This paper describes a novel Wilkinson power divider operating at two arbitrary different frequencies. The proposed divider consists of two-section transmission lines and a series RLC circuit connected between two output ports. The circuit parameters for a dual-band operation are derived by the even/odd mode analysis. Equal power split, complete matching, and good isolation between two output ports are numerically demonstrated. Dual-band and broadband Wilkinson power dividers can be successfully designed. Finally, verification of this design method is also shown by electromagnetic simulations and experiments.

A novel amplification mechanism of traveling TM wave on an electron beam within a waveguide structure is proposed. Under boundary constraint of the waveguide, a hybrid coupling of longitudinal plasma wave and transverse guided one occurs to result in traveling instability. The instability refers to a backward traveling amplification. The new amplification in the waveguide due to the interactive coupling between the space charge mode and the waveguide one is firstly pointed out. The analysis is extended to the relativistic energy range to get a large gain. The features and properties are discussed for a wide frequency range as well as a high gain-bandwidth product.

Three miniaturized lumped-element power dividers with a filtering function for use in quadrature mixers are described. Simulation results showed that they can be miniaturized, as compared to conventional ones with open/short stubs, while maintaining the filter characteristics. A fabricated 0.95-GHz 0power divider with a filtering function had a chip size about half that of a conventional lumped-element one. Its insertion loss at 0.950.05 GHz was 4.00.1 dB.

This paper represents a novel second harmonic power combining oscillator using mutually synchronized Gunn diodes embedded on slot line resonators. A both-sided MIC technology is adopted in the oscillator. The oscillator consists of Gunn diodes, slot line resonators and microstrip lines. By embedding Gunn diodes on the slot line resonators, the harmonic RF signal can be generated very easily. The microstrip lines are used for the power combining output circuit. This oscillator has advantages such as easy circuit design, simple circuit configuration and miniaturization of the circuit size. The second harmonic oscillator is designed and fabricated in K-Band. The output power is +5.75 dBm at the design frequency of 19.0 GHz (2f0) with the phase noise of -111.7 dBc/Hz at the offset frequency of 1 MHz. Excellent suppression of the undesired fundamental frequency signal (f0) of -39 dBc is achieved.

New structure of broadband planar antenna, combining monopole elements with electromagnetic bandgap (EBG) structures, is proposed. The antenna has a simple single layer structure and unique beam pattern. Antenna is fabricated on a surface of a single layer dielectric substrate and back side of the substrate is covered with metal layer. At the center of the substrate, an inverted L monopole strip is fabricated and on both sides of this monopole, EBG unit cells are placed. By tuning monopole length and EBG bandgap frequency, the monopole resonates even if metal layer exists close to the monopole radiator. Three types of EBG, one dimensional (1D), square two dimensional (2D) and hexagonal 2D, are tested. By combining monopole strip with hexagonal 2D-EBG, the bandwidth of prototype antenna, whose return loss is less than 10 dB, is 840 MHz in 5 GHz band. To control beam patterns of antenna, parasitic elements are placed close to the monopole radiator and EBGs. These parasitic elements work as directors of quasi Yagi-Uda antenna and radiation gain at lower tilt angles is improved.

The Earth will require sustainable electricity sources equivalent to 3 to 5 times the commercial power presently produced by 2050. Solar Power Satellite (SPS) is one option for meeting the huge future energy demand. SPS can send enormous amounts of power to the Earth as the form of microwave (MW). A highly efficient microwave power transmission (MPT) system is needed for SPS. A critical goal of SPS is to maintain highest Beam Efficiency (BE) because the microwaves from SPS will be converted to utility power unlike the MW from communication satellites. Another critical goal of SPS is to maintain Side Lobe Levels (SLL) as small as possible to reduce interference to other communication systems. One way to decrease SLL and increase BE is the edge tapering of a phased array antenna. However, tapering the excitation requires a technically complicated system. Another way of achieving minimum SLL is with randomly spaced element position but it does not guarantee higher BE and the determination of random element position is also a difficult task. Isosceles Trapezoidal Distribution (ITD) edge tapered antenna was studied for SPS as an optimization between full edge tapering and uniform amplitude distribution. The highest Beam Collection Efficiency (BCE) and lowest SLL (except maximum SLL) are possible to achieve in ITD edge tapering and ITD edge tapered antenna is technically better. The performance of ITD is further improved from the perspective of both Maximum Side Lobe Level (MSLL) and BE by using unequal spacing of the antenna elements. A remarkable reduction in MSLL is achieved with ITD edge tapering with Unequal element spacing (ITDU). BE was also highest in ITDU. Determination of unequal element position for ITDU is very easy. ITDU is a newer concept that is experimented for the first time. The merits of ITDU over ITD and Gaussian edge tapering are discussed.

The concept of placing enormous Solar Power Satellite (SPS) systems in space represents one of a handful of new technological options that might provide large scale, environmentally clean base load power to terrestrial markets. Recent advances in space exploration have shown a great need for antennas with high resolution, high gain and low side lobe level (SLL). The last characteristic is of paramount importance especially for the Microwave Power Transmission (MPT) in order to achieve higher transmitting efficiency (TE) and higher beam collection efficiency (BCE). In order to achieve low side lobe levels, statistical methods play an important role. Various interesting properties of a large antenna arrays with randomly, uniformly and combined spacing of elements have been studied, especially the relationship between the required number of elements and their appropriate spacing from one viewpoint and the desired SLL, the aperture dimension, the beamwidth and TE from the other. We propose a new unified approach in searching for reducing SLL by exploiting the interaction of deterministic and stochastic workspaces of proposed algorithms. Our models indicate the side lobe levels in a large area around the main beam and strongly reduce SLL in the entire visible range. A new concept of designing a large antenna array system is proposed. Our theoretic study and simulation results clarify how to deal with the problems of side lobes in designing a large antenna array, which seems to be an important step toward the realization of future SPS/MPT systems.

This paper presents some structures of artificial coplanar waveguide with very slow phase velocity and their applications to a design of compact 3-dB branch-line couplers. The slow-wave structure is constructed by periodically loading both of series inductance and shunt capacitance. First, a basic miniature branch-line coupler is designed and consequently considerable size-reduction of about 1/4 is obtained. Next, a broadband design technique is described using open-circuited quarter-wavelength series-stubs added at each port as a matching network. By size-reducing the series-stubs and branchline sections, a very compact broadband coupler with a good hybrid performance over a wide bandwidth of 31 percent or more is realized. The design concepts and procedures are verified both numerically and experimentally.

Microwave measurement methods necessary to characterize copper-clad dielectric laminate substrates are reviewed to realize more precise design of planar circuits: that is, the balanced-type circular disk resonator method for the relative complex permittivity in the normal direction εrn and tan δn, the cavity resonator method and the cut-off waveguide method for one in the tangential direction εrt and tan δt, and the dielectric resonator method for the surface and interface conductivity of copper foil σs and σi. The measured results of the frequency and temperature dependences of these parameters are presented for a PTFE substrate and a copper-clad glass cloth PTFE laminate substrate.

This paper presents a model for the variation in height of the subscriber station (SS) antenna with respect to the path loss for microwave-band wireless access systems. The propagation mechanism that causes the dependency of the height variation characteristics of the received level at an SS on the SS location and operating frequency is clarified in terms of geometrical optics (GO) using the uniform geometrical theory of diffraction (UTD). The height variation characteristics strongly depend on whether or not regular reflected waves that have a higher level than that of the diffracted wave arrive at the SS. A representation of the model is shown. The model is validated using measured data at 2.2, 5.2, and 25.15 GHz and the validity of the model is shown. This model is useful in the radio zone design of microwave-band broadband wireless access (BWA) systems operating in a non-line-of-sight environment, and in estimating the height gain at a mobile station antenna for mobile communications.

This paper clarifies the sideband suppression ratio (SSR) value needed for multi-carrier signal modulation in an optical single sideband (SSB) modulator. An SSR value of about 25 dB is found to be sufficient for broadcast satellite (BS) multi-carrier signal modulation. For FM converted CATV signal modulation, an SSR value of about 10 dB is sufficient. In addition, the properties of cascaded lithium niobate Mach-Zehndar (LN MZ) optical SSB modulators are clarified to be better than those of the conventional single LN MZ optical SSB modulator with nearly the same SSR value of 27 dB.

Application of microwave and millimeter-wave circuit technologies to InGaP-HBT ICs for 40-Gbps optical-transmission systems is demonstrated from two aspects. First, ICs for various important functions -- amplification of data signals, amplification, frequency doubling, and phase control of clock signals -- are successfully developed based on microwave and millimeter-wave circuit configurations mainly composed of distributed elements. A distributed amplifier exhibits ≥164-GHz gain-bandwidth product with low power consumption (PC) of 71.2 mW. A 20/40-GHz-band frequency doubler achieves wideband performance (40%) with low PC (26 mW) by integrating a high-pass filter and a buffer amplifier (as a low-pass filter). A compact 40-GHz analog phase shifter, 20- and 40-GHz-band clock amplifiers with low PC are also realized. Second, a familiar concept in microwave-circuit design is applied to a high-speed digital circuit. A new approach -- inserting impedance-transformer circuits -- to enable 'impedance matching' in digital ICs is successfully applied to a 40-Gbps decision circuit to prevent unwanted gain peaking and jitter increase caused by transmission lines without sacrificing chip size.

An experimental study concerning Ultra Wideband (UWB) Microwave Radar for breast cancer detection is described. A simple phantom, consisting of a cylindrical plastic container with a low dielectric constant material imitating fatty tissues and a high dielectric constant object emulating tumour, is scanned with a tapered slot antenna operating between 3.1 to 10.6 GHz. A successful detection of a target is accomplished by a visual inspection of a two-dimensional image of the scanned phantom

This paper proposes a new type of compact waveguide directional coupler, which is constructed from two crossed E-plane rectangular waveguide with two metallic posts in the square junction and one metallic post at each port. The metallic posts in the square junction are set symmetrically along a diagonal line to obtain the directivity properties. The metallic post inserted at each input/output waveguide port can realize a matched state. Tight-coupling properties 0.79-6 dB are realized by optimizing the dimension of the junction and the positions/radii of the posts. The design results are verified by an em-simulator (Ansoft HFSS) and experiments.

Though microwave emissions in association with hypervelocity impacts have been confirmed experimentally, the emission characteristics and the emission mechanism have not yet been made clear. For example, whether the emission is noise or a coherent signal is not known. In this paper, two kinds of analyses, output waveform analysis and spectral analysis, are discussed. Regarding output waveform analysis, microwave pulses are simulated on the basis of a microcrack model in consideration of discharge current, and are compared with experimental pulses in terms of the pulse shape and width. Regarding spectral analysis, the intensity and phase of waveforms are calculated in the frequency domain to examine the frequency characteristics. The spectral intensity is nearly flat and the phase has coherency. Accordingly, the microwave emission is not noise but a sequence of independent pulses.

FM converted CATV and super high frequency satellite TV signal transmission using lithium niobate Mach-Zehnder optical SSB modulator is proposed and demonstrated. Simultaneous FM-converted 40 CATV signal carriers (from 93 to 375 MHz) and 104 super high frequency satellite TV signal carriers (from 11.7 to 20.2 GHz) could be transmitted with good noise properties and distortion quality over 40 km of dispersive SMF with chromatic dispersion of 680 ps/nm. We clarify the required phase and power values by experiments on the relationship between sideband suppression ratio (SSR) and the phase/power to LN MZ optical SSB modulator. For instance, the absolute value of phase and power should be less than 5 degrees and 0.4 dB, respectively, to obtain SSR values above 35 dB.

The trend of microwave circuits has been toward highly integrated systems. Most design tools for designing microwave circuits mounted the linear or the nonlinear devices adopt the fundamental circuit theory using the S matrix on the frequency domain. The harmonic balance method is also used to correspond to the nonlinear circuit. Therefore, the effect of the electromagnetic field, for example, a mutual coupling between sub-circuits through the space is almost disregarded. To calculate these circuits included its surrounding electromagnetic field, the finite difference time domain method combined with the equivalent circuit simulation had been presented as the lumped element FDTD (LE-FDTD) method. In general, even if an analytical target is a linear circuit, the FDTD method requires very long analytical time. In this paper, we propose an efficient LE-FDTD method to reduce the analytical time. We investigate its efficiency to compare with the conventional LE-FDTD method or measurements, consequently, it is confirmed that the proposal method requires only at analytical time of 1/10 compared with the conventional method. We also show that the proposal method is able to analyze characteristics of the active integrated antenna (AIA) which are practicably impossible to analyze by using the conventional method.

In this paper, we propose an accurate and scalable S-parameter de-embedding method for RF/microwave on-wafer characterization of silicon MOSFETs. Based on cascade configurations, this method utilizes planar open, short, and thru standards to estimate the effects of surrounding parasitic networks on a MOS transistor. The bulk-shielded open and short standards are used to simulate and de-embed the probe-pad parasitics. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate and drain terminals of the MOSFET. To further eliminate the parasitics of dangling leg in source terminal of the MOSFET, we also introduce the microwave and multi-port network analysis to accomplish the two-port-to-three-port transformation for S-parameters. The MOSFET and its corresponding de-embedding standards were fabricated in a standard CMOS process and characterized up to 40 GHz. The scalability of the open, short, and thru standards is demonstrated and the performance of the proposed de-embedding procedure is validated by comparison with several de-embedding techniques.

This paper proposes a design method of a Doherty amplifier, which can determine the most efficient backed-off point of the amplifier by adjusting a load modulation parameter. The parameter is defined through the design of output transmission line of a carrier and a peak amplifier using a virtual open stub technique. This paper describes the design results using the technique to optimize efficiency of a Doherty amplifier for an orthogonal frequency division multiplexing (OFDM) signal, and parameter adjustment for a linearized Doherty amplifier using an adaptive digital predistortion (ADPD). Applying this method, the developed 250 W ADPD Doherty amplifier has achieved drain efficiency of 43.4% and intermodulation (IM) distortion of -48.3 dBc with output power of 44.1 dBm (10.1 dB output backed-off) at 563 MHz using an OFDM signal for integrated services digital broadcasting-terrestrial (ISDB-T).

This paper describes two different types of GaAs-HBT compatible, base-collector diode 0/20-dB step attenuators--diode-linearizer type and harmonics-trap type--for 3.5-GHz-band wireless applications. The two attenuators use an AC-coupled, stacked type diode switch topology featuring high power handling capability with low bias current operation. Compared to a conventional diode switch topology, this topology can improve the capability of more than 6 dB with the same bias current. In addition, successful incorporation of a shunt diode linearizer and second- and third-harmonic traps into the attenuators gives the IM3 distortion improvement of more than 7 dB in the high power ranging from 16 dBm to 18 dBm even in the 20-dB attenuation mode when IM3 distortion levels are basically easy to degrade. Measurement results show that both the attenuators are capable of delivering power handling capability (P0.2 dB) of more than 18 dBm with IM3 levels of less than -35 dBc at an 18-dBm input power while drawing low bias currents of 3.8 mA and 6.8 mA in the thru and attenuation modes from 0/5-V complementary supplies. Measured insertion losses of the linearizer-type and harmonics-trap type attenuators in the thru mode are as low as 1.4 dB and 2.5 dB, respectively.