Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.

The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1 GHz up to 100 GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.

To reduce the gate leakage current of AlGaN/GaN HEMTs, we selected ITO/Ni/Au for Schottky electrodes and Schottky characteristics were compared with those of Ni/Au electrodes. ITO/Ni/Au and Ni/Au electrodes were deposited by vacuum evaporation and annealed at 350 in nitrogen atmosphere. From the I-V evaluation results of ITO/Ni/Au electrodes, forward and reverse leakage currents were reduced. Schottky characteristics of ITO/Ni/Au electrodes were also improved compared to these of Ni/Au electrodes. In addition, substantial decrease of leakage currents was confirmed after the annealing of HEMTs with ITO/Ni/Au electrodes. This may be explained that ITO/AlGaN interface state became lower by the annealing. By the temperature dependence of I-V curves, clear dependence was confirmed for the gates with ITO/Ni/Au electrodes. On the other hand, small dependence was observed for those with Ni/Au electrodes. From these results, tunnel leakage currents were dominant for the gates with Ni/Au electrode. Thermal emission current was dominant for the gates with ITO/Ni/Au electrode. The larger temperature dependence was caused that ITO/AlGaN interface states were smaller than those for Ni/Au electrode. It was suggested that suppressed AlGaN Schottky barrier thinning was caused by the surface defect donors, then tunneling leakage currents were decreased. We evaluated HEMT characteristics with ITO/Ni/Au electrode and Ni/Au electrode. Id max and Gm max were similar characteristics, but Vth with ITO/Ni/Au electrode was shifted +0.4 V than that with Ni/Au electrode due to the higher Schottky barrier. It was confirmed to have a good pinch-off currents and low gate leakage currents by ITO/Ni/Au electrodes.

Monolithic gyrators are proposed on the basis of integrating resonant tunneling diodes (RTDs) and HEMT toward realization of broadband and high-Q passives. Feasibility of millimeter-wave active inductors using the gyrator are described with equivalent circuit analysis and numerical calculations assuming InP based RTDs and a HEMT to be integrated.

In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.

This paper reports the new gate and recess structure design of millimeter-wave, high power pHEMTs, which highly improves humidity resistance and reliability. By using tantalum nitride as the refractory gate metal and a silicon nitride layer prepared by a catalytic chemical vapor deposition technique for passivation of this transistor, strong moisture resistance was obtained without degradation of the device characteristics. Moreover, we have designed a stepped recess structure to increase the on-state breakdown voltage without degradation of the power density of the millimeter-wave pHEMT, according to the analysis based on the new nonlinear drain resistance model. Consequently, the developed pHEMT has shown strong humidity resistance with no degradation of the DC characteristics even after 1000 hours storage at 400 K and 85% humidity, and the high on-state breakdown voltage of over 30 V while keeping the high power density of 0.65 W/mm in the Ka band. In addition, the proposed nonlinear drain resistance model effectively explains this power performance.

HEMT comparators for ultrahigh-speed A/D converters have been investigated. In particular, the transition times of the D-latch used in the comparator have been analyzed by assuming a 0.1-µm HEMT technology. It is found that for small input signals (<0.1 V), the transition time from the track to latch phase dominates the comparator operation speed. As the input signal increases, this time decreases due to the positive feedback in the latch, and the comparator speed is limited by the transition time from the latch to track phase. The transition times of 20 ps have been estimated for the present comparator.

The author developed a GaAs wideband IQ modulator IC, which is utilized in RF signal source instruments with direct-conversion architecture. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift of EVM (Error Vector Magnitude) is greater in some frequency and temperature ranges than the first generation IC of the same architecture. For applications requiring the precision of electric instrumentation, temperature drift is highly critical. This paper clarifies that linear phase error is the dominant factor causing the temperature drift. It also identifies that such temperature drift of linear phase error is due to equivalent series impedance, especially parasitic capacitance of the phase shifter. This effect is verified by comparing the SSB measurements to a mathematical simulation using an empirical temperature-dependent small-signal FET model.

We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.

As a review of the InP HEMT technology and its applications to logic ICs, the two-step-recess gate structure, which is now widely used in high-performance InP HEMTs, and its application to optoelectronic ICs are described. This paper also covers the topic of the gate delay analysis that reveals that the parasitic delay becomes the primary cause of the gate delay in sub-100-nm gate regime. For future challenge for logic applications, ways to reduce the off-state transistor current is also discussed.

Capless high electron mobility transistors (HEMTs) were fabricated and their DC and RF performances were characterized. Capless HEMTs did not have highly doped InGaAs cap layer so that gate recess process was not required in the fabrication of capless HEMTs. The electrical performances of the capless HEMTs were compared with those of conventional HEMTs with highly doped InGaAs cap layer. A typical 0.2 µm capless HEMT exhibited a maximum transconductance of 805 mS/mm, a threshold voltage of -0.5 V, and a unity current gain cut-off frequency (fT) of 137 GHz. Capless HEMTs exhibited improved device uniformity compared with conventional HEMTs fabricated by wet gate recess technology.

In AlGaN/GaN high electron mobility transistors (HEMTs), Si3N4 passivation film brings effective improvements in the current collapse phenomenon, however, the suppression of this phenomenon in a high voltage operation can not be achieved in only the Si3N4 deposition process. In order to solve this problem, we have demonstrated an NH3-plasma surface pretreatment in the chamber of plasma enhanced chemical vapor deposition (PE-CVD) just before Si3N4 deposition process. We found that the optimized NH3-plasma pretreatment could improve the current collapse as compared with only the Si3N4 deposition and an excessive pretreatment made it worse adversely in AlGaN/GaN-HEMTs. It was confirmed by Auger electron spectroscopy (AES) analysis that the optimized NH3-plasma pretreatment decreased the carbon contamination such as hydrocarbon on the AlGaN surface and the excessive pretreatment degraded the stoicheiometric composition of AlGaN surface.

An HEMT CCD (charge-coupled-device) matched filter for spread-spectrum communication was developed. For higher data rates, it was fabricated using a two-phase CCD based on HEMT technology. It operates at 1.6 GHz, and its calculated data rate is 100 Mbps with a PN data length of 16 bits (PN data rate is 1.6 GHz). And it attains a charge transfer efficiency (CTE) of 0.975 at 2 GHz. The HEMT CCD matched filter dissipates 173 mW from a 10-Vp-p supply, and its chip size is 0.961.03 mm. It will thus be useful for optical communication and other high-data-rate applications utilizing spread-spectrum (SS) communication.

Phase pure cubic (c-) GaN/AlGaN heterostructures on 3C-SiC free standing (001) substrates have successfully been developed. Almost complete (100%) phase pure c-GaN films are achieved with 2-nm surface roughness on 3C-SiC substrate and stoichiometric growth conditions. The polarization effect in c-GaN/AlGaN has been evaluated, based on measuring the transition energy of GaN/AlGaN quantum wells (QWs). It is demonstrated that the polarization electric fields are negligible small in c-GaN/AlGaN/3C-SiC compared with those of hexagonal (h-)GaN/AlGaN, 710 kV/cm for Al content x of 0.15, and 1.4 MV/cm for x of 0.25. A sheet carrier concentration of c-GaN/AlGaN heterojunction interface is estimated to 1.61012 cm-2, one order of magnitude smaller than that of h-GaN/AlGaN. The band diagrams of c-GaN/AlGaN HEMTs have been simulated to demonstrate the normally-off mode operation. The blocking voltage capability of GaN films was demonstrated with C-V measurement of Schottky diode test vehicle, and extrapolated higher than 600 V in c-GaN films at a doping level below 51015 cm-3, to show the possibility for high power electronics applications.

A novel fabrication technology for lateral scale-down of sub-100-nm-gate InP-based HEMTs is presented. The fabricated device, whose structure features a reduced distance between the gate and ohmic metals of less than 100 nm, exhibits low ohmic resistances and improved DC and RF characteristics with good uniformity across a wafer. A fabricated 130-nm-gate lattice-matched InAlAs/InGaAs HEMT exhibits an extrinsic transconductance of 1.3 S/mm. This is 25% increase compared to that of a HEMT fabricated with our conventional process, which is explained by the reduction of RS. The average current-gain-cutoff-frequency (fT) of 261 GHz was obtained with a small deviation of 9.0 GHz. Uniform characteristics with high yield were also confirmed for HEMTs with shorter gates. The average fT of 290 GHz with a standard deviation of 9.3 GHz was obtained for 55-nm-gate HEMTs. The developed fabrication technology is promising for improving the electrical characteristics of sub-100-nm-gate InP-based HEMTs and for their integration.

Submillimeter-wave space applications require special components for power generation, detection and multiplication. This article presents recent progress in three various solid-state device technologies for submillimeter-wave space instruments: the InP HEMT for ultra-low noise detection at very low power in the IF amplifier, the heterostructure barrier varactor in the frequency multiplier, and the superconducting hot electron bolometer mixer for quantum-limited heterodyne detection above 700 GHz.

We performed numerical analyses on structure sensitive field emission properties of our proposing plasmon resonant photomixer (PRX) in the terahertz range. The photomixer incorporates doubly interdigitated grating strips for gate electrodes and a vertical resonator structure for realizing highly efficient terahertz emission even at room temperature. We investigated the dependence of total field emission properties of PRX's on their material and dimension parameters. Introduction of low-conductive gate electrodes and ac-coupled 2D periodic plasmon gratings with depleted connecting portions are effective for expanding its lower cutoff frequency. The cutoff frequency, which is around 1.0 THz in standard metal-gates configuration, is expanded to less than 500 GHz. The output intensity could also be amplified more than double. On the other hand, a shorter vertical cavity is effective for expanding its upper cutoff frequency, which is expanded close to vertical resonant frequency, while maintaining the lower cutoff frequency. The combination of these design rules can realize much broader bandwidth operation.

Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.

Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is considered as a possible cause for limitation of frequency of operation of GaN-based high-electron-mobility transistors (HEMTs). The experimental data on noise temperature of hot electrons at a microwave frequency as a function of supplied electric power is used to extract information on hot phonons: the hot-phonon lifetime, the equivalent hot-phonon temperature, the effective occupancy of hot-phonon states involved into electron-LO-phonon interaction. The possible ways for controlling the hot-phonon effect on electron drift velocity through variation of electron density, channel composition, and hot-phonon lifetime are discussed. The expected dependence of hot-electron drift velocity on hot-phonon lifetime is confirmed experimentally. A self-consistent explanation of different frequency behaviour of InP-based and GaN-based HEMTs is obtained from a comparative study of hot-phonon effects.