In this paper, we study partial key exposure attacks on RSA where the number of unexposed blocks of the private key is greater than or equal to one. This situation, called generalized framework of partial key exposure attack, was first shown by Sarkar [22] in 2011. Under a certain condition for the values of exposed bits, we present a new attack which needs fewer exposed bits and thus improves the result in [22]. Our work is a generalization of [28], and the approach is based on Coppersmith's method and the technique of unravelled linearization.

In 1999, Boneh and Durfee introduced the small inverse problem, which solves the bivariate modular equation x(N+y)≡1(mod e. Absolute values of solutions for x and y are bounded above by X=Nδ and Y=Nβ, respectively. They solved the problem for β=1/2 in the context of small secret exponent attacks on RSA and proposed a polynomial time algorithm that works when δ<(7-2√7)/6≈0.284. In the same work, the bound was further improved to δ<1-1/≈2≈0.292. Thus far, the small inverse problem has also been analyzed for an arbitrary β. Generalizations of Boneh and Durfee's lattices to obtain the stronger bound yielded the bound δ<1-≈β. However, the algorithm works only when β≥1/4. When 0<β<1/4, there have been several works where the authors claimed their results are the best. In this paper, we revisit the problem for an arbitrary β. At first, we summarize the previous results for 0<β<1/4. We reveal that there are some results that are not valid and show that Weger's algorithms provide the best bounds. Next, we propose an improved algorithm to solve the problem for 0<β<1/4. Our algorithm works when δ<1-2(≈β(3+4β)-β)/3. Our algorithm construction is based on the combinations of Boneh and Durfee's two forms of lattices and it is more natural compared with previous works. For the cryptographic application, we introduce small secret exponent attacks on Multi-Prime RSA with small prime differences.

In this paper, we investigate the security property of RSA when some middle bits of the private key d are known to an attacker. Using the technique of unravelled linearization, we present a new attack on RSA with known middle bits, which improves a previous result under certain circumstance. Our approach is based on Coppersmith's method for finding small roots of modular polynomial equations.

High voltage DC contactors, for operation at voltage levels up to at least about 300,volts, find their increasing markets in applications such as electrical vehicles and aircrafts in which size and weight of cables are of extreme importance. The copper bridge-type contact, cooperated with magnetic field provided by permanent magnets and sealed in an arc chamber filled with high pressure gases, is a mainly used structure to interrupt the DC arc rapidly. Arc characteristic in different gases at different pressure varies greatly. This paper is focused on the arc characteristics of the bridge-type contact system when magnetic field is applied with nitrogen and gas at different pressure. The pressure of the gases varies from 1,atm to 2.5,atm. Arc characteristics, such as arc durations at different stages and arc motions in those gases are comparatively studied. The results are instructive for choosing the suitable arcing atmosphere in a DC bridge-type arc chamber of a contactor.

At CaLC 2001, Howgrave-Graham proposed the polynomial time algorithm for solving univariate linear equations modulo an unknown divisor of a known composite integer, the so-called partially approximate common divisor problem. So far, two forms of multivariate generalizations of the problem have been considered in the context of cryptanalysis. The first is simultaneous modular univariate linear equations, whose polynomial time algorithm was proposed at ANTS 2012 by Cohn and Heninger. The second is modular multivariate linear equations, whose polynomial time algorithm was proposed at Asiacrypt 2008 by Herrmann and May. Both algorithms cover Howgrave-Graham's algorithm for univariate cases. On the other hand, both multivariate problems also become identical to Howgrave-Graham's problem in the asymptotic cases of root bounds. However, former algorithms do not cover Howgrave-Graham's algorithm in such cases. In this paper, we introduce the strategy for natural algorithm constructions that take into account the sizes of the root bounds. We work out the selection of polynomials in constructing lattices. Our algorithms are superior to all known attacks that solve the multivariate equations and can generalize to the case of arbitrary number of variables. Our algorithms achieve better cryptanalytic bounds for some applications that relate to RSA cryptosystems.

Recently, wireless power transfer has attracted much attention for power supplying on not only small electric devices but also large equipments such as electric and hybrid vehicles. Coils are important components in such power transfer systems and their AC resistance is a key factor to determine the transferring efficiency. The AC resistance of wires used in the coils is required to be as lower as possible for high efficiency systems. Copper clad aluminum (CCA) wire which has an aluminum (Al) core surrounded by a thin copper (Cu) layer has been proposed for this purpose. CCA wires are not only light-weight and easy for soldering but also show lower AC resistance than commonly used Cu wires on certain conditions. In this paper, the AC resistance caused by the skin and proximity effects of a CCA wire with circular cross-section is numerically analyzed. The condition that CCA wires are superior to Cu wires in view of AC resistance is discussed. Simulated results are compared with experiments on fabricated coils and good agreement is obtained. It is actually verified that coils wound by CCA wires have lower AC resistance than those by Cu wires under some circumstances, especially at high frequencies.

Bridge-type contacts are mainly used in high voltage direct current contactors for their performance of arc extinguishment and break capacity. It is also easy to add external magnetic field in them to blow the arc. Experiments on the arc behaviors were carried out when a copper bridge-type contact pair opening a 270V resistive circuit in the air. Influences of the shape of the movable contact, the opening speed and the magnetic flux density on the key behaviors, such as the arc duration, the arc re-ignition and the stability of arcing process, were investigated by using an oscilloscope and a high-speed camera. It was revealed that a uniform magnetic field with proper density could extinguish the arc stably and could reduce the arc re-ignition.

The copper nitride surface characteristics according to atmospheric pressure plasma (APP) and excimer ultraviolet (EUV) treatment were compared using XPS and AFM. As the result of XPS analysis result, in C1s, the organic material removal effect was greater for EUV treatment than for APP, and the oxygen content was found to be low. In Cu (933 eV) area, the shoulder peak of Cu compound was detected, and the reduction was greater for EUV processing than for APP. In the AFM phase image which could be analyzed using the superficial viscoelasticity, the same trend was observed. On the copper nitride surface, the weak boundary O layer is formed according to the clean processing, and such phenomenon was interpreted as a factor for lowering the affinity with polymer.

In order to realize millimeter-wave (MMW) 3-D system-in-package (SiP) front-end modules, we propose a 60-GHz band copper ball vertical interconnection structure, which interconnects between vertically stacked substrates. The structure enables ICs to be placed between the vertically stacked substrates. Since the diameter of the copper balls must exceed the thickness of the ICs, the distance between the substrates in the modules is larger than that of the flip-chip interconnection widely used in the MMW-band. Therefore, the conventional flip-chip interconnection does not scale for the interconnection between the substrates in MMW 3-D SiP front-end modules. The layout of grounded copper balls and the patterns of inner ground layers in the upper/lower substrates are designed using 3-D electromagnetic field simulation. The designed structure allows less than 1 dB transmission loss up to 71.1 GHz, compared with a through transmission line. The result is verified with fabrication and measurement and confirms the feasibility of MMW 3-D SiP front-end modules.

Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.

Broadband access network planning strategies with techno-economic calculations are important topics, when optimal broadband network deployments are considered. This paper analyzes optimal deployment combination of digital subscriber line technologies (xDSL) and fiber to the home technologies (FTTx), following different user bandwidth demand scenarios. For this reason, optimal placement of remote digital subscriber line multiplexer (RDSLAM) is examined. Furthermore, the article also discusses the economy of investments, depending on certain investment threshold and the reach of different xDSL technologies. Finally, the difference between broadband network deployment in a characteristic urban and rural area in Republic of Slovenia, in terms of required optical cable dig length per household is shown. A tree structure network model of a traditional copper access network is introduced. A dynamic programming logic, with recursion as a basis of a tree structure examination and evaluation of optimal network elements placement is used. The tree structure network model considers several real network parameters (e.g.: copper cable lengths, user coordinates, node coordinates). The main input for the optimization is a local loop distance between each user and a candidate node for RDSLAM placement. Modelling of copper access networks with a tree structure makes new extensions in planning optimization of broadband access networks. Optimization of network elements placement has direct influence on efficiency and profitability of broadband access telecommunication networks.

In this paper we propose an algorithm of factoring any integer N which has k different prime factors with the same bit-length, when about ()log2 N high-order bits of each prime factor are given. For a fixed ε, the running time of our algorithm is heuristic polynomial in (log2 N). Our factoring algorithm is based on a lattice-based algorithm of solving any k-variate polynomial equation over Z, which might be an independent interest.

In 1995, Vanstone and Zuccherato proposed a novel method of generating RSA moduli having a predetermined set of bits which are the ASCII representation of user's identification information (i.e., name, email address, etc.). This could lead to a savings in bandwidth for data transmission and storage. In this paper, we apply this idea of Vanstone and Zuccherato for reducing the storage requirement of RSA public moduli to integer factoring based public-key schemes with their moduli of the form prq. More precisely, we explicitly propose two efficient methods for specifying high-order bits of prime factors of their public-keys. We also consider the security of the proposed methods.

Contact surfaces are exposed to the atmosphere in general applications. Therefore, gases in the atmosphere such as oxygen and H2O are adsorbed on and react with the contact surface. Products formed on the surface such as copper oxide films degrade contact resistance characteristics. This surface contamination is an important problem for electrical contact applications. The author has studied the effect of humidification on contact resistance characteristics. In this paper, the effect of humidity on the growth of an oxide film on a copper surface was clarified. An increase in the humidity results in a decrease in the thickness, in contrast, a decrease in the humidity increases the thickness linearly. Changes in the oxide film thickness based on the level of humidity were measured by ellipsometry. Surface state changes influenced by humidification were analyzed topographically using a scanning tunneling microscope. The mechanism of the effect of humidity on the film thickness was discussed on the basis of the deduction of the copper oxide film by H2 from the adsorbed H2O. Moreover, the changes in contact resistance levels for both static and sliding contacts due to humidity were measured, and a dependence on humidity was found.

A novel interconnect design concept named "ASIS (Appilication-specific Interconnect Structure)" is presented for 45 nm CMOS performance maximization. Basic scheme of ASIS is that corresponding to applications, such as high-performance, low-power, or high reliability, interconnect structure as well as metal thickness is individually optimized in order to maximize chip-level performance matched to the application. Our investigation shows that for low-power application, the increased resistivity of scaled-down Cu-wire is not a main issue, so that thinner wire is more advantageous. For high-performance application, partially double pitch structure for local and intermediate layers is advantageous. For high-reliability requirement, Cu-Al alloy or CoWP cap-metal is quite effective for boosting reliability.

A novel wiring design concept called "Triple Damascene" is presented. We propose a new technology to mix wirings with different thickness in one layer by using dual damascene process without increasing mask steps. In this technology, three types of grooves are opened simultaneously. Deep trenches for thick wires, as well as vias and shallow trenches, are selectively opened. By the design concept using this technology, a 30% reduction in wiring delay is obtained for critical path. A 5% reduction in chip size is also obtained as the effect of decrease in repeater number for a typical high-performance multi-processing unit (MPU) in 0.13 µm generation. An example for performance enhancement in an actual product of graphic MPU chip is also demonstrated.

In RSA public-key cryptosystem, a small private key is often preferred for efficiency but such a small key could degrade security. Thus the Chinese Remainder Theorem (CRT) is tactically used, especially in time-critical applications like smart cards. As for using the CRT in RSA, care must be taken to resist partial key exposure attacks. While it is common to choose two distinct primes with similar size in RSA, May has shown that a composite modulus N can be factored in the balanced RSA with the CRT of half of the least (or most) significant bits of a private key is revealed with a small public key. However, in the case that efficiency is more critical than security, such as smart cards, unbalanced primes might be chosen. Thus, we are interested in partial key exposure attacks to the unbalanced RSA with the CRT. In this paper, we obtain the similar results as the balanced RSA. We show that in the unbalanced RSA if the N1/4 least (or most) significant bits are revealed, a private key can be recovered in polynomial time under a small public key.

In this paper, the distributions of two spectral intensities along the axis of an arc column of the breaking arc are measured by using a combination of a CCD color camera and an additional filter, and arc temperature and metal-vapor quantity are calculated, when copper electrodes interrupt circuits of dc 50 V/3.3 A and 5.0 A. As results; The spectral intensities of excited copper atoms are the strongest near the cathode and become weaker with distance from the cathode in the small number of breaking arcs. The spectral intensities become strong near the anode in the large number of breaking arcs. The average arc temperature in the cross-section of an arc column is high near both the cathode and the anode, and the temperature distribution in the cross-section of the arc column is high at the axis of the arc column, and the arc temperature along the axis of the arc column is high near both the cathode and the anode. The metal-vapor quantity is low near both the cathode and the anode, and it is much at the center of the arc column.

We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.

The growth behavior of copper particle on crystalline and amorphous silicon surfaces has been investigated. The study reveals that the growth behavior of copper particle depends on the substrate condition. When samples are intentionally contaminated in ultrapure water, both crystalline and amorphous silicon surfaces show no difference in their contamination levels. However, copper particles were not observed on an amorphous silicon surface except dipping in dilute CuCl2 solution. The copper concentration on an amorphous silicon surface after dipping in a 0.5% HF solution is similar to the level after contaminating in ultrapure water. The copper contamination level on a crystalline silicon surface, except from CuCl2 solution, decreased two orders of magnitude as compared with ultrapure water. The copper impurity level on crystalline silicon surface was reduced by two orders by cleaning in a sulfuric acid-hydrogen peroxide mixture. The sulfuric acid-hydrogen peroxide mixture cleaning was not effective on an amorphous silicon surface. When native oxide pre-existed on an amorphous silicon surface before contamination, however, the sulfuric acid-hydrogen peroxide mixture cleaning was effective for removing copper impurity. Our results suggest that copper contamination on an amorphous silicon surface have the characteristics of bonding directly with silicon and/or existing in the native oxide, in contrast with the situation on crystalline silicon surface. After contamination with 1000 ppm copper in CuF2 solution, the etch rate of an amorphous silicon film in a 0.5% HF solution was approximately one order of magnitude faster than that of crystalline silicon. This is attributed to the difference in crystalline structure between crystalline silicon and amorphous silicon.