Gate delay evaluation is always a vital concern for high-performance digital VLSI designs. As the feature size of VLSIs decreases to the nano-meter region, the work to obtain an accurate gate delay value becomes more difficult and time consuming than ever. The conventional methods usually use iterative algorithms to ensure the accuracy of the effective capacitance Ceff, which is usually used to compute the gate delay with interconnect loads and to capture the output signal shape of the real gate response. Accordingly, the efficiency is sacrificed. In this paper, an accurate and efficient approach is proposed for gate delay estimation. With the linear relationship of gate output time points and Ceff, a polynomial approximation is used to make the nonlinear effective capacitance equation be solved without iterative method. Compared to the conventional methods, the proposed method improves the efficiency of gate delay calculation. Meanwhile, experimental results show that the proposed method is in good agreement with SPICE results and the average error is 2.8%.

In deep submicron designs, predicting gate delays with interconnect load is a noteworthy work for Static Timing Analysis (STA). The effective capacitance Ceff concept and the Thevenin model that replaces the gate with a linear resistor and a voltage source are usually used to calculate the delay of gate with interconnect load. In conventional methods, it is not considered that the charges transferred into interconnect load and Ceff in the Thevenin model are not equal. The charge difference between interconnect load and Ceff has the large influence to the accuracy of computing Ceff. In this paper, an advanced effective capacitance model is proposed to consider the above problem in the Thevenin model, where the influence of the charge difference is modeled as one part of the effective capacitance to compute the gate delay. Experimental results show a significant improvement in accuracy when the charge difference between interconnect load and Ceff is considered.

In deep submicron designs, predicting gate slews and delays for interconnect loads is vitally important for Static Timing Analysis (STA). The effective capacitance Ceff concept is usually used to calculate the gate delay of interconnect loads. Many Ceff algorithms have been proposed to compute gate delay of interconnect loads. However, less work has been done to develop a Ceff algorithm which can accurately predict gate slew. In this paper, we propose a novel method for calculating the Ceff of interconnect load for gate slew. We firstly establish a new expression for Ceff in 0.8Vdd point. Then the Integration Approximation method is used to calculate the value of Ceff in 0.8Vdd point. In this method, the integration of a complicated nonlinear gate output is approximated with that of a piecewise linear waveform. Based on the value of Ceff in 0.8Vdd point, Ceff of interconnect load for gate slew is obtained. The simulation results demonstrate a significant improvement in accuracy.

In deep submicron designs, the interconnect wires play a major role in the timing behavior of logic gates. The effective capacitance Ceff concept is usually used to calculate the delay of gate with interconnect loads. In this paper, we present a new method of Integration Approximation to calculate Ceff. In this new method, the complicated nonlinear gate output is assumed as a piecewise linear (PWL) waveform. A new model is then derived to compute the value of Ceff. The introduction of Integration Approximation results in Ceff being insensitive to output waveform shape. Therefore, the new method can be applied to various output waveforms of CMOS gates with RC-π loads. Experimental results show a significant improvement in accuracy.

The scaled down feature size and the increased frequency of today's deep sub-micron region call for fundamental changes in driver-load models. To be more specific, new driver-load models need to take into consideration the nonlinear behavior of the drivers, the inductance effects of the loads, and the slew rates of the output waveforms. Current driver-load models use the conventional single Ceff (one-ramp) approach and treat the interconnect load as lumped RC networks. Neither the nonlinear property nor the inductance effects were considered. The accuracy of these existing models is therefore questionable. This paper introduces a new multi-ramp driver model that represents the interconnect load as a distributed RLC network. The employed two effective capacitance values capture the nonlinear behavior of the driver. The lossy transmission line approach accounts for the impact of inductance when modeling the driving point interconnect load. The new model shows improvements of 9% in the average delay error and 2.2% in the slew rate error compared to SPICE.

An accurate, fast delay calculation method suitable for high-performance, low-power LSI design is proposed. The delay calculation is composed of two steps: (1) the gate delay is calculated by using an effective capacitance obtained from a simple model we propose; and (2) the interconnect delay is also calculated from the effective capacitance and modified by using the gate-output transition time. The proposed delay calculation halves the error of a conventional rough calculation, achieving a computational error within 10% per gate stage. The mathematical models are simple enough that the method is suitable for quick delay calculation and logic circuit optimization in the early stages of LSI design. A delay optimization tool using this delay calculation method reduced the worst path delay of a multiply-add module by 11.2% and decreased the sizes of 58.1% of the gates.