An LCD Driver IC includes more than 300 buffer amplifiers on a single chip. The phase compensation capacitors (on-chip Miller capacitors) for the amplifiers are more than 1000 pF and occupy a large chip area. This paper describes a two-gain-stage amplifier in which an on-chip Miller capacitor is not used for phase compensation in an LCD Driver IC. In the proposed amplifier, phase compensation is achieved only by a newly introduced zero, which is formed by the load capacitance and a phase compensation resistor connected between the output of the amplifier and the capacitive load. Designs of the phase compensation resistor and the amplifier before compensation are discussed, considering a typical load capacitance range. The test chip was fabricated. The newly introduced zero successfully stabilized the amplifier. The chip area for the amplifier was reduced by 30-40%, compared with our previously reported one. The current consumption of the amplifier was only 5 µA. The experimental results of the fabricated test chip support that the proposed amplifier is suitable to an LCD driver IC with a smaller chip area.

A 5.3-GHz klystron has been recently designed and fabricated. In many countries, the transmitting frequency of 5.6 GHz (5,600 to 5,650 MHz) is commonly used for C-band meteorological radars. However, 5.3 GHz is generally used in Japan. To detect low-level wind shears by a Doppler radar, it is essential to use a MOPA (Master Oscillator and Power Amplifier) that generates stable coherent microwaves. The klystron is most suitable for this purpose. However, there are no commercially available klystrons in C-band that operate at 5.3 GHz. We developed a klystron for this band, making use of a simulation technique originally devised for S- and X-bands. The klystron operates at frequencies between 5,250 and 5,350 MHz. The typical operating parameters are a peak output power of 200 kW, a pulse width of 1 µs, and an RF duty cycle of 0.002. The klystron, including the electromagnet for focusing the magnetic field, is approximately 67 cm long with a diameter of 40 cm and a weight of 162 kg. Phase modulation is suppressed below 20% of the phase change required for the minimum resolution of Doppler velocity measurement by the radar for which this klystron is employed. The klystron shows favorable performance for Doppler radars operated in major airports in Japan.

A drain avalanche hot carrier lifetime model including a body effect caused by secondary hot electrons has been developed. It has been confirmed that the proposed model fits a wide range of experimental data using a small number of parameters. The model provides a practical modeling methodology for reliability simulation based on parameter extraction at maximum substrate current conditions alone. Simulation accuracy produced by the methodology has been experimentally verified using ring oscillators including NAND gates. It has been demonstrated that simulation accuracy of degradations has become by 0.34 decade better using the new methodology than using that based on the conventional τId/W-Isub/Id model.

STM/STS measurements have been carried out for TTF-TCNQ complex films evaporated on hydrogen-terminated silicon substrates, and the variation of tunneling spectra has been investigated on morphologically different crystal grains. Very thin semiconductive adsorbed layers were found to cover the as-deposited film surfaces. By removing the adsorbed layers, the intrinsic electronic structures of two different phases were revealed. A 'needle phase' which appears at the early stage of film growth has a semiconductive character and a 'granular phase' which grows later has a metallic character similar to bulk crystals. The electronic structure of the needle phase is considered to be affected by the substrate although the crystallographic structure is similar to the bulk crystal of TTF-TCNQ.

The prospects of electron spectroscopy of working organic electronic device structures are discussed. The experimental consideration and the result of actual measurement are presented.

In 1998, Fan and Lei proposed a partially blind signature scheme that could reduce the computation load and the size of the database for electronic cash systems. In this Letter, we show that their scheme could not meet the untraceability property of a blind signature.

We report recent achievements in interfacing Josephson junction circuits with superconductor MicroStrip Lines (MSLs). We studied basic techniques that allow satisfactory operation of different devices with MSLs. Successful operation of the interfaces with very low error rate has been demonstrated even at the MSL resonant frequency.

This paper presents some new protocols for (M+1)st-price auction, a style of auction in which the highest M bidders win and pay a uniform price, determined by the (M+1)st price. A set of distributed servers collaborates to resolve the (M+1)st price without revealing any information in terms of bids including the winners' bids. A new trick to jointly and securely compute the highest value as a degree of distributed polynomials is introduced. The building block requires just one round for bidders to cast bids and one round for auctioneers to determine the winners.

Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.

In this report, we propose a new bilateral floating resistor circuit having both positive and negative resistance values. The equivalent resistance of this floating resistor in CMOS technology can be changed by using controlled-voltages, which is an advantage over polysilicon or diffused resistor in the integrated circuit. Moreover the characteristics of the proposed circuit are independent of the threshold voltage. We have simulated the proposed circuit by using HSPICE. Finally, we have confirmed that the proposed circuit is useful as an analog component.

In this paper, we propose a novel electronic bearer check system (EBC). This system allows the consumer to pay any amount of money below an upper-boundary on the Internet within an expiration period. During each transaction, the consumer does not need to contact the bank's server. Furthermore, this electronic bearer check can be transferred to any third party. The off-line characteristic of our system is very convenient for the consumer. Moreover, the double spending and double depositing problem will not occur in this system. More importantly, the framework of this system provides anonymity to protect customer privacy.

An efficient construction of a permutation network has been proposed by Waksman. However, his construction is only for permutation networks with 2k inputs. This paper provides a construction of permutation networks with arbitrary number of inputs that is an extension of Waksman's construction. By applying our construction to Abe's Mix-net, we can improve the efficiency of the Mix-net.

We have introduced the first electronic cash scheme with unconditional security. That is, even malicious users with unlimited computational ability cannot forge a coin and cannot change user's identity secretly embedded in each coin. While, the spender's anonymity is preserved by our new blind signature scheme based on unconditionally secure signature proposed in [7]. But the anonymity is preserved only computationally under the assumption that Decisional Diffie-Hellman Problem is intractable.

As a new category of the optical application system integrated with electronics, the opto-electronic information system (OEIS) is presented. Combination of the different characteristic technologies, optics and electronics, is expected to be useful for development of an effective and high-performance information systems. The properties of the optical technologies such as parallelism, high-speed, and large information capacity can be utilized for information processing. Even if some of the functions are emulated by the electronics, the optics give more effective solutions. To implement the OEIS, various optoelectronic devices and fabrication technologies are available including vertical cavity surface emitting lasers and spatial light modulators. There are two forms of system construction for the OEIS: an application of optics to an electronic-based system and the reversed form. As examples of the OEIS, the parallel matching architecture (PMA) and the thin observation module by bound optics (TOMBO) are presented. The PMA is an architecture of parallel computing system specified for global processing. This architecture shows a typical strategy to utilize the optical interconnection capability with flexibility of the electronic technology. The TOMBO presents possibility of morphological conversion using combination of the optical and electronic technologies. A compound-eye imaging system and post digital processing enable us to realize a very thin image capturing system. The issues related on development of the OEIS are proper usage of optics, effective fusion of the optical and electronic technologies, methodologies for system construction, fabrication supporting tools, and development of attractive demonstrators other than communication and interconnection fields.

Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.

Today software piracy is a major concern to electronic commerce since a digitized product such as software is vulnerable to redistribution and unauthorized use. This paper presents an enhanced electronic software distribution and software protection model. Authentication scheme of the proposed model is based on zero-knowledge (ZK) proof which requires limited computation. The proposed model considers post installation security using authentication agent. It prevents software piracy and illegal copy. It also provides secure and efficient software live-update mechanism based on traitor tracing scheme. Even if software or personal key is copied illegally, a merchant can trace back to its original owner from the electronic license and personal key. The proposed model provides security and reasonable performance and safety.

The design of an electron gun was examined from the viewpoints of pre-focus lens, main lens, corner focus and cathode current. Accordingly, multi-beam electron gun has been developed to catch up with the remarkable progress of resolution in computer peripheral devices such as digital still cameras and video boards. Multi-beam electron gun has two slot beam apertures of G1 for one cathode, and a key point of its design is to realize two-beam simultaneous convergence and focusing. To satisfy this condition, the divergence angles of electron beam bundles were designed. With this multi-beam electron gun that is superior in both of beam spot size and drive voltage, the 5 million pixels CRT could be realized.

We have carried out a systematic study of the impact of hydrogen exposure on InP HEMTs and GaAs PHEMTs with Ti/Pt/Au gates. Hydrogen poisoning is an important reliability concern in these devices. Our work has provided ample evidence supporting the formation of TiH inside the gate structure upon exposure of HEMTs to a hydrogen environment. The resulting volume expansion of the gate stresses the semiconductor heterostructure underneath and, through the piezoelectric effect, results in a shift of the threshold voltage of the device. This mechanism is largely reversible. Independently of this, we have found that H2 upsets the stoichiometry of the exposed InAlAs barrier in the recessed region right next to the gate. This irreversebly changes the extrinsic sheet carrier concentration in the channel and affects other figures of merit such as the breakdown voltage. This understanding should be instrumental in identifying device-level solutions to this problem.

Decentralized XML databases are often used in Electronic Commerce (EC) business models such as e-brokers on the Web. To flexibly model such applications, we need a modeling language for EC business processes. To this end, we have adopted a query language approach and have designed a query language, called XBML, for decentralized XML databases used in EC businesses. In this paper, we explain and validate the functionality of XBML by specifying e-broker business models and describe the implementation of the XBML server, focusing on the distributed query processing.

The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.