Noise characteristics of GaAs metal-semiconductor field effect transistors (GaAs-MESFETs) with scaled-down dimensions are analyzed and modeled using a physics-based circuit simulator employing the Monte Carlo (MC) particle technique. The microscopic dynamics of electrons is also analyzed to investigate the mechanism of noise generation in a channel. Noise spectral densities of GaAs-MESFETs with two different geometries are estimated by evaluating fluctuations in instantaneous terminal currents. Then, minimum noise figures, F min, and noise figure circles are estimated using the noise spectral densities and Y-parameters. Because of an increase in y21 and suppression of an increase of noise spectral density, the device with an n+-region extending to below the drain-side edge of the gate contact exhibits a smaller noise figure. Suppression of the electron velocity fluctuation caused by electron transitions to higher valleys in a high electric field region is responsible for the noise suppression.

We introduce a method, so called FC method, for maintaining software resources, such as source codes and design documents, in consumer electronics products. Because a consumer electronics product is frequently and rapidly revised, software components in such product are also revised in the same way. However, it is not so easy for software engineers to follow the revision of the product because requirements changes for the product, including the changes of its functionalities and its hardware components, are largely independent of the structure of current software resources. FC method lets software engineers to restructure software resources, especially design documents, stepwise so as to follow the requirements changes for the product easily. We report an application of this method in our company to validate it. From the application, we can confirm that the quality of software was improved about in twice, and that efficiency of development process was also improved over four times.

We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB2 toward superconducting electronics. The most serious problem in the thin film synthesis of MgB2 is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB2 in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB2 films with Tc 35 K. Furthermore, technology to produce single-crystal epitaxial MgB2 films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB2 has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.

Electronic voting is a prime application of cryptographic tools. Many researches are addressing election or confidence voting in this area. We address a new type of voting scheme "Divisible Voting Scheme," in which each voter has multiple ballots where the number of ballots can be different among the voters. This type of voting is popular. We first define the divisible voting scheme and show naive protocols based on existing voting schemes. Then we propose two efficient divisible voting schemes. The first scheme uses multisets, the second scheme uses L-adic representation of the number of ballots. The total cost for a voter is O(M 2 log (N)) in the first scheme and O(M log (N)) in the second scheme where M is the number of candidates to vote for and N is the number of ballots for a voter.

Electron emission from PVDF (polyvinylidene-fluoride) ferroelectric substance (thickness: 40 µm) by polarization inversion was realized experimentally with using about 1nm thick C-Au-S semiconductive layer on the surface of a tooth-type electrode. After polarization of the PVDF, a negative impulse voltage (-2400 V with 1-10 ns of wave front and 10-100 ms of wave tail) with a voltage higher than a coercive voltage was applied to the flat-type electrode on the reverse side of the PVDF surface in a vacuum. Then the emitted electrons were detected with using a probe in front of the tooth-type electrode. The detected charge was 6.110-12C.

Next generation advanced power devices show remarkable progress in wide band-gap power devices such as silicon carbide and gallium nitride devices, as well as novel silicon devices called as super junction FETs and so on. The future direction of power electronics applications is surveyed in terms of output power density as an index of future power electronics development, instead of the power conversion efficiency, taking the device progress in sight. Over the last 30 years, the output power density of power electronics apparatuses has increased by a factor of two figures. New markets, such as a power supply for future generation CPU, a compact unit inverter and a electric vehicle-driving inverter unit, are expected to grow rapidly from 2010 to 2015 with the advance in the out power density of power converter. The possibility of power electronics innovation with progress in the output power density will be discussed in conjunction with development of next generation advanced power devices and related technologies.

This paper introduces a methodology for simulating single-electron-transistor (SET)-based multiple-valued logics (MVLs). First, a physics-based analytical model for SET is described, and then a procedure for extracting parameters from measured characteristics is explained. After that, simulated and experimental results for basic MVL circuits are compared. As an advanced example of SET-based logics, a latched parallel counter, which is one of the most important components in arithmetic circuits, is newly designed and analyzed by a simulation. It is found that a SET-based 7-3 counter can be constructed with less than 1/10 the number of devices needed for a conventional circuit and can operate at a moderate speed with 1/100 the conventional power consumption.

An experimental model of a redox microarray, which provides a foundation for constructing future massively parallel molecular computers, is proposed. The operation of a redox microarray is confirmed, using an experimental setup based on an array of microelectrodes with analog integrated circuits.

This paper presents a model-based study of SET (Single-Electron-Transistor) logic gate family for synthesizing binary, MV (Multiple-Valued) and mixed-mode logic circuits. The use of SETs combined with MOS transistors allows compact realization of basic logic functions that exhibit periodic transfer characteristics. The operation of basic SET logic gates is successfully confirmed through SPICE circuit simulation based on the physical device model of SETs. The proposed SET logic gates are useful for implementing binary logic circuits, MV logic circuits and binary-MV mixed-mode logic circuits in a highly flexible manner. As an example, this paper describes design of various parallel counters for carry-propagation-free arithmetic, where MV signals are effectively used to achieve higher functionality with lower hardware complexity.

A multifunctional Boolean logic circuit composed of single-electron transistors (SETs) was fabricated and its operation demonstrated. The functions of Boolean logic can be changed by the half-period phase shift of the Coulomb-blockade (CB) oscillation of some SETs in the circuit, and an automatic control based on a feedback process is used to attain an exact shift. The amount of charges in the memory node (MN), which is capacitively coupled to the SET, controls the phase of the CB oscillation, and the output signal of the SET controls the amount of charge in the MN during the feedback process. This feedback process automatically adjusts SET output characteristics in such a way that it is used for the multifunctional Boolean logic. We experimentally demonstrated the automatic phase control and examined the speed of the feedback process by SPICE circuit simulation combined with a compact analytical SET model. The simulation revealed that programming time could be of the order of a few ten nanoseconds, thereby promising high-speed switching of the functions of the multifunctional Boolean logic circuit.

Single electron devices are ultra low power and extremely small devices, and suitable for implementation of large scale integrated circuits. Artificial neural networks (ANNs), which require a large number of transistors for being to be applied to practical use, is one of the possible applications of single electron devices. In order to simplify a single electron circuit configuration, we apply stochastic logic in which various complex operations can be done with basic logic gates. We design basic subcircuits of a single electron stochastic neural network, and confirm that backgate bias control and a redundant configuration are necessary for a feedback loop configuration by computer simulation based on Monte Carlo method. The proposed single electron circuit is well-suited for hardware implementation of a stochastic neural network because we can save circuit area and power consumption by using a single electron random number generator (RNG) instead of a conventional complementary metal oxide semiconductor (CMOS) RNG.

To measure the arc motion in interruption process of low voltage molded case circuit breakers (MCCBs) more precisely, a set of novel 2-D optical fiber system is developed. To improve the spatial resolution of optical fibers, lens with inhomogeneous dielectric is fixed on the top of each fiber. Furthermore, the full hardware control logic facilitates the real-time, synchronous and high-speed processing and breaks through the restricted bus operation frequency range and data stream capacity of microprocessor. The Publisher-Subscribe behavioral design pattern is applied to the software and the loosely coupled relationship between glyph and experimental data is once established, the graphic configuration can be implemented for simulation analysis, and the flexibility and applicability of the whole system are obviously improved. It demonstrates that the system provides a better research technique especially for new generation MCCB with gas driven arc.

Mobile agent systems are essential in the next generation of electronic commercial applications. However, existing solutions for mobile agents to sign documents without user intervention are problematic because there is no restriction on who can generate the signatures. In this paper, we present a modified version of undetachable signature scheme with which the power to generate digital signatures can be designated to a neutral party. We also give a transaction model to support the scheme. Discussions regarding the security of the signature scheme as well as some attacks on its application in our model are presented too.

We propose an optical packet switch (OPS) using a hybrid buffer structure for the contention resolution of asynchronous variable length packets. The hybrid buffer consists of a fiber delay line (FDL) buffer as the prime buffer and a shared electronic buffer as the supplementary buffer. For the performance evaluation, a modified void filling scheduling algorithm that can be applied to the OPS was proposed. Simulation results show that the use of the electronic buffer together with the FDL buffer significantly reduce the number of FDLs required for contention resolution and considerably lower packet loss.

A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.

This paper presents the summarized achievements of "Study Group on Software Technology for Radio Equipment" held at TELEC from April 2000 to March 2003. The Study Group specified the essential issues on Software Defined Radio (SDR), and discussed desirable methods to evaluate conformity to technical regulations in radios that can change RF characteristics only by changing software. The biggest objective in SDR is to build the architecture to allow users to install software exclusively in the combination of hardware and software that have passed the certification test. The Study Group has reached a solution by introducing the idea of "tally." This paper explains the concept of tally, and proposes two types of systems to use tallies in checking adaptability in combinations of hardware and software.

We've been developing new electron guns for a high brightness CRT. The electron guns were modified to increase the emission current without the increase of the driving voltage. We achieved the high brightness CRT with "low cut-off electron gun" and the gun was successfully introduced into our multimedia CRT. Now we are developing next generation gun or "double drive electron gun" for larger screen CRT. The gun can emit about double current in comparison with the "low cut-off electron gun."

In optical transport networks that use 2R optoelectronic wavelength converters, performance degradation is expected due to the accumulation of timing-jitter. We theoretically analyze the effects of timing-jitter and the cascadability of 2R optoelectronic wavelength converters based on a nonlinear signal model. We measured the cascadability in a 40-km re-circulation loop for 10 Gb/s signal.

The size of the microscopic electron spot is an important parameter for the white-uniformity of a CRT. It changes as a function of the focus voltage and beam repulsion. This paper explains the mechanism behind this phenomenon. The model is supported by means of measurements.

As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.