulation of nanometer lithography. Organic polymer resists are modeled as collections of overlapping spheres, with each sphere representing a polymer chain. Exposure and post-exposure bake steps are modeled at the nanometer scale for both positive and negative resists. The development algorithm is based on the Poisson removal probability for each sphere in contact with developer. The Poisson removal rate for a given sphere is derived from a mass balance relationship with a macroscopic development rate model. Simulations of electron beam lithography with (poly) methyl methacrylate and Shipley SAL-601 reveal edge roughness standard deviations from 2 to 3 nm, leading to linewidth peak-to-peak 3σ variation of 15 to 22 nm. Typical simulations require about 2 MBytes and under 5 minutes on a Sun Sparc 10/41 engineering workstation.

Novel circuit design techniques for CMOSFET (complementary MOS field-effet transistor)-only bias circuits, which each include a current mirror with a peaking characteristic, a current reference with a positive temperature coefficient, and a voltage reference with an optional temperature dependence, are described. An MOS Nagata current mirror is analyzed, and bias circuits like a CMOS self-biasing Nagata current reference and a CMOS self-biasing Nagata voltage reference, both of which include an MOS Nagata current mirror, are discussed. In addition, a CMOS temperature coefficient shifter, used to add an offset voltage and an optional temperature coefficient to a reference voltage, is also discussed. The CMOS Nagata voltage reference was verified with a breadboard using discrete componente and a 0.15 mV/ temperature dependence.

An eye-contact technique using a blazed half-transparent mirror (BHM) is developed. This half-transparent mirror (HM) consists of an in-line array of many slanting micro-HMs. We fabricated a prototype system and confirmed the principle of this technique. The resolution of an image reflected by a BHM was simulated to determine how to improve the image quality and the factors degrading the resolution were clarified.

To realize a high performance optical subscriber network a route reconnect switch is desired which has bistability, polarization and wavelength independence and compactness. This paper proposes an electrocapillarity optical (ECO) switch, in which a micro-mirror formed by a mercury droplet is driven by electrocapillarity. This switch has a potential for use in bistable waveguide matrix switches, which are suitable for route reconnection in the optical subscriber network. A theoretical model is presented that the driving force of the electrocapillarity originates in an electrically induced gradient in the surface tension of the mercury-electrolyte interface where an electrical double layer is formed. The experimentally obtained relation between the flow velocity of a mercury droplet and the electric current in an electrocapillary system is well described by this model. A prototype of the ECO switch is made using a resin molded single-mode fiber with a slit sawed in it in which a electrocapillary system is made. Optical switching is demonstrated and possible improvements in switching performance are discussed.

For IF direct sampling phase detection method (IFSM) which realizes the arithmetical operations with digital filters by direct A/D (Analog to Digital) conversion of IF (Intermediate Frequency) signal, the method to eliminate DC offset is proposed and developed by using the gate array. A principle of the proposed method and the results of the measurement are shown.

A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.

The power transfer characteristics of a symmetric nonlinear directional coupler (NLDC) are analyzed rigorously using the beam propagation method based on the finite difference scheme. The NLDC consists of two linear waveguides separated by a Kerr-like nonlinear gap layer. The change of nonlinear refractive index along the coupler is precisely evaluated by making use of the second-order iteration procedure with respect to a small propagation length. For the incidence of TE0 mode of the isolated linear waveguide, the highly accurate numerical results are obtained for the behavior of power transfer, and the coupling length and critical power for optical switching. The dependencies of the coupling length and critical power on the width of the gap layer and the input power levels are discussed, compared with those predicted by the coupled-mode approximations.

It is recognized in Japan that reformation of the national research institutions is urgently necessary. Present situation and constraints are shown and the action items are discussed.

Via electromigration (EM) performance of aluminum based metallization (AL) systems has been investigated for vias chains of 1500-4000 vias of 1.0 micron diameter. The results show that via EM lifetime can not be enhanced by a simple increase of M2 step coverage in AL/AL vias because the EM induced voids are formed at AL/AL via interface where electrons flow from Ml to M2 even in the case of very poor M2 step coverage. The voids are induced by the boundary layer in AL/AL vias, where a temperature gradient causes discontinuity of aluminum atoms flux. The failure location is not moved though via EM lifetime can be improved by controlling stress in passivation, sputter etch removal thickness and grain size of the first metal. Next, the effect of the boundary layer are eliminated by depositing titanium under the second aluminum or depositing WSi on the first aluminum. In the both cases, via EM lifetime are improved and the failure locations are changed. Especially WSi layer suppresses the voids formation rather than titanium. Models for the failure mechanism in each metallization system are further discussed.

This paper describes the use of optical interconnections in switching systems and discusses our recent achievements in this area. Switching system interconnections are classified based on their application layers. The evolution of optical interconnections in switching systems in discussed in terms of such system requirements as cost, size, and throughput. Recent achievements are discussed: an optical inter-module connector, a free-space digital switch, and a large-capacity optically intra-connected ATM switch.

We propose an optical computing architecture called pure optical parall array logic system (P-OPALS) as an instance of sophisticated optical computing system. On the P-OPALS, high density images can be processed in parallel using the optical system with high resolving power. We point out problems on the way to develop the P-OPALS and propose logical foundation of the P-OPALS called single-input optical array logic (S-OAL) as a solution of those problems. Based on the proposed architecture, an experimental system of the P-OPALS is constructed by using three optical techniques: birefringent encoding, selectable discrete correlator, and birefringent decoding. To show processing capability of the P-OPALS, some basic parallel operations are demonstrated. The results obtained indicate that image consisting of 300 100 pixels can be processed in parallel on the experimental P-OPALS. Finally, we estimate potential capability of the P-OPALS.

The well-known closure tests, the cycling closure test (CCT) and the meet-in-the-middle closure test (MCT), were introduced by Kaliski, Rivest and Sherman to analyze the algebraic properties of cryptosystems, and CCT indicates that DES is not closed. Though Coppersmith presented that DES can be proved not to be closed by a particular way, the closure tests can check various kinds of cryptosystems generally. Thus, successors to MCT and CCT have been proposed at CRYPTO. This paper expands the MCT successor, the switching closure test (SCT), to apply to the DES-like cryptosystems, and shows that this SCT variant is more efficient than the closure test proposed at CRYPTO'92, because the SCT variant establishes a better relationship between the computation cost and the probability of error (the evaluation index). The MCT successors are more important than the CCTs, because the MCTs can directly break closed cryptosystemes. Therefore, if you want to detect the closure property of cryptosystems generally, the SCT variant is better.