This letter describes damages of piezoelectric polymer using in hydrophones to measure high acoustic pressures at the focal point of Extracorporeal Shockwave Lithotripter (ESWL).

The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 1013 atoms/cm2 were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.

Logarithmic number systems (LNS) provide a very fast computational method. Their exceptional speed has been demonstrated in signal processing and then in computer graphics. But the precision problem of LNS in computer graphics has not been fully examined. In this paper analysis is made for the problem of LNS in picture generation, in particular for circle drawing. Theoretical error analysis is made for the circle drawing. That is, some expressions are developed for the relative error variances. Then they are examined by simulation experiments. Some comparisons are also done with floating point arithmetic with equivalent word length and dynamic range. The results show that the theory and the experiments agree reasonably well and that the logarithmic arithmetic is superior to or at least comparable to the corresponding floating point arithmetic with equivalent word length and dynamic range. Those results are also verified by visual inspections of actually drawn circles. It also shows that the conversion error (from integer to LNS), which is inherent in computer graphics with LNS, does not make too much influence on the total computational error for circle drawing. But it shows that the square-rooting makes the larger influence.

Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.

Hydrogen termination of HF-treated Si surfaces and the oxidation kinetics have been studied by x-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FT-IR) Attenuated Total Reflection (ATR). The oxidation of hydrogen-terminated Si in air or in pure water proceeds parallel to the surface presumably from step edges, resulting in the layer-by-layer oxidation. The oxide gryowth rate on an Si(100) surface is faster than (110) and (111) when the wafer is stored in pure water. This is interpreted in terms of the steric hindrance against molecular oxygen penetration throughth the (110) and (111) surfaces where the atom void size is equal to or smaller than O2 molecule. The oxide growth rate in pure water for heavily doped n-type Si is significantly high compared to that of heavily doped p-type Si. This is explained by the conduction electron tunneling from Si to absorbed O2 molecule to form the O2- state. O2- ions easily decompose and induce the surface electric field, enhancing the oxidation rate. It is found that the oxidation of heavily doped n-type Si in pure water is effectively suppressed by adding a small amount (1003600 ppm) of HCl.

Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110-6 Torr, roughens the surface.

We have found out the effects of surfactant addition to developer on the developing characteristics: very uniform developing, scum-free developing, contact hole formation at lower exposure energy and substrate surfaces protection. Although these are excellent effects required for ULSI manufacturing, we have also discovered the problem that surfactant added to developer remains after the developing process. We has successfully established two effective methods for removing residual surfactant: the addition of 0.15 wt% hydrogen peroxide to surface-active developer, and 1-minute ozone-added ultrapure water rinsing at room temperature. We can therefore make best use of the developing characteristics of surface-active developer without any degradations.

An extremely accurate and very wide-band quadrature modulator IC fabricated on a single chip using bipolar technology is presented. The characteristics of this quadrature modulator IC are much superior to conventional ones (modulation phase error and deviation from quadrature is about 1/10), and this IC is applicable to high modulation schemes such as 256 QAM. In this circuit, the phase difference between local signals input to each of two balanced modulators is detected by a phase detector, and a variable phase shifter in the local port is controlled automatically by the detected signals. This, along with the use of a wide-band variable phase shifter, enables the phase difference between the local signals input to the balanced modulators to be adaptively controlled to 90 degrees in wide frequency bands. In addition, a design method for the balanced modulators to obtain small modulation phase error is described. Based on this design method, a highly accurate quadrature modulator IC was fabricated, in which two balanced modulators, the phase detector, and the variable phase shifter were integrated on a single chip. Phase deviation from quadrature in the local signals was reduced to less than 0.3 degrees in the wide frequency bands of more tham 60 MHz. The modulation phase error of the balanced modulators wes less than 0.2 degrees at 140 MHz, and less than 2.5 degrees at up to 1.3 GHz.

A theoretical conjecture on fractal dimensions of a dendrite distribution in neural networks is presented on the basis of the dendrite tree model. It is shown that the fractal dimensions obtained by the model are consistent with the recent experimental data.

This paper examines the key technologies and applications of optical frequency division multiplexing (OFDM) systems. It is clarified that a 100-channel OFDM system is feasible as a result of multichannel frequency stabilization, common optical amplification and channel selection utilizing a tunable optical filter. Transmission limitation due to fiber four-wave mixing is also described. Major functions and applications of the OFDM are summarized and the applicability of OFDM add/drop multiplexing is examined.

This paper describes a new approach towards the performance-driven layout for analog LSIs. Based on our approach, we developed an automatic performance-driven layout system LIBRA. The performance-driven layout has an advantage that numerical evaluations of performance requirements may exactly specify layout requirements so that a better layout result will be expected with regard to both the size and the performances. As the first step to the final goal, we only concern with the DC characteristics of analog circuits affected by the placement and routing. First of all, LIBRA performs the sensitivity analysis with respect to process parameters and wire parasitics, which are major causes for DC performance deviations of analog LSIs, so as to describe every perfomance deviation by its first order approximation. Based on the estimations of those performance deviations, LIBRA designs the placement of devices. The placement approach here is the simulated annealing method driven by their circuit performance specification. The routing of inter-cell wires is performed according to the priority of the larger total wire sensitivities in the net by the maze router. Then, the simple compaction eliminates the empty space as much as possible. After that, the power lines optimization is performed so as to minimize the ferformance deviations. Finally, an advantage of the performance improvement by our approach is demonstrated by showing a layout result of a practical bipolar circuit and its excellent performance evaluations.

This paper proposes a designing algorithm for quadrilateral recursive filters which consist of four quarter-plane filters in the four quadrants. This can realize a perfect zero-phase filtering which is essential for image processing. Furthermore, several parallel processing algorithms capable of performing under very high parallel efficiency are developed on line-connected and mesh-connected processor arrays. By these proposals, the advantage of two-dimensional non-causal zero-phase recursive digital filters is made clear.

This paper presents a new fast fault simulation algorithm using a content addressable memory, which deals with zero-delay fault simulation of gate-level synchronous sequential circuits. The computation time of fault simulation for a single vector under the single stuck-at fault model is O(n2) for all the existing fault simulation algorithms on a sequential computers. The new algorithm attempts to reduce the computation time by processing many faults at a time by utilizing a property that a content addressable memory can be regarded as an SIMD type parallel computation machine. According to theoretical estimation, the speed performance of a simulator based on the proposed algorithm is equivalent to a fast fault simulator implemented on a vector supercomputer for a circuit of about 2400 gates.

A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.

In the delayed regulation medel, X(t+1)=AX(t){1-X(t-1)}, new bifurcation regions which have been overlooked in the past studies were found out for -1.01A0 and 2.27563A2.2838. In the former fixed point lying at 0 is destabilized at A=-1, and new type bifurcation is induced for A-1, where oscillation with saw-tooth waveform is observed. In the latter the stability once lost for A2.271 is restored for A2.27563, and the stable region continues up to A=2.2838.