The frequency hopping sequence plays a crucial role in determining the system's anti-jamming performance, in frequency hopping communication systems. If the adjacent frequency points of FHS can ensure wide-gap, it will better improve the anti-interference capability of the FH communication system. Moreover, if the period of the sequence is expanded, and each frequency point does not repeat in the same sequence, the system's ability to resist electromagnetic interference will be enhanced. And a one-coincidence frequency-hopping sequence set consists of FHSs with maximum Hamming autocorrelation 0 and cross-correlation 1. In this paper, we present two constructions of wide-gap frequency-hopping sequence sets. One construction is a new class of wide-gap one-coincidence FHS set, and the other is a WGFHS set with long period. These two WGFHS sets are optimal with respect to WG-Peng-Fan bound. And each sequence of these WGFHS sets is optimal with respect to WG-Lempel-Greenberger bound.

In frequency hopping communication, time delay and Doppler shift incur interference. With the escalating upgrading of complicated interference, in this paper, the time-frequency two-dimensional (TFTD) partial Hamming correlation (PHC) properties of wide-gap frequency-hopping sequences (WGFHSs) with frequency shift are discussed. A bound on the maximum TFTD partial Hamming auto-correlation (PHAC) and two bounds on the maximum TFTD PHC of WGFHSs are got. Li-Fan-Yang bounds are the particular cases of new bounds for frequency shift is zero.

Frequency-hopping sequence (FHS) sets with low-hit-zone (LZH) can be well applied in quasi-synchronous (QS) frequency-hopping multiple-access (FHMA) systems to reduce the mutual interference among different users. On the other hand, LHZ-FHS sets with wide-gap (WG) property can effectively resist the broadband blocking interference, the single frequency narrowband interference, the multipath fading and the tracking interference. In this letter, a new family of WG-LHZ-FHS sets is constructed. Besides, these new WG-LHZ-FHS sets possess optimal average periodic Hamming correlation (APHC) properties.

Sketch face recognition refers to matching photos with sketches, which has effectively been used in various applications ranging from law enforcement agencies to digital entertainment. However, due to the large modality gap between photos and sketches, sketch face recognition remains a challenging task at present. To reduce the domain gap between the sketches and photos, this paper proposes a cascaded transformation generation network for cross-modality image generation and sketch face recognition simultaneously. The proposed cascaded transformation generation network is composed of a generation module, a cascaded feature transformation module, and a classifier module. The generation module aims to generate a high quality cross-modality image, the cascaded feature transformation module extracts high-level semantic features for generation and recognition simultaneously, the classifier module is used to complete sketch face recognition. The proposed transformation generation network is trained in an end-to-end manner, it strengthens the recognition accuracy by the generated images. The recognition performance is verified on the UoM-SGFSv2, e-PRIP, and CUFSF datasets; experimental results show that the proposed method is better than other state-of-the-art methods.

This paper proposes an id-eCK secure identity-based authenticated key exchange (ID-AKE) scheme, where the id-eCK security implies that a scheme resists against leakage of all combinations of master, static, and ephemeral secret keys except ones trivially break the security. Most existing id-eCK secure ID-AKE schemes require two symmetric pairing operations or a greater number of asymmetric pairing, which is faster than symmetric one, operations to establish a session key. However, our scheme is realized with a single asymmetric pairing operation for each party, and this is an advantage in efficiency. The proposed scheme is based on the ID-AKE scheme by McCullagh and Barreto, which is vulnerable to an active attack. To achieve id-eCK security, we apply the HMQV construction and the NAXOS technique to the McCullagh-Barreto scheme. The id-eCK security is proved under the external Diffie-Hellman for target group assumption and the q-gap-bilinear collision attack assumption.

A key driver of software business growth in developing countries is the survival of software small and medium-sized enterprises (SMEs). Quality of products is a critical factor that can indicate the future of the business by building customer confidence. Software development agencies need to be aware of meeting international standards in software development process. In practice, consultants and assessors are usually employed as the primary solution, which can impact the budget in case of small businesses. Self-assessment tools for software development process can potentially reduce time and cost of formal assessment for software SMEs. However, the existing support methods and tools are largely insufficient in terms of process coverage and semi-automated evaluation. This paper proposes to apply a knowledge-based approach in development of a self-assessment and gap analysis support system for the ISO/IEC 29110 standard. The approach has an advantage that insights from domain experts and the standard are captured in the knowledge base in form of decision tables that can be flexibly managed. Our knowledge base is unique in that task lists and work products defined in the standard are broken down into task and work product characteristics, respectively. Their relation provides the links between Task List and Work Product which make users more understand and influence self-assessment. A prototype support system was developed to assess the level of software development capability of the agencies based on the ISO/IEC 29110 standard. A preliminary evaluation study showed that the system can improve performance of users who are inexperienced in applying ISO/IEC 29110 standard in terms of task coverage and user's time and effort compared to the traditional self-assessment method.

In this paper, we propose the low voltage CMOS current mode reference circuit using self-regulator with adaptive biasing technique. It drastically reduces the line sensitivity (LS) of the output voltage and the power supply voltage dependence of the temperature coefficient (TC). The self-regulator used in the proposed circuit adaptively generates the minimum voltage required the reference core circuit following the PVT (process, voltage and temperature) conditions. It makes possible to improve circuit performances instead of slightly increasing minimum power supply voltage. This proposed circuit has been designed and evaluated by SPICE simulation using TSMC 65nm CMOS process with 3.3V (2.5V over-drive) transistor option. From simulation results, LS is reduced to 0.0065%/V under 0.8V < VDD < 3.0V. TC is 67.6ppm/°C under the condition that the temperature range is from -40°C to 125°C and VDD range is from 0.8V to 3.0V. The power supply rejection ratio (PSRR) is less than -80.4dB when VDD is higher than 0.8V and the noise frequency is 100Hz. According to the simulation results, we could confirm that the performances of the proposed circuit are improved compared with the conventional circuit.

This paper proposes a dual-band dual-rectangular-loop circular polarization antenna for Global Navigation Satellite Systems (GNSSs). The proposed antenna combines two large outer rectangular loops with two small inner loops. Each large outer loop is connected to its corresponding small inner rectangular loop. Each loop has gaps located symmetrically with respect to a feed point to produce Right Handed Circular Polarization (RHCP). The gap position and the shape of the rectangular loops are very important to adjust both the impedance matching and circular polarization characteristics. The proposed antenna offers dual-band Voltage Standing Wave Ratio (VSWR) and Axial Ratio (AR) frequency characteristics that include the L1 (1575.42 MHz) and L2 (1227.60 MHz) bands. The antenna gains exceed 8.7 dBi. Broad AR elevation patterns are obtained. These antenna characteristics are well suited to precise positioning.

The gap states of tetratetracontane (C44H90; TTC), which is a model oligomer of polyethylene, was examined by using high-sensitivity UV photoemission spectroscopy (HS-UPS). The high sensitivity enabled us to directly observe the weak gap states distributed in the HOMO-LUMO gap from the valence band top to 3.0 eV below the vacuum level. On the basis of the density-of-states derived from UPS results, the tribocharging nature of polyethylene was discussed in comparison with our previous result for nylon-6,6 film.

In this paper, we propose the novel low voltage CMOS current mode reference circuit. It reduces the minimum supply voltage by consisting the subthreshold two stage operational amplifier (OPAMP) which is regarded as the combination of the proportional to absolute temperature (PTAT) and the complementary to absolute temperature (CTAT) current generators. It makes possible to implement without extra OPAMP. This proposed circuit has been designed and evaluated by SPICE simulation using TSMC 65nm CMOS process with 3.3V (2.5V over-drive) transistor option. From simulation results, the line sensitivity is as good as 0.196%/V under the condition that the range of supply voltage (VDD) is wide as 0.6V to 3.0V. The temperature coefficient is 71ppm/ under the condition that the temperature range is from -40 to 125 and VDD=0.6V. The power supply rejection ratio (PSRR) is -47.7dB when VDD=0.6V and the noise frequency is 100Hz. According to comparing the proposed circuit with prior current mode circuits, we could confirm the performance of the proposed circuit is better than that of prior circuits.

This paper presents a new form of gap waveguide technology - the half-height-pin gap waveguide. The gap waveguide technology is a new transmission line technology introduced recently, which makes use of the stopband of wave propagation created by a pair of parallel plates, one PEC (perfect electric conductor) and one PMC (perfect magnetic conductor), with an air gap in between less than a quarter of the wavelength at operation frequency. Applying this PEC/PMC gap plate structure to ridged waveguides, rectangular hollow waveguides and microstrip lines, we can have the ridged gap waveguides, groove gap waveguides and inverted gap waveguide microstrip lines, respectively, without requiring a conductive or galvanic contact between the upper PEC and the lower PMC plates. This contactless property of the gap waveguide technology relaxes significantly the manufacturing requirements for devices and antennas at millimeter wave frequencies. PMC material does not exist in nature, and an artificial PMC boundary can be made by such as periodic pin array with the pin length about a quarter wavelength. However, the quarter-wavelength pins, referred to as the full-height pins, are often too long for manufacturing. In order to overcome this difficulty, a new half-height-pin gap waveguide is introduced. The working principles and Q factors for the half-height-pin gap waveguides are described, analyzed and verified with measurements in this paper. It is concluded that half-height-pin gap waveguides have similar Q factors and operation bandwidth to the full-height-pin gap waveguides. As an example of the applications, a high gain planar array antenna at V band by using the half-height-pin gap waveguide has been designed and is presented in the paper with a good reflection coefficient and high aperture efficiency.

Properties of a class of M-PhC (metallic-photonic-crystal) point-defect-cavities (PDCs) with a centrally-loaded rod are theoretically and experimentally investigated. After the computation of the resonant frequencies and Q-factors of the resonant modes, the PDCs are fabricated and experimentally measured to validate the simulation results.

In this paper, we describe the fabrication of low leakage Superconductor/Insulator/Superconductor (SIS) junctions with a Nb/Al/AlOx/Al/Nb structure. In other words, an extra Al layer was added onto the top of the insulator in a conventional Nb/Al/AlOx/Nb junction. We measured the current and voltage (IV) characteristics of both the Nb/Al/AlOx/Al/Nb and Nb/Al/AlOx/Nb junctions at the temperature of liquid helium, and found that the sub-gap leakage current in the Nb/Al/AlOx/Al/Nb junctions was much lower than that of the Nb/Al/AlOx/Nb junctions. Our analysis of the IV characteristics indicates that the quality of the AlOx insulator used in the Nb/Al/AlOx/Al/Nb junction was close to ideal, while the insulator used in the Nb/Al/AlOx/Nb junction had possible defects. According to the scanning transmission electron microscope (STEM) images and energy-dispersive X-ray spectroscopy (EDX) analyses, it was evident that the Nb atoms diffused into the bottom electrode of the Nb/Al/AlOx/Nb junction, while a smaller number diffused into the bottom electrode of the Nb/Al/AlOx/Al/Nb junction. Therefore, we conclude that the extra Al layer effectively acted as a buffer layer that prevented the Nb atoms from diffusing into the insulator and bottom electrode. The presence of the top Al layer is expected to favorably improve the quality of junctions with a very high current density, and support the extension of the RF and IF bandwidths of SIS mixers.

We propose a novel single polarization photonic band gap fiber (SP-PBGF) with an anisotropic air hole lattice in the core. An SP-PBGF with an elliptical air hole lattice in the core recently proposed can easily realize SP guidance utilizing the large difference of cutoff frequency for the x- and y-polarized modes. In this paper, in order to achieve SP guidance based on the same principle of this PBGF, we utilize an anisotropic lattice of circular air holes instead of elliptical air holes to ease the fabrication difficulty. After investigating the influence of the structural parameters on SP guidance, it is numerically demonstrated that the designed SP-PBGF has 381 nm SP operating band.

A CMOS bandgap reference circuit without resistors, which can successfully operate under 1V supply voltage is proposed. The improvement is realized by the technique of the voltage divider and a new current source. The most attractive merit is that the proposed circuit breaks the bottleneck of low supply voltage design caused by the constant bandgap voltage value (1.25V). Moreover, the temperature coefficient of the reference voltage Vref is improved by compensating the temperature dependence caused by the current source. The simulation results using a standard CMOS 0.18 um process show that the value of Vref can be achieved around 0.5 V with a minimum supply voltage of 0.85 V. Meanwhile, the temperature coefficient of the output voltage is only 3.5ppm/°C from 0 °C to 70 °C.

This paper shows that the induced peak voltage on the short monopole antenna by the EM field radiated from a small gap discharge when the gap width was experimentally changed from 10 to 360µm was not directly proportional to the discharge voltage between the gap. It was found that the 10mm short monopole antenna induced peak voltage had a peak value between 40 and 60µm gap width.

This paper proposes a sector base station antenna for mobile wireless communication systems employing multiple woodpile metamaterial reflectors and a multiband radiator that establishes the same beamwidth in the horizontal plane for more than two frequency bands. Electromagnetic Band Gap (EBG) characteristics of each metamaterial reflector can be controlled through structural parameters of the woodpile reflector, e.g., the rod width and rod spacing. As an example of the proposed antenna, a design for a triple-frequency-band antenna that radiates at 800 MHz, 2,GHz, and 4,GHz is shown. The algorithm used to adjust the beamwidth of the proposed antenna is newly introduced and adjusts the beamwidth to be the same for each band using the rod width of the woodpile. A prototype of the proposed antenna has the approximately 90$^{circ}$ beamwidth in the horizontal plane at the three frequencies, and the measurement results agree well with the electromagnetic field simulation results.

This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories. Since the optimum SET and RESET voltages linearly changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read current depends on both read temperature and the write temperature and has exponential dependence on the read temperature. Thus, the binning technique is applied for each read and write temperature regions. The proposed variable TC generator can achieve below ±0.5 LSB precision from the measured differential non-linearity and integral non-linearity. As a result, the temperature characteristics of both the linear write voltage and the exponential read current can be tracked with the proposed variation tolerant linear temperature coefficient current generator.

A microwave power amplifier with independently biased InGaP/GaAs HBTs is proposed, and its superior performance is confirmed. Using harmonic balance simulation, the optimal bias conditions for an amplifier with two independently biased InGaP/GaAs HBTs were investigated with the aim of achieving high-efficiency low-distortion performance. A 1.9-GHz-band cascode power amplifier was designed and fabricated. Power efficiencies and third-order intermodulation distortions (IMD3) for the fabricated amplifier were estimated. The collector bias voltage of the first stage transistor mainly affects power-added efficiency (PAE). The base bias current of the first-stage HBT mainly affects IMD3 characteristics, and that of the second-stage HBT mainly affects PAE. The proposed amplifier shows superior performance when compared to a conventional cascode amplifier. The amplifier achieved a maximum PAE of 68.0% with an output power of 14.8dBm, and IMD3 better than -35dBc with a PAE of 25.1%, for a maximum output power of 10.25dBm at 1.9GHz. A PAE of more than 60% was achieved from 1.87 to 1.98GHz.

Electromagnetic scattering and radiation in cylindrical electromagnetic bandgap (EBG) structure is analyzed. The radiated field from a line source placed inside the eccentric configuration of the cylindrical EBG structure and plane wave incident on the cylindrical EBG structure is numerically studied based on the method proposed by the authors in their early papers. Using the developed formulation, it is shown first time that when the cylindrical EBG is illuminated by plane wave of particular resonance frequencies, the field are strongly enhanced or shaded inside the cylindrical EBG structure and this effect depends on the angle of incidence of the plane waves. We give a deep physical insight into explanation of this phenomenon based on the Lorentz reciprocity relation for cylindrical structures.